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    Process and apparatus for preparing heterogeneous catalysts
    1.
    发明授权
    Process and apparatus for preparing heterogeneous catalysts 失效
    制备非均相催化剂的方法和装置

    公开(公告)号：US06534431B1

    公开(公告)日：2003-03-18

    申请号：US08881254

    申请日：1997-06-24

    申请人： Tuomo Suntola ,  Eeva-Liisa Lakomaa ,  Hilkka Knuuttila ,  Pekka Knuuttila ,  Outi Krause ,  Sven Lindfors

    发明人： Tuomo Suntola ,  Eeva-Liisa Lakomaa ,  Hilkka Knuuttila ,  Pekka Knuuttila ,  Outi Krause ,  Sven Lindfors

    IPC分类号： C23L1608

    CPC分类号： B01J37/0238 ,  B01J23/26 ,  B01J23/36 ,  B01J29/061

    摘要： The invention relates to a process and to an apparatus for preparing a heterogeneous catalyst having at least one catalytically active species bound to the surface of a support material. According to the process, the surface of the support is first pretreated. A catalyst reagent containing the catalytically active species or its precursor is vaporized and the vapor is routed into a reaction chamber where it is brought to interact with the support material. The catalyst reagent not bound to the support is withdrawn from the reaction chamber in gaseous form. If necessary, the species bound to the support is posttreated in order to convert it into a catalytically active form. According to the invention, the amount of catalyst reagent brought into the reaction chamber is at least equal to, preferably in excess of the number of available binding sites on the surface. The temperature of the support of kept higher than the condensation temperature of the vapor and at the same time at a sufficiently high level to attain the thermal activation energy needed for forming bonds between the active species and the support. By binding the catalytically active species in this way to the support it is possible to provide a heterogeneous catalyst having a high activity even at small amounts of the active species.

    摘要翻译： 本发明涉及一种制备具有结合到载体材料表面的至少一种催化活性物质的多相催化剂的方法和装置。 根据该方法，首先预处理载体的表面。 含有催化活性物质或其前体的催化剂试剂被蒸发，并且蒸气被引导到反应室中，在该反应室中使其与载体材料相互作用。 未与载体结合的催化剂试剂以气态形式从反应室中排出。 如果需要，结合到载体上的物质进行后处理，以将其转化为催化活性形式。 根据本发明，进入反应室的催化剂试剂的量至少等于，优选地超过表面上可用结合位点的数量。 载体的温度保持高于蒸气的冷凝温度，并且同时具有足够高的水平以获得在活性物质和载体之间形成键所需的热活化能。 通过将催化活性物质以这种方式结合到载体上，即使在少量的活性物质中也可以提供具有高活性的多相催化剂。

    METHOD FOR GROWING THIN FILMS
    3.
    发明申请
    METHOD FOR GROWING THIN FILMS 失效
    生长薄膜的方法

    公开(公告)号：US20090181169A1

    公开(公告)日：2009-07-16

    申请号：US12361139

    申请日：2009-01-28

    申请人： Tuomo Suntola ,  Sven Lindfors

    发明人： Tuomo Suntola ,  Sven Lindfors

    IPC分类号： C23C16/44

    CPC分类号： C23C16/45525 ,  C23C16/455 ,  C23C16/45527 ,  C23C16/45546 ,  C30B25/10 ,  C30B25/14

    摘要： The invention relates to a method and apparatus for growing a thin film onto a substrate, in which method a substrate placed in a reaction space (21) is subjected to alternately repeated surface reactions of at least two vapor-phase reactants for the purpose of forming a thin film. According to the method, said reactants are fed in the form of vapor-phase pulses repeatedly and alternately, each reactant separately from its own source, into said reaction space (21), and said vapor-phase reactants are brought to react with the surface of the substrate for the purpose of forming a solid-state thin film compound on said substrate. According to the invention, the gas volume of said reaction space is evacuated by means of a vacuum pump essentially totally between two successive vapor-phase reactant pulses. By virtue of transporting the different starting material species at different times through the apparatus effectively isolates the starting materials from each other thus preventing their premature mutual reactions.

    摘要翻译： 本发明涉及一种用于将薄膜生长到基底上的方法和装置，其中放置在反应空间（21）中的基底经受至少两种气相反应物的交替重复的表面反应，以形成 一个薄膜。 根据该方法，所述反应物以气相脉冲的形式反复地且交替地以每种反应物与其自身源分开进入所述反应空间（21），并使所述气相反应物与表面反应 的基板，用于在所述基板上形成固态薄膜化合物。 根据本发明，通过基本上完全在两个连续的气相反应物脉冲之间的真空泵将所述反应空间的气体体积抽真空。 由于通过装置在不同时间运送不同的起始物质，有效地将原料彼此隔离，从而防止其过早的相互反应。

    Method and equipment for growing thin films
    4.
    发明授权
    Method and equipment for growing thin films 失效
    生长薄膜的方法和设备

    公开(公告)号：US5711811A

    公开(公告)日：1998-01-27

    申请号：US682703

    申请日：1996-10-02

    申请人： Tuomo Suntola ,  Sven Lindfors ,  Pekka Soininen

    发明人： Tuomo Suntola ,  Sven Lindfors ,  Pekka Soininen

    IPC分类号： C30B25/02 ,  C23C8/06 ,  C23C10/06 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/52 ,  C30B25/14 ,  C30B35/00 ,  C23C16/00

    CPC分类号： C23C16/45546 ,  C23C10/06 ,  C23C16/45502 ,  C23C8/06 ,  C30B25/14

    摘要： The invention relates to equipment for growing a thin film onto a substrate. The equipment suited to implement the invention comprises a reaction space having a reaction chamber therein into which a substrate is placed and is subjected to alternately repeated surface reactions of at least two vapor-phase reactants for the purpose of forming a thin film. The equipment further comprises recesses/openings communicating with the reaction space to form gas inflow and outflow channels. The reactants are fed in the form of vapor-phase pulses repeatedly and alternately into the reaction space through the inflow channels, each reactant separately from its own source. The vapor-phase reactants are brought to react with the surface of the substrate for the purpose of forming a solid-state thin film compound on said substrate. The gaseous reaction products and possible excess reactants are removed in gas phase from the reaction space via the outflow channels.

    摘要翻译： PCT No.PCT / FI95 / 00659 Sec。 371日期1996年10月2日第 102（e）日期1996年10月2日PCT提交1995年11月28日PCT公布。 公开号WO96 / 17969 日期1996年6月13日本发明涉及在基板上生长薄膜的设备。 适用于实施本发明的设备包括其中具有反应室的反应空间，其中放置基底，并且为了形成薄膜而经受至少两种气相反应物的交替重复的表面反应。 设备还包括与反应空间连通以形成气体流入和流出通道的凹部/开口。 反应物以汽相脉冲的形式通过流入通道反复交替地进入反应空间，每个反应物与其自身源分开。 使气相反应物与基材的表面反应，以便在所述基材上形成固态薄膜化合物。 气态反应产物和可能的过量反应物在气相中通过流出通道从反应空间中除去。

    Method for growing thin films
    5.
    发明授权
    Method for growing thin films 失效
    生长薄膜的方法

    公开(公告)号：US07404984B2

    公开(公告)日：2008-07-29

    申请号：US09855321

    申请日：2001-05-14

    申请人： Tuomo Suntola ,  Sven Lindfors

    发明人： Tuomo Suntola ,  Sven Lindfors

    IPC分类号： C23C16/00

    CPC分类号： C23C16/45525 ,  C23C16/455 ,  C23C16/45527 ,  C23C16/45546 ,  C30B25/10 ,  C30B25/14

    摘要： The invention relates to a method and apparatus for growing a thin film onto a substrate, in which method a substrate placed in a reaction space (21) is subjected to alternately repeated surface reactions of at least two vapor-phase reactants for the purpose of forming a thin film. According to the method, said reactants are fed in the form of vapor-phase pulses repeatedly and alternately, each reactant separately from its own source, into said reaction space (21), and said vapor-phase reactants are brought to react with the surface of the substrate for the purpose of forming a solid-state thin film compound on said substrate. According to the invention, the gas volume of said reaction space is evacuated by means of a vacuum pump essentially totally between two successive vapor-phase reactant pulses. By virtue of transporting the different starting material species at different times through the apparatus effectively isolates the starting materials from each other thus preventing their premature mutual reactions.

    摘要翻译： 本发明涉及一种用于将薄膜生长到基底上的方法和装置，其中放置在反应空间（21）中的基底经受至少两种气相反应物的交替重复的表面反应，以形成 一个薄膜。 根据该方法，所述反应物以气相脉冲的形式反复地且交替地以每种反应物与其自身源分开进入所述反应空间（21），并使所述气相反应物与表面反应 的基板，用于在所述基板上形成固态薄膜化合物。 根据本发明，通过基本上完全在两个连续的气相反应物脉冲之间的真空泵将所述反应空间的气体体积抽真空。 由于通过装置在不同时间运送不同的起始物质，有效地将原料彼此隔离，从而防止其过早的相互反应。

    METHOD FOR GROWING THIN FILMS
    6.
    发明申请
    METHOD FOR GROWING THIN FILMS 失效
    生长薄膜的方法

    公开(公告)号：US20080138518A1

    公开(公告)日：2008-06-12

    申请号：US11949688

    申请日：2007-12-03

    申请人： Tuomo Suntola ,  Sven Lindfors

    发明人： Tuomo Suntola ,  Sven Lindfors

    IPC分类号： C23C16/06 ,  C23C16/448

    CPC分类号： C23C16/45525 ,  C23C16/455 ,  C23C16/45527 ,  C23C16/45546 ,  C30B25/10 ,  C30B25/14

    摘要： The invention relates to a method and apparatus for growing a thin film onto a substrate, in which method a substrate placed in a reaction space (21) is subjected to alternately repeated surface reactions of at least two vapor-phase reactants for the purpose of forming a thin film. According to the method, said reactants are fed in the form of vapor-phase pulses repeatedly and alternately, each reactant separately from its own source, into said reaction space (21), and said vapor-phase reactants are brought to react with the surface of the substrate for the purpose of forming a solid-state thin film compound on said substrate. According to the invention, the gas volume of said reaction space is evacuated by means of a vacuum pump essentially totally between two successive vapor-phase reactant pulses. By virtue of transporting the different starting material species at different times through the apparatus effectively isolates the starting materials from each other thus preventing their premature mutual reactions.

    摘要翻译： 本发明涉及一种用于将薄膜生长到基底上的方法和装置，其中放置在反应空间（21）中的基底经受至少两种气相反应物的交替重复的表面反应，以形成 一个薄膜。 根据该方法，所述反应物以气相脉冲的形式反复地且交替地以每种反应物与其自身源分开进入所述反应空间（21），并使所述气相反应物与表面反应 的基板，用于在所述基板上形成固态薄膜化合物。 根据本发明，通过基本上完全在两个连续的气相反应物脉冲之间的真空泵将所述反应空间的气体体积抽真空。 由于通过装置在不同时间运送不同的起始物质，有效地将原料彼此隔离，从而防止其过早的相互反应。

    Method for growing thin films
    7.
    发明授权
    Method for growing thin films 失效

    公开(公告)号：US08507039B2

    公开(公告)日：2013-08-13

    申请号：US12361139

    申请日：2009-01-28

    申请人： Tuomo Suntola ,  Sven Lindfors

    发明人： Tuomo Suntola ,  Sven Lindfors

    IPC分类号： C23C16/00

    CPC分类号： C23C16/45525 ,  C23C16/455 ,  C23C16/45527 ,  C23C16/45546 ,  C30B25/10 ,  C30B25/14

    摘要： The invention relates to a method and apparatus for growing a thin film onto a substrate, in which method a substrate placed in a reaction space (21) is subjected to alternately repeated surface reactions of at least two vapor-phase reactants for the purpose of forming a thin film. According to the method, said reactants are fed in the form of vapor-phase pulses repeatedly and alternately, each reactant separately from its own source, into said reaction space (21), and said vapor-phase reactants are brought to react with the surface of the substrate for the purpose of forming a solid-state thin film compound on said substrate. According to the invention, the gas volume of said reaction space is evacuated by means of a vacuum pump essentially totally between two successive vapor-phase reactant pulses. By virtue of transporting the different starting material species at different times through the apparatus effectively isolates the starting materials from each other thus preventing their premature mutual reactions.

    Method and apparatus for growing thin films
    8.
    发明授权
    Method and apparatus for growing thin films 有权
    生长薄膜的方法和装置

    公开(公告)号：US06572705B1

    公开(公告)日：2003-06-03

    申请号：US09482625

    申请日：2000-01-14

    申请人： Tuomo Suntola ,  Sven Lindfors

    发明人： Tuomo Suntola ,  Sven Lindfors

    IPC分类号： C23C1600

    CPC分类号： C23C16/45525 ,  C23C16/455 ,  C23C16/45527 ,  C23C16/45546 ,  C30B25/10 ,  C30B25/14

    摘要： The invention relates to a method and apparatus for growing a thin film onto a substrate, in which method a substrate placed in a reaction space (21) is subjected to alternately repeated surface reactions of at least two vapor-phase reactants for the purpose of forming a thin film. According to the method, said reactants are fed in the form of vapor-phase pulses repeatedly and alternately, each reactant separately from its own source, into said reaction space (21), and said vapor-phase reactants are brought to react with the surface of the substrate for the purpose of forming a solid-state thin film compound on said substrate. According to the invention, the gas volume of said reaction space is evacuated by means of a vacuum pump essentially totally between two successive vapor-phase reactant pulses. By virtue of transporting the different starting material species at different times through the apparatus effectively isolates the starting materials from each other thus preventing their premature mutual reactions.

    摘要翻译： 本发明涉及一种用于将薄膜生长到基底上的方法和装置，其中放置在反应空间（21）中的基底经受至少两种气相反应物的交替重复的表面反应，以形成 一个薄膜。 根据该方法，所述反应物以气相脉冲的形式反复地且交替地以每种反应物与其自身源分开进入所述反应空间（21），并使所述气相反应物与表面反应 的基板，用于在所述基板上形成固态薄膜化合物。 根据本发明，通过基本上完全在两个连续的气相反应物脉冲之间的真空泵将所述反应空间的气体体积抽真空。 由于通过装置在不同时间运送不同的起始物质，有效地将原料彼此隔离，从而防止其过早的相互反应。

    Method for growing thin films
    9.
    发明授权
    Method for growing thin films 失效

    公开(公告)号：US07498059B2

    公开(公告)日：2009-03-03

    申请号：US11949688

    申请日：2007-12-03

    申请人： Tuomo Suntola ,  Sven Lindfors

    发明人： Tuomo Suntola ,  Sven Lindfors

    IPC分类号： C23C16/00

    CPC分类号： C23C16/45525 ,  C23C16/455 ,  C23C16/45527 ,  C23C16/45546 ,  C30B25/10 ,  C30B25/14

    摘要： The invention relates to a method and apparatus for growing a thin film onto a substrate, in which method a substrate placed in a reaction space (21) is subjected to alternately repeated surface reactions of at least two vapor-phase reactants for the purpose of forming a thin film. According to the method, said reactants are fed in the form of vapor-phase pulses repeatedly and alternately, each reactant separately from its own source, into said reaction space (21), and said vapor-phase reactants are brought to react with the surface of the substrate for the purpose of forming a solid-state thin film compound on said substrate. According to the invention, the gas volume of said reaction space is evacuated by means of a vacuum pump essentially totally between two successive vapor-phase reactant pulses. By virtue of transporting the different starting material species at different times through the apparatus effectively isolates the starting materials from each other thus preventing their premature mutual reactions.

    Method for growing thin films
    10.
    发明授权
    Method for growing thin films 失效
    生长薄膜的方法

    公开(公告)号：US6015590A

    公开(公告)日：2000-01-18

    申请号：US682705

    申请日：1996-09-25

    申请人： Tuomo Suntola ,  Sven Lindfors

    发明人： Tuomo Suntola ,  Sven Lindfors

    IPC分类号： C30B25/02 ,  C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  C30B25/10 ,  C30B25/14 ,  C30B29/46 ,  C30B35/00 ,  C23C16/00

    CPC分类号： C23C16/45525 ,  C23C16/455 ,  C23C16/45527 ,  C23C16/45546 ,  C30B25/10 ,  C30B25/14

    摘要： A method for growing a thin film on a substrate. A substrate is placed in a reaction space. The substrate is subjected to at least two vapor phase reactants in the form of vapor phase pulses, repeatedly and alternately. Gas within the reaction space is purged between two successive vapor phase pulses essentially entirely by use of a pump connected to the reaction space. The reaction space is purged between two successive vapor phase pulses such that less than 1% of the residual components from the first vapor phase pulse remains prior to the inflow of the second vapor phase pulse.

    摘要翻译： PCT No.PCT / FI95 / 00658 Sec。 371日期1996年9月25日 102（e）日期1996年9月25日PCT提交1995年11月28日PCT公布。 WO96 / 17107 PCT出版物 日期1996年6月6日在衬底上生长薄膜的方法。 将底物置于反应空间中。 基板以气相脉冲的形式经历至少两个气相反应物，并且交替地进行。 反应空间内的气体基本上完全通过使用连接到反应空间的泵在两个连续的气相脉冲之间被清除。 反应空间在两个连续的气相脉冲之间被清除，使得来自第一气相脉冲的少于1％的残余组分在第二气相脉冲的流入之前保持。