METHOD OF MANUFACTURING ELECTRONIC DEVICE
    5.
    发明申请
    METHOD OF MANUFACTURING ELECTRONIC DEVICE 审中-公开
    制造电子器件的方法

    公开(公告)号:US20100203713A1

    公开(公告)日:2010-08-12

    申请号:US12733595

    申请日:2008-09-05

    IPC分类号: H01L21/28 H01L21/20

    摘要: An object of this invention is to provide a method for manufacturing an electronic device wherein a conductor layer is uniformly formed on a substrate having a super large area. In the method for manufacturing the electronic device, a metal film for forming a gate electrode is selectively embedded in a transparent resin film formed on a substrate, and the metal film is formed by sputtering directly on the substrate at the gate electrode portion, and on an insulating coat film on portions other than the gate electrode portion. The metal film on the insulating coat film is removed by chemical liftoff with removal of the insulating coat film by etching.

    摘要翻译: 本发明的目的是提供一种电子器件的制造方法,其中导体层均匀地形成在具有超大面积的基片上。 在电子设备的制造方法中,用于形成栅电极的金属膜选择性地嵌入到形成在基板上的透明树脂膜中,并且金属膜通过在栅电极部分处直接溅射在基板上而形成, 在除了栅电极部分之外的部分上的绝缘涂膜。 通过化学剥离除去绝缘涂膜上的金属膜,通过蚀刻除去绝缘涂膜。