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    Oxide superconductor cabling and method of manufacturing oxide superconductor cabling
    3.
    发明授权
    Oxide superconductor cabling and method of manufacturing oxide superconductor cabling 有权
    氧化物超导体布线及其制造方法

    公开(公告)号：US08965469B2

    公开(公告)日：2015-02-24

    申请号：US13578344

    申请日：2011-02-10

    申请人： Tatsuhisa Nakanishi ,  Yuji Aoki ,  Tsutomu Koizumi ,  Atsushi Kaneko ,  Takayo Hasegawa

    发明人： Tatsuhisa Nakanishi ,  Yuji Aoki ,  Tsutomu Koizumi ,  Atsushi Kaneko ,  Takayo Hasegawa

    IPC分类号： H01B12/06 ,  H01L39/24 ,  H01B13/00 ,  H01B12/02

    CPC分类号： H01B12/02 ,  H01B13/00 ,  H01L39/2461 ,  Y10S505/704 ,  Y10T29/49014

    摘要： Disclosed are an oxide superconductor tape and a method of manufacturing the oxide superconductor tape capable of improving the length and characteristics of superconductor tape and obtaining stabilized characteristics across the entire length thereof. A Y-class superconductor tape (10), as an oxide superconductor tape, comprises a tape (13) further comprising a tape-shaped non-oriented metallic substrate (11), and a first buffer layer (sheet layer) (12) that is formed by IBAD upon the tape-shaped non-oriented metallic substrate (11); and a second buffer layer (gap layer) (14), further comprising a lateral face portion (14a) that is extended to the lateral faces of the first buffer layer (sheet layer) (12) upon the tape (13) by RTR RF-magnetron sputtering.

    摘要翻译： 公开了氧化物超导体带和制造氧化物超导体带的方法，其能够改善超导体带的长度和特性并且在其整个长度上获得稳定的特性。 作为氧化物超导体带的Y级超导体带（10）包括进一步包括带状非取向金属基板（11）的带（13）和第一缓冲层（片层）（12），所述第一缓冲层 由IBAD形成在带状非取向金属基板（11）上; 以及第二缓冲层（间隙层）（14），还包括侧面部分（14a），其通过RTR RF延伸到所述带（13）上的所述第一缓冲层（片层）（12）的侧面 磁控溅射。

    Monitoring system, device, monitoring method, and monitoring program
    4.
    发明授权
    Monitoring system, device, monitoring method, and monitoring program 有权
    监控系统，设备，监控方法和监控程序

    公开(公告)号：US08836466B2

    公开(公告)日：2014-09-16

    申请号：US13193754

    申请日：2011-07-29

    申请人： Yutaka Itou ,  Makoto Ikeyama ,  Yasushi Nakagawa ,  Yuji Aoki ,  Atsushi Kaneko

    发明人： Yutaka Itou ,  Makoto Ikeyama ,  Yasushi Nakagawa ,  Yuji Aoki ,  Atsushi Kaneko

    IPC分类号： G05B23/02 ,  H04L27/00 ,  G06F15/16 ,  H04L12/24

    CPC分类号： H04L41/0686 ,  H04L41/069

    摘要： In a monitoring system, a first device among devices includes a generating unit that generates third data indicating a string of an identical section when strings each indicated in first data and second data acquired through communications with the devices are identical to each other by a predetermined proportion or more, and a first transmitting unit that transmits the third data generated by the generating unit and information for identifying the third data to a second device included in the devices. The second device includes a second transmitting unit that transmits, when a string indicated in fourth data to be transmitted to the first device includes the string indicated in the third data, fifth data indicating a string obtained by excluding the string indicated in the third data from the string indicated in the fourth data, and the information for identifying the third data to the first device.

    摘要翻译： 在监视系统中，设备之间的第一设备包括：生成单元，其生成表示第一数据中指示的字符串的相同部分的串的第三数据，并且通过与所述设备的通信获取的第二数据以预定比例彼此相同 以及第一发送单元，其将由生成单元生成的第三数据和用于识别第三数据的信息发送到包括在设备中的第二设备。 第二装置包括：第二发送单元，当要发送到第一装置的第四数据中指示的串包括第三数据中指示的串时，发送第五数据，指示通过将第三数据中指示的串排除的字符串 第四数据中指示的字符串，以及用于识别第一数据的信息。

    Semiconductor device
    5.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08415740B2

    公开(公告)日：2013-04-09

    申请号：US13358526

    申请日：2012-01-26

    申请人： Atsushi Kaneko

    发明人： Atsushi Kaneko

    IPC分类号： H01L29/66 ,  H01L29/78

    CPC分类号： H01L29/7813 ,  H01L21/26586 ,  H01L29/0696 ,  H01L29/0869 ,  H01L29/1095 ,  H01L29/66734

    摘要： Provided is a method of manufacturing a semiconductor device, that buried gate electrodes are formed in a pair of trenches in a substrate, so as to be recessed from the level of the top end of the trenches, a base region is formed between a predetermined region located between the pair of trenches, and a source region is formed over the base region.

    摘要翻译： 提供了一种制造半导体器件的方法，其中掩埋栅电极形成在衬底中的一对沟槽中，以便从沟槽的顶端的水平面凹陷，在预定区域 位于所述一对沟槽之间，并且在所述基底区域上形成源极区域。

    Semiconductor device and method of manufacturing the same
    6.
    发明授权
    Semiconductor device and method of manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US08133785B2

    公开(公告)日：2012-03-13

    申请号：US12621711

    申请日：2009-11-19

    申请人： Atsushi Kaneko

    发明人： Atsushi Kaneko

    IPC分类号： H01L21/336 ,  H01L21/40

    CPC分类号： H01L29/7813 ,  H01L21/26586 ,  H01L29/0696 ,  H01L29/0869 ,  H01L29/1095 ,  H01L29/66734

    摘要： Provided is a method of manufacturing a semiconductor device, that buried gate electrodes are formed in a pair of trenches in a substrate, so as to be recessed from the level of the top end of the trenches, a base region is formed between a predetermined region located between the pair of trenches, and a source region is formed over the base region.

    摘要翻译： 提供了一种制造半导体器件的方法，其中掩埋栅电极形成在衬底中的一对沟槽中，以便从沟槽的顶端的水平面凹陷，在预定区域 位于所述一对沟槽之间，并且在所述基底区域上形成源极区域。

    Omnidirectional antenna for indoor and outdoor use
    7.
    发明授权
    Omnidirectional antenna for indoor and outdoor use 失效
    全方位天线用于室内和室外使用

    公开(公告)号：US08094084B2

    公开(公告)日：2012-01-10

    申请号：US11994190

    申请日：2006-03-15

    申请人： Atsushi Kaneko ,  Shuji Hagiwara

    发明人： Atsushi Kaneko ,  Shuji Hagiwara

    IPC分类号： H01Q9/26 ,  H01Q1/42

    CPC分类号： H01Q9/285 ,  H01Q1/42

    摘要： A plate-shaped radiating element of a shape having at least three planes is formed by bending a metal plate having a substantially rectangular shape. A first slit is provided from a lower edge of the plate-shaped radiating element up to a portion in the vicinity of an upper edge of the plate-shaped radiating element while passing through a center point of the plate-shaped radiating element, and forms plate-shaped dipole elements on both sides thereof. A second slit is provided parallel to the upper edge of the plate-shaped radiating element and forms a folded element on an upper side thereof. Feeding points are provided on both sides of the first slit at the lower edge of the plate-shaped radiating element.

    摘要翻译： 通过弯曲具有大致矩形形状的金属板，形成具有至少三个平面的形状的板状辐射元件。 第一狭缝从板状辐射元件的下边缘提供到板状辐射元件的上边缘附近的一部分，同时穿过板状辐射元件的中心点，并形成 两侧板状偶极子元件。 第二狭缝平行于板状辐射元件的上边缘设置，并在其上侧形成折叠元件。 在板状辐射元件的下边缘处的第一狭缝的两侧设置有进给点。

    Semiconductor device and manufacturing method for semiconductor device
    9.
    发明授权
    Semiconductor device and manufacturing method for semiconductor device 有权
    半导体装置及半导体装置的制造方法

    公开(公告)号：US07652327B2

    公开(公告)日：2010-01-26

    申请号：US11365871

    申请日：2006-03-02

    申请人： Atsushi Kaneko

    发明人： Atsushi Kaneko

    IPC分类号： H01L29/94

    CPC分类号： H01L29/7813 ,  H01L21/26533 ,  H01L29/0653 ,  H01L29/66734

    摘要： To provide a semiconductor device capable of reducing a gate capacitance, and preventing breakdown of a gate oxide film if a large amount of current flows. A semiconductor device according to an embodiment of the present invention includes: an epitaxial layer; a channel region formed on the epitaxial layer; a trench extending from a surface of the channel region to the epitaxial layer; a gate oxide film that covers an inner surface of the trench; a gate electrode filled into the trench; and a buried insulating film formed below the gate electrode and away from the gate oxide film.

    摘要翻译： 提供能够减小栅极电容的半导体器件，并且如果大量的电流流动，则防止栅极氧化膜的击穿。 根据本发明实施例的半导体器件包括：外延层; 形成在所述外延层上的沟道区; 从沟道区的表面延伸到外延层的沟槽; 覆盖所述沟槽的内表面的栅极氧化膜; 填充到沟槽中的栅电极; 以及形成在栅电极下方并远离栅氧化膜的掩埋绝缘膜。

    ANTENNA
    10.
    发明申请
    ANTENNA 失效
    天线

    公开(公告)号：US20090121957A1

    公开(公告)日：2009-05-14

    申请号：US11994190

    申请日：2006-03-15

    申请人： Atsushi Kaneko ,  Shuji Hagiwara

    发明人： Atsushi Kaneko ,  Shuji Hagiwara

    IPC分类号： H01Q9/16 ,  H01Q1/42

    CPC分类号： H01Q9/285 ,  H01Q1/42

    摘要： A plate-shaped radiating element of a shape having at least three planes is formed by bending a metal plate having a substantially rectangular shape. A first slit is provided from a lower edge of the plate-shaped radiating element up to a portion in the vicinity of an upper edge of the plate-shaped radiating element while passing through a center point of the plate-shaped radiating element, and forms plate-shaped dipole elements on both sides thereof. A second slit is provided parallel to the upper edge of the plate-shaped radiating element and forms a folded element on an upper side thereof. Feeding points are provided on both sides of the first slit at the lower edge of the plate-shaped radiating element.

    摘要翻译： 通过弯曲具有大致矩形形状的金属板，形成具有至少三个平面的形状的板状辐射元件。 第一狭缝从板状辐射元件的下边缘提供到板状辐射元件的上边缘附近的一部分，同时穿过板状辐射元件的中心点，并形成 两侧板状偶极子元件。 第二狭缝平行于板状辐射元件的上边缘设置，并在其上侧形成折叠元件。 在板状辐射元件的下边缘处的第一狭缝的两侧设置有进给点。