公开(公告)号：US20160208141A1

公开(公告)日：2016-07-21

申请号：US14597737

申请日：2015-01-15

Applicant: UWiZ Technology Co., Ltd.

Inventor： Yun Lung Ho ,  Chun Chieh Lee ,  Song Yuan Chang ,  Ming Hui Lu ,  Ming Che Ho

IPC: C09G1/02

CPC classification number: C09G1/02 ,  C09G1/00 ,  H01L21/3212 ,  H01L21/3213

Abstract: A polishing composition comprising abrasive particles, a compound having hexavalent molybdenum or pentavalent vanadium, an anionic additive, a halogen oxides compound or salts thereof, and a carrier solvent is provided herein. The polishing composition is suitable for chemical mechanical polishing process of SiGe, Si and SiO2 substrates. The compound having hexavalent molybdenum or pentavalent can effectively raise the removal rate for SiGe and Si substrates, and increase the polishing selectivity of SiGe and Si relative to SiO2, simultaneously.

Abstract translation: 本文提供了包含磨粒，具有六价钼或五价钒的化合物，阴离子添加剂，卤素氧化物或其盐以及载体溶剂的抛光组合物。 抛光组合物适用于SiGe，Si和SiO2基板的化学机械抛光工艺。 具有六价钼或五价的化合物可以有效地提高SiGe和Si衬底的去除率，同时提高SiGe和Si相对于SiO2的抛光选择性。

公开(公告)号：US09493678B2

公开(公告)日：2016-11-15

申请号：US14597737

申请日：2015-01-15

Applicant: UWiZ Technology Co., Ltd.

Inventor： Yun Lung Ho ,  Chun Chieh Lee ,  Song Yuan Chang ,  Ming Hui Lu ,  Ming Che Ho

IPC: C09G1/00 ,  C09G1/02 ,  H01L21/321 ,  H01L21/3213

CPC classification number: C09G1/02 ,  C09G1/00 ,  H01L21/3212 ,  H01L21/3213

Abstract: A polishing composition comprising abrasive particles, a compound having hexavalent molybdenum or pentavalent vanadium, an anionic additive, a halogen oxides compound or salts thereof, and a carrier solvent is provided herein. The polishing composition is suitable for chemical mechanical polishing process of SiGe, Si and SiO2 substrates. The compound having hexavalent molybdenum or pentavalent can effectively raise the removal rate for SiGe and Si substrates, and increase the polishing selectivity of SiGe and Si relative to SiO2, simultaneously.

Abstract translation: 本文提供了包含磨粒，具有六价钼或五价钒的化合物，阴离子添加剂，卤素氧化物或其盐以及载体溶剂的抛光组合物。 抛光组合物适用于SiGe，Si和SiO2基板的化学机械抛光工艺。 具有六价钼或五价的化合物可以有效地提高SiGe和Si衬底的去除率，同时提高SiGe和Si相对于SiO2的抛光选择性。