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    Method for manufacturing semiconductor substrate
    9.
    发明授权
    Method for manufacturing semiconductor substrate 有权
    半导体衬底的制造方法

    公开(公告)号：US08263478B2

    公开(公告)日：2012-09-11

    申请号：US12805582

    申请日：2010-08-06

    申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

    发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

    IPC分类号： H01L21/30 ,  H01L21/46

    CPC分类号： H01L21/76254 ,  H01L27/1266 ,  H01L29/78603

    摘要： Hydrogen ions are implanted to a surface (main surface) of the single crystal Si substrate 10 at a dosage of 1.5×1017 atoms/cm2 or higher to form the hydrogen ion implanted layer (ion-implanted damage layer) 11. As a result of the hydrogen ion implantation, the hydrogen ion implanted boundary 12 is formed. The single crystal Si substrate 10 and the low melting glass substrate 20 are bonded together. The bonded substrate is heated at relatively low temperature, 120° C. or higher and 250° C. or lower (below a melting point of the support substrate). Further, an external shock is applied to delaminate the Si crystal film along the hydrogen ion implanted boundary 12 of the single crystal Si substrate 10 out of the heat-treated bonded substrate. Then, the surface of the resultant silicon thin film 13 is polished to remove a damaged portion, so that a semiconductor substrate can be fabricated. There can be provided a semiconductor substrate in which a high-quality silicon thin film is transferred onto a substrate made of a low melting point material.

    摘要翻译： 将氢离子以1.5×10 17原子/ cm 2或更高的剂量注入单晶Si衬底10的表面（主表面），以形成氢离子注入层（离子注入损伤层）11。 氢离子注入，形成氢离子注入边界12。 单晶Si衬底10和低熔点玻璃衬底20结合在一起。 键合衬底在相对较低的温度，120℃或更高和250℃或更低（低于支撑衬底的熔点）下加热。 此外，施加外部冲击以沿着经热处理的键合衬底的单晶Si衬底10的氢离子注入边界12将Si晶体膜分层。 然后，对所得的硅薄膜13的表面进行抛光以去除损坏部分，从而可以制造半导体衬底。 可以提供一种半导体衬底，其中将高质量的硅薄膜转移到由低熔点材料制成的衬底上。

    Method for producing single crystal silicon solar cell and single crystal silicon solar cell
    10.
    发明授权
    Method for producing single crystal silicon solar cell and single crystal silicon solar cell 有权
    单晶硅太阳能电池和单晶硅太阳能电池的制造方法

    公开(公告)号：US08227290B2

    公开(公告)日：2012-07-24

    申请号：US11976026

    申请日：2007-10-19

    申请人： Atsuo Ito ,  Shoji Akiyama ,  Masahiro Furuya ,  Makoto Kawai ,  Koichi Tanaka ,  Yoshihiro Kubota ,  Yuuji Tobisaka

    发明人： Atsuo Ito ,  Shoji Akiyama ,  Masahiro Furuya ,  Makoto Kawai ,  Koichi Tanaka ,  Yoshihiro Kubota ,  Yuuji Tobisaka

    IPC分类号： H01L21/00

    CPC分类号： H01L31/1804 ,  H01L31/0682 ,  H01L31/186 ,  H01L31/1896 ,  Y02E10/547 ,  Y02P70/521

    摘要： A method for producing a single crystal silicon solar cell including the steps of: implanting ions into a single crystal silicon substrate through an ion implanting surface thereof; closely contacting the single crystal silicon substrate and a transparent insulator substrate with each other via a transparent adhesive while using the ion implanting surface as a bonding surface; curing the transparent adhesive; applying an impact to the ion implanted layer to mechanically delaminate the single crystal silicon substrate; forming a plurality of diffusion regions having a second conductivity type at the delaminated surface side of the single crystal silicon layer, such that a plurality of first conductivity-type regions and second conductivity-type regions are present at the delaminated surface of the single crystal silicon layer; forming pluralities of individual electrodes on the pluralities of first and second conductivity-type regions, respectively; and forming collector electrodes for the individual electrodes, respectively.

    摘要翻译： 一种用于制造单晶硅太阳能电池的方法，包括以下步骤：通过其离子注入表面将离子注入单晶硅衬底; 通过透明粘合剂将单晶硅衬底和透明绝缘体衬底彼此紧密接触，同时使用离子注入表面作为结合表面; 固化透明胶; 对离子注入层施加冲击以使单晶硅衬底机械分层; 在单晶硅层的分层表面侧形成具有第二导电类型的多个扩散区域，使得多个第一导电型区域和第二导电类型区域存在于单晶硅的分层表面 层; 在多个第一和第二导电类型区域上分别形成多个单独的电极; 并分别形成各个电极的集电极。