公开(公告)号：US20080031710A1

公开(公告)日：2008-02-07

申请号：US11831361

申请日：2007-07-31

申请人： Tsuyoshi MORIYA ,  Hiroyuki Nakayama ,  Keisuke Kondoh ,  Hiroki Oka

发明人： Tsuyoshi MORIYA ,  Hiroyuki Nakayama ,  Keisuke Kondoh ,  Hiroki Oka

IPC分类号： B65H1/24

CPC分类号： H01L21/67201 ,  Y10S414/135

摘要： An intermediate transfer chamber that can prevent formation of defects in substrates. The intermediate transfer chamber is provided between a loader module being in a first environment where the interior thereof is at a first pressure and contains moisture, and a chamber of a process module being in a second environment where the interior thereof is at a second pressure lower than the first pressure. The intermediate transfer chamber comprises a transfer arm comprising a pick that bidirectionally transfers a substrate between the loader module and the chamber and supports the substrate, a load-lock module exhaust system that exhausts the interior of the intermediate transfer chamber so as to reduce pressure in the intermediate transfer chamber from the first pressure to the second pressure, and a plate-like member that controls the conductance of exhaust on at least a principal surface of the substrate opposite to the pick when the interior of the intermediate transfer chamber is exhausted.

摘要翻译： 可以防止在基板中形成缺陷的中间转印室。 中间转移室设置在处于第一环境中的第一环境中的装载器模块和处于第二环境中的处于第二环境的第二环境中的第二环境中的处理模块室， 比第一个压力。 中间传送室包括传送臂，传送臂包括在装载器模块和室之间双向传送衬底并支撑衬底的拾取器，负载锁定模块排气系统，其排出中间转印室的内部，以便减少 所述中间转印室从所述第一压力到所述第二压力，以及板状构件，其在所述中间转印室的内部被耗尽时控制与所述拾取器相对的所述基板的至少主表面上的排气的电导。

公开(公告)号：US20120012254A1

公开(公告)日：2012-01-19

申请号：US13243462

申请日：2011-09-23

申请人： Tsuyoshi MORIYA ,  Hiroyuki Nakayama ,  Keisuke Kondoh ,  Hiroki Oka

发明人： Tsuyoshi MORIYA ,  Hiroyuki Nakayama ,  Keisuke Kondoh ,  Hiroki Oka

IPC分类号： B08B13/00 ,  C23F1/08

CPC分类号： H01L21/67126

摘要： A gate valve cleaning method that can clean a gate valve that brings an atmospheric transfer chamber and an internal pressure variable transfer chamber that transfer a substrate into communication with each other or shuts them off from each other without bringing about a decrease in the throughput of a substrate processing system. Before the gate valve brings the atmospheric transfer chamber and the internal pressure variable transfer chamber into communication with each other, the pressure in the internal pressure variable transfer chamber is increased so that the pressure in the internal pressure variable transfer chamber can become higher than the pressure in the atmospheric transfer chamber.

摘要翻译： 一种闸阀清洗方法，其能够清洁使大气传送室和内部压力可变转移室的闸阀彼此连通或彼此连通或将它们彼此关闭，而不会导致生产量的降低 基板处理系统。 在闸阀将大气传送室和内压可变传送室彼此连通之前，内压可变传送室中的压力增加，使得内压可变传送室中的压力可以变得高于压力 在大气传递室。

公开(公告)号：US20090301516A1

公开(公告)日：2009-12-10

申请号：US12539922

申请日：2009-08-12

申请人： Tsuyoshi MORIYA ,  Hiroyuki NAKAYAMA

发明人： Tsuyoshi MORIYA ,  Hiroyuki NAKAYAMA

IPC分类号： B08B9/00

CPC分类号： H01L21/67028 ,  B08B7/0035 ,  H01L21/67742

摘要： A substrate transfer device includes an accommodating chamber for accommodating a substrate; a substrate transfer unit installed in the accommodating chamber for transferring the substrate; a gas exhaust unit for exhausting the accommodating chamber; and a gas introducing unit for introducing a gas into the accommodating chamber. The substrate transfer unit has a mounting subunit for mounting the substrate thereon, an arm subunit one end of which is connected to the mounting subunit to move the mounting subunit, and an electrode installed in the mounting subunit to which a voltage is applied, and a high voltage is applied to the electrode while the gas is being introduced into the accommodating chamber and the accommodating chamber is being exhausted.

摘要翻译： 基板转印装置包括容纳基板的容纳室; 安装在所述容纳室中用于转移所述基板的基板传送单元; 用于排出容纳室的排气单元; 以及用于将气体引入容纳室的气体引入单元。 基板转印单元具有用于在其上安装基板的安装子单元，其一端连接到安装子单元以移动安装子单元的臂子单元和安装在施加有电压的安装子单元中的电极，以及 当气体被引入容纳室并且容纳室正在被排出时，高压被施加到电极。

公开(公告)号：US20090053835A1

公开(公告)日：2009-02-26

申请号：US12258196

申请日：2008-10-24

申请人： Tsuyoshi MORIYA ,  Hiroyuki Nakayama

发明人： Tsuyoshi MORIYA ,  Hiroyuki Nakayama

IPC分类号： H01L21/66 ,  C23F1/00

CPC分类号： H01J37/32935 ,  B08B9/08 ,  G01N15/0272 ,  G01N15/06 ,  G01N2015/0693 ,  Y10T428/30 ,  Y10T428/315 ,  Y10T428/8305

摘要： A semiconductor manufacturing apparatus includes a processing chamber for performing a manufacturing processing on a wafer. A gas supply line for introducing a purge gas is connected to an upper portion of the processing chamber, a valve being installed on the gas supply line. A rough pumping line with a valve is connected to a lower portion of the processing chamber. Installed on the rough pumping line are a dry pump for exhausting a gas in the processing chamber and a particle monitoring unit for monitoring particles between the valve and the dry pump. In the semiconductor manufacturing apparatus, after the valve is opened, the purge gas is supplied to apply physical vibration due to shock wave in the processing chamber so that deposits are detached therefrom to be monitored as particles.

摘要翻译： 半导体制造装置包括用于在晶片上进行制造处理的处理室。 用于引入吹扫气体的气体供给管线连接到处理室的上部，安装在气体供给管线上的阀。 具有阀的粗抽泵线连接到处理室的下部。 安装在粗抽油管上的是用于排出处理室中的气体的干燥泵和用于监测阀和干泵之间的颗粒的颗粒监测单元。 在半导体制造装置中，在阀打开之后，供给吹扫气体以在处理室中施加由冲击波引起的物理振动，从而将沉积物从其中分离出来，作为颗粒被监测。

公开(公告)号：US20070144670A1

公开(公告)日：2007-06-28

申请号：US11680315

申请日：2007-02-28

申请人： Tsuyoshi MORIYA ,  Hiroyuki NAKAYAMA

发明人： Tsuyoshi MORIYA ,  Hiroyuki NAKAYAMA

IPC分类号： G06F19/00 ,  H01L21/306

CPC分类号： H01J37/32935 ,  B08B9/08 ,  G01N15/0272 ,  G01N15/06 ,  G01N2015/0693 ,  Y10T428/30 ,  Y10T428/315 ,  Y10T428/8305

摘要： A semiconductor manufacturing apparatus includes a processing chamber for performing a manufacturing processing on a wafer. A gas supply line for introducing a purge gas is connected to an upper portion of the processing chamber, a valve being installed on the gas supply line. A rough pumping line with a valve a is connected to a lower portion of the processing chamber. Installed on the rough pumping line are a dry pump for exhausting a gas in the processing chamber and a particle monitoring unit for monitoring particles between the valve a and the dry pump. In the semiconductor manufacturing apparatus, after the valve is opened, the purge gas is supplied to apply physical vibration due to shock wave in the processing chamber 100 so that deposits are detached therefrom to be monitored as particles.

摘要翻译： 半导体制造装置包括用于在晶片上进行制造处理的处理室。 用于引入吹扫气体的气体供给管线连接到处理室的上部，安装在气体供给管线上的阀。 具有阀门a的粗抽油管线连接到处理室的下部。 安装在粗泵送管线上的是用于排出处理室中的气体的干燥泵和用于监测阀a和干泵之间的颗粒的颗粒监测单元。 在半导体制造装置中，在阀打开之后，供给吹扫气体，以在处理室100中施加由冲击波引起的物理振动，从而将沉积物从其中分离出来，作为颗粒被监视。

公开(公告)号：US20110126853A1

公开(公告)日：2011-06-02

申请号：US12960064

申请日：2010-12-03

申请人： Tsuyoshi MORIYA ,  Hiroyuki NAKAYAMA ,  Hiroshi NAGAIKE

发明人： Tsuyoshi MORIYA ,  Hiroyuki NAKAYAMA ,  Hiroshi NAGAIKE

IPC分类号： B08B6/00

CPC分类号： H01J37/32862 ,  H01J37/3244 ,  H01J37/32449

摘要： A plasma processing apparatus includes a processing chamber, in which a wafer W is plasma-processed, and a CPU controlling an operation of each component. A processing gas is introduced into the processing chamber under a first condition defined by a flow rate and a molecular weight of the processing gas, specifically based on a magnitude of a product A1 (=Q1×m1) of the flow rate Q1 and the molecular weight m1 of the processing gas, and a surface of the wafer W is physically or chemically etched. And then, a pre-purge gas which may be identical to or different from the processing gas is introduced into the processing chamber through a shower head under a second condition derived from the first condition.

摘要翻译： 等离子体处理装置包括其中晶片W被等离子体处理的处理室和控制每个部件的操作的CPU。 在处理气体的流速和分子量限定的第一条件下，特别是基于流量Q1的乘积A1（= Q1×m1）的大小和分子量 处理气体的重量m1，并且物理或化学蚀刻晶片W的表面。 然后，可以在处理气体中相同或不同的预净化气体在从第一条件导出的第二条件下通过喷淋头引入处理室。

公开(公告)号：US20100154995A1

公开(公告)日：2010-06-24

申请号：US12718699

申请日：2010-03-05

申请人： Tomoyuki KUDO ,  Jun OZAWA ,  Hiroshi NAKAMURA ,  Kazunori KAZAMA ,  Tsuyoshi MORIYA ,  Hiroyuki NAKAYAMA ,  Hiroshi NAGAIKE

发明人： Tomoyuki KUDO ,  Jun OZAWA ,  Hiroshi NAKAMURA ,  Kazunori KAZAMA ,  Tsuyoshi MORIYA ,  Hiroyuki NAKAYAMA ,  Hiroshi NAGAIKE

IPC分类号： H01L21/306 ,  B05C11/00 ,  G05D7/06

CPC分类号： H01L21/67201 ,  H01L21/67017 ,  H01L21/67253 ,  H01L21/67748 ,  Y10S414/135 ,  Y10S414/139

摘要： A computer readable storage medium storing a program for performing an operation method of a substrate processing apparatus is provided. The operation method includes the steps of introducing a nonreactive gas into the vacuum preparation chamber before the gate valve is opened while the substrate is transferred between the vacuum preparation chamber of the vacuum processing unit and the transfer unit, stopping introducing the nonreactive gas when an inner pressure of the vacuum preparation chamber becomes same as an atmospheric pressure, starting an evacuation process of the corrosive gas in the vacuum preparation chamber and then opening to atmosphere performed by letting the vacuum preparation chamber communicate with an atmosphere, and opening the gate valve after the step of opening to atmosphere.

摘要翻译： 提供一种存储用于执行基板处理装置的操作方法的程序的计算机可读存储介质。 操作方法包括以下步骤：在基板在真空处理单元的真空处理室和转印单元的真空准备室之间转移时，在闸阀打开之前将非反应性气体引入真空准备室中，当内部 真空制备室的压力与大气压力相同，开始真空制备室中的腐蚀性气体的抽空处理，然后通过使真空制备室与大气连通而进入大气，并在真空准备室之后打开闸阀 向大气开放的一步。

公开(公告)号：US20090134121A1

公开(公告)日：2009-05-28

申请号：US12359691

申请日：2009-01-26

申请人： Tsuyoshi MORIYA ,  Hiroyuki Nakayama

发明人： Tsuyoshi MORIYA ,  Hiroyuki Nakayama

IPC分类号： H05H1/24 ,  C23C14/34 ,  B44C1/22 ,  C23C16/44

CPC分类号： H01J37/32431 ,  H01J2237/022

摘要： There is provided a plasma processing apparatus including a plasma generating unit for generating a plasma in a processing chamber in which a set processing is performed on a substrate serving as an object to be processed. The plasma processing apparatus further includes a particle moving unit for electrostatically driving particles in a region above the substrate to be removed out of the region above the substrate in the processing chamber while the processing on the substrate is performed by using the plasma. In addition, there is provided a plasma processing method of a plasma processing apparatus including the steps of generating plasma in a processing chamber in which a set processing is performed on a substrate serving as an object to be processed; and performing the processing on the substrate by the plasma.

摘要翻译： 提供了一种等离子体处理装置，其包括等离子体产生单元，用于在处理室中产生等离子体，其中对作为待处理对象的基板进行设定处理。 等离子体处理装置还包括一个粒子移动单元，用于在通过使用等离子体进行基板上的处理的同时，在处理室中的基板上方的区域中，将基板上方的区域中的颗粒静电驱动。 此外，提供了一种等离子体处理装置的等离子体处理方法，其包括以下步骤：在对作为被处理对象的基板进行设定处理的处理室中产生等离子体; 并通过等离子体对衬底进行处理。

公开(公告)号：US20120285623A1

公开(公告)日：2012-11-15

申请号：US13559373

申请日：2012-07-26

申请人： Tsuyoshi MORIYA ,  Hiroyuki Nakayama

发明人： Tsuyoshi MORIYA ,  Hiroyuki Nakayama

IPC分类号： H01L21/3065 ,  B05C11/00

CPC分类号： H01J37/32431 ,  H01J2237/022

摘要： There is provided a plasma processing apparatus including a plasma generating unit for generating a plasma in a processing chamber in which a set processing is performed on a substrate serving as an object to be processed. The plasma processing apparatus further includes a particle moving unit for electrostatically driving particles in a region above the substrate to be removed out of the region above the substrate in the processing chamber while the processing on the substrate is performed by using the plasma. In addition, there is provided a plasma processing method of a plasma processing apparatus including the steps of generating plasma in a processing chamber in which a set processing is performed on a substrate serving as an object to be processed; and performing the processing on the substrate by the plasma.

摘要翻译： 提供了一种等离子体处理装置，其包括等离子体产生单元，用于在处理室中产生等离子体，其中对作为待处理对象的基板进行设定处理。 等离子体处理装置还包括一个粒子移动单元，用于在通过使用等离子体进行基板上的处理的同时，在处理室中的基板上方的区域中，将基板上方的区域中的颗粒静电驱动。 此外，提供了一种等离子体处理装置的等离子体处理方法，其包括以下步骤：在对作为被处理对象的基板进行设定处理的处理室中产生等离子体; 并通过等离子体对衬底进行处理。

公开(公告)号：US20100068395A1

公开(公告)日：2010-03-18

申请号：US12499588

申请日：2009-07-08

申请人： Tsuyoshi MORIYA ,  Hiroyuki NAKAYAMA ,  Hiroshi NAGAIKE ,  Keigo KOBAYASHI ,  Kaname YASUDA

发明人： Tsuyoshi MORIYA ,  Hiroyuki NAKAYAMA ,  Hiroshi NAGAIKE ,  Keigo KOBAYASHI ,  Kaname YASUDA

IPC分类号： B05D3/10 ,  B05C11/00

CPC分类号： C23C16/4404

摘要： A ceramic spray-coated member capable of surely controlling adhesion and detachment of water is produced by spraying a given ceramic onto a surface of a base material, in which an organic matter adsorbed on a surface of the ceramic spray-coated member is removed and the surface of the ceramic spray-coated member is stabilized by chemically bonding to water.

摘要翻译： 通过将给定的陶瓷喷涂到基材的表面上，除去吸附在陶瓷喷涂构件的表面上的有机物质，从而产生能够可靠地控制水的附着和分离的陶瓷喷涂构件， 通过化学键合到水来稳定陶瓷喷涂构件的表面。