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86 条记录 (耗时 0.041 秒)

    Circuit for generating scanning pulses
    2.
    发明授权
    Circuit for generating scanning pulses 失效
    用于产生扫描脉冲的电路

    公开(公告)号：US4295055A

    公开(公告)日：1981-10-13

    申请号：US46028

    申请日：1979-06-06

    申请人： Iwao Takemoto ,  Norio Koike ,  Shinya Ohba ,  Haruhisa Ando ,  Masaaki Nakai ,  Syoji Hanamura ,  Ryuichi Izawa ,  Masaharu Kubo ,  Masakazu Aoki ,  Shuhei Tanaka

    发明人： Iwao Takemoto ,  Norio Koike ,  Shinya Ohba ,  Haruhisa Ando ,  Masaaki Nakai ,  Syoji Hanamura ,  Ryuichi Izawa ,  Masaharu Kubo ,  Masakazu Aoki ,  Shuhei Tanaka

    IPC分类号： G11C19/00 ,  G11C19/18 ,  G11C19/28 ,  H01L27/146 ,  H01L31/10 ,  H03K5/15 ,  H04N3/14

    CPC分类号： H03K5/15093 ,  G11C19/184 ,  G11C19/28

    摘要： A circuit for generating scanning pulses comprising a plurality of stages of basic circuits connected in series, said each basic circuit comprising first, second and third insulated gate field-effect transistors (MISTs) each of which has first and second terminals each being either of source and drain terminals and a gate terminal, said first terminal of said first MIST being used as a clock pulse-applying terminal, said gate terminal of said first MIST being used as an input terminal, said second terminal of said first MIST and said first terminal and said gate terminal of said second MIST being connected and used as a scanning pulse output terminal, said second terminal of said second MIST and said first terminal of said third MIST being connected and used as an output terminal, said second terminal of said third MIST being used as a ground terminal, said gate terminal of said third MIST being used as a feedback input terminal.

    摘要翻译： 一种用于产生扫描脉冲的电路，包括串联连接的多级基本电路，所述每个基本电路包括第一，第二和第三绝缘栅极场效应晶体管（MIST），每个绝缘栅场效应晶体管的第一和第二端子均为源极 所述第一MIST的所述第一端子用作时钟脉冲施加端子，所述第一MIST的所述栅极端子用作输入端子，所述第一MIST的所述第二端子和所述第一端子的所述第一端子 并且所述第二MIST的所述栅极端子被连接并用作扫描脉冲输出端子，所述第二MIST的所述第二端子和所述第三MIST的所述第一端子被连接并用作输出端子，所述第三MIST的所述第二端子 被用作接地端子，所述第三MIST的所述栅极端子用作反馈输入端子。

    Solid-state imaging device
    4.
    发明授权
    Solid-state imaging device 失效
    固态成像装置

    公开(公告)号：US4405935A

    公开(公告)日：1983-09-20

    申请号：US227679

    申请日：1981-01-23

    申请人： Toru Baji ,  Norio Koike ,  Toshihisa Tsukada ,  Iwao Takemoto ,  Hideaki Yamamoto ,  Yukio Takasaki

    发明人： Toru Baji ,  Norio Koike ,  Toshihisa Tsukada ,  Iwao Takemoto ,  Hideaki Yamamoto ,  Yukio Takasaki

    IPC分类号： H01L27/146 ,  H04N5/335 ,  H04N5/359 ,  H04N5/369 ,  H04N5/374 ,  H01L27/14

    CPC分类号： H01L27/14672

    摘要： Disclosed is a solid-state imaging device having a semiconductor integrated circuit in which a plurality of switching elements for selecting positions of picture elements and scanners for turning "on" and "off" the switching elements in time sequence are disposed on an identical substrate, a photoconductive film which is disposed on the integrated circuit and which is connected to one end of each of the switching elements, and a light transmitting electrode which is disposed on the photoconductive film, characterized at least in that a breakdown voltage of a junction formed between the semiconductor substrate and an impurity region which has a conductivity type opposite to that of the semiconductor substrate and which stores therein carriers attendant upon incidence of light is made smaller than a breakdown voltage between the storing first impurity region of said each switching element and a second impurity region thereof which forms a signal leading-out portion.

    摘要翻译： 公开了一种具有半导体集成电路的固态成像装置，其中用于选择用于按时间顺序将开关元件“接通”和“关闭”的图像元素和扫描器的位置的多个开关元件设置在相同的基板上， 设置在所述集成电路上并连接到每个所述开关元件的一端的光电导膜和设置在所述光电导膜上的透光电极，其特征在于，至少形成在所述光电导膜之间形成的结的击穿电压， 所述半导体衬底和具有与所述半导体衬底的导电类型相反的导电类型并且存储在入射时伴随的载流子的杂质区域被制成小于所述每个开关元件的所述存储第一杂质区域与所述第二开关元件的存储第一杂质区域之间的击穿电压 其形成信号导出部分的杂质区域。

    Solid-state imaging device
    6.
    发明授权
    Solid-state imaging device 失效
    固态成像装置

    公开(公告)号：US4514766A

    公开(公告)日：1985-04-30

    申请号：US482791

    申请日：1983-04-07

    申请人： Norio Koike ,  Iwao Takemoto ,  Shinya Ohba ,  Toshiaki Masuhara ,  Masaharu Kubo

    发明人： Norio Koike ,  Iwao Takemoto ,  Shinya Ohba ,  Toshiaki Masuhara ,  Masaharu Kubo

    IPC分类号： H04N5/345 ,  H04N5/372 ,  H04N5/3728 ,  H04N3/15

    CPC分类号： H04N3/1575 ,  H01L27/14856 ,  H04N3/1537

    摘要： A solid-state imaging device is provided which employs CCDs as vertical shift registers and a horizontal shift register for vertically and horizontally scanning and reading out a large number of photoelectric elements arrayed in a two-dimensional plane. The imaging device is characterized in that the photoelectric elements of each column arranged between the vertical shift registers are alternately connected to the right and left vertical shift registers. This results in the resolution of the device being enhanced sharply.

    摘要翻译： 提供了一种使用CCD作为垂直移位寄存器的固态成像装置和用于垂直和水平扫描并读出排列在二维平面中的大量光电元件的水平移位寄存器。 成像装置的特征在于，布置在垂直移位寄存器之间的每列的光电元件交替地连接到左右垂直移位寄存器。 这导致设备的分辨率急剧增加。

    Solid-state imaging device
    7.
    发明授权
    Solid-state imaging device 失效
    固态成像装置

    公开(公告)号：US4209806A

    公开(公告)日：1980-06-24

    申请号：US928734

    申请日：1978-07-27

    申请人： Norio Koike ,  Iwao Takemoto ,  Toshiyuki Akiyama ,  Haruhisa Ando ,  Shinya Ohba ,  Masatada Horiuchi ,  Masaharu Kubo

    发明人： Norio Koike ,  Iwao Takemoto ,  Toshiyuki Akiyama ,  Haruhisa Ando ,  Shinya Ohba ,  Masatada Horiuchi ,  Masaharu Kubo

    IPC分类号： H01L27/088 ,  H01L27/146 ,  H04N5/335 ,  H04N5/341 ,  H04N5/359 ,  H04N5/372 ,  H04N5/374 ,  H04N3/14 ,  H01L27/14 ,  H01L29/78

    CPC分类号： H01L27/14643 ,  H01L27/088

    摘要： In a solid-state imaging device wherein a plurality of photoelectric conversion elements, horizontal and vertical scanning circuits for addressing the photoelectric conversion elements, and horizontal and vertical switching transistors are comprised in a major surface region of an N (or P)-type semiconductor body, a solid-state imaging device characterized in that a plurality of P (or N)-type impurity layers isolated from one another are disposed in the major surface region of the semiconductor body, that the switching transistors and the photoelectric conversion elements are integrated in one of the impurity layers, the horizontal scanning circuit being integrated in another impurity layer, the vertical scanning circuit being integrated in still another impurity layer, and that predetermined voltages are applied to electrodes disposed on the respective impurity layers.

    摘要翻译： 在其中多个光电转换元件，用于寻址光电转换元件的水平和垂直扫描电路以及水平和垂直开关晶体管的固态成像器件包括在N（或P）型半导体的主表面区域中 其特征在于，在所述半导体主体的主表面区域设置有彼此隔离的多个P（或N）型杂质层，所述开关晶体管和所述光电转换元件被集成 在一个杂质层中，水平扫描电路集成在另一个杂质层中，垂直扫描电路集成在另一个杂质层中，并且预定电压施加到设置在各个杂质层上的电极。

    Solid-state imaging device
    8.
    发明授权
    Solid-state imaging device 失效
    固态成像装置

    公开(公告)号：US4148048A

    公开(公告)日：1979-04-03

    申请号：US871252

    申请日：1978-01-23

    申请人： Iwao Takemoto ,  Norio Koike ,  Masaharu Kubo

    发明人： Iwao Takemoto ,  Norio Koike ,  Masaharu Kubo

    IPC分类号： H01L27/146 ,  H01L27/14

    CPC分类号： H01L27/14645 ,  H01L27/14654

    摘要： A solid-state imaging device contains a photoelectric part in which a plurality of picture elements each consisting of a photodiode and a switching transistor are arranged in two dimensions. The picture elements are disposed on the same semiconductor substrate, and scanning circuits which scan the switching transistors of the photoelectric part in succession are provided. The solid-state imaging device further comprises a semiconductor layer which has a conductivity type opposite to that of the semiconductor substrate and which is disposed in one major surface of the semiconductor substrate and means for applying a reverse bias between the semiconductor layer and the semiconductor substrate. At least the photoelectric part is disposed within the semiconductor layer, and a high impurity concentration region which has the same conductivity type as that of the semiconductor layer and is disposed at least under a part of the photodiode.

    摘要翻译： 固态成像装置包括其中由光电二极管和开关晶体管组成的多个像素二维布置的光电部件。 图像元素设置在相同的半导体衬底上，并且连续地扫描光电部件的开关晶体管的扫描电路被设置。 固态成像装置还包括半导体层，其具有与半导体衬底的导电类型相反的导电类型，并且设置在半导体衬底的一个主表面中;以及用于在半导体层和半导体衬底之间施加反向偏压的装置 。 至少光电部件设置在半导体层内，高浓度区域具有与半导体层相同的导电类型，并且至少设置在光电二极管的一部分下方。

    Solid-state imaging device
    10.
    发明授权
    Solid-state imaging device 失效
    固态成像装置

    公开(公告)号：US4148051A

    公开(公告)日：1979-04-03

    申请号：US874939

    申请日：1978-02-03

    申请人： Norio Koike ,  Iwao Takemoto ,  Masaharu Kubo

    发明人： Norio Koike ,  Iwao Takemoto ,  Masaharu Kubo

    IPC分类号： H01L21/8234 ,  H01L27/146 ,  H01L31/113 ,  H04N5/335 ,  H04N5/369 ,  H04N5/374 ,  H01L27/14

    CPC分类号： H01L31/1136 ,  H01L21/823406 ,  H01L27/14643 ,  H01L27/14645

    摘要： In a solid-state imaging device wherein at least one pn-junction photodiode and photo-signal detecting means adjacent thereto are disposed in a surface portion of a semiconductor substrate of one conductivity type, a solid-state imaging device characterized in that at least one window region is disposed within a semiconductor region which constitutes said photodiode and which has the opposite conductivity type to that of said semiconductor substrate, said window region "hollowing" said semiconductor region up to the surface of said semiconductor substrate and being made of a part of said semiconductor substrate.

    摘要翻译： 在其中至少一个pn结光电二极管和与其相邻的光信号检测装置设置在一种导电类型的半导体衬底的表面部分中的固态成像装置中，其特征在于至少一个 窗口区域设置在构成所述光电二极管并且具有与所述半导体衬底的导电类型相反的导电类型的半导体区域内，所述窗口区域“中空”所述半导体区域直到所述半导体衬底的表面，并且由所述半导体区域的一部分 所述半导体衬底。