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    Silicon dioxide film and process for preparation of the same
    5.
    发明申请
    Silicon dioxide film and process for preparation of the same 审中-公开
    二氧化硅薄膜及其制备方法

    公开(公告)号：US20060194453A1

    公开(公告)日：2006-08-31

    申请号：US10550859

    申请日：2004-03-25

    申请人： Yasushi Murakami ,  Masayuki Harano ,  Yoshio Takasu ,  Yoshio Taniguchi

    发明人： Yasushi Murakami ,  Masayuki Harano ,  Yoshio Takasu ,  Yoshio Taniguchi

    IPC分类号： H01L23/58 ,  H01L21/31

    CPC分类号： C03C11/00 ,  C03C3/06 ,  C03C2201/80

    摘要： A transparent amorphous silicon dioxide film containing many fine voids, characterized in that the refractive index (for light at λ=500 nm) is in the range of 1.01 to 1.40 and that 80 vol. % or more of the fine voids have a diameter of 5 nm or less, has a low refractive index and excellent physical strength such as high scratch resistance, so that it is advantageously employable as an optical film of an optical device for various uses.

    摘要翻译： 含有许多细小空隙的透明无定形二氧化硅膜，其特征在于折射率（对于λ= 500nm的光）在1.01〜1.40的范围内，80体积％ 小于等于或小于5nm的直径为5nm以下，具有折射率低，耐刮擦性优异的物理强度，有利地可用作各种用途的光学装置的光学膜。

    Light emitting apparatus
    6.
    发明申请
    Light emitting apparatus 审中-公开
    发光装置

    公开(公告)号：US20050062412A1

    公开(公告)日：2005-03-24

    申请号：US10493450

    申请日：2002-10-22

    申请人： Yoshio Taniguchi ,  Masahiro Oki ,  Yuji Yokomizo ,  Shigeru Okada

    发明人： Yoshio Taniguchi ,  Masahiro Oki ,  Yuji Yokomizo ,  Shigeru Okada

    IPC分类号： H01L51/00 ,  H01L51/30 ,  H01L51/52 ,  H05B33/04

    CPC分类号： H01L51/0096 ,  F21K9/232 ,  F21Y2105/00 ,  F21Y2115/10 ,  F21Y2115/20 ,  H01L51/0035 ,  H01L51/0062 ,  H01L51/007 ,  H01L51/52 ,  H01L51/5203 ,  H01L51/524 ,  H01L51/5246 ,  H01L51/5262 ,  H01L2251/5338 ,  H01L2251/5361 ,  Y02E10/549

    摘要： A light emitting apparatus having a large quantity of light per space necessary for installation, which allows easy adjustment of the directivity of light emission and easy arrangement of the color of emitted light and has a high light emitting efficiency, is achieved by a light emitting apparatus, which is comprised of a moisture impermeable substrate having a warped configuration, an electro-luminescent light emitting laminated body formed on the inner surface of the warped substrate having such constitution that, from the warped substrate side, at least a first electrode layer, a light emitting function layer and a second electrode layer being laminated in this order, a moisture impermeable opposing substrate joined in an impermeable manner at the edge portion or in a region adjacent to the edge portion of the warped substrate and electrical connection terminals connected to each of the electrode layers of the electro-luminescent light emitting laminated body for externally supplying electrical energy to each electrode layer.

    摘要翻译： 一种发光装置，其具有安装所需的每个空间的大量光，其允许容易地调节发光的方向性并且容易地布置发光的颜色并具有高的发光效率，通过发光装置 ，其由具有翘曲构型的不透水基材构成，形成在翘曲基板的内表面上的电致发光发光层叠体具有以下结构：从弯曲基板侧至少第一电极层， 发光功能层和第二电极层，以不透水的方式在边缘部分或与弯曲基板的边缘部分相邻的区域中连接的不透水相对基板和连接到弯曲基板的边缘部分的电连接端子 用于外部供给的电致发光层叠体的电极层 g电能到每个电极层。

    Recording member
    8.
    发明授权
    Recording member 失效
    录音成员

    公开(公告)号：US4348461A

    公开(公告)日：1982-09-07

    申请号：US160661

    申请日：1980-06-18

    申请人： Motoyasu Terao ,  Yoshio Taniguchi ,  Shinkichi Horigome ,  Masahiro Ojima ,  Kazuo Shigematsu ,  Keizo Kato ,  Yoshinori Miyamura ,  Seiji Yonezawa

    发明人： Motoyasu Terao ,  Yoshio Taniguchi ,  Shinkichi Horigome ,  Masahiro Ojima ,  Kazuo Shigematsu ,  Keizo Kato ,  Yoshinori Miyamura ,  Seiji Yonezawa

    IPC分类号： B41M5/26 ,  G03C1/705 ,  G11B7/24 ,  G11B7/243 ,  B32B5/14

    CPC分类号： G11B7/243 ,  G03C1/705 ,  G11B2007/24314 ,  G11B2007/24316 ,  Y10S428/913 ,  Y10S430/146 ,  Y10S430/165 ,  Y10T428/31

    摘要： A recording member having a predetermined substrate, and a thin film which is formed on the substrate and which is formed with recesses or pits for recording information when irradiated with a working beam, characterized in that said thin film is formed of an inorganic material which contains at least arsenic, selenium and tellurium, and that a distribution of either of said Se and said Te decreases from a part near the surface of said thin film towards a central part thereof, while a distribution of said As increases from a part near the surface towards said central part, is disclosed. This recording member can afford a high signal-to-noise ratio and a long lifetime. It is preferable that the distribution of said Se decreases so as to be at least 50 atomic-% in terms of the content of said Se in a part being the closest to the surface of said thin film and to be at most 40 atomic-% in terms of the average content of said Se over the whole thin film, and that the distribution of said As increases so as to be at most 15 atomic-% in terms of the content of said As in the closest part and to be 5 to 35 atomic-% in terms of the average content of said As in said whole thin film. The Se-Te-As-based material may well be doped with at least one element selected from the group consisting of Ge, S, Tl, Sn, Pb, In and Ta, within a range of 2 to 15 atomic-%.

    摘要翻译： 具有预定基板的记录部件和形成在基板上并且在用工作光束照射时用于记录信息的凹坑或凹坑形成的薄膜，其特征在于，所述薄膜由无机材料形成，所述无机材料包含 至少砷，硒和碲，并且所述Se和所述Te中的任一个的分布从所述薄膜的表面附近的部分向其中心部分减少，而所述As的分布从表面附近的部分增加 朝向所述中心部分。 该记录部件可以提供高的信噪比和长的使用寿命。 优选所述Se的分布以与所述薄膜表面最接近的部分中的所述Se的含量为至少50原子％，并且为至多40原子％ 就所述Se在整个薄膜上的平均含量而言，所述As的分布以所述As在最接近的部分的含量为最多为15原子％，并且为5〜 在所述整个薄膜中，所述As的平均含量为35原子％。 可以在2至15原子％的范围内掺杂选自由Ge，S，Tl，Sn，Pb，In和Ta组成的组中的至少一种元素的Se-Te-As基材料。