公开(公告)号：US5406609A

公开(公告)日：1995-04-11

申请号：US44508

申请日：1993-04-09

申请人： Tomoya Arai ,  Takashi Shoji

发明人： Tomoya Arai ,  Takashi Shoji

IPC分类号： G01N23/207 ,  G01N23/223 ,  G21K1/06

CPC分类号： B82Y10/00 ,  G01N23/207 ,  G01N23/223 ,  G21K1/062 ,  G01N2223/076 ,  G21K2201/061 ,  G21K2201/064

摘要： An X-ray analysis apparatus including an artificial multi-layered grating for rendering X-ray beams to be monochromatic before they are incident on a specimen to be analyzed. This artificial multi-layered grating operates to diffract the X-ray beam, generated from an X-ray radiation source and subsequently impinging on a reflective surface of the artificial multi-layered grating, at a predetermined angle of diffraction to provide the monochromatic X-ray beams. The periodicity of the spacing of lattice planes of the artificial multi-layered grating is so chosen as to be of a value progressively varying along the reflective surface thereof with an increase in distance from the X-ray radiation source. The X-ray analysis apparatus herein disclosed is designed to avoid any possible reduction of the intensity of the X-ray beams which would occur when they are rendered to be monochromatic, and to increase the intensity of the X-ray beams to ensure an improved accuracy in spectroscopic analysis.

摘要翻译： 一种X射线分析装置，其包括人造多层光栅，用于在将X射线束入射到待分析的样本上之前使其成为单色。 这种人造多层光栅操作以衍射由X射线辐射源产生并随后以预定的衍射角撞击在人造多层光栅的反射表面上的X射线束，以提供单色X- 射线束。 人造多层光栅的晶格间距的周期性被选择为随着其与X射线辐射源的距离的增加而沿其反射表面逐渐变化的值。 这里公开的X射线分析装置被设计成避免当它们变为单色时将发生的X射线束的强度的任何可能的降低，并且增加X射线束的强度以确保改善 光谱分析的准确性。

公开(公告)号：US08436173B2

公开(公告)日：2013-05-07

申请号：US12734961

申请日：2008-12-04

申请人： Masahiro Murakami ,  Naoki Ishida ,  Mizuna Narumi ,  Yoichi Arimoto ,  Munehiro Hasegawa ,  Tomoya Arai ,  Tsuyoshi Goya

发明人： Masahiro Murakami ,  Naoki Ishida ,  Mizuna Narumi ,  Yoichi Arimoto ,  Munehiro Hasegawa ,  Tomoya Arai ,  Tsuyoshi Goya

IPC分类号： C07F5/02

CPC分类号： H01L51/008 ,  C07F5/02 ,  C07F5/027 ,  C09K11/06 ,  C09K2211/1014 ,  C09K2211/1022 ,  C09K2211/1029 ,  C09K2211/1092 ,  H01L51/5012 ,  H01L51/5048 ,  H01L51/5092 ,  H05B33/14

摘要： The present invention provides novel boron compounds which are useful, depending on their characteristics, as light-emitting materials, electron-transport materials, electron-injection materials, hole-blocking materials, or organic semiconductor materials, and which have new molecular structures quite different from those of the heretofore known boron compounds; their production processes; and functional electronic devices using the same. The novel boron compounds are, for example, those of the following formula (1): These boron compounds can be produced by, for example, reacting boron compounds of the following formula (4): with compounds of the following formula (5): in the presence of a catalyst containing at least one metal element selected from the group consisting of palladium, platinum, and nickel. These boron compounds are used for the functional electronic devices.

摘要翻译： 本发明提供新颖的硼化合物，它们根据其特性可用作发光材料，电子传输材料，电子注入材料，空穴阻挡材料或有机半导体材料，并且具有非常不同的新分子结构 从迄今已知的硼化合物的那些; 他们的生产工艺; 和使用其的功能电子设备。 新的硼化合物是例如下式（1）的那些：这些硼化合物可以通过例如使下式（4）的硼化合物与下式（5）的化合物反应来制备： 在含有选自钯，铂和镍的至少一种金属元素的催化剂的存在下进行。 这些硼化合物用于功能电子器件。

公开(公告)号：US20110175092A1

公开(公告)日：2011-07-21

申请号：US13119979

申请日：2009-09-18

申请人： Takuro Yasuda ,  Takeo Kawase ,  Junichi Karasawa ,  Kelichi Inoue ,  Kazushi Omote ,  Tomoya Arai ,  Keiko Ando ,  Yoshinobu Asako

发明人： Takuro Yasuda ,  Takeo Kawase ,  Junichi Karasawa ,  Kelichi Inoue ,  Kazushi Omote ,  Tomoya Arai ,  Keiko Ando ,  Yoshinobu Asako

IPC分类号： H01L29/04 ,  H01L21/336 ,  C08G65/40 ,  C08G63/682

CPC分类号： H01L51/0558 ,  C08G65/4012 ,  C08G65/4025 ,  C08G75/0218 ,  C08G75/08 ,  C08G2650/40 ,  C08L71/00 ,  H01L51/052 ,  H01L51/0541 ,  H01L51/107

摘要： The present invention provides an organic semiconductor element which has a low hygroscopic property and whose property is hardly deteriorated with time and an electronic device and electronic equipment each provided with such an organic semiconductor element and having high reliability. The organic semiconductor element of the present invention includes: a source electrode 20a; a drain electrode 20b; a gate electrode 50; a gate insulating layer 40; an organic semiconductor layer 30; and a buffer layer (another insulating layer) 60, wherein at least one of the gate insulating layer 40 and the buffer layer 60 contains an insulating polymer with a main chain having both end portions and including repeating units represented by the following general formula (1) or (2): where R1 and R2 are the same or different and each of R1 and R2 is a divalent linkage group, and Y is an oxygen atom or a sulfur atom.

摘要翻译： 本发明提供一种具有低吸湿性且性能几乎不劣化的有机半导体元件，以及各自具有这种有机半导体元件并且具有高可靠性的电子器件和电子设备。 本发明的有机半导体元件包括：源电极20a; 漏电极20b; 栅电极50; 栅极绝缘层40; 有机半导体层30; 和缓冲层（另一绝缘层）60，其中栅极绝缘层40和缓冲层60中的至少一个含有具有两端部的主链的绝缘聚合物，并且包括由以下通式（1）表示的重复单元 ）或（2）：其中R1和R2相同或不同，R1和R2各自为二价连接基团，Y为氧原子或硫原子。

公开(公告)号：US08698142B2

公开(公告)日：2014-04-15

申请号：US13119979

申请日：2009-09-18

申请人： Takuro Yasuda ,  Takeo Kawase ,  Junichi Karasawa ,  Keiichi Inoue ,  Kazushi Omote ,  Tomoya Arai ,  Keiko Ando ,  Yoshinobu Asako

发明人： Takuro Yasuda ,  Takeo Kawase ,  Junichi Karasawa ,  Keiichi Inoue ,  Kazushi Omote ,  Tomoya Arai ,  Keiko Ando ,  Yoshinobu Asako

IPC分类号： H01L29/08 ,  H01L35/24 ,  H01L51/00 ,  H01L29/04

CPC分类号： H01L51/0558 ,  C08G65/4012 ,  C08G65/4025 ,  C08G75/0218 ,  C08G75/08 ,  C08G2650/40 ,  C08L71/00 ,  H01L51/052 ,  H01L51/0541 ,  H01L51/107

摘要： The present invention provides an organic semiconductor element which has a low hygroscopic property and whose property is hardly deteriorated with time and an electronic device and electronic equipment each provided with such an organic semiconductor element and having high reliability. The organic semiconductor element of the present invention includes: a source electrode 20a; a drain electrode 20b; a gate electrode 50; a gate insulating layer 40; an organic semiconductor layer 30; and a buffer layer (another insulating layer) 60, wherein at least one of the gate insulating layer 40 and the buffer layer 60 contains an insulating polymer with a main chain having both end portions and including repeating units represented by the following general formula (1) or (2): where R1 and R2 are the same or different and each of R1 and R2 is a divalent linkage group, and Y is an oxygen atom or a sulfur atom.

摘要翻译： 本发明提供一种具有低吸湿性且性能几乎不劣化的有机半导体元件，以及各自具有这种有机半导体元件并且具有高可靠性的电子器件和电子设备。 本发明的有机半导体元件包括：源电极20a; 漏电极20b; 栅电极50; 栅极绝缘层40; 有机半导体层30; 和缓冲层（另一绝缘层）60，其中栅极绝缘层40和缓冲层60中的至少一个含有具有两端部的主链的绝缘聚合物，并且包括由以下通式（1）表示的重复单元 ）或（2）：其中R1和R2相同或不同，R1和R2各自为二价连接基团，Y为氧原子或硫原子。

公开(公告)号：US20110046372A1

公开(公告)日：2011-02-24

申请号：US12734961

申请日：2008-12-04

申请人： Masahiro Murakami ,  Naoki Ishida ,  Mizuna Narumi ,  Yoichi Arimoto ,  Munehiro Hasegawa ,  Tomoya Arai ,  Tsuyoshi Goya

发明人： Masahiro Murakami ,  Naoki Ishida ,  Mizuna Narumi ,  Yoichi Arimoto ,  Munehiro Hasegawa ,  Tomoya Arai ,  Tsuyoshi Goya

IPC分类号： C07F5/02

CPC分类号： H01L51/008 ,  C07F5/02 ,  C07F5/027 ,  C09K11/06 ,  C09K2211/1014 ,  C09K2211/1022 ,  C09K2211/1029 ,  C09K2211/1092 ,  H01L51/5012 ,  H01L51/5048 ,  H01L51/5092 ,  H05B33/14

摘要： The present invention provides novel boron compounds which are useful, depending on their characteristics, as light-emitting materials, electron-transport materials, electron-injection materials, hole-blocking materials, or organic semiconductor materials, and which have new molecular structures quite different from those of the heretofore known boron compounds; their production processes; and functional electronic devices using the same. The novel boron compounds are, for example, those of the following formula (1): These boron compounds can be produced by, for example, reacting boron compounds of the following formula (4): with compounds of the following formula (5): in the presence of a catalyst containing at least one metal element selected from the group consisting of palladium, platinum, and nickel. These boron compounds are used for the functional electronic devices.

摘要翻译： 本发明提供新颖的硼化合物，它们根据其特性可用作发光材料，电子传输材料，电子注入材料，空穴阻挡材料或有机半导体材料，并且具有非常不同的新分子结构 从迄今已知的硼化合物的那些; 他们的生产工艺; 和使用其的功能电子设备。 新的硼化合物是例如下式（1）的那些：这些硼化合物可以通过例如使下式（4）的硼化合物与下式（5）的化合物反应来制备： 在含有选自钯，铂和镍的至少一种金属元素的催化剂存在下进行。 这些硼化合物用于功能电子器件。