公开(公告)号：US06660606B2

公开(公告)日：2003-12-09

申请号：US09963449

申请日：2001-09-27

申请人： Hiroshi Miyabayashi ,  Nobuhiko Sato ,  Masataka Ito

发明人： Hiroshi Miyabayashi ,  Nobuhiko Sato ,  Masataka Ito

IPC分类号： H01L21336

CPC分类号： H01L21/76259

摘要： The number of defects (HF defects) in the SOI layer of an SOI substrate is reduced. In an annealing method of annealing an SOI substrate in a reducing atmosphere at a temperature equal to or less than the melting point of a semiconductor, annealing is executed in a state wherein a flow of a reducing atmospheric gas parallel to the surface of the SOI substrate is generated near this surface.

摘要翻译： SOI衬底的SOI层中的缺陷数（HF缺陷）减少。 在还原性气氛中，在半导体的熔点以下的温度退火SOI衬底的退火方法中，在与SOI衬底的表面平行的还原气氛气体的流动的状态下进行退火 在该表面附近产生。

公开(公告)号：US20070190746A1

公开(公告)日：2007-08-16

申请号：US11690395

申请日：2007-03-23

申请人： Masataka Ito ,  Kenji Yamagata ,  Yasuo Kakizaki ,  Kazuhito Takanashi ,  Hiroshi Miyabayashi ,  Ryuji Moriwaki ,  Takashi Tsuboi

发明人： Masataka Ito ,  Kenji Yamagata ,  Yasuo Kakizaki ,  Kazuhito Takanashi ,  Hiroshi Miyabayashi ,  Ryuji Moriwaki ,  Takashi Tsuboi

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L22/12 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/30604 ,  H01L21/31056 ,  H01L21/31654 ,  H01L21/32134 ,  H01L21/6708 ,  H01L21/76254 ,  H01L21/76259 ,  H01L22/20

摘要： An SOI substrate which has a thick SOI layer is first prepared. Then, the SOI layer is thinned to a target film thickness using as a unit a predetermined thickness not more than that of one lattice. This thinning is performed by repeating a unit thinning step which includes an oxidation step of oxidizing the surface of the SOI layer by the predetermined thickness not more than that of one lattice and a removal step of selectively removing silicon oxide formed by the oxidation. The SOI layer of the SOI substrate is chemically etched by supplying a chemical solution to the SOI layer, and the film thickness of the etched SOI layer is measured. When the measured film thickness of the SOI layer has a predetermined value, a process of chemically etching the SOI layer ends.

摘要翻译： 首先制备具有厚SOI层的SOI衬底。 然后，使用不大于一个晶格的预定厚度的单位将SOI层减薄到目标膜厚度。 这种稀化是通过重复单元稀化步骤进行的，该步骤包括将SOI层的表面氧化预定厚度不超过一个晶格的氧化步骤，以及选择性地除去氧化形成的氧化硅的去除步骤。 通过向SOI层提供化学溶液来对SOI衬底的SOI层进行化学蚀刻，并测量蚀刻的SOI层的膜厚。 当所测量的SOI层的膜厚度具有预定值时，SOI层的化学蚀刻处理结束。

公开(公告)号：US07256104B2

公开(公告)日：2007-08-14

申请号：US10841621

申请日：2004-05-10

申请人： Masataka Ito ,  Kenji Yamagata ,  Yasuo Kakizaki ,  Kazuhito Takanashi ,  Hiroshi Miyabayashi ,  Ryuji Moriwaki ,  Takashi Tsuboi

发明人： Masataka Ito ,  Kenji Yamagata ,  Yasuo Kakizaki ,  Kazuhito Takanashi ,  Hiroshi Miyabayashi ,  Ryuji Moriwaki ,  Takashi Tsuboi

IPC分类号： H01L21/46 ,  H01L21/30 ,  H01L21/762

CPC分类号： H01L22/12 ,  H01L21/30604 ,  H01L21/31056 ,  H01L21/31654 ,  H01L21/32134 ,  H01L21/6708 ,  H01L21/76254 ,  H01L21/76259 ,  H01L22/20

摘要： An SOI substrate which has a thick SOI layer is first prepared. Then, the SOI layer is thinned to a target film thickness using as a unit a predetermined thickness not more than that of one lattice. This thinning is performed by repeating a unit thinning step which includes an oxidation step of oxidizing the surface of the SOI layer by the predetermined thickness not more than that of one lattice and a removal step of selectively removing silicon oxide formed by the oxidation. The SOI layer of the SOI substrate is chemically etched by supplying a chemical solution to the SOI layer, and the film thickness of the etched SOI layer is measured. When the measured film thickness of the SOI layer has a predetermined value, a process of chemically etching the SOI layer ends.

摘要翻译： 首先制备具有厚SOI层的SOI衬底。 然后，使用不大于一个晶格的预定厚度的单位将SOI层减薄到目标膜厚度。 这种稀化是通过重复单元稀化步骤进行的，该步骤包括将SOI层的表面氧化预定厚度不超过一个晶格的氧化步骤，以及选择性地除去氧化形成的氧化硅的去除步骤。 通过向SOI层提供化学溶液来对SOI衬底的SOI层进行化学蚀刻，并测量蚀刻的SOI层的膜厚。 当所测量的SOI层的膜厚度具有预定值时，SOI层的化学蚀刻处理结束。

公开(公告)号：US07945873B2

公开(公告)日：2011-05-17

申请号：US12048691

申请日：2008-03-14

申请人： Kyouhei Watanabe ,  Masaki Kurihara ,  Hitoshi Shindo ,  Nobuhiko Sato ,  Yasuhiro Sekine ,  Masataka Ito

发明人： Kyouhei Watanabe ,  Masaki Kurihara ,  Hitoshi Shindo ,  Nobuhiko Sato ,  Yasuhiro Sekine ,  Masataka Ito

IPC分类号： G06F17/50

CPC分类号： G03F1/68 ,  G03F1/50 ,  G03F7/0005 ,  Y10T29/49

摘要： A method of generating mask pattern data of a photomask used to form microlenses divides a pattern formation surface of a mask pattern to be used for the photomask into a plurality of grid cells, acquires data that represent a transmitted light distribution of the mask pattern to be used for the photomask, determines whether to place a shield on each of the plurality of grid cells by binarizing the plurality of grid cells in order of increasing or decreasing distance from a center of the pattern formation surface using an error diffusion method, to acquire the transmitted light distribution, and generates mask pattern data that represent an arrangement of the shields, based on the determination.

摘要翻译： 产生用于形成微透镜的光掩模的掩模图案数据的方法将用于光掩模的掩模图案的图案形成表面划分成多个网格单元，获取表示掩模图案的透射光分布的数据为 用于光掩模的方法，通过使用误差扩散法从图案形成面的中心的距离增加或减小的次数二次化多个网格单元，确定是否对多个网格单元中的每一个放置屏蔽，以获取 透射光分布，并且基于该确定生成表示屏蔽的布置的掩模图案数据。

公开(公告)号：US06639327B2

公开(公告)日：2003-10-28

申请号：US09899257

申请日：2001-07-06

申请人： Kazutaka Momoi ,  Takao Yonehara ,  Nobuhiko Sato ,  Masataka Ito ,  Noriaki Honma

发明人： Kazutaka Momoi ,  Takao Yonehara ,  Nobuhiko Sato ,  Masataka Ito ,  Noriaki Honma

IPC分类号： H01L2358

CPC分类号： H01L21/76251 ,  H01L21/3226 ,  H01L21/764

摘要： In a bonded semiconductor member, microgaps are formed on a substrate side of a bonding interface to thereby constitute a gettering site, and heavy metal elements contaminated in the substrate are captured by the microgaps. The bonded semiconductor member is manufactured by interposing the microgaps between two substrates.

公开(公告)号：US08209641B2

公开(公告)日：2012-06-26

申请号：US13076511

申请日：2011-03-31

申请人： Kyouhei Watanabe ,  Masaki Kurihara ,  Hitoshi Shindo ,  Nobuhiko Sato ,  Yasuhiro Sekine ,  Masataka Ito

发明人： Kyouhei Watanabe ,  Masaki Kurihara ,  Hitoshi Shindo ,  Nobuhiko Sato ,  Yasuhiro Sekine ,  Masataka Ito

IPC分类号： G06F17/50

CPC分类号： G03F1/68 ,  G03F1/50 ,  G03F7/0005 ,  Y10T29/49

摘要： A method of fabricating a photomask used to form a lens. The method includes the steps of generating mask pattern data for each of a plurality of grid cells constituting a mask pattern for the lens, and fabricating the photomask based on the mask pattern data. The step of generating the mask pattern data includes acquiring data which represents a transmitted light distribution required for the photomask to fabricate the lens, in which the transmitted light distribution includes a quantity of transmitted light in each of the plurality of grid cells, and determining whether to place a shield on each of the plurality of grid cells by binarizing the quantity of transmitted light in each of the plurality of grid cells in order of increasing or decreasing distance from a center of the mask pattern using an error diffusion method.

摘要翻译： 一种制造用于形成透镜的光掩模的方法。 该方法包括以下步骤：为构成透镜的掩模图案的多个网格单元中的每一个生成掩模图案数据，以及基于掩模图案数据来制造光掩模。 生成掩模图案数据的步骤包括获取表示光掩模所需的透射光分布以制造透镜的数据，其中透射光分布包括多个格栅单元中的每一个中的透射光量，以及确定是否 通过使用误差扩散法从掩模图案的中心的距离的增加或减小的顺序二值化多个网格单元中的每一个网格单元中的透射光的量来将屏蔽放置在多个网格单元中的每一个上。

公开(公告)号：US20080263502A1

公开(公告)日：2008-10-23

申请号：US12048691

申请日：2008-03-14

申请人： Kyouhei Watanabe ,  Masaki Kurihara ,  Hitoshi Shindo ,  Nobuhiko Sato ,  Yasuhiro Sekine ,  Masataka Ito

发明人： Kyouhei Watanabe ,  Masaki Kurihara ,  Hitoshi Shindo ,  Nobuhiko Sato ,  Yasuhiro Sekine ,  Masataka Ito

IPC分类号： G06F17/50

CPC分类号： G03F1/68 ,  G03F1/50 ,  G03F7/0005 ,  Y10T29/49

摘要： A method for generating mask pattern data of a photomask used to form microlenses divides a pattern formation surface of a mask pattern to be used for the photomask into a plurality of grid cells, acquires data which represents transmitted light distribution of the mask pattern to be used for the photomask, determines whether to place a shield on each of the plurality of grid cells by binarizing the plurality of grid cells in order of increasing or decreasing distance from a center of the pattern formation surface using an error diffusion method to acquire the transmitted light distribution, and generates mask pattern data which represents an arrangement of the shields based on results from the determining step.

摘要翻译： 用于生成用于形成微透镜的光掩模的掩模图案数据的方法将用于光掩模的掩模图案的图案形成表面划分成多个网格单元，获取表示要使用的掩模图案的透射光分布的数据 对于光掩模，通过使用误差扩散方法使用误差扩散方法来依次增加或减小距离图案形成表面的中心的距离来二进制化多个网格单元，来确定是否将多个网格单元中的每一个放置屏蔽，以获取透射光 分配，并且基于来自确定步骤的结果生成表示屏蔽的布置的掩模图案数据。

公开(公告)号：US06407367B1

公开(公告)日：2002-06-18

申请号：US09217136

申请日：1998-12-21

申请人： Masataka Ito ,  Nobuhiko Sato

发明人： Masataka Ito ,  Nobuhiko Sato

IPC分类号： F27B514

CPC分类号： H01L21/67109 ,  C30B31/10 ,  C30B33/005 ,  H01L21/2007 ,  H01L21/76251

摘要： A novel heat treatment apparatus is provided which comprises a first tube, a second tube placed therein, and a heater. A semiconductor article is heat treated in the second tube in an atmospheric gas. At least an internal face of the second tube is constructed from non-silicon oxide, and the first tube is constructed from vitreous silica. In this way, hydrogen gas is fed to a wafer without passing over a face comprised of silicon oxide heated to a high temperature. This apparatus prevents metal contamination of the wafer by fused quartz tube as the contamination source and also prevents etching of silicon by reaction of silicon oxide and silicon.

摘要翻译： 提供了一种新颖的热处理装置，其包括第一管，放置在其中的第二管和加热器。 半导体制品在第二管中以大气气体进行热处理。 至少第二管的内表面由非氧化硅构成，第一管由玻璃状二氧化硅构成。 以这种方式，氢气被供给到晶片，而不会通过加热到高温的氧化硅的表面。 该装置防止熔融石英管作为污染源对晶片的金属污染，并且还防止硅氧化物和硅的反应来蚀刻硅。

公开(公告)号：US20110170197A1

公开(公告)日：2011-07-14

申请号：US13076511

申请日：2011-03-31

申请人： Kyouhei Watanabe ,  Masaki Kurihara ,  Hitoshi Shindo ,  Nobuhiko Sato ,  Yasuhiro Sekine ,  Masataka Ito

发明人： Kyouhei Watanabe ,  Masaki Kurihara ,  Hitoshi Shindo ,  Nobuhiko Sato ,  Yasuhiro Sekine ,  Masataka Ito

IPC分类号： G02B27/12 ,  G02B3/00 ,  G03F1/00 ,  B23P17/04

CPC分类号： G03F1/68 ,  G03F1/50 ,  G03F7/0005 ,  Y10T29/49

摘要： A method of fabricating a photomask used to form a lens. The method includes the steps of generating mask pattern data for each of a plurality of grid cells constituting a mask pattern for the lens, and fabricating the photomask based on the mask pattern data. The step of generating the mask pattern data includes acquiring data which represents a transmitted light distribution required for the photomask to fabricate the lens, in which the transmitted light distribution includes a quantity of transmitted light in each of the plurality of grid cells, and determining whether to place a shield on each of the plurality of grid cells by binarizing the quantity of transmitted light in each of the plurality of grid cells in order of increasing or decreasing distance from a center of the mask pattern using an error diffusion method.

摘要翻译： 一种制造用于形成透镜的光掩模的方法。 该方法包括以下步骤：为构成透镜的掩模图案的多个网格单元中的每一个生成掩模图案数据，以及基于掩模图案数据来制造光掩模。 生成掩模图案数据的步骤包括获取表示光掩模所需的透射光分布以制造透镜的数据，其中透射光分布包括多个格栅单元中的每一个中的透射光量，以及确定是否 通过使用误差扩散法从掩模图案的中心的距离的增加或减小的顺序二值化多个网格单元中的每一个网格单元中的透射光的量来将屏蔽放置在多个网格单元中的每一个上。

公开(公告)号：US08157456B2

公开(公告)日：2012-04-17

申请号：US12890147

申请日：2010-09-24

申请人： Dongdong Wang ,  Zhenhua Shao ,  Xu Huang ,  Masataka Ito ,  Christopher Lee Keller

发明人： Dongdong Wang ,  Zhenhua Shao ,  Xu Huang ,  Masataka Ito ,  Christopher Lee Keller

IPC分类号： G02B6/12 ,  G02B6/26 ,  G02B6/42 ,  H04B10/12

CPC分类号： G02B6/43 ,  G02B6/1221 ,  G02B6/4214 ,  G02B6/4224 ,  H01L25/167 ,  H01L2224/16225 ,  H01L2924/00011 ,  H01L2924/00014 ,  Y10T29/49016 ,  H01L2224/0401

摘要： An optical interconnect device includes a first substrate, a second substrate, an optical waveguide, an electrical wiring and a switching device. The first substrate has an electrical wiring circuit, an electrical-optical converter for converting an electrical signal to an optical signal, and a light emitting device for emitting a light. The second substrate has an electrical wiring circuit, an optical-electrical converter for converting the optical signal to the electrical signal, and a light receiving device for receiving the light from the light emitted device. The optical waveguide optically connects the light emitting and light receiving devices. The electrical wiring electrically connects the electrical wiring circuits of the first and second substrates. The switching device determines a fast signal of data to be transmitted via the optical substrate and a slow signal of data to be transmitted via the electrical wiring.