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    Luminous material for scintillator comprising single crystal of Yb mixed crystal oxide
    1.
    发明授权
    Luminous material for scintillator comprising single crystal of Yb mixed crystal oxide 有权
    用于闪烁体的发光材料包括Yb混合晶体氧化物的单晶

    公开(公告)号：US07347956B2

    公开(公告)日：2008-03-25

    申请号：US10509425

    申请日：2003-03-25

    申请人： Tsuguo Fukuda ,  Akira Yoshikawa ,  Takashi Tsuzaki

    发明人： Tsuguo Fukuda ,  Akira Yoshikawa ,  Takashi Tsuzaki

    IPC分类号： C09K11/80 ,  C09K11/78

    CPC分类号： C30B15/08 ,  C09K11/7769 ,  C09K11/7774 ,  C09K11/778 ,  C30B29/22 ,  C30B29/28 ,  G21K4/00

    摘要： Disclosed is a luminescent material for scintillators, which comprises a single crystal of an Yb-containing mixed-crystal oxide having a base crystal consisting of a garnet single crystal or a borate single crystal. The oxide single crystal has a composition represented by either one selected from the group consisting of R3Al5O12, R3Ga5O12, Li6R(BO3)3, LaR2Ga3O12 and Gd3R2Ga3O12, wherein R is a mixture of Yb and either one of Y, Gd and Lu. The Yb as an element capable of forming an optically active state called CTS together with a neighboring negative ion (oxygen ion).

    摘要翻译： 公开了一种用于闪烁体的发光材料，其包含具有由石榴石单晶或硼酸盐单晶构成的基础晶体的含Yb的混合氧化物的单晶。 氧化物单晶具有由选自由R 3，R 3，R 2，R 3，R 3， 5/2，5，6，6，6，12，13， ，La 2 O 3，Ga 3 O 12和Ga 3 R 2 Ga 其中R是Yb和Y，Gd和Lu中的任一种的混合物。 作为能够与相邻的负离子（氧离子）一起形成称为CTS的光学活性状态的元素的Yb。

    METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR, CRYSTAL GROWTH RATE INCREASING AGENT, SINGLE CRYSTAL NITRIDE, WAFER AND DEVICE
    3.
    发明申请
    METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR, CRYSTAL GROWTH RATE INCREASING AGENT, SINGLE CRYSTAL NITRIDE, WAFER AND DEVICE 审中-公开
    生产氮化物半导体的方法，晶体生长速率增加剂，单晶氮化物，晶体和器件

    公开(公告)号：US20100104495A1

    公开(公告)日：2010-04-29

    申请号：US12444847

    申请日：2007-10-10

    申请人： Shinichiro Kawabata ,  Hirohisa Itoh ,  Dirk Ehrentraut ,  Yuji Kagamitani ,  Akira Yoshikawa ,  Tsuguo Fukuda

    发明人： Shinichiro Kawabata ,  Hirohisa Itoh ,  Dirk Ehrentraut ,  Yuji Kagamitani ,  Akira Yoshikawa ,  Tsuguo Fukuda

    IPC分类号： C30B9/00 ,  C01F11/20 ,  C01B21/06

    CPC分类号： C30B29/403 ,  C30B7/10 ,  C30B29/406

    摘要： A method for producing a nitride semiconductor, comprising controlling temperature and pressure in a autoclave containing a seed having a hexagonal crystal structure, a nitrogen element-containing solvent, a raw material substance containing a metal element of Group 13 of the Periodic Table, and a mineralizer so as to put said solvent into a supercritical state and/or a subcritical state and thereby ammonothermally grow a nitride semiconductor crystal on the surface of said seed, wherein the crystal growth rate in the m-axis direction on said seed is 1.5 times or more the crystal growth rate in the c-axis direction on said seed. By the method, a nitride semiconductor having a large-diameter C plane or a nitride semiconductor thick in the m-axis direction can be efficiently and simply produced.

    摘要翻译： 一种氮化物半导体的制造方法，包括控制含有六方晶系结晶种子的高压釜中的温度和压力，含氮元素的溶剂，含有元素周期表第13族金属元素的原料物质，以及 使所述溶剂处于超临界状态和/或亚临界状态，从而在所述种子的表面上氨氮化物半导体晶体生长，其中所述种子上的m轴方向的晶体生长速率为1.5倍或 更多的是在所述种子上的c轴方向上的晶体生长速率。 通过该方法，可以有效且简单地制造具有大直径C面的氮化物半导体或在m轴方向上厚的氮化物半导体。

    Pulling-down apparatus and container therefor
    7.
    发明申请
    Pulling-down apparatus and container therefor 失效
    下拉装置和容器

    公开(公告)号：US20060185580A1

    公开(公告)日：2006-08-24

    申请号：US11336840

    申请日：2006-01-23

    申请人： Kazushige Tohta ,  Kou Onodera ,  Takeshi Ito ,  Tsuguo Fukuda ,  Akira Yoshikawa

    发明人： Kazushige Tohta ,  Kou Onodera ,  Takeshi Ito ,  Tsuguo Fukuda ,  Akira Yoshikawa

    IPC分类号： C30B11/00 ,  C30B17/00 ,  C30B9/00 ,  C30B21/02 ,  C30B28/06

    CPC分类号： C30B15/08 ,  Y10S117/902 ,  Y10T117/1012 ,  Y10T117/1064 ,  Y10T117/1072

    摘要： It is an object of the present invention to provide a pulling-down apparatus that can breed a crystal having good characteristics of scintillation. The apparatus retains in a container that can control an atmosphere a melting pot having a narrow hole at the bottom side thereof, an induction heating device, and a seed-holding device that holds a seed and is pulled down so that a crystal formed successively to the seed is pulled down. Concurrently, imaging devices are arranged that can pick up images of a solid-liquid interface between the crystal and a melt material, from different directions, and the seed-holding device can be travel along directions perpendicular to respective image pickup directions in a horizontal plane.

    摘要翻译： 本发明的目的是提供一种可以培养具有良好闪烁特性的晶体的下拉装置。 该装置保持在容器中，该容器能够控制其底侧具有窄孔的熔池，感应加热装置和保持种子并被拉下的种子保持装置，使得晶体依次形成为 种子被拉下来。 同时，成像装置被布置成可以从不同的方向拾取晶体和熔体材料之间的固液界面的图像，并且种子保持装置可以沿着垂直于水平面中的各个图像拾取方向的方向行进 。

    Zno single crystal as super high speed scintillator...
    8.
    发明申请
    Zno single crystal as super high speed scintillator... 审中-公开
    Zno单晶作为超高速闪烁体

    公开(公告)号：US20070193499A1

    公开(公告)日：2007-08-23

    申请号：US11569350

    申请日：2005-05-20

    申请人： Tsuguo Fukuda ,  Akira Yoshikawa ,  Hiraku Ogino

    发明人： Tsuguo Fukuda ,  Akira Yoshikawa ,  Hiraku Ogino

    IPC分类号： H01L21/322

    CPC分类号： G21K4/00 ,  C09K11/565 ,  C09K11/595 ,  C09K11/623 ,  C09K11/642 ,  C09K11/662 ,  C09K11/7702 ,  C30B29/16 ,  C30B33/00

    摘要： To find out a crystalline material for a high speed scintillator in place of BaF2 and the like, and a method for producing the material at a low cost. A single crystal of (Zn1−xMx)O1+x (M: Al, Ga, In, Y, Sc, La, Gd, Lu) (x=0 to 0.0500), (Zn1−xM′x)O1+2x(M′: Si, Ge, Sn, Pb)(x=0 to 0.0250) or (Zn1−xCdx)O (x=0 to 0.0500) is used as a scintillator. Defects of a ZnO single crystal can be reduced by using a platinum inner cylinder in order for a solution not to directly contact with an autoclave, for reducing impurities in the ZnO single crystal and precluding impurities interfering with scintillation, and by using LiOH and KOH as a mineralizer. ZnO can be doped with Al2O3, Ga2O3, In2O3, Si, Cd or the like by adding those materials to a starting material for the hydrothermal synthesis. The doping amounts can be controlled by changing charging amounts thereof. The doping of those elements inhibits the emission of visible lights, which results in the efficient transformation of the excitation energy to the luminescence from a free exciton.

    摘要翻译： 找出代替BaF 2等的高速闪烁体的结晶材料，以及低成本地制造材料的方法。 （Zn 1-x M x O）O 1 + x（M：Al，Ga，In，Y，Sc， La，Gd，Lu）（x = 0〜0.0500），（Zn 1-x M'x X）O 1 + 2x（M 使用Si，Ge，Sn，Pb）（x = 0〜0.0250）或（Zn 1-x S x x x）O（x = 0〜0.0500） 作为闪烁体。 可以通过使用铂内筒来降低ZnO单晶的缺陷，以使溶液不与高压釜直接接触，以减少ZnO单晶中的杂质并排除杂质干扰闪烁，并且通过使用LiOH和KOH作为 矿化剂 ZnO可以掺杂有Al 2 O 3，Ga 2 O 3 3，In 2 O 3， 通过将这些材料加入到用于水热合成的起始材料中，将其加入到Si 3 O 3，Si 3，Cd 3等中。 可以通过改变其充电量来控制掺杂量。 这些元素的掺杂抑制可见光的发射，这导致激发能量有效地从游离激子转变为发光。

    Process for producing single crystal of gallium-containing nitride
    9.
    发明申请
    Process for producing single crystal of gallium-containing nitride 审中-公开
    含镓氮化物单晶的制造方法

    公开(公告)号：US20070175383A1

    公开(公告)日：2007-08-02

    申请号：US10586581

    申请日：2005-01-20

    申请人： Tsuguo Fukuda ,  Ehrentraut Dirk ,  Akira Yoshikawa

    发明人： Tsuguo Fukuda ,  Ehrentraut Dirk ,  Akira Yoshikawa

    IPC分类号： C30B15/00 ,  C30B19/00 ,  C30B21/06

    CPC分类号： C30B11/14 ,  C30B17/00 ,  C30B19/00 ,  C30B19/12 ,  C30B29/40

    摘要： [Problems] To provide a process that allows melt growth of single crystals of a gallium-containing nitride with less dangerous, inexpensive equipment, in particular, a process that can be performed under normal pressure. [Solving Means] A process for producing single crystals of a gallium-containing nitride on a seed crystal substrate by a reaction between molten gallium retained in a container inside a crystal growth chamber and nitrogen gas, the process includes the steps of preparing a eutectic alloy melt of gallium (Ga); dipping the seed crystal substrate into the eutectic alloy melt, the seed crystal substrate having a catalytic metal having a mesh, stripe, or open polka-dot pattern deposited thereon; and graphoepitaxially growing a single crystal phase of the gallium-containing nitride on the surface of the seed crystal substrate by the reaction at the surface of the seed crystal substrate between gallium, which is a component of a eutectic alloy, and nitrogen dissolving into the eutectic alloy melt from a space zone containing a nitrogen supply source above a surface of the melt.

    摘要翻译： [问题]提供一种允许含有氮化镓的单晶熔融生长的方法，其具有危险性低廉的设备，特别是能够在常压下进行的方法。 [解决方案]通过保留在晶体生长室内的容器中的熔融镓与氮气之间的反应，在晶种基板上制造含镓氮化物的单晶的方法，该方法包括以下步骤：制备共晶合金 熔融镓（Ga）; 将晶种衬底浸入共晶合金熔体中，晶种衬底具有沉积在其上的网状，条纹或开口圆点图案的催化金属; 并且通过在晶体基板的表面上的作为共晶合金的成分的镓与溶解在共晶体中的氮之间的反应在晶种基板的表面上对含镓氮化物的单晶相进行表面取向生长 来自在熔体表面上方含有氮源的空间区的合金熔体。