公开(公告)号：US08092277B2

公开(公告)日：2012-01-10

申请号：US12470714

申请日：2009-05-22

申请人： Tomohiro Hashii ,  Yasunori Yamada ,  Yuichi Kakizono

发明人： Tomohiro Hashii ,  Yasunori Yamada ,  Yuichi Kakizono

IPC分类号： B24B1/00 ,  B24B7/17

CPC分类号： B24B37/042 ,  B24B7/17 ,  B24B7/228 ,  B24B37/08 ,  B24B41/067 ,  B24B47/12 ,  B24D7/14

摘要： A method of grinding semiconductor wafers including simultaneously grinding both surfaces of multiple semiconductor wafers by rotating the wafers between a pair of upper and lower rotating surface plates in a state where the wafers are held on a carrier so that centers of the wafers are positioned on a circumference of a single circle, wherein a ratio of an area of a circle passing through the centers of the wafers to an area of one of the wafers is greater than or equal to 1.33 but less than 2.0; surfaces of the fixed abrasive grains comprised in the surface plates are comprised of pellets disposed in a grid-like fashion, with the pellets provided in a center portion and pellets provided in a peripheral portion being larger in size than the pellets provided in an intermediate portion.

摘要翻译： 一种研磨半导体晶片的方法，包括在晶片被保持在载体上的状态下，通过在一对上下旋转表面板之间旋转晶片同时研磨多个半导体晶片的两个表面，使得晶片的中心位于 圆周，其中通过晶片中心的圆的面积与一个晶片的面积的比率大于或等于1.33但小于2.0; 包含在表面板中的固定磨料颗粒的表面由网格状排列的颗粒组成，颗粒设置在中心部分，并且设置在周边部分中的颗粒的尺寸大于设置在中间部分中的颗粒 。

公开(公告)号：US20060169667A1

公开(公告)日：2006-08-03

申请号：US11345009

申请日：2006-01-31

申请人： Sakae Koyata ,  Yuichi Kakizono ,  Tomohiro Hashii ,  Katsuhiko Murayama

发明人： Sakae Koyata ,  Yuichi Kakizono ,  Tomohiro Hashii ,  Katsuhiko Murayama

IPC分类号： B44C1/22 ,  H01L21/461 ,  C09K13/00 ,  C23F1/00

CPC分类号： H01L21/02008 ,  C30B33/10

摘要： A method for manufacturing a silicon wafer includes a planarizing process 13 for polishing or lapping the upperside and lowerside surfaces of a thin disk-shaped silicon wafer obtained by slicing a silicon single crystal ingot, an etching process for dipping the silicon wafer into the etching liquid wherein silica powder is dispersed uniformly in an alkali aqueous solution, thereby etching the upperside and lowerside surfaces of the silicon wafer, and a both-side simultaneous polishing process 16 for polishing the upperside and lowerside surfaces of the etched silicon wafer simultaneously or a one-side polishing process for polishing the upperside and lowerside surfaces of the etched silicon wafer one after another, in this order.

摘要翻译： 一种硅晶片的制造方法，其特征在于，包括：通过对硅单晶锭进行切片而得到的薄盘状硅晶片的上下表面进行抛光或研磨的平坦化工序13，将硅晶片浸入蚀刻液中的蚀刻工序 其中二氧化硅粉末均匀地分散在碱性水溶液中，从而蚀刻硅晶片的上侧和下侧表面，以及用于同时抛光被蚀刻的硅晶片的上侧和下侧表面的双面同时抛光工艺16， 按照此顺序一次一个地抛光蚀刻的硅晶片的上侧和下侧表面的侧面抛光工艺。

公开(公告)号：US09017145B2

公开(公告)日：2015-04-28

申请号：US13083833

申请日：2011-04-11

申请人： Yoshiaki Kurosawa ,  Tomohiro Hashii ,  Yuichi Kakizono

发明人： Yoshiaki Kurosawa ,  Tomohiro Hashii ,  Yuichi Kakizono

IPC分类号： B24B57/00 ,  B24B29/02 ,  B24B37/08 ,  B24B57/02

CPC分类号： B24B37/08 ,  B24B57/02

摘要： The present invention provides a polishing solution distribution apparatus capable of reducing distribution deviation of polishing solution even when leveling for installation is insufficient or inclination of an installation location varies and a polishing apparatus having the same. The polishing solution distribution apparatus includes a cone-shaped branch body in which a solution pan to store supplied polishing solution is formed and in which plural flow passages radially connected to a side face of the solution pan respectively and having a delivery port to supply polishing solution to a position lower than the connected position are formed, a support portion to support the branch body, and a universal joint mechanism to support the branch body via the support portion at a position being higher than the gravity center of the branch body.

摘要翻译： 本发明提供一种能够减少抛光液的分布偏差的抛光液分配装置，即使在安装调平不足或安装位置的倾斜变化的情况下，也能够减少研磨液的分布偏差。 抛光液分配装置包括锥形分支体，其中形成有用于存储供应的抛光溶液的溶液盘，并且其中分别径向地连接到溶液盘的侧面并具有输送口以提供抛光溶液的多个流动通道 形成到比连接位置低的位置，支撑分支体的支撑部和万向接头机构，用于在比分支体的重心高的位置经由支撑部支撑分支体。

公开(公告)号：US20090311863A1

公开(公告)日：2009-12-17

申请号：US12475876

申请日：2009-06-01

申请人： Tomohiro Hashii ,  Yuichi Kakizono

发明人： Tomohiro Hashii ,  Yuichi Kakizono

IPC分类号： H01L21/306 ,  H01L21/304 ,  B24B1/00

CPC分类号： H01L21/02008 ,  B24B7/17 ,  B24B7/228

摘要： A semiconductor wafer is produced by a method comprising a slicing step of cutting out a thin disc-shaped semiconductor wafer from a crystalline ingot; a fixed grain bonded abrasive grinding step of sandwiching the semiconductor wafer between a pair of upper and lower plates each having a pad of fixed grain bonded abrasive to simultaneously grind both surfaces of the semiconductor wafer; and a one-side polishing step subjected to both surfaces of the semiconductor wafer after the fixed grain bonded abrasive grinding step.

摘要翻译： 一种半导体晶片是通过包括切割步骤的方法制造的，该切片步骤从晶体锭切出薄的盘状半导体晶片; 将半导体晶片夹在一对上板和下板之间的固定颗粒粘结研磨步骤，每个上板和下板均具有固定颗粒粘结磨料垫，以同时研磨半导体晶片的两个表面; 以及在固定晶粒结合磨料研磨步骤之后经受半导体晶片的两个表面的单面抛光步骤。

公开(公告)号：US09550264B2

公开(公告)日：2017-01-24

申请号：US13322955

申请日：2010-06-04

申请人： Tomohiro Hashii ,  Yuichi Kakizono ,  Yoshiaki Kurosawa

发明人： Tomohiro Hashii ,  Yuichi Kakizono ,  Yoshiaki Kurosawa

IPC分类号： B24B1/00 ,  B24B7/22 ,  B24D7/06 ,  H01L21/02

CPC分类号： B24B7/228 ,  B24B7/17 ,  B24B37/08 ,  B24B37/22 ,  B24B37/245 ,  B24D7/06 ,  H01L21/02013

摘要： Disclosure relates to a fixed abrasive-grain processing device and a method of fixed abrasive-grain processing used for producing a semiconductor wafer, and a method for producing a semiconductor wafer which make the surface of the semiconductor wafer possible to have preferable flatness and which can prevent the number of steps and the installation area of facilities from increasing. The producing of semiconductor wafers uses a fixed abrasive-grain processing device including a lower fixed abrasive-grain layer that is adjacent to the top surface of the lower surface-plate and that grinds the top surfaces of the plurality of semiconductor wafers; an upper fixed abrasive-grain layer that is adjacent to the bottom surface of the upper surface-plate and that grinds the bottom surfaces of the plurality of semiconductor wafers; a carrier plate that is horizontally interposed between the lower surface-plate and the upper surface-plate and that includes a plurality of holes each accommodating one of the plurality of semiconductor wafers; and a carrier rotating device that circularly moves the carrier plate, wherein the lower fixed abrasive-grain layer and the upper fixed abrasive-grain layer include fixed abrasive grain having a diameter of 4 μm or less and being dispersed and fixed in elastic members.

摘要翻译： 公开涉及固定磨粒加工装置和用于制造半导体晶片的固定磨粒加工方法，以及制造半导体晶片的方法，其使得半导体晶片的表面可以具有优选的平坦度，并且可以 防止设施的数量和安装面积的增加。 半导体晶片的制造使用固定的磨粒处理装置，其包括与下表面板的顶表面相邻的下固定磨粒层，并且研磨多个半导体晶片的顶表面; 上固定磨粒层，其与所述上表面板的底表面相邻并且研磨所述多个半导体晶片的底表面; 水平插入在所述下表面板和所述上表面板之间并且包括多个孔的承载板，每个孔容纳所述多个半导体晶片中的一个; 以及使所述载板圆周地移动的载体旋转装置，其中，所述下固定磨粒层和所述上固定磨粒层包括直径为4μm以下的固定磨粒，并分散固定在弹性部件中。

公开(公告)号：US20120315739A1

公开(公告)日：2012-12-13

申请号：US13581011

申请日：2011-02-16

申请人： Tomohiro Hashii ,  Yuichi Kakizono ,  Yoshiaki Kurosawa

发明人： Tomohiro Hashii ,  Yuichi Kakizono ,  Yoshiaki Kurosawa

IPC分类号： H01L21/78

CPC分类号： B24B37/042 ,  B24B9/065 ,  B24B27/0633 ,  B24B37/08 ,  B24B37/245 ,  B28D5/0076 ,  H01L21/02008 ,  H01L21/02013 ,  H01L21/02021 ,  H01L21/02024

摘要： All treatments performed in machining processes other than a polishing process are performed while pure water free from free abrasive grains is supplied. Thus, an amount of abrasive grains included in a used processing liquid discharged in each process is reduced and semiconductor scraps are collected from the used slurry for recycling.

摘要翻译： 在进行抛光处理以外的加工工序中进行的所有处理都是在不含有游离磨粒的纯水的情况下进行的。 因此，减少了在各工序中排出的使用过的处理液中所含的磨粒的量，并将二氧化硅废料从废浆中回收再循环。

公开(公告)号：US20090311948A1

公开(公告)日：2009-12-17

申请号：US12475855

申请日：2009-06-01

申请人： Tomohiro Hashii ,  Yuichi Kakizono

发明人： Tomohiro Hashii ,  Yuichi Kakizono

IPC分类号： B24B7/26 ,  B28D1/02 ,  B24B9/06

CPC分类号： B28D5/0005 ,  B24B7/17 ,  B24B7/228

摘要： A semiconductor wafer is produced by a method comprising a slicing step, a fixed grain bonded abrasive grinding step and a beveling step, in which the kerf loss is reduced and the flatness is improved.

摘要翻译： 通过包括切割步骤，固定晶粒结合磨料磨削步骤和斜切步骤的方法制造半导体晶片，其中切口损失减小并且平坦度得到改善。

公开(公告)号：US20090311949A1

公开(公告)日：2009-12-17

申请号：US12475807

申请日：2009-06-01

申请人： Tomohiro Hashii ,  Yuichi Kakizono

发明人： Tomohiro Hashii ,  Yuichi Kakizono

IPC分类号： B24B1/00

CPC分类号： B24B7/228 ,  B24B7/17 ,  B24B37/08 ,  H01L21/02008

摘要： A semiconductor wafer is produced by a method comprising a slicing step of cutting out a thin disc-shaped semiconductor wafer from a crystalline ingot; and a fixed grain bonded abrasive grinding step of sandwiching the semiconductor wafer between a pair of upper and lower plates each having a pad of fixed grain bonded abrasive to simultaneously grind both surfaces of the semiconductor wafer.

摘要翻译： 一种半导体晶片是通过包括切割步骤的方法制造的，该切片步骤从晶体锭切出薄的盘状半导体晶片; 以及将半导体晶片夹在一对上板和下板之间的固定晶粒结合磨料研磨步骤，每个上板和下板均具有固定颗粒粘结磨料垫，以同时研磨半导体晶片的两个表面。

公开(公告)号：US20120071064A1

公开(公告)日：2012-03-22

申请号：US13322955

申请日：2010-06-04

申请人： Tomohiro Hashii ,  Yuichi Kakizono ,  Yoshiaki Kurosawa

发明人： Tomohiro Hashii ,  Yuichi Kakizono ,  Yoshiaki Kurosawa

IPC分类号： B24B1/00

CPC分类号： B24B7/228 ,  B24B7/17 ,  B24B37/08 ,  B24B37/22 ,  B24B37/245 ,  B24D7/06 ,  H01L21/02013

摘要： Disclosure relates to a fixed abrasive-grain processing device and a method of fixed abrasive-grain processing used for producing a semiconductor wafer, and a method for producing a semiconductor wafer which make the surface of the semiconductor wafer possible to have preferable flatness and which can prevent the number of steps and the installation area of facilities from increasing. The producing of semiconductor wafers uses a fixed abrasive-grain processing device including a lower fixed abrasive-grain layer that is adjacent to the top surface of the lower surface-plate and that grinds the top surfaces of the plurality of semiconductor wafers; an upper fixed abrasive-grain layer that is adjacent to the bottom surface of the upper surface-plate and that grinds the bottom surfaces of the plurality of semiconductor wafers; a carrier plate that is horizontally interposed between the lower surface-plate and the upper surface-plate and that includes a plurality of holes each accommodating one of the plurality of semiconductor wafers; and a carrier rotating device that circularly moves the carrier plate, wherein the lower fixed abrasive-grain layer and the upper fixed abrasive-grain layer include fixed abrasive grain having a diameter of 4 μm or less and being dispersed and fixed in elastic members.

摘要翻译： 公开涉及一种固定磨粒加工装置和用于制造半导体晶片的固定磨粒加工方法，以及制造半导体晶片的方法，其可使半导体晶片的表面具有优选的平坦度，并且可以 防止设施的数量和安装面积的增加。 半导体晶片的制造使用固定的磨粒处理装置，其包括与下表面板的顶表面相邻的下固定磨粒层，并且研磨多个半导体晶片的顶表面; 上固定磨粒层，其与所述上表面板的底表面相邻并且研磨所述多个半导体晶片的底表面; 水平插入在所述下表面板和所述上表面板之间并且包括多个孔的承载板，每个孔容纳所述多个半导体晶片中的一个; 以及使所述载板圆周地移动的载体旋转装置，其中，所述下固定磨粒层和所述上固定磨粒层包括直径为4μm以下的固定磨粒，并分散固定在弹性部件中。

公开(公告)号：US20090311808A1

公开(公告)日：2009-12-17

申请号：US12475816

申请日：2009-06-01

申请人： Tomohiro Hashii ,  Yuichi Kakizono

发明人： Tomohiro Hashii ,  Yuichi Kakizono

IPC分类号： H01L21/66 ,  H01L21/306

CPC分类号： H01L21/02008 ,  Y02P80/30

摘要： A semiconductor wafer is produced by a method comprising a slicing step, an one-side polishing step and a chemical treating step, in which the kerf loss is reduced and the flatness is improved.

摘要翻译： 通过包括切割步骤，单面研磨步骤和化学处理步骤的方法制造半导体晶片，其中切口损失减小并且平坦度得到改善。