公开(公告)号：US12033838B2

公开(公告)日：2024-07-09

申请号：US17196089

申请日：2021-03-09

Applicant: TOKYO ELECTRON LIMITED

Inventor： Joji Takayoshi ,  Ryuta Akimoto ,  Takehito Watanabe

IPC: H01J37/32 ,  H01J37/244 ,  H01L21/67

CPC classification number: H01J37/32935 ,  H01J37/32605 ,  H01J37/32807 ,  H01J37/32917 ,  H01J37/244 ,  H01J37/32091 ,  H01J37/32642 ,  H01L21/67069

Abstract: A plasma processing apparatus including a processing container and a conductive member, includes a plasma generator configured to generate plasma in the processing container, a power application part configured to apply a DC power to the conductive member in a state in which plasma is generated in the processing container by the plasma generator, a measurement part configured to measure a physical quantity related to the DC power applied by the power application part, and a calculator configured to obtain a wear amount of the conductive member using the measured physical quantity related to the DC power in a correlation function between the wear amount of the conductive member and the physical quantity related to the DC power.

公开(公告)号：US09728379B2

公开(公告)日：2017-08-08

申请号：US13119106

申请日：2009-09-03

Applicant: Fenggang Zhang

Inventor： Fenggang Zhang

IPC: C23C14/50 ,  H01L21/67 ,  H01J37/32 ,  H01L21/683 ,  H01L21/687

CPC classification number: H01J37/32568 ,  C23C14/50 ,  H01J37/32009 ,  H01J37/32605 ,  H01J37/32715 ,  H01L21/67069 ,  H01L21/6831 ,  H01L21/68785 ,  H01L21/68792

Abstract: A plasma processing apparatus (5) comprises an outer shell (51) which is provided with a reaction chamber (52) in the interior, a bottom electrode which is arranged in the reaction chamber (52) and a cantilever support device (53) which goes through the outer shell (51) and supports the bottom electrode. The cantilever support device (53) is pivotally mounted on the side wall of the outer shell (51) and can rotate in the outer shell (51). The plasma processing apparatus (5) further comprises a locating device so as to selectively fix the relative position of the cantilever support device (53) and the outer shell (51).

公开(公告)号：US20170213753A1

公开(公告)日：2017-07-27

申请号：US15394070

申请日：2016-12-29

Applicant: Applied Materials, Inc.

Inventor： James ROGERS

IPC: H01L21/683 ,  H01L21/67 ,  H01J37/32 ,  H01L21/687

CPC classification number: H01L21/6833 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32577 ,  H01J37/32605 ,  H01J37/32697 ,  H01J37/32715 ,  H01J37/3288 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/67017 ,  H01L21/67103 ,  H01L21/6719 ,  H01L21/6831 ,  H01L21/68735 ,  H01L21/68785

Abstract: The present disclosure generally relates to apparatuses and methods that control RF amplitude of an edge ring. The apparatuses and methods include an electrode that is coupled to ground through a variable capacitor. The electrode may be ring-shaped and embedded in a substrate support including an electrostatic chuck. The electrode may be positioned beneath the perimeter of a substrate and/or the edge ring. As the plasma sheath drops adjacent the edge ring due to edge ring erosion, the capacitance of the variable capacitor is adjusted in order to affect the RF amplitude near the edge of the substrate. Adjustment of the RF amplitude via the electrode and variable capacitor results in adjustment of the plasma sheath near the substrate perimeter.

公开(公告)号：US20170103876A1

公开(公告)日：2017-04-13

申请号：US15035074

申请日：2015-11-13

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiangjun TIAN ,  Seiji FUJINO

IPC: H01J37/32 ,  C23C16/52 ,  C23C16/50 ,  H01L21/02 ,  C23C16/24

CPC classification number: H01J37/32568 ,  C23C16/24 ,  C23C16/50 ,  C23C16/52 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32522 ,  H01J37/32541 ,  H01J37/32605 ,  H01J37/32752 ,  H01J2237/3321 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02689 ,  H01L21/02691 ,  H05H1/46 ,  H05H2001/466

Abstract: A plasma generator, a plasma annealing device, a deposition crystallization apparatus and a plasma annealing process are disclosed. The plasma generator includes: a gas chamber; a gas intake member configured to introduce a gas into the gas chamber; a cathode and an anode that are configured to apply an electric field to the gas introduced into the gas chamber to ionize the gas into plasma; a cooling water circulation member configured to control a temperature of the plasma generator; and a plasma beam outlet disposed on a top face of the gas chamber. The plasma annealing device including the plasma generator can generate a plasma beam, which can be used in annealing to amorphous silicon and crystallize the amorphous silicon to polycrystalline silicon.

公开(公告)号：US09412579B2

公开(公告)日：2016-08-09

申请号：US13766238

申请日：2013-02-13

Applicant: Applied Materials, Inc.

Inventor： S. M. Reza Sadjadi ,  Dmitry Lubomirsky ,  Hamid Noorbakhsh ,  John Zheng Ye ,  David H. Quach ,  Sean S. Kang

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/683 ,  H01L21/687

CPC classification number: H01L22/20 ,  C23C14/22 ,  C23C16/44 ,  H01J37/32082 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32541 ,  H01J37/32605 ,  H01J37/32642 ,  H01J37/32697 ,  H01J2237/334 ,  H01L21/02104 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6833 ,  H01L21/68735

Abstract: A dynamically tunable process kit, a processing chamber having a dynamically tunable process kit, and a method for processing a substrate using a dynamically tunable process kit are provided. The dynamically tunable process kit allows one or both of the electrical and thermal state of the process kit to be changed without changing the physical construction of the process kit, thereby allowing plasma properties, and hence processing results, to be easily changed without replacing the process kit. The processing chamber having a dynamically tunable process kit includes a chamber body that includes a portion of a conductive side wall configured to be electrically controlled, and a process kit. The processing chamber includes a first control system operable to control one or both of an electrical and thermal state of the process kit and a second control system operable to control an electrical state of the portion of the side wall.

Abstract translation: 提供了一种动态可调工艺套件，具有动态可调工艺套件的处理室以及使用动态可调工艺套件处理衬底的方法。 动态可调工艺套件可以改变工艺套件的电气和热态，而不改变工艺套件的物理结构，从而可以容易地改变等离子体性能，从而使处理结果更换，而无需更换过程 套件 具有可动态调节的处理套件的处理室包括腔室主体，其包括被配置为电控制的导电侧壁的一部分，以及处理套件。 处理室包括可操作以控制处理套件的电气和热状态中的一个或两个的第一控制系统和可操作以控制侧壁部分的电气状态的第二控制系统。

公开(公告)号：US20140154888A1

公开(公告)日：2014-06-05

申请号：US14170732

申请日：2014-02-03

Applicant: Lam Research Corporation

Inventor： Tom Stevenson ,  Rajinder Dhindsa

IPC: H01L21/3065 ,  H01L21/67

CPC classification number: H01L21/3065 ,  C23C16/45565 ,  C23C16/52 ,  H01J37/32091 ,  H01J37/32532 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32605 ,  H01L21/67069

Abstract: Showerhead electrode assemblies are disclosed, which include a showerhead electrode adapted to be mounted in an interior of a vacuum chamber; an optional backing plate attached to the showerhead electrode; a thermal control plate attached to the backing plate or to the showerhead electrode at multiple contact regions across the backing plate; and at least one interface member separating the backing plate and the thermal control plate, or the thermal control plate and showerhead electrode, at the contact regions, the interface member having a thermally and electrically conductive gasket portion and a particle mitigating seal portion. Methods of processing semiconductor substrates using the showerhead electrode assemblies are also disclosed.

Abstract translation: 公开了一种喷头电极组件，其包括适于安装在真空室内部的喷头电极; 连接到喷头电极的可选背板; 热控制板，其在跨过所述背板的多个接触区域附接到所述背板或所述喷头电极; 以及至少一个界面构件，其在所述接触区域处分离所述背板和所述热控制板或所述热控制板和喷头电极，所述界面构件具有导热和导电的垫圈部分和颗粒减轻密封部分。 还公开了使用喷头电极组件处理半导体衬底的方法。

公开(公告)号：US20140087587A1

公开(公告)日：2014-03-27

申请号：US13667338

申请日：2012-11-02

Applicant: Novellus Systems, Inc.

Inventor： Gary Lind

IPC: H01R13/434 ,  H01R43/26

CPC classification number: H01R13/434 ,  C23C16/4583 ,  C23C16/509 ,  H01J37/32532 ,  H01J37/32577 ,  H01J37/32605 ,  H01L21/68792 ,  H01R13/2407 ,  H01R35/04 ,  H01R43/26 ,  Y10T29/49117

Abstract: Embodiments include a high temperature electrode connection assembly for a wafer-processing pedestal. The high temperature electrode connection assembly includes an electrode rod having a cup that mounts to a stud embedded in the pedestal and a plate adapter portion. The assembly also includes a floating plate having an outer surface and an aperture for receiving the electrode rod. The floating plate contacts an inner surface of the pedestal to resist lateral movement of the electrode rods. The assembly also includes an anti-rotation retainer ring that frictionally engages the electrode rod and an anti-rotation post extending from the outer surface of the floating plate. The anti-rotation post limits rotation of the electrode rod with respect to the floating plate.

Abstract translation: 实施例包括用于晶片处理基座的高温电极连接组件。 高温电极连接组件包括具有安装到嵌入在基座中的螺柱的杯的电极杆和板适配器部分。 组件还包括具有外表面和用于接收电极棒的孔的浮动板。 浮板接触基座的内表面以抵抗电极棒的横向移动。 组件还包括摩擦接合电极棒的防旋转保持环和从浮动板的外表面延伸的防旋转柱。 防转动柱限制了电极杆相对于浮动板的旋转。

公开(公告)号：US08536071B2

公开(公告)日：2013-09-17

申请号：US13591039

申请日：2012-08-21

Applicant: Gregory R. Bettencourt ,  Gautam Bhattacharyya ,  Simon Gosselin ,  Sandy Chao

Inventor： Gregory R. Bettencourt ,  Gautam Bhattacharyya ,  Simon Gosselin ,  Sandy Chao

IPC: H01L21/00 ,  H05H1/24 ,  C23C16/50 ,  C23C16/509 ,  C23C16/455 ,  C23C16/22

CPC classification number: H01L21/67069 ,  H01J37/16 ,  H01J37/3244 ,  H01J37/32541 ,  H01J37/32605 ,  H01J2237/166

Abstract: An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing. The assembly includes an upper showerhead electrode which is mechanically attached to a backing plate by a series of spaced apart cam locks. A thermally and electrically conductive gasket with projections thereon is compressed between the showerhead electrode and the backing plate at a location three to four inches from the center of the showerhead electrode. A guard ring surrounds the backing plate and is movable to positions at which openings in the guard ring align with openings in the backing plate so that the cam locks can be rotated with a tool to release locking pins extending from the upper face of the electrode.

Abstract translation: 用于等离子体反应室的电极组件，用于半导体衬底处理。 该组件包括上部喷头电极，其通过一系列间隔开的凸轮锁定机械地附接到背板。 在其上具有突起的导电和导电垫片在喷头电极和背板之间在距离喷头电极的中心三至四英寸的位置处被压缩。 保护环围绕背板并且可移动到保护环中的开口与背板中的开口对准的位置，使得凸轮锁可以用工具旋转以释放从电极的上表面延伸的锁定销。

公开(公告)号：US08171877B2

公开(公告)日：2012-05-08

申请号：US12164285

申请日：2008-06-30

Applicant: Jason Augustino ,  Armen Avoyan ,  Yan Fang ,  Duane Outka ,  Hong Shih ,  Stephen Whitten

Inventor： Jason Augustino ,  Armen Avoyan ,  Yan Fang ,  Duane Outka ,  Hong Shih ,  Stephen Whitten

IPC: B05C13/00 ,  B05C13/02 ,  B05C21/00 ,  C23C16/00 ,  C23C16/50 ,  C23F1/00 ,  H01L21/306

CPC classification number: H01J37/32568 ,  H01J37/32091 ,  H01J37/32605

Abstract: A carrier assembly is provided comprising a backside mounted electrode carrier and electrode mounting hardware. The backside mounted electrode carrier comprises an electrode accommodating aperture, which in turn comprises a sidewall structure that is configured to limit lateral movement of an electrode positioned in the aperture. The electrode accommodating aperture further comprises one or more sidewall projections that support the weight of an electrode positioned in the aperture. The electrode mounting hardware is configured to engage an electrode positioned in the electrode accommodating aperture from the backside of the carrier and urge the electrode against the sidewall projections so as to limit axial movement of the electrode in the electrode accommodating aperture. Additional embodiments of broader and narrower scope are contemplated.

Abstract translation: 提供的载体组件包括背面安装的电极载体和电极安装硬件。 背面安装的电极载体包括电极容纳孔，电极容纳孔又包括被配置为限制定位在孔中的电极的横向移动的侧壁结构。 电极容纳孔还包括支撑位于孔中的电极的重量的一个或多个侧壁突起。 电极安装硬件被配置成从位于载体的背面的电极容纳孔中的电极接合，并且将电极推靠在侧壁突起上，以限制电极在电极容纳孔中的轴向移动。 考虑到更广泛和更窄范围的另外的实施例。

公开(公告)号：US20110155322A1

公开(公告)日：2011-06-30

申请号：US12979875

申请日：2010-12-28

Applicant: Shinji HIMORI ,  Daisuke Hayashi ,  Akitaka Shimizu

Inventor： Shinji HIMORI ,  Daisuke Hayashi ,  Akitaka Shimizu

IPC: C23F1/08

CPC classification number: H01L21/67069 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/3255 ,  H01J37/32577 ,  H01J37/32605

Abstract: A plasma processing apparatus includes a processing chamber in which a target substrate is processed; an application electrode and a facing electrode provided to face each other in the processing chamber, a plasma generation space being formed between the application electrode and the facing electrode; and an RF power supply connected to the application electrode, an RF power being supplied from the RF power supply to the application electrode. At least one of the application electrode and the facing electrode includes a base formed of a metal, and a dielectric body inserted into the base, one or more metal plate electrodes being buried in the dielectric body.

Abstract translation: 等离子体处理装置包括：处理室，其中处理目标基板; 在处理室中设置成面对的施加电极和对置电极，在施加电极和对置电极之间形成等离子体产生空间; 以及连接到施加电极的RF电源，RF电力从RF电源提供给施加电极。 施加电极和对置电极中的至少一个包括由金属形成的基底和插入到基底中的电介质体，一个或多个金属板电极被埋在电介质体内。