公开(公告)号：US20080233756A1

公开(公告)日：2008-09-25

申请号：US12154521

申请日：2008-05-23

申请人： Natsuko Ito ,  Fumihiko Uesugi ,  Tsuyoshi Moriya

发明人： Natsuko Ito ,  Fumihiko Uesugi ,  Tsuyoshi Moriya

IPC分类号： H01L21/3065

CPC分类号： H01J37/32431 ,  H01J2237/022 ,  H01L21/67069

摘要： In a semiconductor device manufacturing apparatus that processing a substrate by applying a voltage to a gas to create a plasma, positively charged particles are trapped or guided at the instant that the cathode voltage is stopped, by an electrode to which is imparted a negative voltage, so as to prevent particles reaching the substrate.

摘要翻译： 在通过向气体施加电压以产生等离子体来处理衬底的半导体器件制造装置中，通过施加负电压的电极在正极电压停止的时刻捕获或引导带正电的粒子， 以防止颗粒到达基板。

公开(公告)号：US6115120A

公开(公告)日：2000-09-05

申请号：US413590

申请日：1999-10-06

申请人： Tsuyoshi Moriya ,  Fumihiko Uesugi ,  Natsuko Ito

发明人： Tsuyoshi Moriya ,  Fumihiko Uesugi ,  Natsuko Ito

IPC分类号： G01N15/00 ,  G01N15/02 ,  G01N21/53 ,  H01L21/66 ,  G01N21/00

CPC分类号： G01N15/0227 ,  G01N21/53

摘要： Particles generated within a semiconductor wafer process chamber are monitored by emitting a rastered laser beam into the process chamber and detecting a two-dimensional image of scattered radiant energy within the process chamber. A video frame representing a matrix array of pixel intensities is produced and processed by a processor. The processor receives first and second video frames, the first frame representing a matrix array of pixels of a background image of the process chamber before a wafer processing is started and the second frame representing a matrix array of corresponding pixels of a target image of the process changer after a wafer processing is started. Differential intensities between the pixels of the background image and corresponding pixels of the target image are detected and a decision is made on the detected intensities to produce an output signal representing presence or absence of the particles.

摘要翻译： 在半导体晶片处理室内产生的颗粒通过将成像激光束发射到处理室中并检测处理室内的散射辐射能的二维图像来监测。 表示像素强度的矩阵阵列的视频帧由处理器产生和处理。 处理器接收第一和第二视频帧，第一帧表示在晶片处理开始之前处理室的背景图像的矩阵阵列，并且第二帧表示处理的目标图像的对应像素的矩阵阵列 在晶片处理开始之后更换器。 检测背景图像的像素与目标图像的对应像素之间的差分强度，并且对所检测的强度进行判定，以产生表示颗粒存在或不存在的输出信号。

公开(公告)号：US08202394B2

公开(公告)日：2012-06-19

申请号：US10166303

申请日：2002-06-11

申请人： Tsuyoshi Moriya ,  Natsuko Ito ,  Fumihiko Uesugi

发明人： Tsuyoshi Moriya ,  Natsuko Ito ,  Fumihiko Uesugi

IPC分类号： H01L21/3065

CPC分类号： H01J37/32082 ,  H01J37/32935 ,  H01L21/31116 ,  H01L21/32136

摘要： In a method of manufacturing a semiconductor device with plasma generated in a process chamber by impressing radio-frequency power, a level of a radio-frequency power for each step is switched over in response to processing in each step upon applying a plurality of processing steps to a semiconductor substrate while holding the semiconductor substrate, and thereby the plurality of steps are carried out successively.

摘要翻译： 在通过施加射频功率来制造在处理室中产生的等离子体的半导体器件的方法中，在施加多个处理步骤时响应于每个步骤中的处理切换每个步骤的射频功率的电平 同时保持半导体衬底，从而连续执行多个步骤。

公开(公告)号：US06346425B1

公开(公告)日：2002-02-12

申请号：US09651186

申请日：2000-08-30

申请人： Natsuko Ito ,  Tsuyoshi Moriya ,  Fumihiko Uesugi ,  Shuji Moriya ,  Masaru Aomori ,  Yoshinori Kato ,  Mitsuhiro Tachibana

发明人： Natsuko Ito ,  Tsuyoshi Moriya ,  Fumihiko Uesugi ,  Shuji Moriya ,  Masaru Aomori ,  Yoshinori Kato ,  Mitsuhiro Tachibana

IPC分类号： H01L2100

CPC分类号： H01L22/26 ,  C23C16/4401 ,  C23C16/52 ,  G01N21/47 ,  H01L21/28556

摘要： A method for processing a substrate includes the steps of determining an allowable margin of process condition such that a substrate is processed without forming particles, selecting a process condition of a substrate for a production process such that the process condition falls in the allowable margin in the production process, and carrying out a processing of the substrate in the production process at the selected process condition, wherein the step of determining the allowable margin includes the steps of introducing an optical beam to an atmosphere in which the substrate is processed in the step of determining the allowable margin, and detecting scattering of the optical beam.

摘要翻译： 一种处理衬底的方法包括以下步骤：确定工艺条件的允许余量，使得在不形成颗粒的情况下处理衬底，选择用于生产工艺的衬底的工艺条件，使得工艺条件落在 在所选择的处理条件下在生产过程中进行基板的处理，其中确定允许余量的步骤包括以下步骤：将光束引入到其中处理基板的气氛中的步骤 确定容许余量，并检测光束的散射。

公开(公告)号：US06306770B1

公开(公告)日：2001-10-23

申请号：US09273293

申请日：1999-03-19

申请人： Natsuko Ito ,  Fumihiko Uesugi ,  Tsuyoshi Moriya

发明人： Natsuko Ito ,  Fumihiko Uesugi ,  Tsuyoshi Moriya

IPC分类号： H01L21302

CPC分类号： H01J37/32862 ,  C23F4/00

摘要： A plasma etching apparatus includes a processing chamber for etch-processing a substrate, a lower electrode located within the processing chamber for holding the substrate on an upper surface thereof by an electrostatic attraction, and an upper electrode located to face the lower electrode. A purge gas introducing port is provided at a side wall of the processing chamber at a position which is between the upper electrode and the lower electrode in height and which opposes to the evacuation port in a plan view in such a manner that the lower electrode is positioned between the evacuation port and the purge gas introducing port in the plan view. A plasma etching method includes the steps of holding the substrate on the lower electrode in such a condition that a surface to be etched of the substrate is faced upwards, then introducing a process gas into the processing chamber, applying a high frequency voltage between the lower electrode and the upper electrode to generate a plasma gas in a low pressure so as to etch the substrate, and thereafter, introducing a purge gas into the process chamber at the time of completion of the processing. At the time of completing the processing, the supplying of the process gas is stopped and it starts to supply the purge gas into the processing chamber, and thereafter, when a predetermined time has elapsed, the application of the high frequency voltage is stopped.

摘要翻译： 等离子体蚀刻装置包括用于对衬底进行蚀刻处理的处理室，位于处理室内的用于通过静电引力将衬底保持在其上表面上的下电极和位于下电极的上电极。 吹扫气体导入口设置在处理室的侧壁处于上部电极和下部电极之间的高度位置，并且在平面图中以与下部电极相反的方式设置在下部电极为 在平面图中位于排气口和净化气体导入口之间。 等离子体蚀刻方法包括以下步骤：在基板的被蚀刻表面朝上的状态下将基板保持在下电极上，然后将处理气体引入处理室，在下部电极之间施加高频电压 电极和上电极，以产生低压的等离子体气体，以蚀刻基板，然后在处理完成时将吹扫气体引入处理室。 在完成处理时，停止处理气体的供给，并且开始向处理室供应净化气体，此后，当经过预定时间时，停止施加高频电压。

公开(公告)号：US06184489B2

公开(公告)日：2001-02-06

申请号：US09290636

申请日：1999-04-12

申请人： Natsuko Ito ,  Fumihiko Uesugi ,  Tsuyoshi Moriya

发明人： Natsuko Ito ,  Fumihiko Uesugi ,  Tsuyoshi Moriya

IPC分类号： B23K1000

CPC分类号： H01J37/32431 ,  H01J2237/022 ,  H01L21/67069 ,  Y10S156/916

摘要： In a semiconductor device manufacturing apparatus that processing a substrate by applying a voltage to a gas to create a plasma, positively charged particles are trapped or guided at the instant that the cathode voltage is stopped, by an electrode to which is imparted a negative voltage, so as to prevent particles reaching the substrate.

摘要翻译： 在通过向气体施加电压以产生等离子体来处理衬底的半导体器件制造装置中，通过施加负电压的电极在正极电压停止的时刻捕获或引导带正电的粒子， 以防止颗粒到达基板。

公开(公告)号：US20060131272A1

公开(公告)日：2006-06-22

申请号：US11354506

申请日：2006-02-15

申请人： Natsuko Ito ,  Fumihiko Uesugi ,  Tsuyoshi Moriya

发明人： Natsuko Ito ,  Fumihiko Uesugi ,  Tsuyoshi Moriya

IPC分类号： C23F1/00

CPC分类号： H01J37/32431 ,  H01J2237/022 ,  H01L21/67069 ,  Y10S156/916

摘要： In a semiconductor device manufacturing apparatus that processing a substrate by applying a voltage to a gas to create a plasma, positively charged particles are trapped or guided at the instant that the cathode voltage is stopped, by an electrode to which is imparted a negative voltage, so as to prevent particles reaching the substrate.

公开(公告)号：US07045465B2

公开(公告)日：2006-05-16

申请号：US09971463

申请日：2001-10-05

申请人： Natsuko Ito ,  Fumihiko Uesugi ,  Tsuyoshi Moriya

发明人： Natsuko Ito ,  Fumihiko Uesugi ,  Tsuyoshi Moriya

IPC分类号： H01L21/3111

CPC分类号： H01J37/32431 ,  H01J2237/022 ,  H01L21/67069 ,  Y10S156/916

摘要： In a semiconductor device manufacturing apparatus that processing a substrate by applying a voltage to a gas to create a plasma, positively charged particles are trapped or guided at the instant that the cathode voltage is stopped, by an electrode to which is imparted a negative voltage, so as to prevent particles reaching the substrate.

摘要翻译： 在通过向气体施加电压以产生等离子体来处理衬底的半导体器件制造装置中，通过施加负电压的电极在正极电压停止的时刻捕获或引导带正电的粒子， 以防止颗粒到达基板。

公开(公告)号：US07006682B1

公开(公告)日：2006-02-28

申请号：US09656713

申请日：2000-09-07

申请人： Tsuyoshi Moriya ,  Fumihiko Uesugi ,  Natsuko Ito

发明人： Tsuyoshi Moriya ,  Fumihiko Uesugi ,  Natsuko Ito

IPC分类号： G06K9/00

CPC分类号： G01N15/1463 ,  G01N2015/1493

摘要： There is provided an apparatus for monitoring a size of a particle, including (a) a laser beam source which radiates a laser beam to an area in which particles exist, (b) a photodetector which receives the laser beam having been scattered by the particles, and outputs image data including brightness of pixels, (c) an area detector which detects pixels corresponding to an area on which the scattered laser beam is incident, based on the image data, (d) a maximum brightness detector which detects a maximum brightness among brightness of the pixels detected by the area detector, and (e) a measurement unit which compares the maximum brightness to a predetermined threshold brightness to thereby measure a relative size of the particles.

摘要翻译： 提供了一种用于监测颗粒尺寸的装置，包括（a）将激光束照射到存在颗粒的区域的激光束源，（b）接收由颗粒散射的激光束的光电检测器 ，输出包括像素亮度的图像数据，（c）基于图像数据检测与散射激光束入射的区域对应的像素的区域检测器，（d）检测最大亮度的最大亮度检测器 在由区域检测器检测到的像素的亮度之间，以及（e）测量单元，其将最大亮度与预定阈值亮度进行比较，从而测量颗粒的相对尺寸。

公开(公告)号：US06737666B1

公开(公告)日：2004-05-18

申请号：US09721703

申请日：2000-11-27

申请人： Natsuko Ito ,  Tsuyoshi Moriya ,  Fumihiko Uesugi ,  Yoshinori Kato ,  Masaru Aomori ,  Shuji Moriya ,  Mitsuhiro Tachibana

发明人： Natsuko Ito ,  Tsuyoshi Moriya ,  Fumihiko Uesugi ,  Yoshinori Kato ,  Masaru Aomori ,  Shuji Moriya ,  Mitsuhiro Tachibana

IPC分类号： G01N2149

CPC分类号： H01J37/32935 ,  C23C16/4405 ,  C23C16/52 ,  G01N21/49 ,  H01J37/32963 ,  Y10S438/905

摘要： A cleaning end point detecting apparatus detects an end point of a cleaning process in which contamination attached to an inner wall of a reaction chamber is removed by introducing a cleaning gas into the chamber to produce a cluster cloud and detached particles. An irradiating unit irradiates a laser beam onto the cluster cloud and the detached particles within the reaction chamber to produce a scattered laser beam. A monitoring unit monitors the scattered laser beam as a two-dimensional image information. A judging unit judges the end point of the cleaning process on the basis of the two-dimensional image information. Preferably, the judging unit judges, as the end point of the cleaning process, a time instant when neither the detached particles nor the cluster cloud are detected on the basis of the two-dimensional image information.

摘要翻译： 清洗终点检测装置检测清洁过程的终点，其中通过将清洁气体引入室中来除去附着在反应室内壁上的污染物，以产生簇云和分离的颗粒。 照射单元将激光束照射到聚簇云和反应室内的分离的颗粒以产生散射的激光束。 监视单元将散射的激光束监视为二维图像信息。 判断单元基于二维图像信息判断清洁处理的结束点。 优选地，判断单元基于二维图像信息来判断清除处理的结束点是否没有检测到分离的颗粒和簇云的时刻。