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1.发明授权Field effect transistor, method of producing the same, and method of producing laminated member 失效场效应晶体管，其制造方法以及层叠体的制造方法公开(公告)号：US08021915B2
公开(公告)日：2011-09-20
申请号：US12354745
申请日：2009-01-15
申请人： Daisuke Miura , Tomonari Nakayama , Toshinobu Ohnishi , Makoto Kubota , Akane Masumoto , Hidetoshi Tsuzuki , Makiko Miyachi
发明人： Daisuke Miura , Tomonari Nakayama , Toshinobu Ohnishi , Makoto Kubota , Akane Masumoto , Hidetoshi Tsuzuki , Makiko Miyachi
IPC分类号： H01L51/00
CPC分类号： H01L51/0512 , H01L51/0012 , H01L51/0077 , H01L51/0078 , H01L51/0533 , H01L51/0545
摘要： There is provided a field effect transistor having an organic semiconductor layer, including: an organic semiconductor layer containing at least porphyrin; and a layer composed of at least a polysiloxane compound, the layer being laminated on the organic semiconductor layer so as to be in intimate contact with the organic semiconductor layer. As a result, there can be provided a field effect transistor which enables an organic semiconductor layer having high crystallinity and high orientation to be formed and which exhibits a high mobility.
摘要翻译： 提供了具有有机半导体层的场效应晶体管，包括：至少含有卟啉的有机半导体层; 以及由至少聚硅氧烷化合物构成的层，该层层叠在有机半导体层上以与有机半导体层紧密接触。 结果，可以提供能够形成具有高结晶度和高取向性的有机半导体层并具有高迁移率的场效应晶体管。
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公开(公告)号：US20080308789A1
公开(公告)日：2008-12-18
申请号：US10571688
申请日：2005-03-08
申请人： Daisuke Miura , Tomonari Nakayama , Toshinobu Ohnishi , Makoto Kubota , Akane Masumoto , Satomi Sugiyama
发明人： Daisuke Miura , Tomonari Nakayama , Toshinobu Ohnishi , Makoto Kubota , Akane Masumoto , Satomi Sugiyama
CPC分类号： H01L51/0077 , C07D487/22 , H01L51/0003 , H01L51/0525 , H01L51/0545
摘要： An object of the present invention is to provide a field effect transistor showing high field-effect mobility and a high ON/OFF ratio, which can be produced simply by using a porphyrin compound with excellent crystallinity and orientation. The field effect transistor according to the present invention transistor contains at least an organic semiconductor layer, wherein the organic semiconductor layer contains at least a porphyrin compound and has a maximum diffraction intensity I1 in a Bragg angle (2θ) range of 9.9° to 10.4° stronger than a maximum diffraction intensity I2 in a Bragg angle (2θ) range of 23.0° to 26.0° in X-ray diffraction using CuKα radiation.
摘要翻译： 本发明的目的是提供一种场效应晶体管，其表现出高场效应迁移率和高ON / OFF比，其可以简单地通过使用具有优异结晶性和取向性的卟啉化合物来制备。 根据本发明晶体管的场效应晶体管至少含有有机半导体层，其中有机半导体层至少含有卟啉化合物，并且在9.9°至10.4°的布拉格角（2θ）范围内具有最大衍射强度I1 在使用CuKalpha辐射的X射线衍射中，在23.0°至26.0°的布拉格角（2θ）范围内的最大衍射强度I2强。
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公开(公告)号：US07960716B2
公开(公告)日：2011-06-14
申请号：US10571688
申请日：2005-03-08
申请人： Daisuke Miura , Tomonari Nakayama , Toshinobu Ohnishi , Makoto Kubota , Akane Masumoto , Satomi Sugiyama
发明人： Daisuke Miura , Tomonari Nakayama , Toshinobu Ohnishi , Makoto Kubota , Akane Masumoto , Satomi Sugiyama
CPC分类号： H01L51/0077 , C07D487/22 , H01L51/0003 , H01L51/0525 , H01L51/0545
摘要： An object of the present invention is to provide a field effect transistor showing high field-effect mobility and a high ON/OFF ratio, which can be produced simply by using a porphyrin compound with excellent crystallinity and orientation. The field effect transistor according to the present invention transistor contains at least an organic semiconductor layer, wherein the organic semiconductor layer contains at least a porphyrin compound and has a maximum diffraction intensity I1 in a Bragg angle (2θ) range of 9.9° to 10.4° stronger than a maximum diffraction intensity I2 in a Bragg angle (2θ) range of 23.0° to 26.0° in X-ray diffraction using CuKα radiation.
摘要翻译： 本发明的目的是提供一种场效应晶体管，其表现出高场效应迁移率和高ON / OFF比，其可以简单地通过使用具有优异结晶性和取向性的卟啉化合物来制备。 根据本发明晶体管的场效应晶体管至少含有有机半导体层，其中有机半导体层至少含有卟啉化合物，并且在9.9°至10.4的布拉格角（2θ）范围内具有最大衍射强度I1 °，在使用CuKα辐射的X射线衍射中的布拉格角（2θ）范围内的最大衍射强度I2强于23.0°至26.0°。
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公开(公告)号：US20080048185A1
公开(公告)日：2008-02-28
申请号：US11892326
申请日：2007-08-22
IPC分类号： H01L51/30
CPC分类号： C07D487/22 , H01L51/0078 , H01L51/0545
摘要： Provided is a field effect transistor having an organic semiconductor layer, in which the organic semiconductor layer contains at least a tetrabenzo copper porphyrin crystal and has peaks at two or more of Bragg angles (2θ) in CuKα X-ray diffraction of 8.4°±0.2°, 10.2°±0.2°, 11.8°±0.2°, and 16.9°±0.2°, and the tetrabenzo copper porphyrin crystal comprises a compound represented by the following general formula (1). General Formula (1): (Wherein R2's each represent a hydrogen atom, a halogen atom, a hydroxyl group, or an alkyl group, oxyalkyl group, thioalkyl group, or alkylester group having 1 to 12 carbon atoms, and R3's each represent a hydrogen atom or an aryl group.)
摘要翻译： 提供了具有有机半导体层的场效应晶体管，其中有机半导体层至少包含四苯并卟啉晶体，并且在CuKαX射线衍射中的两个或更多个布拉格角（2θ）处具有8.4°±0.2的峰 °，10.2°±0.2°，11.8°±0.2°和16.9°±0.2°，四苯并卟啉晶体包含由以下通式（1）表示的化合物。 通式（1）表示：（其中R 2各自表示氢原子，卤原子，羟基或烷基，烷氧基，硫代烷基或烷基酯基， 12个碳原子和R 3各自表示氢原子或芳基。）
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公开(公告)号：US20070096079A1
公开(公告)日：2007-05-03
申请号：US10559799
申请日：2005-06-09
IPC分类号： H01L29/08
CPC分类号： H01L51/052 , H01L51/0036 , H01L51/0037 , H01L51/0097
摘要： There is provided a field effect transistor including a substrate, an organic semiconductor layer 6, an insulating layer 3, and a conductive layers 2, 4, and 5, wherein the insulating layer 3 comprises a cured product of a phenol resin represented by the following general formula (1): (R1, R2 and R3 each represent hydrogen atom, halogen atom, hydroxymethyl group, alkyl group having 1 to 12 carbon atoms, alkenyl group, alkinyl group, alkoxyl group, alkylthio group, or alkyl ester group, X1 and X2 each represent hydrogen atom, alkyl group having 1 to 12 carbon atoms, alkenyl group, alkinyl group, or aryl group, and n represents an integer of 0 to 2,000.) According to the present invention, a field effect transistor capable of smoothening the gate electrode having a low surface smoothness, in which a current leak to the gate electrode is small can be obtained.
摘要翻译： 提供了包括基板，有机半导体层6，绝缘层3和导电层2,4和5的场效应晶体管，其中绝缘层3包括由下列物质表示的酚醛树脂的固化产物 通式（1）：（R 1，R 2，R 2和R 3）各自表示氢原子，卤素原子，羟甲基，具有 1至12个碳原子，烯基，炔基，烷氧基，烷硫基或烷基酯基，X 1和X 2各自表示氢原子，具有 1〜12个碳原子，烯基，炔基或芳基，n表示0〜2,000的整数。）根据本发明，能够使具有低表面平滑度的栅电极平滑的场效应晶体管， 可以获得对栅电极的电流泄漏小的电流。
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公开(公告)号：US07285441B2
公开(公告)日：2007-10-23
申请号：US10545398
申请日：2004-08-17
IPC分类号： H01L51/40
CPC分类号： C07D487/22 , H01L51/0078 , H01L51/0545
摘要： Provided is a field effect transistor having an organic semiconductor layer, in which the organic semiconductor layer contains at least a tetrabenzo copper porphyrin crystal and has peaks at two or more of Bragg angles (2θ) in CuKα X-ray diffraction of 8.4°±0.2°, 10.2°±0.2°, 11.8°±0.2°, and 16.9°±0.2°, and the tetrabenzo copper porphyrin crystal comprises a compound represented by the following general formula (1): (Wherein R2's each represent a hydrogen atom, a halogen atom, a hydroxyl group, or an alkyl group, oxyalkyl group, thioalkyl group, or alkylester group having 1 to 12 carbon atoms, and R3's each represent a hydrogen atom or an aryl group.)
摘要翻译： 提供了具有有机半导体层的场效应晶体管，其中有机半导体层至少包含四苯并卟啉晶体，并且在CuKαX射线衍射中的两个或更多个布拉格角（2θ）处具有8.4°±0.2的峰 °，10.2°±0.2°，11.8°±0.2°和16.9°±0.2°，四苯并卟啉晶体包含由以下通式（1）表示的化合物：（其中R 2 2 / 各自表示氢原子，卤素原子，羟基或烷基，烷氧基，硫代烷基或碳原子数1〜12的烷基酯基，R 3为 各自表示氢原子或芳基。）
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7.发明申请Field effect transistor, method of producing the same, and method of producing laminated member 失效场效应晶体管，其制造方法以及层叠体的制造方法公开(公告)号：US20070012914A1
公开(公告)日：2007-01-18
申请号：US10555614
申请日：2005-03-09
申请人： Daisuke Miura , Tomonari Nakayama , Toshinobu Ohnishi , Makoto Kubota , Akane Masumoto , Hidetoshi Tsuzuki , Makiko Miyachi
发明人： Daisuke Miura , Tomonari Nakayama , Toshinobu Ohnishi , Makoto Kubota , Akane Masumoto , Hidetoshi Tsuzuki , Makiko Miyachi
IPC分类号： H01L29/08
CPC分类号： H01L51/0512 , H01L51/0012 , H01L51/0077 , H01L51/0078 , H01L51/0533 , H01L51/0545
摘要： There is provided a field effect transistor having an organic semiconductor layer, including: an organic semiconductor layer containing at least porphyrin; and a layer composed of at least a polysiloxane compound, the layer being laminated on the organic semiconductor layer so as to be in intimate contact with the organic semiconductor layer. As a result, there can be provided a field effect transistor which enables an organic semiconductor layer having high crystallinity and high orientation to be formed and which exhibits a high mobility.
摘要翻译： 提供了具有有机半导体层的场效应晶体管，包括：至少含有卟啉的有机半导体层; 以及由至少聚硅氧烷化合物构成的层，该层层叠在有机半导体层上以与有机半导体层紧密接触。 结果，可以提供能够形成具有高结晶度和高取向性的有机半导体层并具有高迁移率的场效应晶体管。
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公开(公告)号：US20060145141A1
公开(公告)日：2006-07-06
申请号：US10545398
申请日：2004-08-17
CPC分类号： C07D487/22 , H01L51/0078 , H01L51/0545
摘要： Provided is a field effect transistor having an organic semiconductor layer, in which the organic semiconductor layer contains at least a tetrabenzo copper porphyrin crystal and has peaks at two or more of Bragg angles (2θ) in CuKα X-ray diffraction of 8.4°±0.2°, 10.2°±0.2°, 11.80°±0.20°, and 16.90°±0.20°, and the tetrabenzo copper porphyrin crystal comprises a compound represented by the following general formula (1): (Wherein R2's each represent a hydrogen atom, a halogen atom, a hydroxyl group, or an alkyl group, oxyalkyl group, thioalkyl group, or alkylester group having 1 to 12 carbon atoms, and R3's each represent a hydrogen atom or an aryl group.)
摘要翻译： 提供了具有有机半导体层的场效应晶体管，其中有机半导体层至少包含四苯并卟啉晶体，并且在CuKαX射线衍射中的两个或更多个布拉格角（2θ）处具有8.4°±0.2的峰 °，10.2°±0.2°，11.80°±0.20°和16.90°±0.20°，四苯并卟啉晶体包含由以下通式（1）表示的化合物：其中R 2 各自表示氢原子，卤素原子，羟基或烷基，烷氧基，硫代烷基或碳原子数1〜12的烷基酯基，R 3为 各自表示氢原子或芳基。）
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公开(公告)号：US07605392B2
公开(公告)日：2009-10-20
申请号：US10559799
申请日：2005-06-09
IPC分类号： H01L29/08
CPC分类号： H01L51/052 , H01L51/0036 , H01L51/0037 , H01L51/0097
摘要： There is provided a field effect transistor including a substrate, an organic semiconductor layer 6, an insulating layer 3, and a conductive layers 2, 4, and 5, wherein the insulating layer 3 comprises a cured product of a phenol resin represented by the following general formula (1): (R1, R2 and R3 each represent hydrogen atom, halogen atom, hydroxymethyl group, alkyl group having 1 to 12 carbon atoms, alkenyl group, alkinyl group, alkoxyl group, alkylthio group, or alkyl ester group, X1 and X2 each represent hydrogen atom, alkyl group having 1 to 12 carbon atoms, alkenyl group, alkinyl group, or aryl group, and n represents an integer of 0 to 2,000.) According to the present invention, a field effect transistor capable of smoothening the gate electrode having a low surface smoothness, in which a current leak to the gate electrode is small can be obtained.
摘要翻译： 提供了包括基板，有机半导体层6，绝缘层3和导电层2,4和5的场效应晶体管，其中绝缘层3包括由下列物质表示的酚醛树脂的固化产物 通式（1）：（R1，R2和R3各自表示氢原子，卤素原子，羟甲基，碳原子数1〜12的烷基，烯基，炔基，烷氧基，烷硫基或烷基酯基） X2表示氢原子，碳原子数1〜12的烷基，烯基，炔基或芳基，n表示0〜2,000的整数。）根据本发明，能够平滑化的场效应晶体管 可以获得其中对栅电极的电流泄漏小的表面平滑度低的栅电极。
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10.发明申请FIELD EFFECT TRANSISTOR, METHOD OF PRODUCING THE SAME, AND METHOD OF PRODUCING LAMINATED MEMBER 失效场效应晶体管及其制造方法，以及生产层叠构件的方法公开(公告)号：US20090124040A1
公开(公告)日：2009-05-14
申请号：US12354745
申请日：2009-01-15
申请人： Daisuke Miura , Tomonari Nakayama , Toshinobu Ohnishi , Makoto Kubota , Akane Masumoto , Hidetoshi Tsuzuki , Makiko Miyachi
发明人： Daisuke Miura , Tomonari Nakayama , Toshinobu Ohnishi , Makoto Kubota , Akane Masumoto , Hidetoshi Tsuzuki , Makiko Miyachi
IPC分类号： H01L51/40
CPC分类号： H01L51/0512 , H01L51/0012 , H01L51/0077 , H01L51/0078 , H01L51/0533 , H01L51/0545
摘要： There is provided a field effect transistor having an organic semiconductor layer, including: an organic semiconductor layer containing at least porphyrin; and a layer composed of at least a polysiloxane compound, the layer being laminated on the organic semiconductor layer so as to be in intimate contact with the organic semiconductor layer. As a result, there can be provided a field effect transistor which enables an organic semiconductor layer having high crystallinity and high orientation to be formed and which exhibits a high mobility.
摘要翻译： 提供了具有有机半导体层的场效应晶体管，包括：至少含有卟啉的有机半导体层; 以及由至少聚硅氧烷化合物构成的层，该层层叠在有机半导体层上以与有机半导体层紧密接触。 结果，可以提供能够形成具有高结晶度和高取向性的有机半导体层并具有高迁移率的场效应晶体管。
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