公开(公告)号：US3842274A

公开(公告)日：1974-10-15

申请号：US41630073

申请日：1973-11-15

Applicant: US NAVY

Inventor： SCHARNHORST K ,  GREENE R ,  SCHOOLAR R

IPC: H01L21/00 ,  H01L27/148 ,  G01J5/00

CPC classification number: H01L27/14881 ,  H01L21/00

Abstract: A radiation detector which operates in the infrared 1 to 14 micron region of the electromagnetic spectrum. The detector consists of an infrared charge coupled device which depends on capacitive coupling across the interface of silicon of the photoconductive response of a narrow gap semiconductor so as to dispense with carrier injection across that interface.

Abstract translation: 辐射探测器，其工作在电磁光谱的红外1至14微米区域。 该检测器由红外电荷耦合器件组成，该器件取决于跨越硅接口的窄间隙半导体的光电导响应的电容耦合，从而免除跨越该接口的载流子注入。

公开(公告)号：US3716424A

公开(公告)日：1973-02-13

申请号：US3716424D

申请日：1970-04-02

Applicant: US NAVY

Inventor： SCHOOLAR R

IPC: H01L21/00 ,  H01L21/34 ,  H01L21/479 ,  H01L7/00 ,  B01J17/00 ,  G03G5/02

CPC classification number: H01L21/34 ,  H01L21/00 ,  H01L21/479 ,  Y10S148/063 ,  Y10S148/169 ,  Y10S257/912

Abstract: Flat, uniform planar diodes of PbS are prepared by either (1) epitaxially growing an n-type layer onto a p-type layer by depositing one layer epitaxially onto the other in a vacuum of at least 5 X 10 5 Torr wherein the substrate is at a temperature between 200-350* C and the material to be deposited is at a temperature not lower than its sublimation point or (2) epitaxially growing a p-type layer on an n-type layer using the procedure described in (1) with the addition of vapors of a doping agent such as S, Se or Te, in the system. This method may also be applied to the closely related compounds PbxSn1 xSe and PbxSn1 xTe where x varies from 0 to 1 inclusive, hereinafter referred to as the lead-tin salt alloys.

Abstract translation: 通过（1）通过在至少5×10 -5 Torr的真空中将一层外延沉积到另一层上而将n型层外延生长到p型层上来制备PbS的均匀平面二极管，其中， 基材的温度在200-350℃之间，待沉积的材料处于不低于其升华点的温度，或（2）使用上述方法在n型层上外延生长p型层， （1）在系统中加入诸如S，Se或Te的掺杂剂的蒸气。 该方法也可以应用于密切相关的化合物PbxSn1-xSe和PbxSn1-xTe，其中x从0变化到1（以下称为铅锡盐合金）。

公开(公告)号：US3793070A

公开(公告)日：1974-02-19

申请号：US3793070D

申请日：1971-06-01

Applicant: US NAVY

Inventor： SCHOOLAR R

IPC: H01L21/00 ,  H01L31/18 ,  H01L7/36

CPC classification number: H01L21/00 ,  H01L31/18 ,  Y10S148/049 ,  Y10S148/063 ,  Y10S148/064 ,  Y10S148/085 ,  Y10S438/925 ,  Y10S438/936 ,  Y10S438/971

Abstract: A method of varying the carrier concentration of epitaxial films of Pbx Sn1 xS, wherein X varies from 0.8 to 1 inclusive, which are deposited in vacuum from a source of material in a sublimation furnace which is at a temperature above the sublimation temperature of the material comprising varying the sublimation furnace opening size and temperature. The products can be used as infrared detectors.

Abstract translation: 改变Pb x Sn 1-x S的外延膜的载流子浓度的方法，其中X从0.8变化到1，其中真空从升华炉中的材料源沉积，该升华炉的温度高于 包括改变升华炉开口尺寸和温度的材料。 该产品可用作红外探测器。

公开(公告)号：US3770565A

公开(公告)日：1973-11-06

申请号：US3770565D

申请日：1972-01-05

Applicant: US NAVY

Inventor： MATHEWS H ,  CULPEPPER R ,  SCHOOLAR R ,  LEQUIN D

IPC: H01L21/34 ,  H01L21/479 ,  H01L29/227 ,  B01J17/00 ,  B32B27/38 ,  H01L1/00

CPC classification number: H01L21/479 ,  H01L21/34 ,  H01L29/227 ,  Y10S148/063 ,  Y10S148/15 ,  Y10T428/31511

Abstract: Epitaxial films of the formulas PbxSn1 x B and PbSySe1 y where B is S, Te or Se, O

Abstract translation: 其中B为S，Te或Se，O <= 1和O