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公开(公告)号:US20080185712A1
公开(公告)日:2008-08-07
申请号:US11968840
申请日:2008-01-03
申请人: Fujio Kanayama , Tomoshi Ohde , Mitsuru Adachi , Tetsunori Niimi , Hidetoshi Kusano , Yuji Nishitani
发明人: Fujio Kanayama , Tomoshi Ohde , Mitsuru Adachi , Tetsunori Niimi , Hidetoshi Kusano , Yuji Nishitani
CPC分类号: H01L23/315 , H01L21/565 , H01L23/055 , H01L23/3121 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/73253 , H01L2924/00011 , H01L2924/00014 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/15311 , H01L2924/19041 , H01L2924/00012 , H01L2924/00 , H01L2224/0401
摘要: A semiconductor device is provided in which the effect of the heat generated by a flip-chip mounted semiconductor on resin is suppressed. The semiconductor device includes: a substrate; a semiconductor chip which is mounted on the substrate with a front surface of the semiconductor chip facing downward; and a molding resin layer provided on a semiconductor chip-mounted surface of the substrate so as to be spaced apart from the semiconductor chip and to surround the semiconductor chip. In addition, the upper surface of the molding resin layer is positioned higher than the rear surface of the semiconductor chip.
摘要翻译: 提供一种半导体器件,其中抑制由倒装芯片安装的半导体产生的热对树脂的影响。 半导体器件包括:衬底; 半导体芯片,其安装在基板上,半导体芯片的前表面朝下; 以及模塑树脂层,设置在与半导体芯片间隔开并围绕半导体芯片的基板的半导体芯片安装表面上。 此外,成型树脂层的上表面位于比半导体芯片的后表面更高的位置。
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公开(公告)号:US07880317B2
公开(公告)日:2011-02-01
申请号:US12094314
申请日:2006-10-30
申请人: Tomoshi Ohde , Fujio Kanayama , Mitsuru Adachi , Tetsunori Niimi , Hidetoshi Kusano , Yuji Nishitani
发明人: Tomoshi Ohde , Fujio Kanayama , Mitsuru Adachi , Tetsunori Niimi , Hidetoshi Kusano , Yuji Nishitani
CPC分类号: H01L23/3128 , H01L21/565 , H01L23/3737 , H01L23/49816 , H01L23/49822 , H01L23/50 , H01L2224/16 , H01L2224/16225 , H01L2224/16227 , H01L2224/32225 , H01L2224/73204 , H01L2224/81193 , H01L2924/00014 , H01L2924/01004 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/15311 , H01L2924/1815 , H01L2924/19041 , H01L2924/00 , H01L2224/0401
摘要: A semiconductor device is provided in which the heat dissipation characteristic of a flip-chip mounted semiconductor chip is improved. A semiconductor device is provided with a substrate, a semiconductor flip-chip mounted on the substrate, a sealing resin layer for sealing around the semiconductor flip-chip. A sealing resin layer for sealing the semiconductor chip is formed around the semiconductor chip. In this semiconductor device, the back surface of the semiconductor chip is exposed and is convex with respect to the upper surface of the sealing resin layer.
摘要翻译: 提供一种半导体器件,其中提供了安装倒装芯片的半导体芯片的散热特性。 半导体器件设置有衬底,安装在衬底上的半导体倒装芯片,用于密封半导体倒装芯片周围的密封树脂层。 在半导体芯片周围形成用于密封半导体芯片的密封树脂层。 在该半导体装置中,半导体芯片的背面露出,相对于密封树脂层的上表面凸出。
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公开(公告)号:US20090302450A1
公开(公告)日:2009-12-10
申请号:US12094314
申请日:2006-10-30
申请人: Tomoshi Ohde , Fujio Kanayama , Mitsuru Adachi , Tetsunori Nimi , Hidetoshi Kusano , Yuji Nashitani
发明人: Tomoshi Ohde , Fujio Kanayama , Mitsuru Adachi , Tetsunori Nimi , Hidetoshi Kusano , Yuji Nashitani
CPC分类号: H01L23/3128 , H01L21/565 , H01L23/3737 , H01L23/49816 , H01L23/49822 , H01L23/50 , H01L2224/16 , H01L2224/16225 , H01L2224/16227 , H01L2224/32225 , H01L2224/73204 , H01L2224/81193 , H01L2924/00014 , H01L2924/01004 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/15311 , H01L2924/1815 , H01L2924/19041 , H01L2924/00 , H01L2224/0401
摘要: A semiconductor device is provided in which the heat dissipation characteristic of a flip-chip mounted semiconductor chip is improved. A semiconductor device is provided with a substrate, a semiconductor flip-chip mounted on the substrate, a sealing resin layer for sealing around the semiconductor flip-chip. A sealing resin layer for sealing the semiconductor chip is formed around the semiconductor chip. In this semiconductor device, the back surface of the semiconductor chip is exposed and is convex with respect to the upper surface of the sealing resin layer.
摘要翻译: 提供一种半导体器件,其中提供了安装倒装芯片的半导体芯片的散热特性。 半导体器件设置有衬底,安装在衬底上的半导体倒装芯片,用于密封半导体倒装芯片周围的密封树脂层。 在半导体芯片周围形成用于密封半导体芯片的密封树脂层。 在该半导体装置中,半导体芯片的背面露出,相对于密封树脂层的上表面凸出。
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