公开(公告)号：US4142160A

公开(公告)日：1979-02-27

申请号：US612103

申请日：1975-09-10

申请人： Toshihisa Tsukada ,  Naoki Chinone ,  Satoshi Nakamura ,  Ryoichi Ito

发明人： Toshihisa Tsukada ,  Naoki Chinone ,  Satoshi Nakamura ,  Ryoichi Ito

IPC分类号： H01L21/00 ,  H01L33/00 ,  H01S5/22 ,  H01S5/40 ,  H01S3/19

CPC分类号： H01S5/4031 ,  H01L21/00 ,  H01L33/00 ,  H01S5/22

摘要： A semiconductor laser having a structure such that a narrow strip mesa is formed above a laser active layer in a hetero-structure crystal so that it can generate a laser beam of improved optical property.

摘要翻译： 具有如下结构的半导体激光器，即在异质结构晶体中的激光有源层的上方形成窄条状台面，使得其可以产生改善的光学特性的激光束。

公开(公告)号：US5719408A

公开(公告)日：1998-02-17

申请号：US803011

申请日：1997-02-21

申请人： Hideaki Yamamoto ,  Haruo Matsumaru ,  Yasuo Tanaka ,  Ken Tsutsui ,  Toshihisa Tsukada ,  Kazuo Shirahashi ,  Akira Sasano ,  Yuka Matsukawa

发明人： Hideaki Yamamoto ,  Haruo Matsumaru ,  Yasuo Tanaka ,  Ken Tsutsui ,  Toshihisa Tsukada ,  Kazuo Shirahashi ,  Akira Sasano ,  Yuka Matsukawa

IPC分类号： G02F1/1343 ,  G02F1/1345 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30 ,  G09G3/36 ,  H01L21/3205 ,  H01L21/336 ,  H01L27/12 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H01L29/04 ,  H01L27/108 ,  H01L31/036

CPC分类号： G02F1/136286 ,  G02F1/1345 ,  G02F1/136213 ,  H01L29/4908 ,  H01L2924/0002

摘要： In the present invention, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance) and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In a more preferred structure, the anodic oxidized film is used for all of the gate insulators, the dielectric films for the thin film capacitances and the interlayer insulation films for the intersections between the bus lines. The present invention also relates to a method of selectively forming an anodic oxidized film on an aluminum pattern. That is, in a case of forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, in the present invention, an angle (.theta.) formed between the selective oxidation mask and the aluminum pattern is made as: .theta..gtoreq.110-20T (T: film thickness of the positive type photoresist).

摘要翻译： 在本发明中，Cr或Ta用于栅极端子，铝或主要由铝组成的金属用于从其延伸的栅极总线，栅电极和薄膜电容（附加电容，存储电容）和阳极氧化膜 由金属构成并且没有缺陷用于栅极绝缘体，薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜中的至少一个。 在更优选的结构中，阳极氧化膜用于所有栅极绝缘体，用于薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜。 本发明还涉及在铝图案上选择性地形成阳极氧化膜的方法。 也就是说，在使用正型光致抗蚀剂在铝图案上的期望区域上形成选择性氧化掩模的情况下，在本发明中，在选择性氧化掩模和铝图案之间形成的角度（θ）为： θ= 110-20T（T：正型光致抗蚀剂的膜厚度）。

公开(公告)号：US5604142A

公开(公告)日：1997-02-18

申请号：US419232

申请日：1995-04-10

申请人： Kazuhiro Komori ,  Satoshi Meguro ,  Takaaki Hagiwara ,  Hitoshi Kume ,  Toshihisa Tsukada ,  Hideaki Yamamoto

发明人： Kazuhiro Komori ,  Satoshi Meguro ,  Takaaki Hagiwara ,  Hitoshi Kume ,  Toshihisa Tsukada ,  Hideaki Yamamoto

IPC分类号： H01L27/06 ,  H01L27/105 ,  H01L29/788 ,  H01L21/8247

CPC分类号： H01L27/105 ,  H01L29/7885 ,  H01L29/7886 ,  H01L27/0688

摘要： This invention discloses EEPROM which increases an erasing voltage V.sub.pp to be applied in a data write cycle by increasing an avalanche breakdown voltage between a source region and a semiconductor substrate in order to improve erasing efficiency, and employs a structure which strengthens the electric field at the edge of a drain region in order to let hot carrier be easily generated and to improve writing efficiency.

摘要翻译： 本发明公开了一种EEPROM，其通过增加源极区域和半导体衬底之间的雪崩击穿电压来增加在数据写入周期中施加的擦除电压Vpp，以提高擦除效率，并采用这样的结构， 边缘，以便容易地产生热载体并提高写入效率。

公开(公告)号：US5266825A

公开(公告)日：1993-11-30

申请号：US864937

申请日：1992-04-07

申请人： Toshihisa Tsukada ,  Yoshiyuki Kaneko

发明人： Toshihisa Tsukada ,  Yoshiyuki Kaneko

IPC分类号： H01L29/423 ,  H01L29/45 ,  H01L29/786 ,  H01L27/01 ,  G02F1/13 ,  H01L27/12 ,  H01L29/78

CPC分类号： H01L29/458 ,  H01L29/42384 ,  H01L29/78606

摘要： A thin-film transistor using hydrogenated amorphous silicon (a-Si:H), and particularly a thin-film device such as a thin-film transistor having high conductivity, large drivability and high process margin, and a display panel using the same transistors. The object of the invention is to reduce defects due to shorts between the gate and the source or between the gate and the drain, to prevent signal line defect even in case defects develop due to shorts, and to expand the design margin and process margin in the array. A capacity is connected to the gate electrode of the channel side and a voltage is applied to the gate electrode via the capacity.

摘要翻译： 使用氢化非晶硅（a-Si：H）的薄膜晶体管，特别是具有高导电性，大驱动性和高工艺裕度的诸如薄膜晶体管的薄膜器件以及使用相同晶体管的显示面板 。 本发明的目的是减少由于栅极和源极之间或者栅极与漏极之间的短路导致的缺陷，即使在由于短路导致的缺陷发生的情况下也可防止信号线缺陷，并且扩大设计余量和工艺裕度 阵列。 电容器连接到沟道侧的栅电极，并通过该电容将电压施加到栅电极。

公开(公告)号：US5153690A

公开(公告)日：1992-10-06

申请号：US597323

申请日：1990-10-15

申请人： Toshihisa Tsukada ,  Yoshiyuki Kaneko

发明人： Toshihisa Tsukada ,  Yoshiyuki Kaneko

IPC分类号： H01L29/423 ,  H01L29/45 ,  H01L29/786

CPC分类号： H01L29/42384 ,  H01L29/458 ,  H01L29/78606

摘要： A thin-film transistor using hydrogenated amorphous silicon (a-Si:H), and particularly a thin-film device such as a thin-film transistor having high conductivity, large drivability and high process margin, and a display panel using the same transistors. The object of the invention is to reduce defects due to shorts between the gate and the source or between the gate and the drain, to prevent signal line defect even in case defects develop due to shorts, and to expand the design margin and process margin in the array. A capacity is connected to the gate electrode of the channel side and a voltage is applied to the gate electrode via the capacity.

摘要翻译： 使用氢化非晶硅（a-Si：H）的薄膜晶体管，特别是具有高导电性，大驱动性和高工艺裕度的诸如薄膜晶体管的薄膜器件以及使用相同晶体管的显示面板 。 本发明的目的是减少由于栅极和源极之间或者栅极与漏极之间的短路导致的缺陷，即使在由于短路导致的缺陷发生的情况下也可防止信号线缺陷，并且扩大设计余量和工艺裕度 阵列。 电容器连接到沟道侧的栅电极，并通过该电容将电压施加到栅电极。

公开(公告)号：US4556800A

公开(公告)日：1985-12-03

申请号：US479893

申请日：1983-03-29

申请人： Hisao Ohta ,  Toru Baji ,  Yuji Izawa ,  Eizou Ebisui ,  Toshihisa Tsukada ,  Hideaki Yamamoto

发明人： Hisao Ohta ,  Toru Baji ,  Yuji Izawa ,  Eizou Ebisui ,  Toshihisa Tsukada ,  Hideaki Yamamoto

IPC分类号： H04N1/028 ,  G06K9/20 ,  G06T1/00 ,  H04N1/19 ,  H04N1/193 ,  H04N1/40 ,  H04N3/14

CPC分类号： G06K9/2009 ,  H04N1/1931 ,  H04N1/40056

摘要： An optical image sensor apparatus in which a plurality of photosensors arrayed in a primary scanning direction are scanned to produce readout signals. The plurality of photosensors are classified into a number of groups each including a predetermined number of the photosensors, wherein those photosensors occupying equivalently the same position in the different groups are combined in common. The outputs of the photosensors are sequentially and selectively scanned on a group basis to produce readout signal for each of the groups. To provide a scanning readout operation at an increased speed, an integrating circuit is provided for each of the photosensors exchangeably for each group. The outputs of all the photosensors belonging to a given one of the group are simultaneously supplied to the respective integrating circuits. The readout signal output is obtained by scanning sequentially the outputs of the integrating circuits.

摘要翻译： 其中扫描沿主扫描方向排列的多个光电传感器以产生读出信号的光学图像传感器装置。 多个光电传感器被分成多个组，每个组包括预定数量的光传感器，其中在不同组中占据相同位置的那些光传感器共同组合。 依次选择性地扫描光电传感器的输出，以产生每个组的读出信号。 为了以增加的速度提供扫描读出操作，为每组可更换的每个光电传感器提供积分电路。 属于给定组中的所有光电传感器的输出被同时提供给各个积分电路。 通过依次扫描积分电路的输出来获得读出信号输出。

公开(公告)号：US4233506A

公开(公告)日：1980-11-11

申请号：US903161

申请日：1978-05-05

申请人： Hideaki Yamamoto ,  Makoto Matsui ,  Toshihisa Tsukada ,  Yoshizumi Eto ,  Tadaaki Hirai ,  Eiichi Maruyama

发明人： Hideaki Yamamoto ,  Makoto Matsui ,  Toshihisa Tsukada ,  Yoshizumi Eto ,  Tadaaki Hirai ,  Eiichi Maruyama

IPC分类号： G02B6/42 ,  G02B27/00 ,  G02B27/02 ,  G06K9/20 ,  H01L27/144 ,  H04N1/028 ,  H04N1/031 ,  G02B5/14

CPC分类号： H04N1/0312 ,  G02B6/421 ,  G02B6/4249 ,  G06K9/2009 ,  H01L27/1446 ,  H04N1/0311 ,  H04N1/0315

摘要： A pboto-sensor wherein a bundle of optical fibers is disposed within a predetermined substrate, the optical fiber bundle extending from a first surface to a second surface of the substrate and being formed to be flat, an array of photosensitive elements which have photosensitive parts on an open end face of the optical fibers at the first surface of the substrate is disposed integrally with the substrate, and an end face of the optical fibers at the second surface of the substrate serves as an information reading surface.

摘要翻译： 一种光束传感器，其中一束光纤被布置在预定的衬底内，光纤束从衬底的第一表面延伸到第二表面并且被形成为平坦的，具有光敏部件的光敏元件阵列 在基板的第一表面处的光纤的开口端面与基板一体地设置，并且在基板的第二表面处的光纤的端面用作信息读取表面。

公开(公告)号：US4051528A

公开(公告)日：1977-09-27

申请号：US661806

申请日：1976-02-26

申请人： Yasutsugu Takeda ,  Hisashi Nakamura ,  Yoshito Tsunoda ,  Toshihisa Tsukada ,  Toshimitsu Miyauchi

发明人： Yasutsugu Takeda ,  Hisashi Nakamura ,  Yoshito Tsunoda ,  Toshihisa Tsukada ,  Toshimitsu Miyauchi

IPC分类号： H04N5/85 ,  G02B27/00 ,  G11B7/09 ,  G11B7/095 ,  G11B7/12 ,  G11B7/125 ,  G11B7/128 ,  G11B7/135 ,  H04N5/86

CPC分类号： G11B7/128 ,  G11B7/095 ,  G11B7/12 ,  Y10S250/909

摘要： Optical information reconstructing apparatus comprising a disc having at least one surface on which groups of dots bearing information are concentrically or spirally arrayed, a mechanism for rotating the disc, a light source for projecting a light beam on the array of groups of dots, and at least one photodetector for detecting diffracted light waves from the groups of dots, characterized in that a semiconductor laser array is used as the light source and that the light emission is switched from one laser source to another in the laser array in tracking the information.

公开(公告)号：US5889573A

公开(公告)日：1999-03-30

申请号：US928719

申请日：1997-09-12

申请人： Hideaki Yamamoto ,  Haruo Matsumaru ,  Yasuo Tanaka ,  Ken Tsutsui ,  Toshihisa Tsukada ,  Kazuo Shirahashi ,  Akira Sasano ,  Yuka Matsukawa

发明人： Hideaki Yamamoto ,  Haruo Matsumaru ,  Yasuo Tanaka ,  Ken Tsutsui ,  Toshihisa Tsukada ,  Kazuo Shirahashi ,  Akira Sasano ,  Yuka Matsukawa

IPC分类号： G02F1/1343 ,  G02F1/1345 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30 ,  G09G3/36 ,  H01L21/3205 ,  H01L21/336 ,  H01L27/12 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H01L29/04

CPC分类号： G02F1/136286 ,  G02F1/1345 ,  G02F1/136213 ,  H01L29/4908 ,  H01L2924/0002

摘要： The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel and, more in particular, it relates to a structure and a manufacturing method which enables to improve the characteristics thereof.In the present invention, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance) and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In a more preferred structure, the anodic oxidized film is used for all of the gate insulators, the dielectric films for the thin film capacitances and the interlayer insulation films for the intersections between the bus-lines.The present invention also relates to a method of selectively forming an anodic oxidized film on an aluminum pattern. That is, in a case of forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, in the present invention, an angle (.theta.) formed between the selective oxidation mask and the aluminum pattern is made as: .theta..gtoreq.110-20T (T: film thickness of the positive type photoresist).

摘要翻译： 本发明涉及使用薄膜晶体管的有源矩阵寻址TFT基板，其制造方法和阳极氧化方法，使用TFT基板的液晶显示面板和使用该液晶显示面板的液晶显示设备， 更具体地，涉及能够改善其特性的结构和制造方法。 在本发明中，Cr或Ta用于栅极端子，铝或主要由铝组成的金属用于从其延伸的栅极总线，栅电极和薄膜电容（附加电容，存储电容）和阳极氧化膜 由金属构成并且没有缺陷用于栅极绝缘体，薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜中的至少一个。 在更优选的结构中，阳极氧化膜用于所有栅极绝缘体，用于薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜。 本发明还涉及在铝图案上选择性地形成阳极氧化膜的方法。 也就是说，在使用正型光致抗蚀剂在铝图案上的期望区域上形成选择性氧化掩模的情况下，在本发明中，在选择性氧化掩模和铝图案之间形成的角度（θ）为： θ= 110-20T（T：正型光致抗蚀剂的膜厚度）。

公开(公告)号：US5359206A

公开(公告)日：1994-10-25

申请号：US674328

申请日：1991-04-15

申请人： Hideaki Yamamoto ,  Haruo Matsumaru ,  Yasuo Tanaka ,  Ken Tsutsui ,  Toshihisa Tsukada ,  Kazuo Shirahashi ,  Akira Sasano ,  Yuka Matsukawa

发明人： Hideaki Yamamoto ,  Haruo Matsumaru ,  Yasuo Tanaka ,  Ken Tsutsui ,  Toshihisa Tsukada ,  Kazuo Shirahashi ,  Akira Sasano ,  Yuka Matsukawa

IPC分类号： G02F1/1343 ,  G02F1/1345 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30 ,  G09G3/36 ,  H01L21/3205 ,  H01L21/336 ,  H01L27/12 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H01L29/04 ,  H01L23/48 ,  H01L27/01 ,  H01L31/036

CPC分类号： G02F1/136286 ,  G02F1/1345 ,  G02F1/136213 ,  H01L29/4908 ,  H01L2924/0002

摘要： Disclosed is an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel. In the TFT substrate, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extending therefrom, for gate electrodes, and for electrodes of thin film capacitors (additional capacitance, storage capacitance), and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulating films for the intersections between the bus-lines. Also disclosed is a method of selectively forming an anodic oxidized film on an aluminum pattern. That is, in a case of forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, in the present invention, an angle (.theta.) formed between the selective oxidation mask and the aluminum pattern is made as: .theta..gtoreq.110-20T (T: film thickness of the positive type photoresist).

摘要翻译： PCT No.PCT / JP90 / 01039 Sec。 371日期：1991年4月15日 102（e）日期1991年4月15日PCT提交1990年8月13日PCT公布。 WO91 / 02999 PCT出版物 1991年3月7日公开。公开是使用薄膜晶体管的有源矩阵寻址TFT基板，其制造方法和阳极氧化方法，使用TFT基板的液晶显示面板和使用液体的液晶显示设备 水晶显示面板。 在TFT基板中，使用Cr或Ta作为栅极端子，铝或主要由铝构成的金属用于从栅极电极延伸的栅极总线，以及用于薄膜电容器的电极（附加电容，存储电容） 并且由金属构成并且没有缺陷的阳极氧化膜用于栅极绝缘体，薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜中的至少一种。 还公开了在铝图案上选择性地形成阳极氧化膜的方法。 也就是说，在使用正型光致抗蚀剂在铝图案上的期望区域上形成选择性氧化掩模的情况下，在本发明中，在选择性氧化掩模和铝图案之间形成的角度（θ）为： θ= 110-20T（T：正型光致抗蚀剂的膜厚度）。