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公开(公告)号：US20160208141A1
公开(公告)日：2016-07-21
申请号：US14597737
申请日：2015-01-15
发明人： Yun Lung Ho , Chun Chieh Lee , Song Yuan Chang , Ming Hui Lu , Ming Che Ho
IPC分类号： C09G1/02
CPC分类号： C09G1/02 , C09G1/00 , H01L21/3212 , H01L21/3213
摘要： A polishing composition comprising abrasive particles, a compound having hexavalent molybdenum or pentavalent vanadium, an anionic additive, a halogen oxides compound or salts thereof, and a carrier solvent is provided herein. The polishing composition is suitable for chemical mechanical polishing process of SiGe, Si and SiO2 substrates. The compound having hexavalent molybdenum or pentavalent can effectively raise the removal rate for SiGe and Si substrates, and increase the polishing selectivity of SiGe and Si relative to SiO2, simultaneously.
摘要翻译： 本文提供了包含磨粒，具有六价钼或五价钒的化合物，阴离子添加剂，卤素氧化物或其盐以及载体溶剂的抛光组合物。 抛光组合物适用于SiGe，Si和SiO2基板的化学机械抛光工艺。 具有六价钼或五价的化合物可以有效地提高SiGe和Si衬底的去除率，同时提高SiGe和Si相对于SiO2的抛光选择性。
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公开(公告)号：US09493678B2
公开(公告)日：2016-11-15
申请号：US14597737
申请日：2015-01-15
发明人： Yun Lung Ho , Chun Chieh Lee , Song Yuan Chang , Ming Hui Lu , Ming Che Ho
IPC分类号： C09G1/00 , C09G1/02 , H01L21/321 , H01L21/3213
CPC分类号： C09G1/02 , C09G1/00 , H01L21/3212 , H01L21/3213
摘要： A polishing composition comprising abrasive particles, a compound having hexavalent molybdenum or pentavalent vanadium, an anionic additive, a halogen oxides compound or salts thereof, and a carrier solvent is provided herein. The polishing composition is suitable for chemical mechanical polishing process of SiGe, Si and SiO2 substrates. The compound having hexavalent molybdenum or pentavalent can effectively raise the removal rate for SiGe and Si substrates, and increase the polishing selectivity of SiGe and Si relative to SiO2, simultaneously.
摘要翻译： 本文提供了包含磨粒，具有六价钼或五价钒的化合物，阴离子添加剂，卤素氧化物或其盐以及载体溶剂的抛光组合物。 抛光组合物适用于SiGe，Si和SiO2基板的化学机械抛光工艺。 具有六价钼或五价的化合物可以有效地提高SiGe和Si衬底的去除率，同时提高SiGe和Si相对于SiO2的抛光选择性。
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公开(公告)号：US09718991B2
公开(公告)日：2017-08-01
申请号：US14723488
申请日：2015-05-28
发明人： Yi Han Yang , Wen Cheng Liu , Ming Che Ho , Ming Hui Lu , Song Yuan Chang
CPC分类号： C09G1/02 , C09K3/1463 , C23F3/04
摘要： A chemical mechanical polishing slurry for polishing a stainless steel substrate is provided, which comprises a content 10˜50 wt % of abrasive particles, a content 0.001˜2.0 wt % of a coolant, a content 0.001˜1.0 wt % of an oxidant, a content 10˜5000 ppm of a lubricity improver, and a content 10˜5000 ppm of a foam inhibitor. A particle size of the abrasive particles is in a range of 20˜500 nm. The alkaline polishing slurry according to the present invention is capable of increasing the polishing performance, surface quality, and surface passivation effect after the chemical-mechanical polishing process.
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