公开(公告)号：US07847186B2

公开(公告)日：2010-12-07

申请号：US10563009

申请日：2004-07-12

申请人： Toru Sawada ,  Yohei Koi ,  Toshiaki Sasaki ,  Masashi Yoshimi ,  Masahiro Goto ,  Kenji Yamamoto

发明人： Toru Sawada ,  Yohei Koi ,  Toshiaki Sasaki ,  Masashi Yoshimi ,  Masahiro Goto ,  Kenji Yamamoto

IPC分类号： H01L31/00

CPC分类号： H01L31/077 ,  H01L31/056 ,  H01L31/075 ,  H01L31/076 ,  Y02E10/52 ,  Y02E10/548

摘要： According to the present invention, sufficient light trapping effect can be exhibited and series resistance can be kept small, by sequentially forming a silicon based low refractive index layer and a thin silicon based interface layer on a backside of a photoelectric conversion layer observed from a light incident side, and as a result a silicon based thin film solar cell may be provided efficiently and at low cost.

摘要翻译： 根据本发明，通过从光线观察到的光电转换层的背面顺序地形成硅基低折射率层和薄硅基界面层，可以发挥足够的光捕获效果并且串联电阻较小 因此，可以以低成本有效地提供硅基薄膜太阳能电池。

公开(公告)号：US07550665B2

公开(公告)日：2009-06-23

申请号：US10530283

申请日：2004-07-15

申请人： Toshiaki Sasaki ,  Yohei Koi ,  Kenji Yamamoto ,  Masashi Yoshimi ,  Mitsuru Ichikawa

发明人： Toshiaki Sasaki ,  Yohei Koi ,  Kenji Yamamoto ,  Masashi Yoshimi ,  Mitsuru Ichikawa

IPC分类号： H01L31/00 ,  H02N6/00

CPC分类号： H01L31/077 ,  H01L31/056 ,  H01L31/076 ,  Y02E10/52 ,  Y02E10/548

摘要： In a stacked-layer type photoelectric conversion device, a plurality of photoelectric conversion units are stacked on a substrate, each of which includes a one conductivity-type layer, a photoelectric conversion layer of substantially intrinsic semiconductor and an opposite conductivity-type layer in this order from a light-incident side. At least one of the opposite conductivity-type layer in a front photoelectric conversion unit arranged relatively closer to the light-incident side and the one conductivity-type layer in a back photoelectric conversion unit arranged adjacent to the front photoelectric conversion unit includes a silicon composite layer at least in a part thereof. The silicon composite layer has a thickness of more than 20 nm and less than 130 nm and an oxygen concentration of more than 25 atomic % and less than 60 atomic %, and includes silicon-rich phase parts in an amorphous alloy phase of silicon and oxygen.

摘要翻译： 在堆叠层型光电转换装置中，在基板上层叠多个光电转换单元，每个基板包括一个导电型层，本质上为半导体的光电转换层和相反的导电型层 从光线一方的命令。 在与前光电转换单元相邻布置的背光电转换单元中相对靠近光入射侧的前光电转换单元中的至少一个导电类型层和一个导电型层中的至少一个包括硅复合物 至少在其一部分。 硅复合层的厚度大于20nm且小于130nm，氧浓度大于25原子％且小于60原子％，并且包括在硅和氧的非晶合金相中的富硅相部分 。

公开(公告)号：US20060043517A1

公开(公告)日：2006-03-02

申请号：US10530283

申请日：2004-07-15

申请人： Toshiaki Sasaki ,  Yohei Koi ,  Kenji Yamamoto ,  Masashi Yoshimi ,  Mitsuru Ichikawa

发明人： Toshiaki Sasaki ,  Yohei Koi ,  Kenji Yamamoto ,  Masashi Yoshimi ,  Mitsuru Ichikawa

IPC分类号： H01L31/105

CPC分类号： H01L31/077 ,  H01L31/056 ,  H01L31/076 ,  Y02E10/52 ,  Y02E10/548

摘要： In a stacked-layer type photoelectric conversion device, a plurality of photoelectric conversion units are stacked on a substrate, each of which includes a one conductivity-type layer, a photoelectric conversion layer of substantially intrinsic semiconductor and an opposite conductivity-type layer in this order from a light-incident side. At least one of the opposite conductivity-type layer in a front photoelectric conversion unit arranged relatively closer to the light-incident side and the one conductivity-type layer in a back photoelectric conversion unit arranged adjacent to the front photoelectric conversion unit includes a silicon composite layer at least in a part thereof. The silicon composite layer has a thickness of more than 20 nm and less than 130 nm and an oxygen concentration of more than 25 atomic % and less than 60 atomic %, and includes silicon-rich phase parts in an amorphous alloy phase of silicon and oxygen.

公开(公告)号：US20070169805A1

公开(公告)日：2007-07-26

申请号：US10588708

申请日：2005-03-15

申请人： Toshiaki Sasaki ,  Yohei Koi ,  Yuko Tawada ,  Kenji Yamamoto

发明人： Toshiaki Sasaki ,  Yohei Koi ,  Yuko Tawada ,  Kenji Yamamoto

IPC分类号： H01L31/00

CPC分类号： H01L31/03921 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/1884 ,  Y02E10/50

摘要： An inexpensive substrate for thin film solar cells having improved performance of a thin film solar cell, and a manufacturing method thereof are provided by increasing light trapping effect due to effective increase in unevenness of a substrate for thin film solar cells. Furthermore, a thin film solar cell having improved performance using the substrate is provided. A substrate for thin film solar cells of the present invention has a transparent insulating substrate and a transparent electrode layer deposited thereon including at least zinc oxide (ZnO), the transparent insulating substrate has a fine surface unevenness having a root-mean-square deviation of the surface (RMS) 5 to 50 nm in an interface by a side of the transparent electrode layer, a projected area thereof consists of a curved surface, and furthermore a haze ratio or a ratio of a diffuse transmittance to a total transmittance as an index of unevenness of a substrate may be set at not less than 20% measured using a C light source. And thereby light trapping effect may effectively occur to improve performance of the thin film solar cell.

摘要翻译： 通过提高薄膜太阳能电池基板的不均匀性的增加的光捕获效果，提供薄膜太阳能电池的性能提高的薄膜太阳能电池的便宜的基板，及其制造方法。 此外，提供了使用该基板具有改进的性能的薄膜太阳能电池。 本发明的薄膜太阳能电池用基板具有透明绝缘性基板和至少含有氧化锌（ZnO）的淀积的透明电极层，透明绝缘性基板具有平均值偏差为 通过透明电极层的一侧的界面中的5〜50nm的面（RMS），其投影面积由曲面构成，此外，雾度比或漫透射率与总透射率的比率为指标 可以将基板的不平坦度设定为使用C光源测量的不小于20％。 从而可以有效地发生光捕获效应，以改善薄膜太阳能电池的性能。

公开(公告)号：US07781668B2

公开(公告)日：2010-08-24

申请号：US10588708

申请日：2005-03-15

申请人： Toshiaki Sasaki ,  Yohei Koi ,  Yuko Tawada ,  Kenji Yamamoto

发明人： Toshiaki Sasaki ,  Yohei Koi ,  Yuko Tawada ,  Kenji Yamamoto

IPC分类号： H01L25/00

CPC分类号： H01L31/03921 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/1884 ,  Y02E10/50

摘要： An inexpensive substrate for thin film solar cells having improved performance of a thin film solar cell, and a manufacturing method thereof are provided by increasing light trapping effect due to effective increase in unevenness of a substrate for thin film solar cells. Furthermore, a thin film solar cell having improved performance using the substrate is provided. A substrate for thin film solar cells of the present invention has a transparent insulating substrate and a transparent electrode layer deposited thereon including at least zinc oxide (ZnO), the transparent insulating substrate has a fine surface unevenness having a root-mean-square deviation of the surface (RMS) 5 to 50 nm in an interface by a side of the transparent electrode layer, a projected area thereof consists of a curved surface, and furthermore a haze ratio or a ratio of a diffuse transmittance to a total transmittance as an index of unevenness of a substrate may be set at not less than 20% measured using a C light source. And thereby light trapping effect may effectively occur to improve performance of the thin film solar cell.

摘要翻译： 通过提高薄膜太阳能电池基板的不均匀性的增加的光捕获效果，提供薄膜太阳能电池的性能提高的薄膜太阳能电池的便宜的基板，及其制造方法。 此外，提供了使用该基板具有改进的性能的薄膜太阳能电池。 本发明的薄膜太阳能电池用基板具有透明绝缘性基板和至少含有氧化锌（ZnO）的淀积的透明电极层，透明绝缘性基板具有平均值偏差为 通过透明电极层的一侧的界面中的5〜50nm的面（RMS），其投影面积由曲面构成，此外，雾度比或漫透射率与总透射率的比率为指标 可以将基板的不平坦度设定为使用C光源测量的不小于20％。 从而可以有效地发生光捕获效应，以改善薄膜太阳能电池的性能。

公开(公告)号：US20080185036A1

公开(公告)日：2008-08-07

申请号：US11791754

申请日：2005-11-09

申请人： Toshiaki Sasaki ,  Yohei Koi ,  Yuko Tawada ,  Takashi Suezaki ,  Kenji Yamamoto

发明人： Toshiaki Sasaki ,  Yohei Koi ,  Yuko Tawada ,  Takashi Suezaki ,  Kenji Yamamoto

IPC分类号： H01L31/04

CPC分类号： H01L31/076 ,  H01L31/02168 ,  H01L31/03529 ,  H01L31/0392 ,  Y02E10/548

摘要： An object of the present invention is to provide a substrate for a thin film photoelectric conversion device, in which its properties are not deteriorated when its surface unevenness is effectively increased, and then provide the thin film photoelectric conversion device having its performance improved by using the substrate.According to the present invention, by setting the surface area ratio of a transparent electrode layer in the substrate for the thin film photoelectric conversion device to at least 55% and at most 95%, the surface unevenness are effectively increased to increase the optical confinement effect, while deterioration in properties due to sharpening of the surface level variation is suppressed, whereby making it possible to provide a substrate for a thin film photoelectric conversion device, which can enhance output properties of the thin film photoelectric conversion device.

摘要翻译： 本发明的目的是提供一种用于薄膜光电转换装置的基板，其特征在其表面不均匀性有效提高时不劣化，然后提供其性能得到改善的薄膜光电转换装置 基质。 根据本发明，通过将薄膜光电转换元件用基板中的透明电极层的表面积比设定为至少55％以上且95％以下，能够有效地增加表面不均匀性，提高光学限制效果 ，同时由于表面水平变化的锐化而导致的性能劣化被抑制，从而可以提供可以提高薄膜光电转换装置的输出特性的薄膜光电转换装置用基板。