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    Sealed elastomer bonded Si electrodes and the like for reduced particle contamination in dielectric etch
    3.
    发明授权
    Sealed elastomer bonded Si electrodes and the like for reduced particle contamination in dielectric etch 有权
    密封弹性体结合的Si电极等用于在电介质蚀刻中减少颗粒污染

    公开(公告)号：US08789493B2

    公开(公告)日：2014-07-29

    申请号：US11352307

    申请日：2006-02-13

    申请人： Daxing Ren ,  Enrico Magni ,  Eric Lenz ,  Ren Zhou

    发明人： Daxing Ren ,  Enrico Magni ,  Eric Lenz ,  Ren Zhou

    IPC分类号： C23C16/50 ,  H01L21/306 ,  C23F1/00

    CPC分类号： H01J37/32532 ,  H01J37/32009 ,  Y10T156/10

    摘要： An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing having a backing member having a bonding surface, an inner electrode having a lower surface on one side and a bonding surface on the other side, and an outer electrode having a lower surface on one side and a bonding surface on the other side. At least one of the electrodes has a flange, which extends underneath at least a portion of the lower surface of the other electrode.

    摘要翻译： 一种用于半导体衬底加工的等离子体反应室的电极组件，具有具有接合面的背衬构件，具有一侧下表面的内电极和另一侧的接合面，以及外电极， 一侧和另一侧的接合表面。 至少一个电极具有凸缘，该凸缘在另一个电极的下表面的至少一部分的下方延伸。

    Sealed elastomer bonded Si electrodes and the like for reduced particle contamination in dielectric etch
    4.
    发明申请
    Sealed elastomer bonded Si electrodes and the like for reduced particle contamination in dielectric etch 有权
    密封弹性体结合的Si电极等用于在电介质蚀刻中减少颗粒污染

    公开(公告)号：US20070187038A1

    公开(公告)日：2007-08-16

    申请号：US11352307

    申请日：2006-02-13

    申请人： Daxing Ren ,  Enrico Magni ,  Eric Lenz ,  Ren Zhou

    发明人： Daxing Ren ,  Enrico Magni ,  Eric Lenz ,  Ren Zhou

    IPC分类号： B31B1/60 ,  C23F1/00

    CPC分类号： H01J37/32532 ,  H01J37/32009 ,  Y10T156/10

    摘要： An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing having a backing member having a bonding surface, an inner electrode having a lower surface on one side and a bonding surface on the other side, and an outer electrode having a lower surface on one side and a bonding surface on the other side. At least one of the electrodes has a flange, which extends underneath at least a portion of the lower surface of the other electrode.

    摘要翻译： 一种用于半导体衬底加工的等离子体反应室的电极组件，具有具有接合面的背衬构件，具有一侧下表面的内电极和另一侧的接合面，以及外电极， 一侧和另一侧的接合表面。 至少一个电极具有凸缘，该凸缘在另一个电极的下表面的至少一部分的下方延伸。

    METHOD AND APPARATUS FOR PHYSICAL CONFINEMENT OF A LIQUID MENISCUS OVER A SEMICONDUCTOR WAFER
    5.
    发明申请
    METHOD AND APPARATUS FOR PHYSICAL CONFINEMENT OF A LIQUID MENISCUS OVER A SEMICONDUCTOR WAFER 有权
    液晶显示器半导体波形的物理限制方法与装置

    公开(公告)号：US20120240963A1

    公开(公告)日：2012-09-27

    申请号：US13240657

    申请日：2011-09-22

    申请人： Enrico Magni ,  Eric Lenz

    发明人： Enrico Magni ,  Eric Lenz

    IPC分类号： B08B3/04 ,  B23P17/04

    CPC分类号： B23P17/04 ,  B08B3/08 ,  H01L21/67017 ,  H01L21/67051 ,  Y10T29/494

    摘要： Systems, methods and apparatus for making a chemical head including forming a first return chamber in the chemical head, forming a second return chamber in the chemical head, forming a plurality of first return conduits from a head surface to the first return chamber, forming a plurality of second return conduits from a head surface to the second return chamber and wherein at least one of the first return conduits and the second return conduits being formed at a first angle relative to the head surface, the first angle being greater than about 20 degrees to a meniscus plane normal.

    摘要翻译： 用于制造化学头的系统，方法和设备，包括在化学头中形成第一回流室，在化学头中形成第二回流室，从头表面到第一回流腔形成多个第一返回管道，形成 多个第二返回管道，从头表面到第二返回室，并且其中第一返回管道和第二返回管道中的至少一个相对于头部表面以第一角度形成，第一角度大于约20度 到弯月面正常。

    Method and Apparatus for Physical Confinement of a Liquid Meniscus over a Semiconductor Wafer
    6.
    发明申请
    Method and Apparatus for Physical Confinement of a Liquid Meniscus over a Semiconductor Wafer 有权
    半导体晶片上液体半月板物理限制的方法和装置

    公开(公告)号：US20100300492A1

    公开(公告)日：2010-12-02

    申请号：US12475466

    申请日：2009-05-29

    申请人： Enrico Magni ,  Eric Lenz

    发明人： Enrico Magni ,  Eric Lenz

    IPC分类号： B08B3/00

    CPC分类号： B23P17/04 ,  B08B3/08 ,  H01L21/67017 ,  H01L21/67051 ,  Y10T29/494

    摘要： Apparatus, methods and systems for physically confining a liquid medium applied over a semiconductor wafer include a first and a second chemical head that are disposed to cover at least a portion of a top and an underside surface of the semiconductor wafer. Each of the first and the second chemical heads include an angled inlet conduit at a leading edge of the respective chemical heads to deliver liquid chemistry into a pocket of meniscus in a single phase. The pocket of meniscus is defined over the portion of the top and underside surface of the semiconductor wafer covered by the chemical heads and is configured to receive and contain the liquid chemistry applied to the surface of the semiconductor wafer as a meniscus. A step is formed at a leading edge of the first and second chemical heads along an outer periphery of the pocket of meniscus to substantially confine the meniscus of the liquid chemistry within the pocket of meniscus. The step covers at least a portion of the pocket of meniscus and the step's height is sufficient to preserve confinement characteristic of the meniscus. An inner return conduit is defined within the pocket of meniscus at a trailing edge of the respective chemical heads and is used to remove the liquid chemistry from the surface of the semiconductor wafer in a single phase after the cleaning process.

    摘要翻译： 用于物理地限制施加在半导体晶片上的液体介质的装置，方法和系统包括设置成覆盖半导体晶片的顶表面和下表面的至少一部分的第一和第二化学头。 第一和第二化学头中的每一个包括在各个化学头的前缘处的成角度的入口导管，以将液体化学物质以单相输送到弯液面的凹穴中。 半月板的凹槽被限定在由化学头覆盖的半导体晶片的顶部和底侧表面的部分上，并且被配置为接收和容纳施加到半导体晶片的表面的液体化学物质作为弯液面。 在第一和第二化学头的前缘沿着弯液面的凹槽的外周形成台阶，以将液体化学物质的弯液面基本上限制在弯液面的凹槽中。 该台阶覆盖半月板袋的至少一部分，台阶的高度足以保持弯液面的密封特性。 内部返回导管限定在相应化学头的后缘处的弯月面的凹穴内，并且用于在清洁过程之后以单相从半导体晶片的表面去除液体化学物质。

    Method and apparatus for physical confinement of a liquid meniscus over a semiconductor wafer
    7.
    发明授权
    Method and apparatus for physical confinement of a liquid meniscus over a semiconductor wafer 有权
    在半导体晶片上液体弯液面的物理限制的方法和装置

    公开(公告)号：US08813764B2

    公开(公告)日：2014-08-26

    申请号：US12475466

    申请日：2009-05-29

    申请人： Enrico Magni ,  Eric Lenz

    发明人： Enrico Magni ,  Eric Lenz

    IPC分类号： B08B11/00

    CPC分类号： B23P17/04 ,  B08B3/08 ,  H01L21/67017 ,  H01L21/67051 ,  Y10T29/494

    摘要： Apparatus, methods and systems for physically confining a liquid medium applied over a semiconductor wafer include a first and a second chemical head that are disposed to cover at least a portion of a top and an underside surface of the semiconductor wafer. Each of the first and the second chemical heads include an angled inlet conduit at a leading edge of the respective chemical heads to deliver liquid chemistry into a pocket of meniscus in a single phase. The pocket of meniscus is defined over the portion of the top and underside surface of the semiconductor wafer covered by the chemical heads and is configured to receive and contain the liquid chemistry applied to the surface of the semiconductor wafer as a meniscus. A step is formed at a leading edge of the first and second chemical heads along an outer periphery of the pocket of meniscus to substantially confine the meniscus of the liquid chemistry within the pocket of meniscus. The step covers at least a portion of the pocket of meniscus and the step's height is sufficient to preserve confinement characteristic of the meniscus. An inner return conduit is defined within the pocket of meniscus at a trailing edge of the respective chemical heads and is used to remove the liquid chemistry from the surface of the semiconductor wafer in a single phase after the cleaning process.

    摘要翻译： 用于物理地限制施加在半导体晶片上的液体介质的装置，方法和系统包括设置成覆盖半导体晶片的顶表面和下表面的至少一部分的第一和第二化学头。 第一和第二化学头中的每一个包括在各个化学头的前缘处的成角度的入口导管，以将液体化学物质以单相输送到弯液面的凹穴中。 半月板的凹槽被限定在由化学头覆盖的半导体晶片的顶部和底侧表面的部分上，并且被配置为接收和容纳施加到半导体晶片的表面的液体化学物质作为弯液面。 在第一和第二化学头的前缘沿着弯液面的凹槽的外周形成台阶，以将液体化学物质的弯液面基本上限制在弯液面的凹槽中。 该台阶覆盖半月板袋的至少一部分，台阶的高度足以保持弯液面的密封特性。 内部返回导管限定在相应化学头的后缘处的弯月面的凹穴内，并且用于在清洁过程之后以单相从半导体晶片的表面去除液体化学物质。

    Method and apparatus for physical confinement of a liquid meniscus over a semiconductor wafer
    8.
    发明授权
    Method and apparatus for physical confinement of a liquid meniscus over a semiconductor wafer 有权
    在半导体晶片上液体弯液面的物理限制的方法和装置

    公开(公告)号：US08580045B2

    公开(公告)日：2013-11-12

    申请号：US13240657

    申请日：2011-09-22

    申请人： Enrico Magni ,  Eric Lenz

    发明人： Enrico Magni ,  Eric Lenz

    IPC分类号： B08B3/04

    CPC分类号： B23P17/04 ,  B08B3/08 ,  H01L21/67017 ,  H01L21/67051 ,  Y10T29/494

    摘要： Systems, methods and apparatus for making a chemical head including forming a first return chamber in the chemical head, forming a second return chamber in the chemical head, forming a plurality of first return conduits from a head surface to the first return chamber, forming a plurality of second return conduits from a head surface to the second return chamber and wherein at least one of the first return conduits and the second return conduits being formed at a first angle relative to the head surface, the first angle being greater than about 20 degrees to a meniscus plane normal.

    摘要翻译： 用于制造化学头的系统，方法和设备，包括在化学头中形成第一回流室，在化学头中形成第二回流室，从头表面到第一回流腔形成多个第一返回管道，形成 多个第二返回管道，从头表面到第二返回室，并且其中第一返回管道和第二返回管道中的至少一个相对于头部表面以第一角度形成，第一角度大于约20度 到弯月面正常。

    Methods and apparatus for in situ substrate temperature monitoring by electromagnetic radiation emission
    9.
    发明授权
    Methods and apparatus for in situ substrate temperature monitoring by electromagnetic radiation emission 有权
    通过电磁辐射发射进行原位底物温度监测的方法和装置

    公开(公告)号：US07341673B2

    公开(公告)日：2008-03-11

    申请号：US10640350

    申请日：2003-08-12

    申请人： Enrico Magni

    发明人： Enrico Magni

    IPC分类号： H01L21/302

    CPC分类号： G01K11/18 ,  H01J37/32935 ,  H01J2237/24585 ,  H01J2237/31732 ,  H01J2237/3174 ,  H01L21/31116 ,  H01L21/67248

    摘要： A method in a plasma processing system of determining the temperature of a substrate. The method includes providing a substrate comprising a set of materials, wherein the substrate being configured to absorb electromagnetic radiation comprising a first set of electromagnetic frequencies, to convert the first set of electromagnetic frequencies to a set of thermal vibrations, and to transmit a second set of electromagnetic frequencies. The method also includes positioning the substrate on a substrate support structure, wherein the substrate support structure includes a chuck; flowing an etchant gas mixture into a plasma reactor of the plasma processing system; and striking the etchant gas mixture to create a plasma, wherein the plasma comprises the first set of electromagnetic frequencies. The method further includes processing the substrate with the plasma thereby generating the second set of electromagnetic frequencies; calculating a magnitude of the second set of electromagnetic frequencies; and converting the magnitude to a temperature value.

    摘要翻译： 一种等离子体处理系统中确定衬底温度的方法。 该方法包括提供包括一组材料的衬底，其中衬底被配置为吸收包括第一组电磁频率的电磁辐射，以将第一组电磁频率转换成一组热振动，并且传输第二组 的电磁频率。 该方法还包括将衬底定位在衬底支撑结构上，其中衬底支撑结构包括卡盘; 将蚀刻气体混合物流入等离子体处理系统的等离子体反应器; 并且撞击所述蚀刻剂气体混合物以产生等离子体，其中所述等离子体包括所述第一组电磁频率。 该方法还包括用等离子体处理衬底，从而产生第二组电磁频率; 计算第二组电磁频率的幅度; 并将幅值转换为温度值。