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    Semiconductor wafer, semiconductor wafer manufacturing method, and electronic device
    1.
    发明授权
    Semiconductor wafer, semiconductor wafer manufacturing method, and electronic device 失效
    半导体晶片，半导体晶片制造方法和电子器件

    公开(公告)号：US08716836B2

    公开(公告)日：2014-05-06

    申请号：US12811011

    申请日：2008-12-26

    申请人： Tomoyuki Takada ,  Sadanori Yamanaka ,  Masahiko Hata ,  Taketsugu Yamamoto ,  Kazumi Wada

    发明人： Tomoyuki Takada ,  Sadanori Yamanaka ,  Masahiko Hata ,  Taketsugu Yamamoto ,  Kazumi Wada

    IPC分类号： H01L21/331 ,  H01L29/737

    CPC分类号： H01L21/8258 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02546 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/8252 ,  H01L29/66318

    摘要： A high-quality GaAs-type crystal thin film using an inexpensive Si wafer with good thermal release characteristics is achieved. Provided is a semiconductor wafer comprising an Si wafer; an inhibiting layer that is formed on the wafer and that inhibits crystal growth, the inhibiting layer including a covering region that covers a portion of the wafer and an open region that does not cover a portion of the wafer within the covering region; a Ge layer that is crystal-grown in the open region; and a functional layer that is crystal-grown on the Ge layer. The Ge layer may be formed by annealing with a temperature and duration that enables movement of crystal defects, and the annealing is repeated a plurality of times.

    摘要翻译： 实现了具有良好热释放特性的廉价Si晶片的高质量GaAs型晶体薄膜。 提供了包括Si晶片的半导体晶片; 所述抑制层形成在所述晶片上并且抑制晶体生长，所述抑制层包括覆盖所述晶片的一部分的覆盖区域和不覆盖所述覆盖区域内的所述晶片的一部分的开放区域; 在开放区域晶体生长的Ge层; 以及在Ge层上晶体生长的功能层。 Ge层可以通过使得能够移动晶体缺陷的温度和持续时间退火而形成，并且退火重复多次。

    SEMICONDUCTOR WAFER AND SEMICONDUCTOR WAFER MANUFACTURING METHOD
    2.
    发明申请
    SEMICONDUCTOR WAFER AND SEMICONDUCTOR WAFER MANUFACTURING METHOD 审中-公开
    半导体波导和半导体波形制造方法

    公开(公告)号：US20110006399A1

    公开(公告)日：2011-01-13

    申请号：US12810989

    申请日：2008-12-26

    申请人： Tomoyuki Takada ,  Sadanori Yamanaka ,  Masahiko Hata ,  Taketsugu Yamamoto ,  Kazumi Wada

    发明人： Tomoyuki Takada ,  Sadanori Yamanaka ,  Masahiko Hata ,  Taketsugu Yamamoto ,  Kazumi Wada

    IPC分类号： H01L29/12 ,  H01L21/20

    CPC分类号： H01L21/02516 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02639 ,  H01L29/267 ,  H01L29/7371

    摘要： A high-quality GaAs-type crystal thin film using an inexpensive Si wafer with good thermal release characteristics is achieved. Provided is a semiconductor wafer comprising a single-crystal Si wafer; an insulating layer that has an open region and that is formed on the wafer; a Ge layer that is epitaxially grown on the wafer in the open region; and a GaAs layer that is epitaxially grown on the Ge layer, wherein the Ge layer is formed by (i) placing the wafer in a CVD reaction chamber that can create an ultra-high vacuum low-pressure state, (ii) performing a first epitaxial growth at a first temperature at which raw material gas can thermally decompose, (iii) performing a second epitaxial growth at a second temperature that is higher than the first temperature, (iv) performing a first annealing, at a third temperature that is loss than a melting point of Ge, on epitaxial layers formed by the first and second epitaxial growths, and (v) performing a second annealing at a fourth temperature that is lower than the third temperature. The Ge layer may he formed by repeating the first annealing and the second annealing a plurality of times, and the insulating layer may be a silicon oxide layer.

    摘要翻译： 实现了具有良好热释放特性的廉价Si晶片的高质量GaAs型晶体薄膜。 提供了包括单晶Si晶片的半导体晶片; 绝缘层，其具有开放区域并形成在所述晶片上; 在开放区域中在晶片上外延生长的Ge层; 以及在所述Ge层上外延生长的GaAs层，其中，所述Ge层通过以下方式形成：（i）将所述晶片放置在可产生超高真空低压状态的CVD反应室中，（ii） 在原料气体可以热分解的第一温度下外延生长，（iii）在高于第一温度的第二温度下进行第二外延生长，（iv）在损失的第三温度下进行第一退火 比在第一和第二外延生长形成的外延层上的熔点高的Ge，和（v）在低于第三温度的第四温度下进行第二次退火。 可以通过重复第一退火和第二退火多次形成Ge层，并且绝缘层可以是氧化硅层。

    Method of judging quality of semiconductor epitaxial crystal wafer and wafer manufacturing method using the same
    5.
    发明申请
    Method of judging quality of semiconductor epitaxial crystal wafer and wafer manufacturing method using the same 审中-公开
    判断半导体外延晶体晶片的质量的方法和使用其的晶片制造方法

    公开(公告)号：US20060234400A1

    公开(公告)日：2006-10-19

    申请号：US10546289

    申请日：2004-02-19

    申请人： Masaaki Nakayama ,  Tomoyuki Takada ,  Taketsugu Yamamoto

    发明人： Masaaki Nakayama ,  Tomoyuki Takada ,  Taketsugu Yamamoto

    IPC分类号： H01L21/66 ,  H01L21/44 ,  G01R31/26

    CPC分类号： G01N21/1717

    摘要： In a method of determining the quality of a semiconductor epitaxial crystal wafer having a buffer structure portion comprised of epitaxial layers the semiconductor epitaxial crystal wafer (S) is irradiated with pulsed exciting light (5A) to modulate an internal electric field of the buffer structure portion, the electric transport properties deriving from the crystal quality of the buffer structure of the semiconductor epitaxial crystal wafer (S) are predicted based on a spectral difference in reflectance in reflection probe light (3B) from the semiconductor epitaxial crystal wafer (S), to determine the crystal quality of the buffer structure portion. The crystal quality may also be determined based on electric field strength calculated from Franz-Keldysh oscillation originating in the semiconductor chemical compound of the buffer structure portion.

    摘要翻译： 在确定具有由外延层构成的缓冲结构部分的半导体外延晶体晶片的质量的方法中，半导体外延晶体晶片（S）用脉冲激光（5A）照射以调制缓冲结构的内部电场 基于来自半导体外延晶体晶片（S）的反射探测光（3B）的反射率的光谱差，预测从半导体外延晶体晶片（S）的缓冲结构的晶体质量得到的电输送特性， ，以确定缓冲结构部分的晶体质量。 晶体质量也可以基于源自缓冲结构部分的半导体化合物的Franz-Keldysh振荡计算的电场强度来确定。

    Air battery having an electrode and polymer film
    7.
    发明授权
    Air battery having an electrode and polymer film 有权
    具有电极和聚合物膜的空气电池

    公开(公告)号：US09337519B2

    公开(公告)日：2016-05-10

    申请号：US13391183

    申请日：2010-08-12

    申请人： Takashi Sato ,  Taketsugu Yamamoto

    发明人： Takashi Sato ,  Taketsugu Yamamoto

    IPC分类号： H01M8/22 ,  H01M12/06

    CPC分类号： H01M12/06

    摘要： An air battery containing an electrode and a polymer film, wherein the polymer film is disposed on the air intake side of the electrode, and the polymer film is a film of a polymer comprising a repeating unit represented by the following formula (1), wherein R1, R2, and m are defined in the specification.

    摘要翻译： 一种包含电极和聚合物膜的空气电池，其中聚合物膜设置在电极的进气侧，聚合物膜是包含由下式（1）表示的重复单元的聚合物的膜，其中 R1，R2和m在本说明书中定义。

    SODIUM SECONDARY BATTERY
    8.
    发明申请
    SODIUM SECONDARY BATTERY 有权
    钠二次电池

    公开(公告)号：US20110135990A1

    公开(公告)日：2011-06-09

    申请号：US13056912

    申请日：2009-07-29

    申请人： Taketsugu Yamamoto ,  Hideaki Nakajima ,  Hiroshi Inukai ,  Shigekazu Ohmori ,  Chikara Murakami ,  Daisuke Nakaji ,  Hidekazu Yoshida ,  Maiko Saka

    发明人： Taketsugu Yamamoto ,  Hideaki Nakajima ,  Hiroshi Inukai ,  Shigekazu Ohmori ,  Chikara Murakami ,  Daisuke Nakaji ,  Hidekazu Yoshida ,  Maiko Saka

    IPC分类号： H01M4/583 ,  G01J3/44 ,  G01N23/201 ,  G01N25/20 ,  H01M4/04 ,  H01M2/18

    CPC分类号： H01M4/136 ,  H01M4/58 ,  H01M4/587 ,  H01M10/0569 ,  Y10T29/49108

    摘要： Disclosed is a sodium secondary battery. The sodium secondary battery comprises a first electrode and a second electrode comprising a carbonaceous material. The carbonaceous material satisfies one or more requirements selected from the group consisting of requirements 1, 2, 3 and 4. Requirement 1: R value (=ID/IG) obtained by Raman spectroscopic measurement is 1.07 to 3. Requirement 2: A value and σA value obtained by small angle X-ray scattering measurement are −0.5 to 0 and 0 to 0.010, respectively. Requirement 3: for an electrode comprising an electrode mixture obtained by mixing 85 parts by weight of the carbonaceous material with 15 parts by weight of poly(vinylidene fluoride), the carbonaceous material in the electrode after being doped and dedoped with sodium ions is substantially free from pores having a size of not less than 10 nm. Requirement 4: Q1 value obtained by a calorimetric differential thermal analysis is not more than 800 joules/g.

    摘要翻译： 公开了钠二次电池。 钠二次电池包括第一电极和包含碳质材料的第二电极。 碳质材料满足从要求1,2,3和4所选择的一个或多个要求。要求1：通过拉曼光谱测量获得的R值（= ID / IG）为1.07至3.要求2：A值和 ＆sgr。通过小角度X射线散射测量获得的值分别为-0.5至0和0至0.010。 要求3：对于包含通过将85重量份的碳质材料与15重量份的聚（偏二氟乙烯）混合而获得的电极混合物的电极，掺杂并掺杂了钠离子的电极中的碳质材料基本上不含 来自具有不小于10nm的尺寸的孔。 要求4：通过量热差热分析获得的Q1值不超过800焦耳/ g。

    POWDER FOR POSITIVE ELECTRODE ACTIVE MATERIAL, POSITIVE ACTIVE ELECTRODE ACTIVE MATERIAL, AND SODIUM SECONDARY BATTERY
    9.
    发明申请
    POWDER FOR POSITIVE ELECTRODE ACTIVE MATERIAL, POSITIVE ACTIVE ELECTRODE ACTIVE MATERIAL, AND SODIUM SECONDARY BATTERY 有权
    活性电极活性材料，阳极活性电极活性材料和钠二次电池用粉末

    公开(公告)号：US20110008668A1

    公开(公告)日：2011-01-13

    申请号：US12866148

    申请日：2009-02-03

    申请人： Masami Makidera ,  Taketsugu Yamamoto

    发明人： Masami Makidera ,  Taketsugu Yamamoto

    IPC分类号： H01M4/50 ,  H01B1/02 ,  H01M4/52 ,  H01M2/14

    CPC分类号： H01M2/1653 ,  H01M4/505 ,  H01M4/525 ,  H01M10/056 ,  Y10T428/2982

    摘要： The present invention provides a positive electrode active material that can suppress the necessity of performing sieving and is suitable for use in secondary batteries, particularly sodium secondary batteries. Also provided is a powder for a positive electrode active material as a raw material for the positive electrode active material. The powder for a positive electrode active material of the present invention comprises Mn-containing particles. In the cumulative particle size distribution on the volume basis of particles constituting the powder, D50, which is the particle diameter at a 50% cumulation measured from the smallest particle, is in the range of from 0.1 μm to 10 μm, and 90 vol % or more of the particles constituting the powder are in the range of from 0.3 times to 3 times D50. The powder for a positive electrode active material comprises Mn-containing particles, and 90 vol % or more of the particles constituting the powder are in the range of from 0.6 μm to 6 μm. The positive electrode active material is a powdery positive electrode active material obtained by calcining a mixture of the powder for positive electrode active material and a sodium compound. The positive electrode for sodium rechargeable batteries comprises the positive electrode active material.

    摘要翻译： 本发明提供能够抑制进行筛分的必要性的正极活性物质，适用于二次电池，特别是钠二次电池。 还提供了作为正极活性物质的原料的正极活性物质的粉末。 本发明的正极活性物质用粉末含有Mn粒子。 在构成粉末的粒子的体积基础上的累积粒度分布中，从最小粒子测定的50％累积时的粒径D50为0.1μm〜10μm，90体积％ 或更多的构成粉末的颗粒在D50的0.3倍至3倍的范围内。 用于正极活性物质的粉末包含含Mn颗粒，并且构成粉末的颗粒的90体积％以上在0.6μm至6μm的范围内。 正极活性物质是通过煅烧正极活性物质粉末和钠化合物的混合物而获得的粉末状正极活性物质。 钠可充电电池用正极包含正极活性物质。