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    TWO-DIMENSIONAL HETEROSTRUCTURE MATERIALS
    2.
    发明申请
    TWO-DIMENSIONAL HETEROSTRUCTURE MATERIALS 有权
    二维结构材料

    公开(公告)号：US20170025505A1

    公开(公告)日：2017-01-26

    申请号：US15215389

    申请日：2016-07-20

    Applicant: UT-Battelle, LLC

    Inventor： David B. Geohegan ,  Christopher M. Rouleau ,  Kai Wang ,  Kai Xiao ,  Ming-Wei Lin ,  Alexander A. Puretzky ,  Masoud Mahjouri-Samani

    IPC: H01L29/267 ,  G03F1/20 ,  H01L21/027 ,  H01L21/033 ,  H01L21/02

    CPC classification number: G03F1/20 ,  H01L21/02568 ,  H01L21/02664 ,  H01L21/0332 ,  H01L29/0661 ,  H01L29/1606 ,  H01L29/24 ,  H01L29/735 ,  H01L29/778

    Abstract: Methods, articles of manufacture and systems for creating new nanoscale two dimensional materials comprising designed arrays of lateral or vertical heterojunctions may be fabricated by first lithographically masking a 2D material. Exposed, or unmasked, regions of the 2D material may be converted to a different composition of matter to form lateral or vertical heterojunctions according to the patterned mask. PLD and high kinetic energy impingement of atoms may replace or add atoms in the exposed regions, and a plurality of the exposed regions may be converted concurrently. The process may be repeated one or more times on either side of the same 2D material to form any suitable combination of lateral heterojunctions and/or vertical heterojunctions, comprising semiconductors, metals or insulators or any suitable combination thereof. Furthermore, the resulting 2D material may comprise p-n, n-n, p-p, n-p-n and p-n-p junctions, or any suitable combination thereof.

    Abstract translation: 可以通过首先光刻掩蔽2D材料来制造包括设计的横向或垂直异质结阵列的新型纳米级二维材料的制造方法和制造系统。 可以将2D材料的暴露或未掩蔽的区域转化为不同的物质组成，以形成根据图案化掩模的横向或垂直异质结。 PLD和原子的高动能冲击可以取代或添加暴露区域中的原子，并且可以同时转换多个暴露区域。 该过程可以在相同2D材料的任一侧上重复一次或多次以形成横向异质结和/或垂直异质结的任何合适的组合，包括半导体，金属或绝缘体或其任何合适的组合。 此外，所得到的2D材料可以包括p-n，n-n，p-p，n-p-n和p-n-p结，或其任何合适的组合。

    CARBON NANOTUBE TEMPERATURE AND PRESSURE SENSORS
    6.
    发明申请
    CARBON NANOTUBE TEMPERATURE AND PRESSURE SENSORS 有权
    碳纳米管温度和压力传感器

    公开(公告)号：US20140020474A1

    公开(公告)日：2014-01-23

    申请号：US14035080

    申请日：2013-09-24

    Applicant: UT-BATTELLE LLC

    Inventor： Ilia N. Ivanov ,  David B. Geohegan

    IPC: G01K7/00 ,  G01L9/00

    CPC classification number: G01L19/00 ,  B82Y15/00 ,  B82Y30/00 ,  G01K7/00 ,  G01K7/021 ,  G01K7/028 ,  G01K7/18 ,  G01K2211/00 ,  G01L1/20 ,  G01L9/00 ,  G01L9/0001 ,  G01L9/0002 ,  G01L9/0005 ,  Y10S977/742 ,  Y10S977/955 ,  Y10S977/956

    Abstract: The present invention, in one embodiment, provides a method of measuring pressure or temperature using a sensor including a sensor element composed of a plurality of carbon nanotubes. In one example, the resistance of the plurality of carbon nanotubes is measured in response to the application of temperature or pressure. The changes in resistance are then recorded and correlated to temperature or pressure. In one embodiment, the present invention provides for independent measurement of pressure or temperature using the sensors disclosed herein.

    Abstract translation: 在一个实施例中，本发明提供使用包括由多个碳纳米管组成的传感器元件的传感器来测量压力或温度的方法。 在一个实例中，响应于温度或压力的应用来测量多个碳纳米管的电阻。 然后记录电阻的变化并与温度或压力相关。 在一个实施例中，本发明使用本文公开的传感器来提供压力或温度的独立测量。

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