利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

10 条记录 (耗时 0.032 秒)

    Solid state image sensor having planarized structure under light shielding metal layer
    3.
    发明授权
    Solid state image sensor having planarized structure under light shielding metal layer 失效
    在遮光金属层下具有平坦化结构的固态图像传感器

    公开(公告)号：US07301184B2

    公开(公告)日：2007-11-27

    申请号：US10657236

    申请日：2003-09-09

    申请人： Toru Kawasaki

    发明人： Toru Kawasaki

    IPC分类号： H01L27/148

    CPC分类号： H01L27/14643 ,  H01L27/14623 ,  H01L27/1463

    摘要： Shift register electrodes are formed in an imaging area and a peripheral area through use of a single layer of conductive film, and a thick insulating film is deposited over those electrodes and planarized. The thick insulating film overlying the shift register electrodes in the peripheral area is kept as it is and on the other hand, the thick insulating film overlying the shift register electrodes is etched to just fill gaps between the shift register electrodes with the film, thereby allowing a light shielding metal layer overlying the shift register electrodes in the peripheral area and insulating films sandwiched therebetween to be formed without discontinuity. Since metal interconnect lines in the peripheral area have a thick and planarized insulating film formed thereunder, parasitic capacitance between diffusion layers/electrodes and the metal interconnect lines can be reduced, leading to reduction in power consumption of image sensor.

    摘要翻译： 移位寄存器电极通过使用单层导电膜形成在成像区域和外围区域中，并且在这些电极上沉积厚的绝缘膜并进行平坦化。 覆盖周边区域中的移位寄存器电极的厚绝缘膜保持原样，另一方面，覆盖移位寄存器电极的厚绝缘膜被蚀刻以仅填充移位寄存器电极与膜之间的间隙，从而允许 覆盖周边区域中的移位寄存器电极的遮光金属层和夹在其间的绝缘膜，而不间断地形成。 由于周边区域的金属布线具有在其上形成的厚且平坦化的绝缘膜，所以可以减小扩散层/电极和金属互连线之间的寄生电容，从而降低图像传感器的功耗。

    Semiconductor device and method of manufacturing semiconductor device
    4.
    发明申请
    Semiconductor device and method of manufacturing semiconductor device 有权
    半导体装置及其制造方法

    公开(公告)号：US20110042749A1

    公开(公告)日：2011-02-24

    申请号：US12805291

    申请日：2010-07-22

    申请人： Toru Kawasaki ,  Satoshi Kura ,  Mitsuo Nissa ,  Naotaka Kamishita

    发明人： Toru Kawasaki ,  Satoshi Kura ,  Mitsuo Nissa ,  Naotaka Kamishita

    IPC分类号： H01L27/088 ,  H01L21/8234

    CPC分类号： H01L27/10894 ,  H01L21/823468 ,  H01L27/088 ,  H01L27/10873 ,  H01L29/6653

    摘要： A first transistor includes a first gate insulating film, a first gate electrode, and a first sidewall. A second transistor includes a second gate insulating film, a second gate electrode, and a second sidewall. A capacitive element is connected to one side of source and drain regions of the second transistor. The first gate insulating film has the same thickness as that of the second gate insulating film, and the first gate electrode has the same thickness of that of the second gate electrode. The width of the second sidewall is larger than the width of the first sidewall.

    摘要翻译： 第一晶体管包括第一栅极绝缘膜，第一栅电极和第一侧壁。 第二晶体管包括第二栅极绝缘膜，第二栅电极和第二侧壁。 电容元件连接到第二晶体管的源区和漏区的一侧。 第一栅极绝缘膜具有与第二栅极绝缘膜相同的厚度，并且第一栅极电极具有与第二栅极电极的厚度相同的厚度。 第二侧壁的宽度大于第一侧壁的宽度。

    Solid state imaging pickup device and method for manufacturing the same
    7.
    发明授权
    Solid state imaging pickup device and method for manufacturing the same 失效
    固态成像拾取装置及其制造方法

    公开(公告)号：US06518605B1

    公开(公告)日：2003-02-11

    申请号：US09770188

    申请日：2001-01-29

    申请人： Keisuke Hatano ,  Masayuki Furumiya ,  Toru Kawasaki

    发明人： Keisuke Hatano ,  Masayuki Furumiya ,  Toru Kawasaki

    IPC分类号： H01L29768

    CPC分类号： H01L27/14603 ,  H01L27/14692

    摘要： A solid state imaging pickup device with a single-layer electrode structure which eliminates the release area at the terminal part of the charge transfer electrodes by surrounding the charge transfer electrodes with a dummy pattern, or with a pattern formed by connecting the charge transfer electrodes of a certain phase with each other at the outermost periphery. Surrounding the charge transfer electrode improves embedding performance when an insulating film is re-flowed for flattening inter-electrode gaps. This enables formation of a good metal wire or shielding film with no step-cut, thus improving the reliability of a solid state imaging pickup device.

    摘要翻译： 一种具有单层电极结构的固态成像拾取装置，其通过用虚拟图案围绕电荷转移电极或通过连接电荷转移电极形成的图案来消除电荷转移电极的末端部分处的释放区域 在最外周彼此相邻。 围绕电荷转移电极，当绝缘膜被再流动以使平板化的电极间间隙时，可提高嵌入性能。 这样可以形成没有阶梯切割的良好的金属线或屏蔽膜，从而提高了固态成像拾取装置的可靠性。

    Semiconductor device and method of manufacturing semiconductor device
    9.
    发明授权
    Semiconductor device and method of manufacturing semiconductor device 有权
    半导体装置及其制造方法

    公开(公告)号：US08309414B2

    公开(公告)日：2012-11-13

    申请号：US12805291

    申请日：2010-07-22

    申请人： Toru Kawasaki ,  Satoshi Kura ,  Mitsuo Nissa ,  Naotaka Kamishita

    发明人： Toru Kawasaki ,  Satoshi Kura ,  Mitsuo Nissa ,  Naotaka Kamishita

    IPC分类号： H01L27/088 ,  H01L21/8239

    CPC分类号： H01L27/10894 ,  H01L21/823468 ,  H01L27/088 ,  H01L27/10873 ,  H01L29/6653

    摘要： A first transistor includes a first gate insulating film, a first gate electrode, and a first sidewall. A second transistor includes a second gate insulating film, a second gate electrode, and a second sidewall. A capacitive element is connected to one side of source and drain regions of the second transistor. The first gate insulating film has the same thickness as that of the second gate insulating film, and the first gate electrode has the same thickness of that of the second gate electrode. The width of the second sidewall is larger than the width of the first sidewall.

    摘要翻译： 第一晶体管包括第一栅极绝缘膜，第一栅电极和第一侧壁。 第二晶体管包括第二栅极绝缘膜，第二栅电极和第二侧壁。 电容元件连接到第二晶体管的源区和漏区的一侧。 第一栅极绝缘膜具有与第二栅极绝缘膜相同的厚度，并且第一栅极电极具有与第二栅极电极的厚度相同的厚度。 第二侧壁的宽度大于第一侧壁的宽度。