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    Plasma processing method and plasma processing apparatus
    2.
    发明授权
    Plasma processing method and plasma processing apparatus 失效
    等离子体处理方法和等离子体处理装置

    公开(公告)号：US5677012A

    公开(公告)日：1997-10-14

    申请号：US579158

    申请日：1995-12-27

    申请人： Toshiyuki Sakemi ,  Masaru Tanaka

    发明人： Toshiyuki Sakemi ,  Masaru Tanaka

    IPC分类号： H01J37/32 ,  B05D3/06

    CPC分类号： H01J37/32422 ,  H01J37/32623 ,  H01J37/3266

    摘要： A plasma processing apparatus comprises a vacuum chamber, a plasma beam generator arranged in the vacuum chamber, and a main hearth located in the vacuum chamber and is for carrying out a step of a plasma beam produced by the plasma beam generator to the main hearth. The plasma processing apparatus further comprises a permanent magnet and a hearth coil arranged in the vicinity of the main hearth to be concentric with a center axis of the main hearth to be concentric with a center axis of the main hearth. The meltability of a material and the flight distribution of the vapor particles derived from a vaporizable material are adjusted by varying an electric current supplied to the hearth coil.

    摘要翻译： 等离子体处理装置包括真空室，布置在真空室中的等离子体束发生器和位于真空室中的主炉，用于将由等离子体束发生器产生的等离子体束执行到主炉底。 所述等离子体处理装置还包括永久磁铁和炉床线圈，所述永磁体和炉床线圈布置在所述主炉床附近，以与所述主炉床的中心轴​​线同心，以与所述主炉床的中心轴​​线同心。 通过改变供给到炉管线圈的电流来调节材料的熔融性和来自可汽化材料的蒸气颗粒的飞行分布。

    Ion plating apparatus that prevents wasteful consumption of evaporation material
    3.
    发明授权
    Ion plating apparatus that prevents wasteful consumption of evaporation material 失效
    用于防止蒸发材料浪费的离子电镀设备

    公开(公告)号：US6021737A

    公开(公告)日：2000-02-08

    申请号：US985776

    申请日：1997-12-05

    申请人： Toshiyuki Sakemi ,  Masaru Tanaka

    发明人： Toshiyuki Sakemi ,  Masaru Tanaka

    IPC分类号： C23C14/32 ,  H05H1/54 ,  C23C16/00

    CPC分类号： C23C14/32 ,  H05H1/54

    摘要： A plasma beam is directed towards a hearth to flow electric current of the plasma through the hearth during formation of a thin film on a substrate. The plasma beam is directed towards an auxiliary anode to flow electric current of the plasma through the auxiliary anode during the period after completion of the formation of the thin film on the substrate and before beginning of the formation of a thin film on the subsequent substrate.

    摘要翻译： 在衬底上形成薄膜期间，将等离子体束引向炉膛以使等离子体的电流流过炉膛。 等离子体束被引导到辅助阳极，以在完成薄膜在基板上形成之后的时间期间以及在随后的基板上形成薄膜之前的期间，使等离子体的电流流过辅助阳极。

    Film growth method and film growth apparatus capable of forming magnesium oxide film with increased film growth speed
    4.
    发明授权
    Film growth method and film growth apparatus capable of forming magnesium oxide film with increased film growth speed 失效
    能够以增加的膜生长速度形成氧化镁膜的膜生长方法和膜生长装置

    公开(公告)号：US06245394B1

    公开(公告)日：2001-06-12

    申请号：US09006164

    申请日：1998-01-13

    申请人： Toshiyuki Sakemi ,  Masaru Tanaka

    发明人： Toshiyuki Sakemi ,  Masaru Tanaka

    IPC分类号： C23C1408

    CPC分类号： H01J37/32422 ,  C23C14/081 ,  C23C14/325 ,  H01J37/3266

    摘要： An auxiliary anode (30) having a ring-shaped permanent magnet (31) is placed in a vacuum chamber (11) such that the auxiliary anode is coaxial with a central axis of a hearth (20) and is positioned so as to surround an upper area of the hearth. A plasma beam generated by a plasma beam generator (13) using arc discharge is guided into the hearth. Magnesium (Mg) is used as a vaporization material on the hearth. Gas mixed with oxygen is supplied into the vacuum chamber. As a result, magnesium oxide particles sublimated from the hearth react with oxygen plasma generated by the plasma to form a magnesium oxide (MgO) film on a substrate (40).

    摘要翻译： 具有环形永磁体（31）的辅助阳极（30）被放置在真空室（11）中，使得辅助阳极与炉床（20）的中心轴线同轴并且被定位成围绕 炉膛的上部区域。 由等离子体束发生器（13）使用电弧放电产生的等离子体束被引导到炉床中。 镁（Mg）用作炉膛上的蒸发材料。 与氧气混合的气体被供应到真空室中。 结果，从炉床升华的氧化镁颗粒与等离子体产生的氧等离子体反应，在基板（40）上形成氧化镁（MgO）膜。

    Film deposition method for forming copper film
    5.
    发明授权
    Film deposition method for forming copper film 失效
    用于形成铜膜的成膜方法

    公开(公告)号：US06220204B1

    公开(公告)日：2001-04-24

    申请号：US09328414

    申请日：1999-06-09

    申请人： Hiroyuki Makino ,  Masaru Tanaka ,  Kiyoshi Awai ,  Toshiyuki Sakemi

    发明人： Hiroyuki Makino ,  Masaru Tanaka ,  Kiyoshi Awai ,  Toshiyuki Sakemi

    IPC分类号： C23C1432

    CPC分类号： H01J37/3266 ,  C23C14/046 ,  C23C14/14 ,  C23C14/32 ,  H01J37/32357

    摘要： A film deposition apparatus to which the present invention is applied comprises a vacuum chamber 11, a plasma beam generator 13, a main hearth 30 which is disposed within the vacuum chamber and which serves as an anode containing a vaporizable material Cu, and an auxiliary anode 31 surrounding the main hearth, the auxiliary anode being formed of an annular permanent magnet 35 and a coil 36. A Cu film is formed on a substrate 41 placed opposite to the main hearth.

    摘要翻译： 应用本发明的成膜装置包括真空室11，等离子体束发生器13，主炉底30，其设置在真空室内并用作含有可汽化材料Cu的阳极和辅助阳极 辅助阳极由环形永磁体35和线圈36形成。在与主炉底相对设置的基板41上形成有Cu膜。

    Ion plating apparatus
    6.
    发明授权
    Ion plating apparatus 失效
    离子镀装置

    公开(公告)号：US6160350A

    公开(公告)日：2000-12-12

    申请号：US269737

    申请日：1999-06-28

    申请人： Toshiyuki Sakemi ,  Masaru Tanaka

    发明人： Toshiyuki Sakemi ,  Masaru Tanaka

    IPC分类号： C23C14/32 ,  H01J37/32 ,  H01J7/24 ,  H05B31/26

    CPC分类号： H01J37/32623 ,  C23C14/32 ,  H01J37/3266

    摘要： Around hearths 30a and 30b placed inside a vacuum chamber 11, auxiliary hearths 31a and 31b with annular permanent magnets included therein are arranged. Orientations of magnetic poles of annular permanent magnets 21a and 21b provided in two adjacent plasma guns 1A and 2B, orientations of magnetic poles of two adjacent electromagnetic coils 22a and 22b, orientations of two adjacent steering coils 24a and 24b, and orientations of magnetic poles of the two adjacent annular permanent magnets included in the two hearths are reversed from each other.

    摘要翻译： PCT No.PCT / JP97 / 03436。 371日期1999年6月28日第 102（e）1999年6月28日PCT 1997年9月26日PCT公布。 公开号WO99 /​​ 16924 日期1999年4月8日设置在真空室11内的炉底30a和30b，其中包括其中包括环形永磁体的辅助炉床31a和31b。 设置在两个相邻的等离子体枪1A和2B中的环形永磁体21a和21b的磁极的方向，两个相邻的电磁线圈22a和22b的磁极的取向，两个相邻的转向线圈24a和24b的取向，以及两个相邻的电磁线圈的磁极的方向 包括在两个炉膛中的两个相邻的环形永磁体彼此相反。