公开(公告)号：US20070231934A1

公开(公告)日：2007-10-04

申请号：US11584607

申请日：2006-10-23

申请人： Toshiya Sato ,  Katsuto Tanahashi

发明人： Toshiya Sato ,  Katsuto Tanahashi

IPC分类号： H01L21/66 ,  H01L21/461 ,  G01L21/30

CPC分类号： H01L22/20 ,  H01L21/67069 ,  H01L21/67271 ,  H01L21/67288 ,  H01L2924/0002 ,  H01L2924/00

摘要： A classification apparatus for the semiconductor substrate is provided with a bow measuring section which accepts silicon substrates and measures respective bows thereof. The classification apparatus is also provided with a bow judging section which, based on one or more standard value(s) set in advance, checks a measurement result by the bow measuring section against the standard value(s). The bow judging section judges to which of ranges defined based on the standard value(s) of the bow the measurement result by the bow measuring section belongs. Further, the classification apparatus is provided with a sorting section which accepts the silicon substrate having been measured by the bow measuring section and sorts the accepted silicon substrates based on the judgment results by the bow judging section. In other words, silicon substrates are grouped according to the bows by the sorting section. Then, respective silicon substrates are discharged in a grouped state.

摘要翻译： 用于半导体衬底的分类装置设置有接受硅衬底并测量其弓形的弓形测量部分。 分类装置还设置有弓形判定部，其根据预先设定的一个或多个标准值，根据标准值检查弓测量部的测量结果。 弓形判断部判断由弓测量部的测定结果所属的弓的标准值所规定的范围。 此外，分类装置具有分类部，其接受由弓测量部测量的硅基板，并根据弓判断部的判断结果对接受的硅基板进行分类。 换句话说，硅基板通过分拣部分根据弓而分组。 然后，以分组状态排出各硅衬底。

公开(公告)号：US07648887B2

公开(公告)日：2010-01-19

申请号：US11584607

申请日：2006-10-23

申请人： Toshiya Sato ,  Katsuto Tanahashi

发明人： Toshiya Sato ,  Katsuto Tanahashi

IPC分类号： H01L21/30

CPC分类号： H01L22/20 ,  H01L21/67069 ,  H01L21/67271 ,  H01L21/67288 ,  H01L2924/0002 ,  H01L2924/00

摘要： A classification apparatus for the semiconductor substrate is provided with a bow measuring section which accepts silicon substrates and measures respective bows thereof. The classification apparatus is also provided with a bow judging section which, based on one or more standard value(s) set in advance, checks a measurement result by the bow measuring section against the standard value(s). The bow judging section judges to which of ranges defined based on the standard value(s) of the bow the measurement result by the bow measuring section belongs. Further, the classification apparatus is provided with a sorting section which accepts the silicon substrate having been measured by the bow measuring section and sorts the accepted silicon substrates based on the judgment results by the bow judging section. In other words, silicon substrates are grouped according to the bows by the sorting section. Then, respective silicon substrates are discharged in a grouped state.

摘要翻译： 用于半导体衬底的分类装置设置有接受硅衬底并测量其弓形的弓形测量部分。 分类装置还设置有弓形判定部，其根据预先设定的一个或多个标准值，根据标准值检查弓测量部的测量结果。 弓形判断部判断由弓测量部的测定结果所属的弓的标准值所规定的范围。 此外，分类装置具有分类部，其接受由弓测量部测量的硅基板，并根据弓判断部的判断结果对接受的硅基板进行分类。 换句话说，硅基板通过分拣部分根据弓而分组。 然后，以分组状态排出各硅衬底。

公开(公告)号：US20070190809A1

公开(公告)日：2007-08-16

申请号：US11441065

申请日：2006-05-26

申请人： Katsuto Tanahashi ,  Hiroshi Kaneta

发明人： Katsuto Tanahashi ,  Hiroshi Kaneta

IPC分类号： H01L21/00

CPC分类号： H01L21/3225 ,  C30B29/06 ,  C30B33/02 ,  C30B33/04 ,  H01L21/268 ,  H01L29/7833

摘要： A wafer processing method is provided that includes the steps of heating a silicon wafer containing oxygen and irradiating an infrared ray having a wavelength within a range of 7-25 μm on the silicon wafer, and controlling formation of oxygen precipitates within the silicon wafer by selectively setting a heating temperature for heating the silicon wafer and an irradiation intensity of the infrared ray.

摘要翻译： 提供了一种晶片处理方法，其包括以下步骤：加热含氧的硅晶片，并在硅晶片上照射波长在7-25μm范围内的红外线，并且通过选择性地控制硅晶片内的氧沉淀物的形成 设定加热硅晶片的加热温度和红外线的照射强度。

公开(公告)号：US07906443B2

公开(公告)日：2011-03-15

申请号：US11441065

申请日：2006-05-26

申请人： Katsuto Tanahashi ,  Hiroshi Kaneta

发明人： Katsuto Tanahashi ,  Hiroshi Kaneta

IPC分类号： H01L21/00 ,  C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04 ,  B23K26/00

CPC分类号： H01L21/3225 ,  C30B29/06 ,  C30B33/02 ,  C30B33/04 ,  H01L21/268 ,  H01L29/7833

摘要： A wafer processing method is provided that includes the steps of heating a silicon wafer containing oxygen and irradiating an infrared ray having a wavelength within a range of 7-25 μm on the silicon wafer, and controlling formation of oxygen precipitates within the silicon wafer by selectively setting a heating temperature for heating the silicon wafer and an irradiation intensity of the infrared ray.

摘要翻译： 提供一种晶片处理方法，其包括以下步骤：加热含有氧的硅晶片并在硅晶片上照射波长在7-25μm范围内的红外线，并且通过选择性地控制硅晶片内的氧沉淀物的形成 设定加热硅晶片的加热温度和红外线的照射强度。