公开(公告)号：US20070134917A1

公开(公告)日：2007-06-14

申请号：US11301917

申请日：2005-12-13

申请人： Tsai-Chun Li ,  Tsang-Jiuh Wu ,  Hui Ouyang

发明人： Tsai-Chun Li ,  Tsang-Jiuh Wu ,  Hui Ouyang

IPC分类号： H01L21/4763

CPC分类号： H01L21/76808 ,  H01L21/7681 ,  H01L21/76813

摘要： A partial-via-first dual-damascene method using a tri-layer resist method forms a first via hole through partial thickness of a dielectric layer, and forms a tri-layer resist structure on the dielectric layer to fill the first via hole with the bottom photoresist layer. A dry development process is performed to transfer a first opening on the top photoresist layer to the middle layer and the bottom photoresist layer, and expose the first via hole again, and remove the top photoresist layer. A dry etching process is then performed to form a second via hole under the first via hole and a trench over the second via hole. Finally a wet striping process is used to remove the remainder of the photoresist layer.

摘要翻译： 使用三层抗蚀剂法的部分通孔 - 第一双镶嵌法通过介电层的部分厚度形成第一通孔，并在介电层上形成三层抗蚀剂结构，以填充第一通孔 底部光刻胶层。 进行干式显影处理以将顶部光致抗蚀剂层上的第一开口转移到中间层和底部光致抗蚀剂层，并再次暴露第一通孔，并除去顶部光致抗蚀剂层。 然后执行干蚀刻工艺以在第一通孔下方形成第二通孔，并在第二通孔上形成沟槽。 最后，使用湿条纹工艺去除光致抗蚀剂层的其余部分。

公开(公告)号：US20070004193A1

公开(公告)日：2007-01-04

申请号：US11173275

申请日：2005-07-01

申请人： Tsang-Jiuh Wu ,  Chen-Nan Yeh ,  Dean Li ,  Hui Ouyang

发明人： Tsang-Jiuh Wu ,  Chen-Nan Yeh ,  Dean Li ,  Hui Ouyang

IPC分类号： H01L21/4763

CPC分类号： H01L21/76808

摘要： A new method of forming a dual damascene structure involves forming a via-level precursor structure on a substrate and spin coating an oxide protective layer over the bottom anti-reflective coating, which is the last layer of the via-level precursor structure. A trench-level photoresist layer is deposited over the oxide protective layer to form a trench pattern etch mask. The oxide protective layer protects the BARC layer and the via plugs from photoresist removing process. When and if the trench-level photoresist layer is to be reworked, the trench-level photoresist layer is simply removed without removing the BARC layer and the via plugs under the oxide protective layer.

摘要翻译： 形成双镶嵌结构的新方法包括在基底上形成通孔级前体结构，并在作为通孔级前体结构的最后一层的底部抗反射涂层上旋转涂覆氧化物保护层。 沟槽级光致抗蚀剂层沉积在氧化物保护层上以形成沟槽图案蚀刻掩模。 氧化物保护层保护BARC层和通孔插塞免受光致抗蚀剂的去除。 当沟槽层光致抗蚀剂层要被再加工时，沟槽层光致抗蚀剂层被简单地去除，而不去除氧化物保护层下的BARC层和通孔塞。

公开(公告)号：US08569185B2

公开(公告)日：2013-10-29

申请号：US12700862

申请日：2010-02-05

申请人： Matt Yeh ,  Hui Ouyang ,  Han-Pin Chung ,  Shiang-Bau Wang

发明人： Matt Yeh ,  Hui Ouyang ,  Han-Pin Chung ,  Shiang-Bau Wang

IPC分类号： H01L21/31 ,  H01L21/469 ,  H01L21/8238 ,  H01L21/425 ,  H01L21/3205 ,  H01L21/4763 ,  H01L21/44 ,  H01L21/027

CPC分类号： H01L21/823807 ,  H01L21/26586 ,  H01L21/823814 ,  H01L21/823828 ,  H01L29/1083 ,  H01L29/165 ,  H01L29/66628 ,  H01L29/7834 ,  H01L29/7848

摘要： A method for fabricating an integrated device is disclosed. In an embodiment, a hard mask layer with a limited thickness is formed over a gate electrode layer. A treatment is provided to the hard mask layer to make the hard mask layer more resistant to a wet etch solution. Then, a patterning is provided on the treated hard mask layer and the gate electrode to from a gate structure.

摘要翻译： 公开了一种用于制造集成器件的方法。 在一个实施例中，在栅极电极层上形成具有有限厚度的硬掩模层。 向硬掩模层提供处理以使硬掩模层对湿蚀刻溶液更具抗性。 然后，在经处理的硬掩模层和栅电极上提供从栅极结构构图。

公开(公告)号：US08563410B2

公开(公告)日：2013-10-22

申请号：US12625957

申请日：2009-11-25

申请人： Li-Te S. Lin ,  Meng Jun Wang ,  Ya Hui Chang ,  Hui Ouyang

发明人： Li-Te S. Lin ,  Meng Jun Wang ,  Ya Hui Chang ,  Hui Ouyang

IPC分类号： H01L21/3205

CPC分类号： H01L21/28026 ,  H01L21/28008 ,  H01L21/28123 ,  H01L21/32139 ,  H01L22/12 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for fabricating a semiconductor device is disclosed. The method includes forming at least one material layer over a substrate; performing an end-cut patterning process to form an end-cut pattern overlying the at least one material layer; transferring the end-cut pattern to the at least one material layer; performing a line-cut patterning process after the end-cut patterning process to form a line-cut pattern overlying the at least one material layer; and transferring the line-cut pattern to the at least one material layer.

公开(公告)号：US08173504B2

公开(公告)日：2012-05-08

申请号：US12758491

申请日：2010-04-12

申请人： Matt Yeh ,  Fan-Yi Hsu ,  Shun Wu Lin ,  Hui Ouyang ,  Chi-Ming Yang

发明人： Matt Yeh ,  Fan-Yi Hsu ,  Shun Wu Lin ,  Hui Ouyang ,  Chi-Ming Yang

IPC分类号： H01L21/8238

CPC分类号： H01L21/823828 ,  H01L21/26513 ,  H01L21/26586 ,  H01L21/28035 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823842 ,  H01L29/165 ,  H01L29/4916 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7834 ,  H01L29/7848

摘要： A method for fabricating an integrated device is disclosed. A polysilicon gate electrode layer is provided on a substrate. In an embodiment, a treatment is provided on the polysilicon gate electrode layer to introduce species in the gate electrode layer and form an electrically neutralized portion therein. Then, a hard mask layer with limited thickness is applied on the treated polysilicon gate electrode layer. A tilt angle ion implantation is thus performing on the substrate after patterning the hard mask layer and the treated polysilicon gate electrode to from a gate structure.

摘要翻译： 公开了一种用于制造集成器件的方法。 在基板上设置多晶硅栅电极层。 在一个实施例中，在多晶硅栅极电极层上提供处理以在栅电极层中引入物质并在其中形成电中和部分。 然后，将具有有限厚度的硬掩模层施加在经处理的多晶硅栅极电极层上。 因此，在将硬掩模层和经处理的多晶硅栅电极图案化之后，在栅极结构上对基板进行倾斜角度离子注入。

公开(公告)号：US20120083088A1

公开(公告)日：2012-04-05

申请号：US13240025

申请日：2011-09-22

申请人： Ming-Hsuan Tsai ,  Chun-Fai Cheng ,  Hui Ouyang ,  Yuan-Hung Chiu ,  Yen-Ming Chen

发明人： Ming-Hsuan Tsai ,  Chun-Fai Cheng ,  Hui Ouyang ,  Yuan-Hung Chiu ,  Yen-Ming Chen

IPC分类号： H01L21/336

CPC分类号： H01L29/66515 ,  H01L21/265 ,  H01L21/26586 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/6656 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7848

摘要： An integrated circuit device and method for manufacturing the integrated circuit device is disclosed. The disclosed method provides improved control over a surface proximity and tip depth of integrated circuit device. In an embodiment, the method achieves improved control by forming a doped region and a lightly doped source and drain (LDD) region in a source and drain region of the device. The doped region is implanted with a dopant type opposite the LDD region.

摘要翻译： 公开了一种用于制造集成电路器件的集成电路器件和方法。 所公开的方法提供对集成电路器件的表面接近度和尖端深度的改进的控制。 在一个实施例中，该方法通过在器件的源极和漏极区域中形成掺杂区域和轻掺杂源极和漏极（LDD）区域来实现改进的控制。 掺杂区域注入与LDD区域相反的掺杂剂类型。

公开(公告)号：US20110246443A1

公开(公告)日：2011-10-06

申请号：US13079434

申请日：2011-04-04

申请人： Sachin Bhatkar ,  Meeten Bhavsar ,  Mark Davis ,  Joaquin Delgado ,  Cindy Hsin ,  Muralidhar Krishnaprasad ,  Hui Ouyang

发明人： Sachin Bhatkar ,  Meeten Bhavsar ,  Mark Davis ,  Joaquin Delgado ,  Cindy Hsin ,  Muralidhar Krishnaprasad ,  Hui Ouyang

IPC分类号： G06F17/30

CPC分类号： G06F21/6218 ,  G06F21/31 ,  G06F2221/2115 ,  H04L63/105

摘要： A flexible and extensible architecture allows for secure searching across an enterprise. Such an architecture can provide a simple Internet-like search experience to users searching secure content inside (and outside) the enterprise. The architecture allows for the crawling and searching of a variety of sources across an enterprise, regardless of whether any of these sources conform to a conventional user role model. The architecture further allows for security attributes to be submitted at query time, for example, in order to provide real-time secure access to enterprise resources. The user query also can be transformed to provide for dynamic querying that provides for a more current result list than can be obtained for static queries.

摘要翻译： 灵活可扩展的架构允许跨企业进行安全搜索。 这样的架构可以为在企业内部（和外部）搜索安全内容的用户提供简单的类似Internet的搜索体验。 该架构允许在整个企业中爬行和搜索各种源，而不管这些源是否符合常规用户角色模型。 该体系结构进一步允许在查询时提交安全属性，例如为了提供对企业资源的实时安全访问。 用户查询也可以被转换以提供动态查询，其提供比静态查询可获得的更多当前结果列表。

公开(公告)号：US20110124134A1

公开(公告)日：2011-05-26

申请号：US12625957

申请日：2009-11-25

申请人： Li-Te S. Lin ,  Meng Jun Wang ,  Ya Hui Chang ,  Hui Ouyang

发明人： Li-Te S. Lin ,  Meng Jun Wang ,  Ya Hui Chang ,  Hui Ouyang

IPC分类号： H01L21/66 ,  H01L21/302

CPC分类号： H01L21/28026 ,  H01L21/28008 ,  H01L21/28123 ,  H01L21/32139 ,  H01L22/12 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for fabricating a semiconductor device is disclosed. The method includes forming at least one material layer over a substrate; performing an end-cut patterning process to form an end-cut pattern overlying the at least one material layer; transferring the end-cut pattern to the at least one material layer; performing a line-cut patterning process after the end-cut patterning process to form a line-cut pattern overlying the at least one material layer; and transferring the line-cut pattern to the at least one material layer.

摘要翻译： 公开了一种制造半导体器件的方法。 该方法包括在衬底上形成至少一个材料层; 执行端切割图案化工艺以形成覆盖所述至少一个材料层的端部切割图案; 将所述切割图案转印到所述至少一个材料层; 在切割图案化工艺之后进行线切割图案化工艺以形成覆盖至少一个材料层的线切割图案; 以及将所述切线图案转移到所述至少一个材料层。

公开(公告)号：US20100240204A1

公开(公告)日：2010-09-23

申请号：US12719532

申请日：2010-03-08

申请人： Matt YEH ,  Shun Wu Lin ,  Hui Ouyang

发明人： Matt YEH ,  Shun Wu Lin ,  Hui Ouyang

IPC分类号： H01L21/28 ,  H01L21/302 ,  B08B3/00

CPC分类号： H01L21/02068 ,  H01L21/823842 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545

摘要： A method for cleaning a diffusion barrier over a gate dielectric of a metal-gate transistor over a substrate is provided. The method includes cleaning the diffusion barrier with a first solution including at least one surfactant. The amount of the surfactant of the first solution is about a critical micelle concentration (CMC) or more. The diffusion barrier is cleaned with a second solution. The second solution has a physical force to remove particles over the diffusion barrier. The second solution is substantially free from interacting with the diffusion barrier.

摘要翻译： 提供了一种在衬底上清洁金属栅极晶体管的栅极电介质上的扩散阻挡层的方法。 该方法包括用包含至少一种表面活性剂的第一溶液清洗扩散阻挡层。 第一溶液的表面活性剂的量约为临界胶束浓度（CMC）或更高。 扩散阻挡层用第二种溶液清洗。 第二种解决方案具有去除扩散阻挡层上的颗粒的物理力。 第二溶液基本上不与扩散阻挡层相互作用。

公开(公告)号：US20070208755A1

公开(公告)日：2007-09-06

申请号：US11680550

申请日：2007-02-28

申请人： Sachin Bhatkar ,  Meeten Bhavsar ,  Mark Davis ,  Joaquin Delgado ,  Cindy Hsin ,  Muralidhar Krishnaprasad ,  Hui Ouyang

发明人： Sachin Bhatkar ,  Meeten Bhavsar ,  Mark Davis ,  Joaquin Delgado ,  Cindy Hsin ,  Muralidhar Krishnaprasad ,  Hui Ouyang

IPC分类号： G06F17/30

CPC分类号： G06F21/6218 ,  G06F21/31 ,  G06F2221/2115 ,  H04L63/105

摘要： A flexible and extensible architecture allows for secure searching across an enterprise. Such an architecture can provide a simple Internet-like search experience to users searching secure content inside (and outside) the enterprise. The architecture allows for the crawling and searching of a variety or sources across an enterprise, regardless of whether any of these sources conform to a conventional user role model. The architecture further allows for security attributes to be submitted at query time, for example, in order to provide real-time secure access to enterprise resources. The user query also can be transformed to provide for dynamic querying that provides for a more current result list than can be obtained for static queries.

摘要翻译： 灵活可扩展的架构允许跨企业进行安全搜索。 这样的架构可以为在企业内部（和外部）搜索安全内容的用户提供简单的类似Internet的搜索体验。 该架构允许在整个企业中爬行和搜索各种或多个源，无论这些源是否符合常规用户角色模型。 该体系结构进一步允许在查询时提交安全属性，例如为了提供对企业资源的实时安全访问。 用户查询也可以被转换以提供动态查询，其提供比静态查询可获得的更多当前结果列表。