公开(公告)号：US20100104247A1

公开(公告)日：2010-04-29

申请号：US12528914

申请日：2008-03-06

申请人： Tsuyoshi Imaizumi ,  Katsuyuki Aihara ,  Hiroshi Miyano ,  Masahiro Hamada ,  Akio Kishi ,  Yoshiaki Terasawa ,  Keiju Okabe ,  Hiroshi Miyabayashi

发明人： Tsuyoshi Imaizumi ,  Katsuyuki Aihara ,  Hiroshi Miyano ,  Masahiro Hamada ,  Akio Kishi ,  Yoshiaki Terasawa ,  Keiju Okabe ,  Hiroshi Miyabayashi

IPC分类号： G02B6/00 ,  G02B6/44

CPC分类号： G02B6/48 ,  G02B6/4446

摘要： An optical access network system for making a connection between a central-office optical cable and a subscriber optical cable is provided, the optical access network system being capable of facilitating the operation of laying optical cable. The optical access network system includes a connecting optical cable for forming a connection with one or a plurality of the subscriber optical cables, the connecting optical cable being obtained by assembling together a plurality of component cables having the same number of fibers as the one or plurality of subscriber optical cables. This optical access network system preferably further includes a subscriber enclosure for connecting one of the subscriber cables from among the one or plurality of subscriber optical cables and one of the component cables from among the plurality of component cables of the connecting cable.

摘要翻译： 提供了一种用于在中心局光缆和用户光缆之间建立连接的光接入网系统，该光接入网系统能够有助于铺设光缆的操作。 光接入网络系统包括用于与一个或多个用户光缆形成连接的连接光缆，连接光缆是通过将具有相同数量的光纤的多个部件电缆组合在一起而获得的， 的用户光缆。 该光接入网络系统优选地还包括用户外壳，用于从一个或多个用户光缆中的一个用户电缆中的一个连接到连接电缆的多个分量电缆中的一个分量电缆。

公开(公告)号：US20070190746A1

公开(公告)日：2007-08-16

申请号：US11690395

申请日：2007-03-23

申请人： Masataka Ito ,  Kenji Yamagata ,  Yasuo Kakizaki ,  Kazuhito Takanashi ,  Hiroshi Miyabayashi ,  Ryuji Moriwaki ,  Takashi Tsuboi

发明人： Masataka Ito ,  Kenji Yamagata ,  Yasuo Kakizaki ,  Kazuhito Takanashi ,  Hiroshi Miyabayashi ,  Ryuji Moriwaki ,  Takashi Tsuboi

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L22/12 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/30604 ,  H01L21/31056 ,  H01L21/31654 ,  H01L21/32134 ,  H01L21/6708 ,  H01L21/76254 ,  H01L21/76259 ,  H01L22/20

摘要： An SOI substrate which has a thick SOI layer is first prepared. Then, the SOI layer is thinned to a target film thickness using as a unit a predetermined thickness not more than that of one lattice. This thinning is performed by repeating a unit thinning step which includes an oxidation step of oxidizing the surface of the SOI layer by the predetermined thickness not more than that of one lattice and a removal step of selectively removing silicon oxide formed by the oxidation. The SOI layer of the SOI substrate is chemically etched by supplying a chemical solution to the SOI layer, and the film thickness of the etched SOI layer is measured. When the measured film thickness of the SOI layer has a predetermined value, a process of chemically etching the SOI layer ends.

摘要翻译： 首先制备具有厚SOI层的SOI衬底。 然后，使用不大于一个晶格的预定厚度的单位将SOI层减薄到目标膜厚度。 这种稀化是通过重复单元稀化步骤进行的，该步骤包括将SOI层的表面氧化预定厚度不超过一个晶格的氧化步骤，以及选择性地除去氧化形成的氧化硅的去除步骤。 通过向SOI层提供化学溶液来对SOI衬底的SOI层进行化学蚀刻，并测量蚀刻的SOI层的膜厚。 当所测量的SOI层的膜厚度具有预定值时，SOI层的化学蚀刻处理结束。

公开(公告)号：USD733655S1

公开(公告)日：2015-07-07

申请号：US29476261

申请日：2013-12-12

申请人： Takuya Sato ,  Yasuhiro Masuzaki ,  Hiroshi Miyabayashi

设计人： Takuya Sato ,  Yasuhiro Masuzaki ,  Hiroshi Miyabayashi

公开(公告)号：US06660606B2

公开(公告)日：2003-12-09

申请号：US09963449

申请日：2001-09-27

申请人： Hiroshi Miyabayashi ,  Nobuhiko Sato ,  Masataka Ito

发明人： Hiroshi Miyabayashi ,  Nobuhiko Sato ,  Masataka Ito

IPC分类号： H01L21336

CPC分类号： H01L21/76259

摘要： The number of defects (HF defects) in the SOI layer of an SOI substrate is reduced. In an annealing method of annealing an SOI substrate in a reducing atmosphere at a temperature equal to or less than the melting point of a semiconductor, annealing is executed in a state wherein a flow of a reducing atmospheric gas parallel to the surface of the SOI substrate is generated near this surface.

摘要翻译： SOI衬底的SOI层中的缺陷数（HF缺陷）减少。 在还原性气氛中，在半导体的熔点以下的温度退火SOI衬底的退火方法中，在与SOI衬底的表面平行的还原气氛气体的流动的状态下进行退火 在该表面附近产生。

公开(公告)号：US08628252B2

公开(公告)日：2014-01-14

申请号：US12709299

申请日：2010-02-19

申请人： Shinichi Matsumoto ,  Yasuhiro Masuzaki ,  Kiyoshi Jokura ,  Hiroshi Miyabayashi

发明人： Shinichi Matsumoto ,  Yasuhiro Masuzaki ,  Kiyoshi Jokura ,  Hiroshi Miyabayashi

IPC分类号： G02B6/36 ,  G02B6/38 ,  H01R13/52

CPC分类号： G02B6/3879 ,  G02B6/3816 ,  G02B6/3825 ,  G02B6/3891 ,  G02B6/3893

摘要： There is provided a waterproof connector. The waterproof connector comprises a connector member supporting a ferrule to be butted against a target ferrule disposed in a target connector, the connector member being adapted to be locked to an adapter member of the target connector by an action of a lock operation portion provided in the connector member; unlocking means being adapted to operate the lock operation portion to release the locked state; and a housing body allowing the unlocking means to be slidably moved. The waterproof connector is adapted to be released from the connection with the target connector in such a manner that the unlocking means is allowed to be moved away from the connector member, whereby the unlocking means is operable to operate the lock operation portion to release the locked state, and to move the connector member away from the adapter member to release the fitting.

摘要翻译： 提供防水连接器。 该防水连接器包括一个连接件，该连接件支撑着一个与目标连接器相对的目标套圈对接的套圈，该连接器构件适于通过设置在该目标连接器中的锁定操作部分的动作与该目标连接器的适配器部件锁定 连接器构件 解锁装置适于操作锁定操作部分以释放锁定状态; 以及允许解锁装置可滑动地移动的壳体。 防水连接器适于从与目标连接器的连接释放，使得解锁装置被允许远离连接器构件移动，由此解锁装置可操作以操作锁定操作部分以释放锁定 状态，并且使连接器构件远离适配器构件以释放配件。

公开(公告)号：USD734266S1

公开(公告)日：2015-07-14

申请号：US29476255

申请日：2013-12-12

申请人： Takuya Sato ,  Yasuhiro Masuzaki ,  Hiroshi Miyabayashi

设计人： Takuya Sato ,  Yasuhiro Masuzaki ,  Hiroshi Miyabayashi

公开(公告)号：US07256104B2

公开(公告)日：2007-08-14

申请号：US10841621

申请日：2004-05-10

申请人： Masataka Ito ,  Kenji Yamagata ,  Yasuo Kakizaki ,  Kazuhito Takanashi ,  Hiroshi Miyabayashi ,  Ryuji Moriwaki ,  Takashi Tsuboi

发明人： Masataka Ito ,  Kenji Yamagata ,  Yasuo Kakizaki ,  Kazuhito Takanashi ,  Hiroshi Miyabayashi ,  Ryuji Moriwaki ,  Takashi Tsuboi

IPC分类号： H01L21/46 ,  H01L21/30 ,  H01L21/762

CPC分类号： H01L22/12 ,  H01L21/30604 ,  H01L21/31056 ,  H01L21/31654 ,  H01L21/32134 ,  H01L21/6708 ,  H01L21/76254 ,  H01L21/76259 ,  H01L22/20

摘要： An SOI substrate which has a thick SOI layer is first prepared. Then, the SOI layer is thinned to a target film thickness using as a unit a predetermined thickness not more than that of one lattice. This thinning is performed by repeating a unit thinning step which includes an oxidation step of oxidizing the surface of the SOI layer by the predetermined thickness not more than that of one lattice and a removal step of selectively removing silicon oxide formed by the oxidation. The SOI layer of the SOI substrate is chemically etched by supplying a chemical solution to the SOI layer, and the film thickness of the etched SOI layer is measured. When the measured film thickness of the SOI layer has a predetermined value, a process of chemically etching the SOI layer ends.

摘要翻译： 首先制备具有厚SOI层的SOI衬底。 然后，使用不大于一个晶格的预定厚度的单位将SOI层减薄到目标膜厚度。 这种稀化是通过重复单元稀化步骤进行的，该步骤包括将SOI层的表面氧化预定厚度不超过一个晶格的氧化步骤，以及选择性地除去氧化形成的氧化硅的去除步骤。 通过向SOI层提供化学溶液来对SOI衬底的SOI层进行化学蚀刻，并测量蚀刻的SOI层的膜厚。 当所测量的SOI层的膜厚度具有预定值时，SOI层的化学蚀刻处理结束。