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    Acoustic wave device and method for manufacturing the same
    1.
    发明授权
    Acoustic wave device and method for manufacturing the same 有权
    声波装置及其制造方法

    公开(公告)号：US08319394B2

    公开(公告)日：2012-11-27

    申请号：US12864073

    申请日：2008-11-26

    申请人： Toshiyuki Fuyutsume ,  Taro Nishino ,  Hisashi Yamazaki ,  Kiyoto Araki ,  Noboru Tamura ,  Nakaba Ichikawa ,  Masaki Aruga

    发明人： Toshiyuki Fuyutsume ,  Taro Nishino ,  Hisashi Yamazaki ,  Kiyoto Araki ,  Noboru Tamura ,  Nakaba Ichikawa ,  Masaki Aruga

    IPC分类号： H03H9/25

    CPC分类号： H03H3/10 ,  Y10T29/42

    摘要： Provided are an acoustic wave device and a method for manufacturing the same, the acoustic wave device being effectively prevented from expanding and contracting due to temperature change and having a small frequency shift. The acoustic wave device of the present invention has a piezoelectric substrate (1) having an IDT (2) formed on one principal surface of the piezoelectric substrate (1), and a thermal spray film (3) formed on an opposite principal surface (1b) of the piezoelectric substrate (1), the thermal spray film being of a material having a smaller linear thermal expansion coefficient than the piezoelectric substrate (1) and having grain boundaries and pores (4), at least a part of which is filled with a filling material (5).

    摘要翻译： 提供一种声波装置及其制造方法，能够有效地防止声波装置由于温度变化而发生膨胀和收缩，并具有小的频移。 本发明的声波元件具有在压电基板（1）的一个主面上形成有IDT（2）的压电基板（1）和形成在相对的主面（1b）上的热喷涂膜 ），所述热喷涂膜是具有比所述压电基板（1）更小的线性热膨胀系数并且具有晶界和孔（4）的材料，所述材料的至少一部分填充有 填充材料（5）。

    ACOUSTIC WAVE DEVICE AND METHOD FOR MANUFACTURING THE SAME
    2.
    发明申请
    ACOUSTIC WAVE DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    声波装置及其制造方法

    公开(公告)号：US20100301700A1

    公开(公告)日：2010-12-02

    申请号：US12864073

    申请日：2008-11-26

    申请人： Toshiyuki Fuyutsume ,  Taro Nishino ,  Hisashi Yamazaki ,  Kiyoto Araki ,  Noboru Tamura ,  Nakaba Ichikawa ,  Masaki Aruga

    发明人： Toshiyuki Fuyutsume ,  Taro Nishino ,  Hisashi Yamazaki ,  Kiyoto Araki ,  Noboru Tamura ,  Nakaba Ichikawa ,  Masaki Aruga

    IPC分类号： H01L41/04 ,  H01L41/22

    CPC分类号： H03H3/10 ,  Y10T29/42

    摘要： Provided are an acoustic wave device and a method for manufacturing the same, the acoustic wave device being effectively prevented from expanding and contracting due to temperature change and having a small frequency shift. The acoustic wave device of the present invention has a piezoelectric substrate (1) having an IDT (2) formed on one principal surface of the piezoelectric substrate (1), and a thermal spray film (3) formed on an opposite principal surface (1b) of the piezoelectric substrate (1), the thermal spray film being of a material having a smaller linear thermal expansion coefficient than the piezoelectric substrate (1) and having grain boundaries and pores (4), at least a part of which is filled with a filling material (5).

    摘要翻译： 提供一种声波装置及其制造方法，能够有效地防止声波装置由于温度变化而发生膨胀和收缩，并具有小的频移。 本发明的声波元件具有在压电基板（1）的一个主面上形成有IDT（2）的压电基板（1）和形成在相对的主面（1b）上的热喷涂膜 ），所述热喷涂膜是具有比所述压电基板（1）更小的线性热膨胀系数并且具有晶界和孔（4）的材料，所述材料的至少一部分填充有 填充材料（5）。

    Piezo-electric substrate and manufacturing method of the same
    5.
    发明授权
    Piezo-electric substrate and manufacturing method of the same 有权
    压电基板及其制造方法相同

    公开(公告)号：US07569976B2

    公开(公告)日：2009-08-04

    申请号：US11880168

    申请日：2007-07-20

    申请人： Noboru Tamura ,  Nakaba Ichikawa ,  Takeshi Takabatake ,  Kaname Yasuda

    发明人： Noboru Tamura ,  Nakaba Ichikawa ,  Takeshi Takabatake ,  Kaname Yasuda

    IPC分类号： H01L41/08

    CPC分类号： H03H9/02834 ,  H03H3/10 ,  H03H9/02574 ,  Y10T29/42

    摘要： A piezo-electric substrate is mainly comprised of a base material and a film formed on one main surface of the base material. In the base material, the main surface on which the film is formed is a roughed main surface. The piezo-electric substrate is obtained by forming the film comprised of a material with a coefficient of linear expansion smaller than a coefficient of linear expansion of the base material on the roughened main surface using a thermal spraying method.

    摘要翻译： 压电基材主要由基材和形成在基材的一个主表面上的膜构成。 在基材中，形成有膜的主表面是粗糙的主表面。 通过使用热喷涂法将由包括粗糙化主表面上的基材的线膨胀系数的线性膨胀系数的材料构成的膜形成为压电基板。

    Piezo-electric substrate and manufacturing method of the same
    6.
    发明申请
    Piezo-electric substrate and manufacturing method of the same 有权
    压电基板及其制造方法相同

    公开(公告)号：US20080024037A1

    公开(公告)日：2008-01-31

    申请号：US11880168

    申请日：2007-07-20

    申请人： Noboru Tamura ,  Nakaba Ichikawa ,  Takeshi Takabatake ,  Kaname Yasuda

    发明人： Noboru Tamura ,  Nakaba Ichikawa ,  Takeshi Takabatake ,  Kaname Yasuda

    IPC分类号： H01L41/04 ,  H01L41/22

    CPC分类号： H03H9/02834 ,  H03H3/10 ,  H03H9/02574 ,  Y10T29/42

    摘要： A piezo-electric substrate is mainly comprised of a base material and a film formed on one main surface of the base material. In the base material, the main surface on which the film is formed is a roughed main surface. The piezo-electric substrate is obtained by forming the film comprised of a material with a coefficient of linear expansion smaller than a coefficient of linear expansion of the base material on the roughened main surface using a thermal spraying method.

    摘要翻译： 压电基板主要由基材和形成在基材的一个主表面上的膜构成。 在基材中，形成有膜的主表面是粗糙的主表面。 通过使用热喷涂法将由包括粗糙化主表面上的基材的线膨胀系数的线性膨胀系数的材料构成的膜形成为压电基板。