Method of manufacturing capacitor
    1.
    发明授权
    Method of manufacturing capacitor 有权
    制造电容器的方法

    公开(公告)号:US08085523B2

    公开(公告)日:2011-12-27

    申请号:US12635838

    申请日:2009-12-11

    IPC分类号: H01G4/06

    摘要: One capacitor fabrication process including metal layer forming a metal layer on one surface of a substrate, dielectric layer forming a dielectric layer on the metal layer, metal foil forming a metal foil on the dielectric layer, separating the noble metal layer from the dielectric layer, and electrode layer forming an electrode layer on the second surface of the dielectric layer, wherein the second surface faces away from the first surface of the dielectric layer with the metal foil. Another capacitor fabrication process includes separation layer forming a separation layer on one surface of a substrate, dielectric layer forming a dielectric layer on the separation layer, metal foil forming a metal foil the dielectric layer, separating the substrate from the separation layer, and an electrode layer forming an electrode layer on the second surface of the dielectric layer, wherein the second surface faces away from the first surface of said dielectric layer with the metal foil. A thin-film capacitor has higher capacity, is so slimmed down and has a form well fit for being buried in a base board, and can be used even at high frequencies.

    摘要翻译: 一种电容器制造方法,包括在基板的一个表面上形成金属层的金属层,在金属层上形成电介质层的介电层,在介电层上形成金属箔的金属箔,将贵金属层与电介质层分离, 以及在所述电介质层的第二表面上形成电极层的电极层,其中所述第二表面与所述金属箔相离离所述电介质层的所述第一表面。 另一种电容器制造方法包括在基板的一个表面上形成分离层的分离层,在分离层上形成电介质层的介电层,形成介电层的金属箔,从分离层分离基板的金属箔和电极 在所述电介质层的第二表面上形成电极层,其中所述第二表面用所述金属箔离开所述电介质层的所述第一表面。 薄膜电容器具有更高的容量,如此薄型化,并且具有很好地埋入基板中的形状,并且甚至可以在高频下使用。

    Method of manufacturing capacitor
    2.
    发明授权
    Method of manufacturing capacitor 有权
    制造电容器的方法

    公开(公告)号:US07773364B2

    公开(公告)日:2010-08-10

    申请号:US11779597

    申请日:2007-07-18

    IPC分类号: H01G4/06

    摘要: One capacitor fabrication process including metal layer forming a metal layer on one surface of a substrate, dielectric layer forming a dielectric layer on the metal layer, metal foil forming a metal foil on the dielectric layer, separating the noble metal layer from the dielectric layer, and electrode layer forming an electrode layer on the second surface of the dielectric layer, wherein the second surface faces away from the first surface of the dielectric layer with the metal foil. Another capacitor fabrication process includes separation layer forming a separation layer on one surface of a substrate, dielectric layer forming a dielectric layer on the separation layer, metal foil forming a metal foil the dielectric layer, separating the substrate from the separation layer, and an electrode layer forming an electrode layer on the second surface of the dielectric layer, wherein the second surface faces away from the first surface of said dielectric layer with the metal foil. A thin-film capacitor has higher capacity, is so slimmed down and has a form well fit for being buried in a base board, and can be used even at high frequencies.

    摘要翻译: 一种电容器制造方法,包括在基板的一个表面上形成金属层的金属层,在金属层上形成电介质层的介电层,在介电层上形成金属箔的金属箔,将贵金属层与电介质层分离, 以及在所述电介质层的第二表面上形成电极层的电极层,其中所述第二表面与所述金属箔相离离所述电介质层的所述第一表面。 另一种电容器制造方法包括在基板的一个表面上形成分离层的分离层,在分离层上形成电介质层的介电层,形成介电层的金属箔,从分离层分离基板的金属箔和电极 在所述电介质层的第二表面上形成电极层,其中所述第二表面用所述金属箔离开所述电介质层的所述第一表面。 薄膜电容器具有更高的容量,如此薄型化,并且具有很好地埋入基板中的形状,并且甚至可以在高频下使用。

    Absorption type refrigerating apparatus
    4.
    发明授权
    Absorption type refrigerating apparatus 失效
    吸收式制冷装置

    公开(公告)号:US5799502A

    公开(公告)日:1998-09-01

    申请号:US688711

    申请日:1996-07-31

    IPC分类号: F25B15/02 F25B29/00 F25B37/00

    摘要: An absorption type refrigerating apparatus which has a high performance coefficient as an entire apparatus by improving the cooling capacities of the condensation function portion and the absorption function portion and can be reduced in size is constituted such that the cooling function portion 1 for cooling the absorption function portion (absorber) 1 by means of the first heat operation fluid (cooling water) 35a is divided into a plurality of sub-portions such as the cooling pipe 201A, cooling pipe 201H and absorption/heat exchanger 234, the flow passages of the first heat operation fluid 35a are connected to these cooling function sub-portions 201A, 201H and 234 in parallel/series like a route formed by the pipe lines 20, 20A, 20D and 21 and a route formed by the pipe lines 20, 20B, 20C and 21, and the cooling capacity of the cooling pipe 201H is increased by forming a continuous irregular surface 1C on the inner wall of the outer shell 1A of the absorber 1. The above apparatus may be modified such that the cooling pipe 201H is provided inside the absorber 1 and a cooling pipe is replaced for the absorption/heat exchanger 234 and installed inside the absorber 1.

    摘要翻译: 通过改善冷凝功能部分和吸收功能部分的冷却能力并可以减小尺寸的具有作为整个装置的整个装置的高性能系数的吸收式制冷装置被构成为使得用于冷却吸收功能的冷却功能部分1 通过第一热作用流体(冷却水)35a的部分(吸收体)1被分成多个子部分,例如冷却管201A,冷却管201H和吸收/热交换器234,第一 热作业流体35a与管路20,20A,20D,21D所形成的路径并行/串联连接到这些冷却功能子部201A,201H,234以及由管路20,20B,20C形成的路径 并且冷却管201H的冷却能力通过在吸收器1的外壳1A的内壁上形成连续的不规则表面1C来增加。上述装置可以 将冷却管201H设置在吸收体1的内部,冷却管更换为吸收/热交换器234并安装在吸收体1的内部。

    ACTIVE MATERIAL, ELECTRODE CONTAINING THE ACTIVE MATERIAL, LITHIUM SECONDARY BATTERY INCLUDING THE ELECTRODE, AND METHOD FOR MAKING ACTIVE MATERIAL
    7.
    发明申请
    ACTIVE MATERIAL, ELECTRODE CONTAINING THE ACTIVE MATERIAL, LITHIUM SECONDARY BATTERY INCLUDING THE ELECTRODE, AND METHOD FOR MAKING ACTIVE MATERIAL 有权
    活性材料,包含活性材料的电极,包括电极的锂二次电池,以及制备活性材料的方法

    公开(公告)号:US20130130106A1

    公开(公告)日:2013-05-23

    申请号:US13810464

    申请日:2011-07-12

    IPC分类号: H01M4/131 H01M4/04

    摘要: To provide an active material from which a sufficient discharge capacity is obtained, an electrode containing the active material, a lithium secondary battery including the electrode, and a method for making an active material. A method for making an active material includes a temperature elevation step of heating a mixture containing a lithium source, a pentavalent vanadium source, a phosphoric acid source, water, and a reductant in a hermetically sealed container at a temperature elevation rate T1 from 25° C. to 110° C. and then at a temperature elevation rate T2 from 110° C. to a designated temperature of 200° C. or more, in which T1>T2; T1=0.5 to 10° C./min; and T2=0.1 to 2.2° C./min.

    摘要翻译: 为了提供从其获得足够的放电容量的活性材料,含有活性材料的电极,包括该电极的锂二次电池以及制造活性材料的方法。 制造活性物质的方法包括:将加热含有锂源,五价钒源,磷酸源,水和还原剂的混合物的温度升高步骤以25℃的升温速度T1在密闭容器中加热 然后在升温速度T2从110℃到200℃或更高的指定温度,其中T1> T2; T1 = 0.5〜10℃/ min; T2 = 0.1〜2.2℃/ min。