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    Plasma system comprising hollow mesh plate electrode
    3.
    发明授权
    Plasma system comprising hollow mesh plate electrode 失效
    等离子体系包括中空网板电极

    公开(公告)号：US5304250A

    公开(公告)日：1994-04-19

    申请号：US909660

    申请日：1992-07-07

    申请人： Toshiyuki Sameshima ,  Masaki Hara ,  Naoki Sano ,  Setsuo Usui

    发明人： Toshiyuki Sameshima ,  Masaki Hara ,  Naoki Sano ,  Setsuo Usui

    IPC分类号： C23C16/50 ,  C23C16/44 ,  C23C16/455 ,  C23C16/509 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31

    CPC分类号： C23C16/45565 ,  C23C16/455 ,  C23C16/45514 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/3244 ,  H01J2237/3325

    摘要： A plasma system which eliminates damage derived from charged particles in the plasma and which is able to perform uniform plasma CVD and plasma etching on a large area substrate, wherein a mesh plate having a plurality of holes is placed at the interface of a plasma generation chamber and a substrate treatment chamber which holds a substrate, a high frequency electrical field being applied between an upper electrode in the plasma generation chamber and the mesh plate so as to disassociate the plasma forming gas by electrodischarge so as to cause the generation of plasma. By this, the plasma is isolated from the substrate. On the other hand, source gas supply ports are opened near the holes of the mesh plate, the source gas being introduced from there being brought into contact with the plasma through the holes, whereby the reaction product can be uniformly produced in a broad area. If the reaction product is a deposit-like substance, plasma CVD becomes possible, while if of the etching type, plasma etching becomes possible.

    摘要翻译： 一种等离子体系统，其消除由等离子体中的带电粒子产生的损伤，并能够在大面积基板上进行均匀的等离子体CVD和等离子体蚀刻，其中具有多个孔的网板被放置在等离子体产生室 以及基板处理室，其保持基板，将高频电场施加在等离子体产生室中的上部电极与网板之间，以通过电放电解除等离子体形成气体，从而产生等离子体。 由此，等离子体与基板隔离。 另一方面，源气体供给口在网板的孔附近打开，从那里引入的源气体通过孔与等离子体接触，从而可以在广泛的区域均匀地制造反应产物。 如果反应产物是沉积物状物质，则可以进行等离子体CVD，而如果是蚀刻型，则可以进行等离子体蚀刻。

    Method of crystallizing a semiconductor thin film
    6.
    发明授权
    Method of crystallizing a semiconductor thin film 失效
    使半导体薄膜结晶的方法

    公开(公告)号：US5145808A

    公开(公告)日：1992-09-08

    申请号：US747708

    申请日：1991-08-20

    申请人： Toshiyuki Sameshima ,  Masaki Hara ,  Naoki Sano ,  Setsuo Usui

    发明人： Toshiyuki Sameshima ,  Masaki Hara ,  Naoki Sano ,  Setsuo Usui

    IPC分类号： H01L21/20 ,  H01L21/268

    CPC分类号： H01L21/2026 ,  Y10S117/904 ,  Y10S148/093 ,  Y10S148/134

    摘要： A method of crystallizing a semiconductor thin film moves a laser beam emitted by a pulse laser in a first direction to irradiate the semiconductor tin film with the laser beam for scanning. The laser beam is split into a plurality of secondary laser beams of a width smaller than the pitch of step feed, respectively having different energy densities forming a stepped energy density distribution decreasing from the middle toward the opposite ends thereof with respect to the direction of step feed. The energy density of the first secondary laser beam corresponding to the middle of the energy distribution is higher than a threshold energy density, i.e., the minimum energy density that will melt the semiconductor thin film to make the same amorphous, and lower than a roughening energy density, i.e., the minimum energy density that will roughen the surface of the semiconductor thin film, the energy density of each of the secondary laser beams on the front side of the first secondary laser beam with respect to the direction of step feed is lower than a melting energy density, i.e., the minimum energy density of each of the secondary laser beams on the back side of the first secondary laser beam with respect to the direction of step feed is higher than the melting energy density and lower than and nearly equal to the threshold energy density.

    摘要翻译： 使半导体薄膜结晶的方法使由脉冲激光器发射的激光沿第一方向移动，以用激光束照射半导体锡膜进行扫描。 激光束被分成多个宽度小于阶梯进给节距的次级激光束，分别具有不同的能量密度，形成阶梯能量密度分布，相对于台阶方向从中间向相对端减小 饲料。 对应于能量分布中间的第一次级激光束的能量密度高于阈值能量密度，即将熔化半导体薄膜以使其成为相同无定形且低于粗糙能量的最小能量密度 密度，即将使粗糙化半导体薄膜的表面的最小能量密度，相对于步进进给方向，第一次级激光束正面上的每个次级激光束的能量密度低于 熔融能量密度，即第一次级激光束的背侧上的每个次级激光束相对于步进进给方向的最小能量密度高于熔融能量密度，并且低于并且几乎等于 阈值能量密度。

    Method of forming a semiconductor thin film on a plastic substrate
    9.
    发明授权
    Method of forming a semiconductor thin film on a plastic substrate 失效
    在塑料基板上形成半导体薄膜的方法

    公开(公告)号：US06376290B1

    公开(公告)日：2002-04-23

    申请号：US09116119

    申请日：1998-07-16

    申请人： Dharam Pal Gosain ,  Jonathan Westwater ,  Miyako Nakagoe ,  Setsuo Usui ,  Kazumasa Nomoto

    发明人： Dharam Pal Gosain ,  Jonathan Westwater ,  Miyako Nakagoe ,  Setsuo Usui ,  Kazumasa Nomoto

    IPC分类号： H01L2100

    CPC分类号： H01L29/66765 ,  H01L29/78603

    摘要： A method is provided for forming a semiconductor thin film which is free from damage to the film with radiation of a pulse laser beam with the optimum energy value for perfect polycrystallization. For forming an amorphous silicon thin film, a surface of a plastic substrate as a base and insulating layers are each radiated with a pulse laser beam for removing volatile contaminants like a resist as a pretreatment. Damage to the film caused by a gas emitted from the base substrate and the insulating layers resulting from volatile contaminants is thus prevented. A protective layer including a gas barrier layer and a refractory buffer layer is formed on the substrate. Gas penetration from the substrate to the amorphous silicon film is thereby prevented. Conduction of heat produced by energy beam radiation to the substrate is prevented as well. It is possible to increase energy intensity of energy beam radiated for polycrystallization of the amorphous silicon film to the optimal value for perfect polycrystallization.

    摘要翻译： 提供了一种用于形成半导体薄膜的方法，该半导体薄膜不会损坏具有用于完美多晶化的最佳能量值的脉冲激光束的辐射。 为了形成非晶硅薄膜，以用作去除挥发性污染物如抗蚀剂的脉冲激光束作为基底和绝缘层的塑料基板的表面各自辐射，作为预处理。 因此防止了由基底衬底发出的气体和由挥发性污染物引起的绝缘层引起的膜损伤。 在基板上形成包括阻气层和难熔缓冲层的保护层。 从而防止了从基板到非晶硅膜的气体渗透。 也可以防止能量束辐射产生的热量传导到基板上。 可以将非晶硅膜的多晶化辐射的能量束的能量强度提高到完美多晶化的最佳值。

    Memory device and method of manufacturing the same, and integrated circuit and method of manufacturing semiconductor device
    10.
    发明授权
    Memory device and method of manufacturing the same, and integrated circuit and method of manufacturing semiconductor device 有权
    存储器件及其制造方法，以及半导体器件的集成电路及其制造方法

    公开(公告)号：US06285055B1

    公开(公告)日：2001-09-04

    申请号：US09381987

    申请日：1999-11-29

    申请人： Dharam Pal Gosain ,  Kazumasa Nomoto ,  Jonathan Westwater ,  Miyako Nakagoe ,  Setsuo Usui ,  Takashi Noguchi ,  Yoshifumi Mori

    发明人： Dharam Pal Gosain ,  Kazumasa Nomoto ,  Jonathan Westwater ,  Miyako Nakagoe ,  Setsuo Usui ,  Takashi Noguchi ,  Yoshifumi Mori

    IPC分类号： H01L29788

    CPC分类号： B82Y10/00 ,  H01L21/28273 ,  H01L21/8221 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/7883 ,  H01L29/792

    摘要： While a storage region 15 has of many dispersed particulates (dots) (15a), the surface density of the particulates (15a) is set to be higher than that of structural holes (pin holes) produced in a tunnel insulating film (14a), or the number of the particulates (15a) in the storage region (15) is set to five or more. While a conduction region (13c) is formed by a polysilicon layer (13) having a surface roughness of 0.1 nm to 100 nm, the number of the particulates (15a) in the storage region (15) is set to be larger than the number of crystal grains in the conduction region (13c). Even when a defect such as a pin hole occurs in the tunnel insulating film (14a) and charges stored in a part of the particulates are leaked, the charges stored in the particulates formed in a region where no defect occurs are not leaked. Thus, information can be held for a long time.

    摘要翻译： 虽然存储区域15具有许多分散的微粒（点）（15a），但是微粒（15a）的表面密度被设定为高于在隧道绝缘膜（14a）中产生的结构孔（针孔）的表面密度， 或存储区域（15）中的微粒（15a）的数量设定为五个以上。 虽然通过表面粗糙度为0.1nm至100nm的多晶硅层（13）形成导电区域（13c），但存储区域（15）中的微粒（15a）的数量被设定为大于数字 的导电区域（13c）中的晶粒。 即使当在隧道绝缘膜（14a）中出现诸如针孔的缺陷，并且存储在一部分微粒中的电荷泄漏时，存储在形成于不发生缺陷的区域中的微粒中的电荷也不会泄漏。 因此，信息可以持续很长时间。