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公开(公告)号:US20190229223A1
公开(公告)日:2019-07-25
申请号:US16372636
申请日:2019-04-02
IPC分类号: H01L31/0352 , H01L31/101 , H01L31/0328 , G02B5/00 , G02B5/08 , H01L27/30 , G01N21/552 , H01L51/42 , H01L31/09 , H01L31/0232 , G02B5/12 , H01L31/054
CPC分类号: H01L31/035209 , B82Y20/00 , B82Y30/00 , G01N21/553 , G01N21/554 , G01N2021/7773 , G02B5/008 , G02B5/0866 , G02B5/12 , H01L27/307 , H01L31/0232 , H01L31/02327 , H01L31/0328 , H01L31/0543 , H01L31/09 , H01L31/101 , H01L51/42
摘要: A method is for making an optical detector device. The method may include forming a reflector layer carried by a substrate, forming a first dielectric layer over the reflector layer, and forming a graphene layer over the first dielectric layer and having a perforated pattern therein.
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公开(公告)号:US11217738B2
公开(公告)日:2022-01-04
申请号:US16555449
申请日:2019-08-29
摘要: Various methods and devices for ultrasensitive infrared photodetection, infrared imaging, and other optoelectronic applications using the plasmon assisted thermoelectric effect in graphene are described. Infrared detection by the photo-thermoelectric uses the generation of a temperature gradient (ΔT) for the efficient collection of the generated hot-carriers. An asymmetric plasmon-induced hot-carrier Seebeck photodetection scheme at room temperature exhibits a remarkable responsivity along with an ultrafast response in the technologically relevant 8-12 μm band. This is achieved by engineering the asymmetric electronic environment of the generated hot carriers on chemical vapor deposition (CVD) grown large area nanopatterned monolayer graphene, which leads to a record ΔT across the device terminals thereby enhancing the photo-thermoelectric voltage beyond the theoretical limit for graphene. The results provide a strategy for uncooled, tunable, multispectral infrared detection.
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公开(公告)号:US10312389B2
公开(公告)日:2019-06-04
申请号:US15782948
申请日:2017-10-13
IPC分类号: H01L31/0352 , G02B5/12 , H01L31/101 , H01L31/0232 , H01L31/09 , H01L51/42 , G01N21/552 , H01L31/0328 , G02B5/00 , G02B5/08 , H01L27/30 , G01N21/77 , B82Y20/00 , B82Y30/00
摘要: An optical detector device may include a substrate, a reflector layer carried by the substrate, and a first dielectric layer over the reflector layer. The optical detector device may include a graphene layer over the first dielectric layer and having a perforated pattern.
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公开(公告)号:US10784387B2
公开(公告)日:2020-09-22
申请号:US16372636
申请日:2019-04-02
IPC分类号: H01L31/0352 , G02B5/12 , H01L31/101 , H01L31/0232 , H01L31/09 , H01L51/42 , G01N21/552 , H01L31/0328 , G02B5/00 , G02B5/08 , H01L27/30 , H01L31/054 , G01N21/77 , B82Y20/00 , B82Y30/00
摘要: A method is for making an optical detector device. The method may include forming a reflector layer carried by a substrate, forming a first dielectric layer over the reflector layer, and forming a graphene layer over the first dielectric layer and having a perforated pattern therein.
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