摘要:
A solid state imaging element including light receiving elements and microlenses is placed in a recess of a ceramic package. A black resin fills space between the ceramic package and the solid state imaging element.
摘要:
A light receiving region 21 and a floating diffusion region 22 are formed apart from each other in a semiconductor substrate 20 (S11), translucent adhesive 31 is applied to an area corresponding to the light receiving region 21 on the semiconductor substrate 20 (S22), and a translucent plate 30 is attached to the semiconductor substrate 20 on which the translucent adhesive 31 has been applied (S23). In this semiconductor manufacturing process, before the translucent adhesive 31 is applied, a dam member 24 is formed on the semiconductor substrate 20 so as to prevent the translucent adhesive 31 from flowing into an area corresponding to the floating diffusion region 22 on the semiconductor substrate 20 (S18).
摘要:
An optical device includes a substrate, a plurality of optical elements formed in an element formation region of the substrate, a plurality of lenses formed over the element formation region so as to correspond to the plurality of optical elements, and a protective layer formed so as to cover the plurality of lenses. A holding member is formed on the protective layer in a region outside the element formation region. The holding member holds a bottom surface of a transparent member. A gap between the protective layer and the transparent member is filled with an adhesive.
摘要:
An optical device includes a substrate, a plurality of optical elements formed in an element formation region of the substrate, a plurality of lenses formed over the element formation region so as to correspond to the plurality of optical elements, and a protective layer formed so as to cover the plurality of lenses. A holding member is formed on the protective layer in a region outside the element formation region. The holding member holds a bottom surface of a transparent member. A gap between the protective layer and the transparent member is filled with an adhesive.
摘要:
A semiconductor device including a package (2) having a plurality of wall portions (9a) and a plurality of conductor portions (4), a semiconductor element such as a solid-state image pickup device (1) mounted in an internal space of the base, thin metal wires (5) electrically connecting the semiconductor element and the conductor portions (4) between the wall portions (9a), a resin sealing material (7) implanted in the spaces between the wall portions (9a), and a closing member such as a cover glass (6). The region for connecting the thin metal wires (5) and the wall portion (9a) region overlap each other, so that the device can be reduced in size and in height. The cover glass (6) can not move easily from the correct position because the wall portions (9a) serve as supporting columns, thereby improving the yield.
摘要:
A semiconductor device including a package (2) having a plurality of wall portions (9a) and a plurality of conductor portions (4), a semiconductor element such as a solid-state image pickup device (1) mounted in an internal space of the base, thin metal wires (5) electrically connecting the semiconductor element and the conductor portions (4) between the wall portions (9a), a resin sealing material (7) implanted in the spaces between the wall portions (9a), and a closing member such as a cover glass (6). The region for connecting the thin metal wires (5) and the wall portion (9a) region overlap each other, so that the device can be reduced in size and in height. The cover glass (6) can not move easily from the correct position because the wall portions (9a) serve as supporting columns, thereby improving the yield.
摘要:
An optical device includes a substrate, an optical element, a translucent component, a plurality of first terminals and a sealant. The sealant is located lower than the top surface of the translucent component. The top surface of the translucent component is exposed out of the sealant, while the side surface of the translucent component is covered with the sealant.
摘要:
An optical device includes a substrate, an optical element, a translucent component, a plurality of first terminals and a sealant. The sealant is located lower than the top surface of the translucent component. The top surface of the translucent component is exposed out of the sealant, while the side surface of the translucent component is covered with the sealant.
摘要:
A laminated film including a thermoplastic resin film and an laminated layer that is formed on at least one side of the thermoplastic resin film and comprises (A) a composition, (B) an epoxy crosslinking agent and (C) an acrylic resin having an alkyl chain of 18 to 25 carbon atoms is characterized in that the composition (A) is a composition containing at least a polythiophene and a polyanion and/or a composition containing a polythiophene derivative and a polyanion, the laminated layer contains 15 to 100 parts by weight of the acrylic resin (C) having an alkyl chain of 18 to 25 carbon atoms based on 100 parts by weight of the sum of the composition (A) and the crosslinking agent (B) and/or its reaction product, at least one side of the laminated film has a three-dimensional average surface roughness (SRa) of 3 to 50 nm, and the laminated film contains less than 10 internal contaminant particles with an average particle size of at least 100 μm per 1 m2, so that it has high level of electrical conductivity, good releasability and water resistance, and also has oligomer precipitation-preventing properties during heating.
摘要:
In a constant current circuit, a constant current is caused to flow through a resistor, thereby causing a constant voltage to occur across the resistor. This constant voltage is then superimposed on an output signal of an operational amplifier that is to be fed back to the drain of a field effect transistor, thereby maintaining the same potential in an AC manner between the output terminal of the operational amplifier and the drain of the field effect transistor. In this way, the gate and drain of the field effect transistor is caused to exhibit the same potential in an AC manner, so that no current will occur through the stray capacitance between the gate and drain of the field effect transistor. As a result, similarly to a case of using a feedback capacitor, the input impedance of the field effect transistor can be raised.