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39 条记录 (耗时 0.035 秒)

    Plasma system comprising hollow mesh plate electrode
    3.
    发明授权
    Plasma system comprising hollow mesh plate electrode 失效
    等离子体系包括中空网板电极

    公开(公告)号：US5304250A

    公开(公告)日：1994-04-19

    申请号：US909660

    申请日：1992-07-07

    申请人： Toshiyuki Sameshima ,  Masaki Hara ,  Naoki Sano ,  Setsuo Usui

    发明人： Toshiyuki Sameshima ,  Masaki Hara ,  Naoki Sano ,  Setsuo Usui

    IPC分类号： C23C16/50 ,  C23C16/44 ,  C23C16/455 ,  C23C16/509 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31

    CPC分类号： C23C16/45565 ,  C23C16/455 ,  C23C16/45514 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/3244 ,  H01J2237/3325

    摘要： A plasma system which eliminates damage derived from charged particles in the plasma and which is able to perform uniform plasma CVD and plasma etching on a large area substrate, wherein a mesh plate having a plurality of holes is placed at the interface of a plasma generation chamber and a substrate treatment chamber which holds a substrate, a high frequency electrical field being applied between an upper electrode in the plasma generation chamber and the mesh plate so as to disassociate the plasma forming gas by electrodischarge so as to cause the generation of plasma. By this, the plasma is isolated from the substrate. On the other hand, source gas supply ports are opened near the holes of the mesh plate, the source gas being introduced from there being brought into contact with the plasma through the holes, whereby the reaction product can be uniformly produced in a broad area. If the reaction product is a deposit-like substance, plasma CVD becomes possible, while if of the etching type, plasma etching becomes possible.

    摘要翻译： 一种等离子体系统，其消除由等离子体中的带电粒子产生的损伤，并能够在大面积基板上进行均匀的等离子体CVD和等离子体蚀刻，其中具有多个孔的网板被放置在等离子体产生室 以及基板处理室，其保持基板，将高频电场施加在等离子体产生室中的上部电极与网板之间，以通过电放电解除等离子体形成气体，从而产生等离子体。 由此，等离子体与基板隔离。 另一方面，源气体供给口在网板的孔附近打开，从那里引入的源气体通过孔与等离子体接触，从而可以在广泛的区域均匀地制造反应产物。 如果反应产物是沉积物状物质，则可以进行等离子体CVD，而如果是蚀刻型，则可以进行等离子体蚀刻。

    Method of crystallizing a semiconductor thin film
    7.
    发明授权
    Method of crystallizing a semiconductor thin film 失效
    使半导体薄膜结晶的方法

    公开(公告)号：US5145808A

    公开(公告)日：1992-09-08

    申请号：US747708

    申请日：1991-08-20

    申请人： Toshiyuki Sameshima ,  Masaki Hara ,  Naoki Sano ,  Setsuo Usui

    发明人： Toshiyuki Sameshima ,  Masaki Hara ,  Naoki Sano ,  Setsuo Usui

    IPC分类号： H01L21/20 ,  H01L21/268

    CPC分类号： H01L21/2026 ,  Y10S117/904 ,  Y10S148/093 ,  Y10S148/134

    摘要： A method of crystallizing a semiconductor thin film moves a laser beam emitted by a pulse laser in a first direction to irradiate the semiconductor tin film with the laser beam for scanning. The laser beam is split into a plurality of secondary laser beams of a width smaller than the pitch of step feed, respectively having different energy densities forming a stepped energy density distribution decreasing from the middle toward the opposite ends thereof with respect to the direction of step feed. The energy density of the first secondary laser beam corresponding to the middle of the energy distribution is higher than a threshold energy density, i.e., the minimum energy density that will melt the semiconductor thin film to make the same amorphous, and lower than a roughening energy density, i.e., the minimum energy density that will roughen the surface of the semiconductor thin film, the energy density of each of the secondary laser beams on the front side of the first secondary laser beam with respect to the direction of step feed is lower than a melting energy density, i.e., the minimum energy density of each of the secondary laser beams on the back side of the first secondary laser beam with respect to the direction of step feed is higher than the melting energy density and lower than and nearly equal to the threshold energy density.

    摘要翻译： 使半导体薄膜结晶的方法使由脉冲激光器发射的激光沿第一方向移动，以用激光束照射半导体锡膜进行扫描。 激光束被分成多个宽度小于阶梯进给节距的次级激光束，分别具有不同的能量密度，形成阶梯能量密度分布，相对于台阶方向从中间向相对端减小 饲料。 对应于能量分布中间的第一次级激光束的能量密度高于阈值能量密度，即将熔化半导体薄膜以使其成为相同无定形且低于粗糙能量的最小能量密度 密度，即将使粗糙化半导体薄膜的表面的最小能量密度，相对于步进进给方向，第一次级激光束正面上的每个次级激光束的能量密度低于 熔融能量密度，即第一次级激光束的背侧上的每个次级激光束相对于步进进给方向的最小能量密度高于熔融能量密度，并且低于并且几乎等于 阈值能量密度。

    Process of manufacturing semiconductor device
    9.
    发明授权
    Process of manufacturing semiconductor device 有权
    制造半导体器件的工艺

    公开(公告)号：US06458715B2

    公开(公告)日：2002-10-01

    申请号：US09779766

    申请日：2001-02-08

    申请人： Naoki Sano ,  Masaki Hara ,  Mitsunobu Sekiya ,  Toshiyuki Sameshima

    发明人： Naoki Sano ,  Masaki Hara ,  Mitsunobu Sekiya ,  Toshiyuki Sameshima

    IPC分类号： H01L21265

    CPC分类号： H01L21/3105 ,  H01L31/1864 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S438/909

    摘要： A target semiconductor device can be obtained stably by reforming an insulating film and a semiconductor. In a process of manufacturing a semiconductor device, at least one of the semiconductor and the insulating film is reformed after an annealing process for annealing the semiconductor at a temperature ranging from 20 to 400° C. in the atmosphere containing a gas of water (H2O) with a partial pressure from 1 Torr to a saturated vapor pressure for an annealing time ranging from 15 seconds to 20 hours.

    摘要翻译： 可以通过重整绝缘膜和半导体来稳定地获得目标半导体器件。 在制造半导体器件的过程中，在包含水气体（H 2 O）的气氛中，在20〜400℃的温度范围内退火半导体的退火处理后，半导体和绝缘膜中的至少一个被重整 ），分压为1乇至饱和蒸汽压，退火时间为15秒至20小时。

    Process of manufacturing semiconductor devices
    10.
    发明授权
    Process of manufacturing semiconductor devices 失效
    制造半导体器件的工艺

    公开(公告)号：US06291366B1

    公开(公告)日：2001-09-18

    申请号：US08515068

    申请日：1995-08-14

    申请人： Naoki Sano ,  Masaki Hara ,  Mitsunobu Sekiya ,  Toshiyuki Sameshima

    发明人： Naoki Sano ,  Masaki Hara ,  Mitsunobu Sekiya ,  Toshiyuki Sameshima

    IPC分类号： H01L2131

    CPC分类号： H01L21/3105 ,  H01L31/1864 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S438/909

    摘要： A target semiconductor device can be obtained stably by reforming an insulating film and a semiconductor. In a process of manufacturing a semiconductor device, at least one of the semiconductor and the insulating film is reformed after an annealing process for annealing the semiconductor at a temperature ranging from 20 to 400° C. in the atmosphere containing a gas of water (H2O) with a partial pressure from 1 Torr to a saturated vapor pressure for an annealing time ranging from 15 seconds to 20 hours.

    摘要翻译： 可以通过重整绝缘膜和半导体来稳定地获得目标半导体器件。 在制造半导体器件的过程中，在包含水气体（H 2 O）的气氛中，在20〜400℃的温度范围内退火半导体的退火处理后，半导体和绝缘膜中的至少一个被重整 ），分压为1乇至饱和蒸汽压，退火时间为15秒至20小时。