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    SEMICONDUCTOR DEVICE
    4.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20110101417A1

    公开(公告)日：2011-05-05

    申请号：US13005589

    申请日：2011-01-13

    申请人： Tsuneo OGURA ,  Masakazu Yamaguchi ,  Tomoki Inoue ,  Hideaki Ninomiya ,  Koichi Sugiyama

    发明人： Tsuneo OGURA ,  Masakazu Yamaguchi ,  Tomoki Inoue ,  Hideaki Ninomiya ,  Koichi Sugiyama

    IPC分类号： H01L29/739

    CPC分类号： H01L29/1095 ,  H01L29/0834 ,  H01L29/7397

    摘要： A semiconductor device comprises a first base layer of a first conductivity type; a plurality of second base layers of a second conductivity type, provided on a part of a first surface of the first base layer; trenches formed on each side of the second base layers, and formed to be deeper than the second base layers; an emitter layer formed along the trench on a surface of the second base layers; a collector layer of the second conductivity type, provided on a second surface of the first base layer opposite to the first surface; an insulating film formed on an inner wall of the trench, the insulating film being thicker on a bottom of the trench than on a side surface of the trench; a gate electrode formed within the trench, and isolated from the second base layers and the emitter layer by the insulating film; and a space section provided between the second base layers adjacent to each other, the space section being deeper than the second base layers and being electrically isolated from the emitter layer and the second base layers.

    摘要翻译： 半导体器件包括第一导电类型的第一基极层; 多个第二导电类型的第二基层，设置在所述第一基底层的第一表面的一部分上; 沟槽形成在第二基底层的每一侧上，并且形成为比第二基底层更深; 在所述第二基底层的表面上沿着所述沟槽形成的发射极层; 设置在与第一表面相对的第一基底层的第二表面上的第二导电类型的集电极层; 形成在所述沟槽的内壁上的绝缘膜，所述绝缘膜在所述沟槽的底部比在所述沟槽的侧表面上更厚; 形成在所述沟槽内并与所述第二基极层和所述发射极层通过所述绝缘膜隔离的栅电极; 以及设置在彼此相邻的第二基底层之间的空间部分，空间部分比第二基底层更深，并且与发射极层和第二基底层电隔离。

    Semiconductor device having rectifying action
    5.
    发明授权
    Semiconductor device having rectifying action 有权
    具有整流作用的半导体装置

    公开(公告)号：US07781869B2

    公开(公告)日：2010-08-24

    申请号：US11498793

    申请日：2006-08-04

    申请人： Tomoki Inoue ,  Koichi Sugiyama ,  Hideaki Ninomiya ,  Tsuneo Ogura

    发明人： Tomoki Inoue ,  Koichi Sugiyama ,  Hideaki Ninomiya ,  Tsuneo Ogura

    IPC分类号： H01L31/075 ,  H01L27/095

    CPC分类号： H01L29/868 ,  H01L29/0623 ,  H01L29/861 ,  H01L29/872 ,  H01L29/8725

    摘要： A semiconductor device including a base layer of a first conductivity type having a first main surface and a second main surface opposite the first main surface, a first main electrode layer connected to the first main surface, control regions arranged inside grooves penetrating the first main electrode layer and reach inside the base layer, and a second main electrode layer of the first conductivity type and connected to the second main surface.

    摘要翻译： 一种半导体器件，包括具有第一主表面和与第一主表面相对的第二主表面的第一导电类型的基底层，连接到第一主表面的第一主电极层，布置在穿过第一主电极的沟槽内的控制区域 并且到达基底层内部，并且具有第一导电类型并连接到第二主表面的第二主电极层。

    Solid-state image sensing device
    6.
    发明授权
    Solid-state image sensing device 有权
    固态摄像装置

    公开(公告)号：US07372089B2

    公开(公告)日：2008-05-13

    申请号：US11369734

    申请日：2006-03-08

    申请人： Tomoki Inoue ,  Shinji Uya

    发明人： Tomoki Inoue ,  Shinji Uya

    IPC分类号： H01L31/062

    CPC分类号： H01L27/14893 ,  H01L27/14647

    摘要： A solid-state image sensing device provided with photoelectric conversion films stacked above a semiconductor substrate, comprising: first impurity regions as defined herein; second impurity regions as defined herein; signal charge reading regions as defined herein; and third impurity regions as defined herein.

    摘要翻译： 一种设置在半导体衬底上方的光电转换膜的固态摄像装置，包括：如本文所定义的第一杂质区; 如本文所定义的第二杂质区; 信号电荷读取区域; 和第三杂质区域。

    Semiconductor device having rectifying action
    7.
    发明申请
    Semiconductor device having rectifying action 有权
    具有整流作用的半导体装置

    公开(公告)号：US20060267129A1

    公开(公告)日：2006-11-30

    申请号：US11498793

    申请日：2006-08-04

    申请人： Tomoki Inoue ,  Koichi Sugiyama ,  Hideaki Ninomiya ,  Tsuneo Ogura

    发明人： Tomoki Inoue ,  Koichi Sugiyama ,  Hideaki Ninomiya ,  Tsuneo Ogura

    IPC分类号： H01L31/07

    CPC分类号： H01L29/868 ,  H01L29/0623 ,  H01L29/861 ,  H01L29/872 ,  H01L29/8725

    摘要： A semiconductor device including a base layer of a first conductivity type having a first main surface and a second main surface opposite the first main surface, a first main electrode layer connected to the first main surface, control regions arranged inside grooves penetrating the first main electrode layer and reach inside the base layer, and a second main electrode layer of the first conductivity type and connected to the second main surface.

    摘要翻译： 一种半导体器件，包括具有第一主表面和与第一主表面相对的第二主表面的第一导电类型的基底层，连接到第一主表面的第一主电极层，布置在穿过第一主电极的沟槽内的控制区域 并且到达基底层内部，并且具有第一导电类型并连接到第二主表面的第二主电极层。

    Semiconductor device
    8.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US07119379B2

    公开(公告)日：2006-10-10

    申请号：US10689608

    申请日：2003-10-22

    申请人： Hideaki Ninomiya ,  Tomoki Inoue

    发明人： Hideaki Ninomiya ,  Tomoki Inoue

    IPC分类号： H01L29/32 ,  H01L29/94 ,  H01L29/768 ,  H01L23/58

    CPC分类号： H01L29/404 ,  H01L29/0619 ,  H01L29/0692 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device disclosed herein comprises: a first base region which is of a first conductivity type; a second base region which is of a second conductivity type and which is selectively formed on a major surface of the first base region; a stopper region which is of a first conductivity type and which is formed on the major surface of the first base region, the stopper region being a predetermined distance away from the second base region and surrounding the second base region; and a ring region which is of a second conductivity type which is formed on the major surface of the first base region between the second base region and the stopper region, the ring region being spirally around the second base region and electrically connected to the second base region and the stopper region.

    Semiconductor device
    9.
    发明申请
    Semiconductor device 有权

    公开(公告)号：US20060202308A1

    公开(公告)日：2006-09-14

    申请号：US11434185

    申请日：2006-05-16

    申请人： Koichi Sugiyama ,  Tomoki Inoue ,  Hideaki Ninomiya ,  Masakazu Yamaguchi

    发明人： Koichi Sugiyama ,  Tomoki Inoue ,  Hideaki Ninomiya ,  Masakazu Yamaguchi

    IPC分类号： H01L27/082

    CPC分类号： H01L29/7397 ,  H01L29/4232 ,  H01L29/42372 ,  H01L29/7395

    摘要： A semiconductor device comprises a first base layer of a first conductive type which has a first surface and a second surface; a second base layer of a second conductive type which is formed on the first surface; first and second gate electrodes which are formed by embedding an electrically conductive material into a plurality of trenches via gate insulating films, the plurality of trenches being formed such that bottoms of the trenches reach the first base layer; source layers of the first conductive type which are formed on a surface area of the second base layer so as to be adjacent to both side walls of the trench provided with the first gate electrode and one side wall of the trench provided with the second gate electrode, respectively; an emitter layer of the second conductive type which is formed on the second surface; emitter electrodes which are formed on the second base layer and the source layers; a collector electrode which is formed on the emitter layer; and first and second terminals which are electrically connected to the first and second gate electrodes, respectively.