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    Surface-treated steel sheet
    9.
    发明授权
    Surface-treated steel sheet 失效
    表面处理钢板

    公开(公告)号：US07875363B2

    公开(公告)日：2011-01-25

    申请号：US11991867

    申请日：2006-11-28

    申请人： Kazuhisa Okai ,  Etsuo Hamada ,  Syuji Nomura

    发明人： Kazuhisa Okai ,  Etsuo Hamada ,  Syuji Nomura

    IPC分类号： B05D3/00 ,  B05D3/02 ,  B32B15/08 ,  B32B15/095 ,  B32B15/18

    CPC分类号： C23C22/44 ,  C09D5/084 ,  C09D7/45 ,  Y10T428/12569 ,  Y10T428/12799 ,  Y10T428/265

    摘要： A surface-treated galvanized steel sheet includes a steel sheet, a zinc coating disposed on the steel sheet, and a film disposed on the zinc coating. The film has a thickness in the range of 0.01 to 3 μm and contains certain amounts of resin compound having a particular chemical structure, cationic urethane resin, vanadium compound, zirconium compound, compound having a phosphate group, and acid compound. The surface-treated galvanized steel sheet contains no hexavalent chromium in the film and is excellent in terms of corrosion resistance, alkali resistance, and solvent resistance.

    摘要翻译： 表面处理的镀锌钢板包括钢板，设置在钢板上的锌涂层和设置在锌涂层上的膜。 膜的厚度为0.01〜3μm，含有一定量的具有特定化学结构的树脂化合物，阳离子聚氨酯树脂，钒化合物，锆化合物，具有磷酸基的化合物和酸化合物。 表面处理镀锌钢板在膜中不含六价铬，在耐腐蚀性，耐碱性和耐溶剂性方面优异。

    Method for manufacturing semiconductor device
    10.
    发明授权
    Method for manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US08900962B2

    公开(公告)日：2014-12-02

    申请号：US13052309

    申请日：2011-03-21

    申请人： Daisuke Yamashita ,  Etsuo Hamada ,  Hideki Nozaki ,  Hironobu Shibata

    发明人： Daisuke Yamashita ,  Etsuo Hamada ,  Hideki Nozaki ,  Hironobu Shibata

    IPC分类号： H01L21/331 ,  H01L29/66 ,  H01L21/268 ,  H01L29/739 ,  H01L29/08 ,  H01L21/266 ,  H01L21/265

    CPC分类号： H01L29/66333 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/268 ,  H01L29/0834 ,  H01L29/7395

    摘要： According to one embodiment, a method is disclosed for manufacturing a semiconductor device. The method can include forming a base region and an emitter region in a front surface of a semiconductor layer. The method can include forming a first impurity implantation region by implanting first impurity of a first conductivity type into a back surface of the semiconductor layer. The method can include selectively forming a second impurity implantation region by selectively implanting second impurity of a second conductivity type into the first impurity implantation region. In addition, the method can include irradiating the first impurity implantation region and the second impurity implantation region with laser light. A peak of impurity concentration profile in a depth direction of at least one of the first impurity implantation region and the second impurity implantation region before irradiation with the laser light is adjusted to a depth of 0.05 μm or more and 0.3 μm or less from the back surface of the semiconductor layer.

    摘要翻译： 根据一个实施例，公开了一种用于制造半导体器件的方法。 该方法可以包括在半导体层的前表面中形成基极区域和发射极区域。 该方法可以包括通过将第一导电类型的第一杂质注入半导体层的后表面来形成第一杂质注入区。 该方法可以包括通过将第二导电类型的第二杂质选择性地注入到第一杂质注入区域中来选择性地形成第二杂质注入区域。 此外，该方法可以包括用激光照射第一杂质注入区域和第二杂质注入区域。 将激光照射前的第一杂质注入区域和第二杂质注入区域中的至少一个的深度方向的杂质浓度分布的峰值从背面调整为0.05μm以上且0.3μm以下的深度 半导体层的表面。