公开(公告)号：US11222890B2

公开(公告)日：2022-01-11

申请号：US16839089

申请日：2020-04-03

Applicant: University of Electronic Science and Technology of China

Inventor： Ming Qiao ,  Linrong He ,  Yi Li ,  Chunlan Lai ,  Bo Zhang

IPC: H01L27/06 ,  H01L27/092 ,  H01L29/66 ,  H01L21/762 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/739 ,  H01L29/78

Abstract: An integrated power semiconductor device, includes devices integrated on a single chip. The devices include a vertical high voltage device, a first high voltage pLDMOS device, a high voltage nLDMOS device, a second high voltage pLDMOS device, a low voltage NMOS device, a low voltage PMOS device, a low voltage NPN device, and a low voltage diode device. A dielectric isolation is applied to the first high voltage pLDMOS device, the high voltage nLDMOS device, the second high voltage pLDMOS device, the low voltage NMOS device, the low voltage PMOS device, the low voltage NPN device, and the low voltage diode device. A multi-channel design is applied to the first high voltage pLDMOS device, and the high voltage nLDMOS device. A single channel design is applied to the second high voltage pLDMOS device.

公开(公告)号：US09726651B2

公开(公告)日：2017-08-08

申请号：US14593304

申请日：2015-01-09

Applicant: University of Electronic Science and Technology of China

Inventor： Xiaosong Du ,  Luhua Cheng ,  Penglin Wu ,  Huan Yuan ,  Yadong Jiang ,  Ze Wu ,  Yi Li ,  Dong Qiu

IPC: G01N30/08 ,  H01L27/02 ,  G01N30/93 ,  B01L3/00 ,  G01N1/40

CPC classification number: G01N30/93 ,  B01L3/5027 ,  B01L3/502707 ,  B01L2300/069 ,  B01L2300/0816 ,  B01L2300/0864 ,  B01L2300/0883 ,  G01N1/4005 ,  G01N1/405 ,  G01N30/08 ,  G01N2030/085

Abstract: A double-sided diaphragm micro gas-preconcentrator has a micro-gas chamber which is formed by stacking an upper silicon substrate with a lower silicon substrate with a back-on-face configuration. One or more suspended membranes are provided on every silicon substrate. The silicon where the suspended membrane is provided is completely removed for forming a cavity. A thin-film heater is deposited on every suspended membrane. A sorptive film is coated on an inner wall of every suspended membrane. Thus, the upper and lower sides of the preconcentrator in the present invention are suspended membranes, which improve the area of the sorptive film on the diaphragm. As a result, the preconcentrating factor is improved while keeping the small heat capacity, fast heating rate, and low power consumption features of the planar diaphragm preconcentrator.

公开(公告)号：US20150160172A1

公开(公告)日：2015-06-11

申请号：US14593304

申请日：2015-01-09

Applicant: University of Electronic Science and Technology of China

Inventor： Xiaosong Du ,  Luhua Cheng ,  Penglin Wu ,  Huan Yuan ,  Yadong Jiang ,  Ze Wu ,  Yi Li ,  Dong Qiu

IPC: G01N30/93

CPC classification number: G01N30/93 ,  B01L3/5027 ,  B01L3/502707 ,  B01L2300/069 ,  B01L2300/0816 ,  B01L2300/0864 ,  B01L2300/0883 ,  G01N1/4005 ,  G01N1/405 ,  G01N30/08 ,  G01N2030/085

Abstract: A double-sided diaphragm micro gas-preconcentrator has a micro-gas chamber which is formed by stacking an upper silicon substrate with a lower silicon substrate with a back-on-face configuration. One or more suspended membranes are provided on every silicon substrate. The silicon where the suspended membrane is provided is completely removed for forming a cavity. A thin-film heater is deposited on every suspended membrane. A sorptive film is coated on an inner wall of every suspended membrane. Thus, the upper and lower sides of the preconcentrator in the present invention are suspended membranes, which improve the area of the sorptive film on the diaphragm. As a result, the preconcentrating factor is improved while keeping the small heat capacity, fast heating rate, and low power consumption features of the planar diaphragm preconcentrator.

Abstract translation: 双面隔膜微气体预浓缩器具有微气体室，该微气体室通过将具有背面构造的下硅基板与上硅基板层叠而形成。 在每个硅衬底上提供一个或多个悬浮膜。 提供悬浮膜的硅完全除去以形成空腔。 薄膜加热器沉积在每个悬浮膜上。 吸附膜涂覆在每个悬浮膜的内壁上。 因此，本发明的预浓缩器的上侧和下侧是悬浮膜，其改善了隔膜上吸附膜的面积。 结果，在保持平面膜片预浓缩器的小热容量，快速加热速率和低功耗特征的同时，提高了预浓缩因子。