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1.发明授权Process for chemical mechanical polishing of semiconductor substrate and aqueous dispersion for chemical mechanical polishing 有权用于化学机械抛光的半导体衬底的化学机械抛光和水性分散体的方法公开(公告)号：US07183211B2
公开(公告)日：2007-02-27
申请号：US10349092
申请日：2003-01-23
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： C09G1/02 , H01L21/3212
摘要： The object of the present invention is to provide a process for chemical mechanical polishing of semiconductor substrate that is particularly useful for chemical mechanical polishing a wafer having a wiring pattern and an insulating layer having a low dielectric constant is formed between wiring patterns, interlayers in the case of a multi-layer wiring and the like in the process of producing a semiconductor device, and an aqueous dispersion for chemical mechanical polishing which is used in this process. The process for chemical mechanical polishing of a semiconductor substrate of the present invention is that a surface to be polished of the semiconductor substrate is polished under conditions of a rotation speed of a polishing table fixing a polishing pad at the range from 50 to 200 rpm and a pressing pressure of the semiconductor substrate fixed to a polishing head against a polishing pad at the range from 700 to 18,000 Pa, by using an aqueous dispersion for chemical mechanical polishing comprising an abrasive and at least one compound selected from the group consisting of polycarboxylic acid having a heterocycle and anhydride thereof, and the polishing pad.
摘要翻译： 本发明的目的是提供一种半导体衬底的化学机械抛光方法，该方法特别适用于化学机械抛光，具有布线图案的晶片和具有低介电常数的绝缘层形成在布线图案，中间层 在制造半导体器件的过程中的多层布线等的情况以及用于该工艺的化学机械抛光用水性分散体。 本发明的半导体基板的化学机械研磨方法是在将抛光垫固定在50〜200rpm的范围内的研磨台的旋转速度的条件下对半导体基板的被研磨面进行研磨， 通过使用包含研磨剂和至少一种选自多元羧酸的化合物的化合物机械抛光用水性分散体，将固定在研磨头上的研磨头的半导体衬底的压力压在700至18,000Pa的范围内 具有杂环和酸酐，以及抛光垫。
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公开(公告)号：US06832949B2
公开(公告)日：2004-12-21
申请号：US10279843
申请日：2002-10-25
IPC分类号： B24B500
CPC分类号： B24B37/205
摘要： An object of the present invention is to provide a window member for chemical mechanical polishing, which is excellent in antifouling property and transparency and is excellent in anti-scratching and, further, can easily perform detection of a polishing endpoint of the surface of a semiconductor wafer by passing a light for endpoint detection, in polishing of a semiconductor wafer using an optical endpoint detecting apparatus and also to a polishing pad. A window member for chemical mechanical polishing of the present invention is provided with a substrate part (comprised of polyurethane resin and the like), which is transparent partly at least, an antifouling resin layer formed on at least one side of the substrate part. This antifouling resin layer is preferably comprised of a fluorine-based polymer having a polysiloxane segment in a main chain. A polishing pad may be the one that a window member is fitted in a through hole of a substrate for a polishing pad (comprised of polyurethane resin and the like, disc-like, belt-like or the like) provided with a through hole penetrating from surface to back, or adhered to a substrate for a polishing pad so as to cover an opening part of the through hole.
摘要翻译： 本发明的目的是提供一种化学机械抛光用的窗构件，其防污性和透明性优异，抗划伤性优异，并且还可以容易地进行半导体表面的研磨终点的检测 使用光学终点检测装置对抛光用的半导体晶片进行端点检测的光，也可以使用抛光垫。 本发明的化学机械抛光用窗构件具有至少部分透明地形成在基板部的至少一侧上的防污树脂层的基板部（由聚氨酯树脂等构成）。 该防污树脂层优选由在主链中具有聚硅氧烷链段的氟系聚合物构成。 抛光垫可以是窗构件装配在用于抛光垫（由聚氨酯树脂等构成的盘状，带状等）的通孔的通孔中，该基板设置有贯通孔 或者粘附到用于抛光垫的基板上，以覆盖通孔的开口部分。
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3.发明申请CHEMICAL MECHANICAL POLISHING AGENT KIT AND CHEMICAL MECHANICAL POLISHING METHOD USING THE SAME 审中-公开化学机械抛光剂套件及其化学机械抛光方法公开(公告)号：US20080274620A1
公开(公告)日：2008-11-06
申请号：US12164320
申请日：2008-06-30
IPC分类号： H01L21/302
CPC分类号： C09G1/02 , H01L21/3212
摘要： A chemical mechanical polishing method of the present invention comprises conducting polishing by the use of a chemical mechanical polishing aqueous dispersion (A) containing abrasive grains and then conducting polishing by the use of a chemical mechanical polishing aqueous composition (B) containing at least one organic compound having a heterocyclic ring in addition to the chemical mechanical polishing aqueous dispersion (A). Also A chemical mechanical polishing agent kit of the present invention comprises the chemical mechanical polishing aqueous dispersion (A) and the chemical mechanical polishing aqueous composition (B). The polishing method and the polishing agent kit can prevent an increase of dishing and corrosion of wiring portion to enhance the yield.
摘要翻译： 本发明的化学机械抛光方法包括通过使用含有磨粒的化学机械抛光水分散体（A）进行抛光，然后通过使用含有至少一种有机物的化学机械抛光含水组合物（B）进行抛光 除了化学机械研磨水分散体（A）之外还具有杂环的化合物。 本发明的化学机械研磨剂试剂盒也包括化学机械研磨用水分散体（A）和化学机械研磨用水性组合物（B）。 抛光方法和抛光剂套件可以防止布线部分的凹陷和腐蚀增加以提高产量。
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4.发明申请Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method 有权化学机械抛光水性分散体和化学机械抛光方法公开(公告)号：US20050227451A1
公开(公告)日：2005-10-13
申请号：US11102639
申请日：2005-04-11
CPC分类号： C09G1/02 , C09K3/1463 , H01L21/31053 , H01L21/3212 , H01L21/76819
摘要： Disclosed is a chemical mechanical polishing aqueous dispersion comprising (A1) first fumed silica having a specific surface area of not less than 10 m2/g and less than 160 m2/g and an average secondary particle diameter of not less than 170 nm and not more than 250 nm and (A2) second fumed silica having a specific surface area of not less than 160 m2/g and an average secondary particle diameter of not less than 50 nm and less than 170 nm. Also disclosed is a chemical mechanical polishing method using the chemical mechanical polishing aqueous dispersion. According to the chemical mechanical polishing aqueous dispersion and the chemical mechanical polishing method, a chemical mechanical polishing process wherein a barrier metal layer and a cap layer can be efficiently removed by polishing and damage to an insulating film material of a low dielectric constant present in the underlying layer is reduced can be carried out.
摘要翻译： 公开了一种化学机械抛光水分散体，其包含（A1）比表面积不小于10m 2 / g且小于160m 2 / g的第一热解法二氧化硅， g，平均二次粒径为170nm以上250nm以下，（A2）比表面积为160m 2 / g以上的第二热解法二氧化硅，平均 二次粒径不小于50nm且小于170nm。 还公开了使用化学机械研磨水分散体的化学机械研磨方法。 根据化学机械抛光水分散体和化学机械抛光方法，化学机械抛光方法可以通过抛光和损坏存在于介质中的低介电常数的绝缘薄膜材料来有效地去除阻挡金属层和盖层 底层减少可以进行。
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公开(公告)号：US07087530B2
公开(公告)日：2006-08-08
申请号：US10689680
申请日：2003-10-22
IPC分类号： H01L21/302
CPC分类号： C09G1/02 , C09K3/1463 , H01L21/31053
摘要： The invention provides an aqueous dispersion for chemical mechanical polishing that can limit scratches of a specific size to a specific number, even with interlayer insulating films with small elastic moduli (silsesquioxane, fluorine-containing SiO2, polyimide-based resins, and the like.). When using the aqueous dispersion for chemical mechanical polishing of an interlayer insulating film with an elastic modulus of no greater than 20 GPa as measured by the nanoindentation method, the number of scratches with a maximum length of 1 μm or greater is an average of no more than 5 per unit area of 0.01 mm2 of the polishing surface. An aqueous dispersion for CMP or an aqueous dispersion for interlayer insulating film CMP according to another aspect of the invention contains a scratch inhibitor agent and an abrasive. The scratch inhibitor may be biphenol, bipyridyl, 2-vinylpyridine, salicylaldoxime, o-phenylenediamine, catechol, 7-hydroxy-5-methyl-1,3,4-triazaindolizine, and the like. The abrasive may consist of inorganic particles, organic particles or organic/inorganic composite particles. The organic/inorganic composite particles may be formed by polycondensation of an alkoxysilane, aluminum alkoxide, titanium alkoxide, and the like in the presence of polymer particles of polystyrene or the like, and bonding of polysiloxane, and the like, on at least the surface of the polymer particles.
摘要翻译： 本发明提供了一种用于化学机械抛光的水分散体，即使使用具有小弹性模量的层间绝缘膜（倍半硅氧烷，含氟SiO 2，聚酰亚胺 - 基树脂等）。 当通过纳米压痕法测量的弹性模量不大于20GPa的层间绝缘膜的化学机械抛光使用水性分散体时，最大长度为1μm或更大的划痕数是不超过平均值 比抛光表面的0.01mm 2单位面积的5个。 根据本发明另一方面，用于CMP的水分散体或用于层间绝缘膜CMP的水性分散体含有防刮剂和研磨剂。 刮擦抑制剂可以是联苯酚，联吡啶基，2-乙烯基吡啶，水杨醛肟，邻苯二胺，邻苯二酚，7-羟基-5-甲基-1,3,4-三氮杂多卡因等。 研磨剂可以由无机颗粒，有机颗粒或有机/无机复合颗粒组成。 有机/无机复合颗粒可以通过在聚苯乙烯等的聚合物颗粒的存在下的烷氧基硅烷，烷氧基铝，烷氧基钛等的缩聚以及聚硅氧烷等的至少表面 的聚合物颗粒。
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6.发明授权Aqueous dispersion composition for chemical mechanical polishing for use in manufacture of semiconductor devices 有权用于制造半导体器件的化学机械抛光用水性分散体组合物公开(公告)号：US06447695B1
公开(公告)日：2002-09-10
申请号：US09655305
申请日：2000-09-05
IPC分类号： C09K1300
CPC分类号： C09G1/02 , H01L21/3212
摘要： The present invention provides an aqueous dispersion composition for chemical mechanical polishing which is useful for the manufacture of semiconductor devices, and which for polishing of different types of working films and barrier metal layers formed on semiconductor substrates, can achieve efficient polishing particularly of barrier metal surfaces and can give adequately flattened and high precision finished surfaces. The aqueous dispersion composition for chemical mechanical polishing has properties such that, when polishing a copper film, a tantalum layer and/or tantalum nitride layer a and an insulating film under the same conditions, the ratio (RCu/RTa) between the polishing rate of the copper film (RCu) and the polishing rate of the tantalum layer and/or tantalum nitride layer (RTa) is no greater than 1/20, and the ratio (RCu/RIn) between the polishing rate of the copper film (RCu) and the polishing rate of the insulating film (RIn) is from 5 to ⅕. RCu/RTa is preferably no greater than {fraction (1/30)}, especially no greater than {fraction (1/40)} and most preferably no greater than {fraction (1/50)}, while RCu/RIn is preferably 4¼, especially 3⅓ and more preferably 2½.
摘要翻译： 本发明提供了一种用于化学机械抛光的水性分散组合物，其用于制造半导体器件，并且用于抛光形成在半导体衬底上的不同类型的工作膜和阻挡金属层，可以实现特别是阻挡金属表面的高效抛光 并可以给予适当扁平和高精度的成品表面。 用于化学机械抛光的水性分散组合物具有这样的特性，即在相同条件下对铜膜，钽层和/或氮化钽层a和绝缘膜进行研磨时，抛光速率之间的比（RCu / RTa） 铜膜（RCu）和钽层和/或氮化钽层（RTa）的研磨速度不大于1/20，铜膜（RCu）的研磨速度之比（RCu / RIn） 绝缘膜（RIn）的研磨速度为5〜 RCu / R a优选不大于{分数（1/30）}，特别是不大于{分数（1/40）}，最优选不大于{分数（1/50）}，而RCu / RIn优选 4¼，特别是3 1/3，更优选为2½。
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7.发明授权Cleaning composition, method for cleaning semiconductor substrate, and process for manufacturing semiconductor device 有权清洗组合物，半导体基板的清洗方法以及半导体装置的制造方法公开(公告)号：US07498294B2
公开(公告)日：2009-03-03
申请号：US11052910
申请日：2005-02-09
IPC分类号： H01L21/461
CPC分类号： H01L21/02074 , C11D3/3765 , C11D11/0047 , H01L21/3212
摘要： The cleaning composition which comprises organic polymer particles (A) having a crosslinked structure and a surfactant (B) and is used after chemical mechanical polishing. The cleaning method of a semiconductor substrate is a method for cleaning semiconductor substrate given after chemical mechanical polishing, by the use of the cleaning composition. The process for manufacturing a semiconductor device including a step of chemically and mechanically polishing a semiconductor substrate and a step of cleaning the semiconductor substrate obtained after the chemical mechanical polishing, by the cleaning method.
摘要翻译： 该清洁组合物包含具有交联结构的有机聚合物颗粒（A）和表面活性剂（B），并在化学机械抛光后使用。 半导体衬底的清洁方法是通过使用清洁组合物来清洁化学机械抛光后的半导体衬底的清洗方法。 通过清洗方法制造半导体器件的方法，该半导体器件包括化学和机械抛光半导体衬底的步骤以及在化学机械抛光之后获得的半导体衬底的清洁步骤。
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8.发明授权Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method 有权化学机械抛光水性分散体和化学机械抛光方法公开(公告)号：US07378349B2
公开(公告)日：2008-05-27
申请号：US11102639
申请日：2005-04-11
IPC分类号： H01L21/461
CPC分类号： C09G1/02 , C09K3/1463 , H01L21/31053 , H01L21/3212 , H01L21/76819
摘要： Disclosed is a chemical mechanical polishing aqueous dispersion comprising (A1) first fumed silica having a specific surface area of not less than 10 m2/g and less than 160 m2/g and an average secondary particle diameter of not less than 170 nm and not more than 250 nm and (A2) second fumed silica having a specific surface area of not less than 160 m2/g and an average secondary particle diameter of not less than 50 nm and less than 170 nm. Also disclosed is a chemical mechanical polishing method using the chemical mechanical polishing aqueous dispersion. According to the chemical mechanical polishing aqueous dispersion and the chemical mechanical polishing method, a chemical mechanical polishing process wherein a barrier metal layer and a cap layer can be efficiently removed by polishing and damage to an insulating film material of a low dielectric constant present in the underlying layer is reduced can be carried out.
摘要翻译： 公开了一种化学机械抛光水分散体，其包含（A1）比表面积不小于10m 2 / g且小于160m 2 / g的第一热解法二氧化硅， g，平均二次粒径为170nm以上250nm以下，（A2）比表面积为160m 2 / g以上的第二热解法二氧化硅，平均 二次粒径不小于50nm且小于170nm。 还公开了使用化学机械研磨水分散体的化学机械研磨方法。 根据化学机械抛光水分散体和化学机械抛光方法，化学机械抛光方法可以通过抛光和损坏存在于介质中的低介电常数的绝缘薄膜材料来有效地去除阻挡金属层和盖层 底层减少可以进行。
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9.发明申请Chemical mechanical polishing aqueous dispersion, chemical mechanical polishing method, and kit for preparing chemical mechanical polishing aqueous dispersion 审中-公开化学机械抛光水性分散体，化学机械抛光方法和制备化学机械抛光水性分散体的试剂盒公开(公告)号：US20060276041A1
公开(公告)日：2006-12-07
申请号：US11433508
申请日：2006-05-15
IPC分类号： C09K13/00 , H01L21/461 , C03C15/00 , H01L21/302
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1463
摘要： A chemical mechanical polishing aqueous dispersion, including: (A) inorganic particles; (B) at least one type of particles selected from the group consisting of organic particles and organic-inorganic composite particles; (C) at least one compound selected from the group consisting of quinolinecarboxylic acid, quinolinic acid, a divalent organic acid (excluding quinolinic acid), and a hydroxyl acid; (D) at least one compound selected from the group consisting of benzotriazole and benzotriazole derivatives; (E) an oxidizing agent; and (F) water, the chemical mechanical polishing aqueous dispersion containing the component (A) in an amount of 0.05 to 2.0 wt % and the component (B) in an amount of 0.005 to 1.5 wt %, having a ratio (WA/WB) of the amount (WA) of the component (A) to the amount (WB) of the component (B) of 0.1 to 200, and having a pH of 1.0 to 5.0.
摘要翻译： 化学机械抛光水分散体，包括：（A）无机颗粒; （B）选自有机颗粒和有机 - 无机复合颗粒的至少一种类型的颗粒; （C）至少一种选自喹啉羧酸，喹啉酸，二价有机酸（不包括喹啉酸）和羟基酸的化合物; （D）至少一种选自苯并三唑和苯并三唑衍生物的化合物; （E）氧化剂; 和（F）水，含有0.05〜2.0重量％的成分（A）的化学机械研磨用水系分散体和0.005〜1.5重量％的成分（B），其比例（W
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公开(公告)号：US06653267B2
公开(公告)日：2003-11-25
申请号：US09893961
申请日：2001-06-29
IPC分类号： C11D328
CPC分类号： C09G1/02 , C09K3/1463 , C23F3/04 , H01L21/3212
摘要： The present invention provides an aqueous dispersion for chemical mechanical polishing suitable for polishing of copper, which has a high polishing speed and a low erosion rate with overpolishing. The aqueous dispersion for chemical mechanical polishing of the invention contains a compound having a heterocycle, a surfactant and an oxidizing agent, wherein the compound having a heterocycle and the surfactant are in a weight ratio of 1:10 to 1:0.03. The aqueous dispersion may also contain abrasive particle. The compound having a heterocycle is preferably quinaldic acid, benzotriazole or the like. The surfactant is preferably a sulfonic acid salt such as potassium dodecylbenzenesulfonate or ammonium dodecylbenzenesulfonate, and the oxidizing agent is preferably ammonium persulfate, hydrogen peroxide or the like. The abrasive particle used may be inorganic particle such as colloidal silica, an organic particle such as polymer particle, or an organic/inorganic composite particle comprising a combination thereof.
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