公开(公告)号：US20120230357A1

公开(公告)日：2012-09-13

申请号：US13438423

申请日：2012-04-03

申请人： Toshiyuki KAWAKAMI ,  Tomoki ONO ,  Shigetoshi ITO ,  Susumu OMI

发明人： Toshiyuki KAWAKAMI ,  Tomoki ONO ,  Shigetoshi ITO ,  Susumu OMI

IPC分类号： H01S5/10

CPC分类号： H01S5/22 ,  H01S5/10 ,  H01S5/32341 ,  H01S2301/176

摘要： In a GaN-based laser device having a GaN-based semiconductor stacked-layered structure including a light emitting layer, the semiconductor stacked-layered structure includes a ridge stripe structure causing a stripe-shaped waveguide, and has side surfaces opposite to each other to sandwich the stripe-shaped waveguide in its width direction therebetween. At least part of at least one of the side surfaces is processed to prevent the stripe-shaped waveguide from functioning as a Fabry-Perot resonator in the width direction.

摘要翻译： 在具有包括发光层的GaN基半导体层叠结构的GaN基激光器件中，半导体层叠结构包括引起条状波导的脊条结构，并且具有彼此相对的侧表面， 在其宽度方向夹着条形波导。 处理至少一个侧表面的至少一部分以防止条形波导在宽度方向上作为法布里 - 珀罗共振器起作用。

公开(公告)号：US20090011530A1

公开(公告)日：2009-01-08

申请号：US12211577

申请日：2008-09-16

申请人： Shigetoshi ITO ,  Takayuki Yuasa ,  Yoshihiro Ueta ,  Mototaka Taneya ,  Zenpei Tani ,  Kensaku Motoki

发明人： Shigetoshi ITO ,  Takayuki Yuasa ,  Yoshihiro Ueta ,  Mototaka Taneya ,  Zenpei Tani ,  Kensaku Motoki

IPC分类号： H01L33/00

CPC分类号： H01S5/2018 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01S5/0207 ,  H01S5/2231 ,  H01S5/3013 ,  H01S5/3202 ,  H01S5/32341 ,  H01S2301/173

摘要： A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 μm or more.

摘要翻译： 一种氮化物半导体激光器件，其具有内部晶体缺陷的减小和应力的缓解，以及包括该氮化物半导体激光器件的半导体光学装置。 首先，在配置有显示高密度晶体缺陷和低位错区域的位错集中区域的交替条纹的n型GaN衬底的表面上形成抗GaN晶体生长的生长抑制膜，从而涂覆位错浓缩区域 。 接下来，通过GaN晶体的外延生长，用生长抑制膜涂覆的n型GaN衬底与氮化物半导体层重叠。 此外，除去生长抑制膜以将激光波导区域和最接近的位错集中区域之间的横向距离调整为40μm以上。

公开(公告)号：US20130114633A1

公开(公告)日：2013-05-09

申请号：US13688021

申请日：2012-11-28

申请人： Shigetoshi ITO ,  Takayuki YUASA ,  Yoshihiro UETA ,  Mototaka TANEYA ,  Zenpei TANI ,  Kensaku MOTOKI

发明人： Shigetoshi ITO ,  Takayuki YUASA ,  Yoshihiro UETA ,  Mototaka TANEYA ,  Zenpei TANI ,  Kensaku MOTOKI

IPC分类号： H01S5/20 ,  H01S5/30

CPC分类号： H01S5/2018 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01S5/0207 ,  H01S5/2231 ,  H01S5/3013 ,  H01S5/3202 ,  H01S5/32341 ,  H01S2301/173

摘要： A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 μm or more.

公开(公告)号：US20100278205A1

公开(公告)日：2010-11-04

申请号：US12836211

申请日：2010-07-14

申请人： Shigetoshi ITO ,  Takayuki YUASA ,  Yoshihiro UETA ,  Mototaka TANEYA ,  Zenpei TANI ,  Kensaku MOTOKI

发明人： Shigetoshi ITO ,  Takayuki YUASA ,  Yoshihiro UETA ,  Mototaka TANEYA ,  Zenpei TANI ,  Kensaku MOTOKI

IPC分类号： H01S5/343 ,  H01S5/22

CPC分类号： H01S5/2018 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01S5/0207 ,  H01S5/2231 ,  H01S5/3013 ,  H01S5/3202 ,  H01S5/32341 ,  H01S2301/173

摘要： A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 μm or more.

摘要翻译： 一种氮化物半导体激光器件，其具有内部晶体缺陷的减小和应力的缓解，以及包括该氮化物半导体激光器件的半导体光学装置。 首先，在配置有显示高密度晶体缺陷和低位错区域的位错集中区域的交替条纹的n型GaN衬底的表面上形成抗GaN晶体生长的生长抑制膜，从而涂覆位错浓缩区域 。 接下来，通过GaN晶体的外延生长，用生长抑制膜涂覆的n型GaN衬底与氮化物半导体层重叠。 此外，除去生长抑制膜以将激光波导区域和最接近的位错集中区域之间的横向距离调节至40μm以上。