公开(公告)号：US11929213B2

公开(公告)日：2024-03-12

申请号：US16854887

申请日：2020-04-21

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Purakh Raj Verma ,  Ching-Yang Wen ,  Xingxing Chen ,  Chao Jin

IPC: H01G4/38 ,  H01G4/008 ,  H01L21/288 ,  H01L21/321 ,  H01L23/522 ,  H01L23/528 ,  H01L27/01 ,  H01L49/02

CPC classification number: H01G4/385 ,  H01G4/008 ,  H01L21/2885 ,  H01L21/3212 ,  H01L23/5226 ,  H01L23/528 ,  H01L27/01 ,  H01L28/75 ,  H01L28/91

Abstract: A structure of capacitors connected in parallel includes a substrate. A trench embedded in the substrate. Numerous electrode layers respectively conformally fill in and cover the trench. The electrode layers are formed of numerous nth electrode layers, wherein n is a positive integer from 1 to M, and M is not less than 3. The nth electrode layer with smaller n is closer to the sidewall of the trench. When n equals to M, the Mth electrode layer fills in the center of the trench, and the top surface of the Mth electrode is aligned with the top surface of the substrate. A capacitor dielectric layer is disposed between the adjacent electrode layers. A first conductive plug contacts the nth electrode layer with odd-numbered n. A second conductive plug contacts the nth electrode layer with even-numbered n.

公开(公告)号：US11955292B2

公开(公告)日：2024-04-09

申请号：US17987766

申请日：2022-11-15

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Purakh Raj Verma ,  Ching-Yang Wen ,  Xingxing Chen ,  Chao Jin

IPC: H01G4/38 ,  H01G4/008 ,  H01L21/288 ,  H01L21/321 ,  H01L23/522 ,  H01L23/528 ,  H01L27/01 ,  H01L49/02

CPC classification number: H01G4/385 ,  H01G4/008 ,  H01L21/2885 ,  H01L21/3212 ,  H01L23/5226 ,  H01L23/528 ,  H01L27/01 ,  H01L28/75 ,  H01L28/91

Abstract: A structure of capacitors connected in parallel includes a substrate. A trench embedded in the substrate. Numerous electrode layers respectively conformally fill in and cover the trench. The electrode layers are formed of numerous nth electrode layers, wherein n is a positive integer from 1 to M, and M is not less than 3. The nth electrode layer with smaller n is closer to the sidewall of the trench. When n equals to M, the Mth electrode layer fills in the center of the trench, and the top surface of the Mth electrode is aligned with the top surface of the substrate. A capacitor dielectric layer is disposed between the adjacent electrode layers. A first conductive plug contacts the nth electrode layer with odd-numbered n. A second conductive plug contacts the nth electrode layer with even-numbered n.