PHOTOVOLTAIC DEVICE WITH LIGHT COLLECTING ELECTRODE
    1.
    发明申请
    PHOTOVOLTAIC DEVICE WITH LIGHT COLLECTING ELECTRODE 审中-公开
    具有光收集电极的光电器件

    公开(公告)号:US20100193019A1

    公开(公告)日:2010-08-05

    申请号:US12700499

    申请日:2010-02-04

    IPC分类号: H01L31/00

    摘要: The application discloses a solar cell having a lower series resistance by designing the sectional configuration of the electrode and adjusting the distance of the neighboring two electrodes and the width of the electrode while the quantity of the incident light is not impaired thereof.

    摘要翻译: 本申请公开了一种具有较低串联电阻的太阳能电池,通过设计电极的截面结构并调节相邻的两个电极的距离和电极的宽度,同时入射光的量不受损。

    Light-emitting device
    3.
    发明授权
    Light-emitting device 有权
    发光装置

    公开(公告)号:US08823039B2

    公开(公告)日:2014-09-02

    申请号:US13459342

    申请日:2012-04-30

    IPC分类号: H01L33/62

    摘要: This disclosure discloses a light-emitting device. The light-emitting device comprises: a light-emitting stack having an upper surface and a lower surface; a pad, arranged on the upper surface, comprising: a first bonding region; and a second bonding region physically connected to the first bonding region through a connecting region having a connecting width; a first electrode connected to the first bonding region; a second electrode connected to the second bonding region; and a third electrode extending from the pad and arranged between the first electrode and the second electrode. At least one of the first electrode, the second electrode, and the third electrode has a width smaller than the connecting width.

    摘要翻译: 本公开公开了一种发光装置。 发光装置包括:具有上表面和下表面的发光叠层; 布置在所述上​​表面上的垫,包括:第一接合区域; 以及通过具有连接宽度的连接区域物理地连接到所述第一接合区域的第二接合区域; 连接到所述第一接合区域的第一电极; 连接到所述第二接合区域的第二电极; 以及从所述焊盘延伸并且布置在所述第一电极和所述第二电极之间的第三电极。 第一电极,第二电极和第三电极中的至少一个具有小于连接宽度的宽度。

    LIGHT-EMITTING DEVICE
    4.
    发明申请
    LIGHT-EMITTING DEVICE 有权
    发光装置

    公开(公告)号:US20120211794A1

    公开(公告)日:2012-08-23

    申请号:US13459342

    申请日:2012-04-30

    IPC分类号: H01L33/62

    摘要: This disclosure discloses a light-emitting device. The light-emitting device comprises: a light-emitting stack having an upper surface and a lower surface; a pad, arranged on the upper surface, comprising: a first bonding region; and a second bonding region physically connected to the first bonding region through a connecting region having a connecting width; a first electrode connected to the first bonding region; a second electrode connected to the second bonding region; and a third electrode extending from the pad and arranged between the first electrode and the second electrode. At least one of the first electrode, the second electrode, and the third electrode has a width smaller than the connecting width.

    摘要翻译: 本公开公开了一种发光装置。 发光装置包括:具有上表面和下表面的发光叠层; 布置在所述上​​表面上的垫,包括:第一接合区域; 以及通过具有连接宽度的连接区域物理地连接到所述第一接合区域的第二接合区域; 连接到所述第一接合区域的第一电极; 连接到所述第二接合区域的第二电极; 以及从所述焊盘延伸并且布置在所述第一电极和所述第二电极之间的第三电极。 第一电极,第二电极和第三电极中的至少一个具有小于连接宽度的宽度。

    Light-emitting device
    5.
    发明申请
    Light-emitting device 有权
    发光装置

    公开(公告)号:US20090140280A1

    公开(公告)日:2009-06-04

    申请号:US12292593

    申请日:2008-11-21

    IPC分类号: H01L33/00

    摘要: A light-emitting device comprises a substrate, an epitaxial structure formed on the substrate including a first semiconductor layer, a second semiconductor layer, and a light-emitting layer formed between the first semiconductor layer and the second semiconductor layer. A trench is formed in the epitaxial structure to expose a part of side surface of the epitaxial structure and a part of surface of the first semiconductor layer, so that a first conductive structure is formed on the part of surface of the first semiconductor layer in the trench, and a second conductive structure is formed on the second semiconductor layer. The first conductive structure includes a first electrode and a first pad electrically contacted with each other. The second conductive structure includes a second electrode and a second pad electrically contacted with each other. Furthermore, the area of at least one of the first pad and the second pad is between 1.5×104 μm and 6.2×104 μm.

    摘要翻译: 发光器件包括衬底,形成在衬底上的外延结构,包括第一半导体层,第二半导体层和形成在第一半导体层和第二半导体层之间的发光层。 在外延结构中形成沟槽以暴露外延结构的侧面的一部分和第一半导体层的表面的一部分,使得第一导电结构形成在第一半导体层的表面的一部分中 沟槽,并且在第二半导体层上形成第二导电结构。 第一导电结构包括彼此电接触的第一电极和第一焊盘。 第二导电结构包括彼此电接触的第二电极和第二焊盘。 此外,第一垫和第二垫中的至少一个的面积在1.5×10 4 mum到6.2×10 4 m之间。

    Light-emitting device
    6.
    发明授权
    Light-emitting device 有权
    发光装置

    公开(公告)号:US08188505B2

    公开(公告)日:2012-05-29

    申请号:US12292593

    申请日:2008-11-21

    IPC分类号: H01L33/00

    摘要: A light-emitting device comprises a substrate, an epitaxial structure formed on the substrate including a first semiconductor layer, a second semiconductor layer, and a light-emitting layer formed between the first semiconductor layer and the second semiconductor layer. A trench is formed in the epitaxial structure to expose a part of side surface of the epitaxial structure and a part of surface of the first semiconductor layer, so that a first conductive structure is formed on the part of surface of the first semiconductor layer in the trench, and a second conductive structure is formed on the second semiconductor layer. The first conductive structure includes a first electrode and a first pad electrically contacted with each other. The second conductive structure includes a second electrode and a second pad electrically contacted with each other. Furthermore, the area of at least one of the first pad and the second pad is between 1.5×104μm2 and 6.2×104 μm2.

    摘要翻译: 发光器件包括衬底,形成在衬底上的外延结构,包括第一半导体层,第二半导体层和形成在第一半导体层和第二半导体层之间的发光层。 在外延结构中形成沟槽以暴露外延结构的侧面的一部分和第一半导体层的表面的一部分,使得第一导电结构形成在第一半导体层的表面的一部分中 沟槽,并且在第二半导体层上形成第二导电结构。 第一导电结构包括彼此电接触的第一电极和第一焊盘。 第二导电结构包括彼此电接触的第二电极和第二焊盘。 此外,第一焊盘和第二焊盘中的至少一个的面积在1.5×104μm2和​​6.2×104μm2之间。