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76 条记录 (耗时 0.019 秒)

    High frequency switching circuit
    2.
    发明授权
    High frequency switching circuit 失效
    高频开关电路

    公开(公告)号：US4424459A

    公开(公告)日：1984-01-03

    申请号：US390888

    申请日：1982-06-22

    申请人： Koichiro Inomata ,  Michio Hasegawa ,  Toshihiro Onodera

    发明人： Koichiro Inomata ,  Michio Hasegawa ,  Toshihiro Onodera

    IPC分类号： G05F1/32 ,  C22C45/02 ,  C22C45/04 ,  H01F1/153 ,  H02M3/28 ,  H02M3/335 ,  H02M3/337 ,  G11C13/02

    CPC分类号： H02M3/3372 ,  H02M3/33538

    摘要： A high frequency switching circuit comprised of a single-ended switching circuit, rectifying-smoothing circuit and magnetic amplifier which is connected between said single-ended switching circuit and rectifying-smoothing circuit. The magnetic amplifier includes a saturable reactor which has a coercive force Hc of 0.6 Oe or above and a rectangular ratio Br/Bs of 80% or below at an operating frequency of 20 kHz. The saturable reactor is prepared from an amorphous magnetic alloy having a composition of (Co.sub.1-a-b-c Fe.sub.a Ni.sub.b M.sub.c).sub.1-d X.sub.d where: M=one element selected from a group consisting of the elements of Nb, Cr, Mo, V, Ta, Ti, Zr and W X=B or a compound of B and Si in which the content of Si is set at 25 atomic % or less 0.04.ltoreq.a.ltoreq.0.15 0.ltoreq.b.ltoreq.0.10 0.005.ltoreq.c.ltoreq.0.10 0.15.ltoreq.d.ltoreq.0.30.

    摘要翻译： 一种由单端开关电路，整流平滑电路和连接在所述单端开关电路与整流平滑电路之间的磁放大器组成的高频开关电路。 磁放大器包括在20kHz的工作频率下具有0.6Oe以上的矫顽力Hc和80％以下的矩形比率Br / Bs的可饱和电抗器。 饱和反应器由具有（Co1-abc Fea Nib Mc）1-d Xd组成的非晶磁性合金制备，其中：M =选自Nb，Cr，Mo，V，Ta元素中的一种元素 ，Ti，Zr和WX = B或其中Si的含量设定在25原子％以下的B和Si的化合物0.04

    Amorphous alloy of high magnetic permeability
    3.
    发明授权
    Amorphous alloy of high magnetic permeability 失效
    非晶合金的磁导率高

    公开(公告)号：US4225339A

    公开(公告)日：1980-09-30

    申请号：US969960

    申请日：1978-12-15

    申请人： Koichiro Inomata ,  Senji Shimanuki ,  Michio Hasegawa

    发明人： Koichiro Inomata ,  Senji Shimanuki ,  Michio Hasegawa

    IPC分类号： C22C45/00 ,  H01F1/153 ,  C22C38/10 ,  C22C38/12

    CPC分类号： H01F1/153 ,  C22C45/008

    摘要： An amorphous alloy of high magnetic permeability, having a general formula;(T.sub.y Nb.sub.x A.sub.1-x-y).sub.100-z X.sub.zwhere,"A" is at least one kind selected from the group consisting of 0.5 to 10 atomic % of V, Ta, Ti, Zr, Cr, Mo, W and 0.5 to 30 atomic % of Ni based on the total amount of T, Nb and A,"T" is at least one element selected from the group of Fe and Co,"X" is B or B+Si, the amount of Si being at most 25 atomic % based on the total amount of the alloy,"x" ranges between 0.005 and 0.1,"y" ranges between 0.5 and 0.99, and"z" ranges between 15 and 35, with the proviso of 0.005.ltoreq.1-x-y.ltoreq.0.4.

    摘要翻译： 具有高通透性的非晶合金，具有通式; （TyNbxA1-xy）100-zXz其中，“A”为选自V，Ta，Ti，Zr，Cr，Mo，W的0.5〜10原子％，V为0.5〜30原子％ Ni基于T，Nb和A的总量，“T”为选自Fe和Co中的至少一种元素，“X”为B或B + Si，Si的量为至多25原子％ 基于合金的总量，“x”在0.005和0.1之间，“y”在0.5和0.99之间，“z”在15和35之间，条件是0.005 = 0.4。

    Low-loss amorphous alloy
    4.
    发明授权
    Low-loss amorphous alloy 失效
    低损失非晶合金

    公开(公告)号：US4462826A

    公开(公告)日：1984-07-31

    申请号：US415489

    申请日：1982-09-07

    申请人： Koichiro Inomata ,  Michio Hasegawa ,  Tadahiko Kobayashi

    发明人： Koichiro Inomata ,  Michio Hasegawa ,  Tadahiko Kobayashi

    IPC分类号： C22C45/02 ,  F16H29/10

    CPC分类号： C22C45/02

    摘要： There is disclosed a low-loss amorphous alloy represented by the following formula:(Fe.sub.1-a-b Nb.sub.a M.sub.b).sub.100-c X.sub.cwherein M is at least one metallic element selected from the group consisting of V, Cr, Mo, Ta and W; X is B or a combination of B and Si (the amount of the Si is 10 or less atomic percent of its formula weight); and a, b and c satisfy the relation of 0.01.ltoreq.a.ltoreq.0.075, 0.ltoreq.b.ltoreq.0.05, 0.02.ltoreq.a+b.ltoreq.0.075, and 12.ltoreq.c.ltoreq.21, respectively.The amorphous alloys of the present invention exhibit larger saturation magnetic flux densities and less iron losses than the conventional ferrite at a high frequency region.

    摘要翻译： 公开了由下式表示的低损失非晶合金：（Fe1-a-bNbaMb）100-cXc其中M是选自V，Cr，Mo，Ta和W中的至少一种金属元素; X是B或B和Si的组合（Si的量为其配方重量的原子百分数为10以下）; 并且a，b和c满足0.01≤n≤0.075,0≤b≤0.05,0.02≤b≤0.075和12≤n≤0.075的关系。 21。 本发明的非晶合金在高频区域表现出比常规铁氧体更大的饱和磁通密度和较少的铁损。

    Amorphous alloy for magnetic core material
    5.
    发明授权
    Amorphous alloy for magnetic core material 失效
    非晶合金磁芯材料

    公开(公告)号：US4473417A

    公开(公告)日：1984-09-25

    申请号：US405720

    申请日：1982-08-06

    申请人： Koichiro Inomata ,  Michio Hasegawa ,  Masakatsu Haga ,  Takao Sawa

    发明人： Koichiro Inomata ,  Michio Hasegawa ,  Masakatsu Haga ,  Takao Sawa

    IPC分类号： C22C19/07 ,  C22C45/04 ,  H01F1/14 ,  H01F1/153

    CPC分类号： H01F1/15316 ,  C22C45/04 ,  Y10T428/12431

    摘要： There is disclosed an amorphous alloy for a magnetic core material represented by the formula(Co.sub.1-x.sbsb.1.sub.-x.sbsb.2 Fe.sub.x.sbsb.1 M.sub.x.sbsb.2).sub.x.sbsb.3 B.sub.x.sbsb.4 Si.sub.100-x.sbsb.3.sub.-x.sbsb.4wherein M is at least one element selected from the group consisting of Ti, V, Cr, Mn, Ni, Zr, Nb, Mo, Ru, Hf, Ta, W and Re, and x.sub.1, x.sub.2, x.sub.3 and x.sub.4 are numbers which satisfy relations of 0.ltoreq.x.sub.1 .ltoreq.0.10, 0.ltoreq.x.sub.2 .ltoreq.0.10, 70.ltoreq.x.sub.3 .ltoreq.79 and 5.ltoreq.x.sub.4 .ltoreq.9, respectively.According to the present invention, it could be provided an amorphous alloy suitable for a magnetic core material of a magnetic amplifier in which its coercive force is as low as 0.4 oersted or less at a high frequency of 20 KHz or more, particularly even at 50 KHz, and its rectangular ratio is as much as 85% or more.

    摘要翻译： 公开了一种用于由式（Co1-x1-x2Fex1Mx2）x3Bx4Si100-x3-x4表示的磁芯材料的非晶合金，其中M是选自Ti，V，Cr，Mn，Ni， Zr，Nb，Mo，Ru，Hf，Ta，W和Re，x1，x2，x3和x4是满足关系式0 = x1 <0.10，0

    Rolled core
    6.
    发明授权
    Rolled core 失效
    卷芯

    公开(公告)号：US4368447A

    公开(公告)日：1983-01-11

    申请号：US250549

    申请日：1981-04-03

    申请人： Koichiro Inomata ,  Michio Hasegawa

    发明人： Koichiro Inomata ,  Michio Hasegawa

    IPC分类号： H01F1/153 ,  H01F1/16 ,  H01F3/04 ,  H01F27/25 ,  H01F41/02 ,  H01L41/20 ,  H01F21/02

    CPC分类号： H01F1/15341 ,  H01F27/25 ,  H01F3/04 ,  Y10T428/12993

    摘要： A rolled core is formed by winding a thin body of an amorphous magnetic alloy having positive magnetostriction characteristics so that, of the two surfaces the surface of smaller surface coarseness faces inward. This rolled core is improved in iron loss over a rolled core obtained by winding the thin body so that the surface of greater surface coarseness faces inward. Breakage of the thin body tends to occur less frequently when it is wound so that the surface faces inward.

    摘要翻译： 卷芯通过卷绕具有正磁致伸缩特性的非晶磁性合金的薄体形成，使得两个表面的较小表面粗糙度的表面向内。 该卷芯通过卷绕薄体而获得的卷芯上的铁损增加，使得较大表面粗糙度的表面向内。 当卷绕时，薄体的破损倾向于较不频繁地发生，使得表面向内。

    FERROMAGNETIC TUNNEL JUNCTION STRUCTURE, AND MAGNETO-RESISTIVE ELEMENT AND SPINTRONICS DEVICE EACH USING SAME
    8.
    发明申请
    FERROMAGNETIC TUNNEL JUNCTION STRUCTURE, AND MAGNETO-RESISTIVE ELEMENT AND SPINTRONICS DEVICE EACH USING SAME 有权
    非线性隧道结构结构和磁阻电位元件和使用它们的磁电装置

    公开(公告)号：US20120091548A1

    公开(公告)日：2012-04-19

    申请号：US13264460

    申请日：2010-04-15

    申请人： Hiroaki Sukegawa ,  Koichiro Inomata ,  Rong Shan ,  Masaya Kodzuka ,  Kazuhiro Hono ,  Takao Furubayashi ,  Wenhong Wang

    发明人： Hiroaki Sukegawa ,  Koichiro Inomata ,  Rong Shan ,  Masaya Kodzuka ,  Kazuhiro Hono ,  Takao Furubayashi ,  Wenhong Wang

    IPC分类号： H01L29/82 ,  H01L21/02

    CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/161 ,  H01F10/1936 ,  H01F10/3254 ,  H01F41/307 ,  H01L43/10

    摘要： Disclosed is a ferromagnetic tunnel junction structure which is characterized by having a tunnel barrier layer that comprises a non-magnetic material having a spinel structure. The ferromagnetic tunnel junction structure is also characterized in that the non-magnetic material is substantially MgAl2O4. The ferromagnetic tunnel junction is also characterized in that at least one of the ferromagnetic layers comprises a Co-based full Heusler alloy having an L21 or B2 structure. The ferromagnetic tunnel junction structure is also characterized in that the Co-based full Heusler alloy comprises a substance represented by the following formula: Co2FeAlxSi1-x (0≦x≦1). Also disclosed are a magnetoresistive element and a spintronics device, each of which utilizes the ferromagnetic tunnel junction structure and can achieve a high TMR value, that cannot be achieved by employing conventional tunnel barrier layers other than a MgO barrier.

    摘要翻译： 公开了一种铁磁隧道结结构，其特征在于具有隧道势垒层，其包括具有尖晶石结构的非磁性材料。 铁磁隧道结结构的特征还在于非磁性材料基本上是MgAl 2 O 4。 铁磁隧道结的特征还在于至少一个铁磁层包括具有L21或B2结构的Co基全Heusler合金。 铁磁隧道结结构的特征还在于，基于Co的全Heusler合金包含由下式表示的物质：Co2FeAlxSi1-x（0＆nlE; x＆nlE; 1）。 还公开了一种磁阻元件和自旋电子学器件，其中每一个都利用铁磁隧道结结构并且可以实现高TMR值，这不能通过使用除MgO阻挡层之外的常规隧道势垒层来实现。

    Magnetic thin film, magnetoresistance effect device and magnetic device using the same
    9.
    发明申请
    Magnetic thin film, magnetoresistance effect device and magnetic device using the same 审中-公开
    磁性薄膜，磁阻效应器件及使用其的磁性器件

    公开(公告)号：US20090015969A1

    公开(公告)日：2009-01-15

    申请号：US10589283

    申请日：2005-02-08

    申请人： Ryosuke Kainuma ,  Koichiro Inomata ,  Kiyohito Ishida

    发明人： Ryosuke Kainuma ,  Koichiro Inomata ,  Kiyohito Ishida

    IPC分类号： G11B5/33 ,  H01F1/00

    CPC分类号： H01F10/16 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/161 ,  H01F10/324 ,  H01F10/3254 ,  H01L43/10 ,  Y10T428/1114

    摘要： Magnetic thin film having high spin polarizability and a magnetoresistance effect device and a magnetic device using the same, provided with a substrate (2) and Co2MGa1-xAlx thin film (3) formed on the substrate (2), the Co2MGa1-xAlx thin film (3) has a L21 or B2 single phase structure, M of the thin film is either one or two or more of Ti, V, Mo, W, Cr, Mn, and Fe, an average valence electron concentration Z in M is 5.5≦Z≦7.5, and 0≦x≦0.7, shows ferromagnetism at room temperature, and can attain high spin polarizability. A buffer layer (4) may be inserted between the substrate (2) and the Co2FexCr1-xAl thin film (3). The tunnel magnetoresistance effect device and the giant magnetoresistance effect device using this magnetic thin film can attain large TMR and GMR at room temperature under the low magnetic field.

    摘要翻译： 具有高自旋极化性的磁性薄膜和磁阻效应器件及使用该磁性器件的磁性器件，在基片（2）上形成有衬底（2）和Co2MGa1-xAlx薄膜（3），Co2MGa1-xAlx薄膜 （3）具有L21或B2单相结构，M的薄膜为Ti，V，Mo，W，Cr，Mn和Fe中的一种或两种以上，M中的平均价电子浓度Z为5.5 <= Z <= 7.5，0 <= x <= 0.7，在室温下显示出铁磁性，并且可以获得高的自旋极化性。 可以在衬底（2）和Co2FexCr1-xAl薄膜（3）之间插入缓冲层（4）。 使用这种磁性薄膜的隧道磁阻效应器件和巨磁阻效应器件可以在低磁场下在室温下获得大的TMR和GMR。