公开(公告)号：US20080220612A1

公开(公告)日：2008-09-11

申请号：US11682347

申请日：2007-03-06

申请人： Ute Drechsler ,  Urs T. Duerig ,  Jane Elizabeth Frommer ,  Bernd W. Gotsmann ,  James Lupton Hedrick ,  Armin W. Knoll ,  Tobias Kraus ,  Robert Dennis Miller

发明人： Ute Drechsler ,  Urs T. Duerig ,  Jane Elizabeth Frommer ,  Bernd W. Gotsmann ,  James Lupton Hedrick ,  Armin W. Knoll ,  Tobias Kraus ,  Robert Dennis Miller

IPC分类号： H01L21/311

CPC分类号： G11B9/149 ,  B82Y10/00 ,  Y10S438/928

摘要： A method of protecting a polymeric layer from contamination by a photoresist layer. The method includes: (a) forming a polymeric layer over a substrate; (b) forming a non-photoactive protection layer over the polymeric layer; (c) forming a photoresist layer over the protection layer; (d) exposing the photoresist layer to actinic radiation and developing the photoresist layer to form a patterned photoresist layer, thereby exposing regions of the protection layer; (e) etching through the protection layer and the polymeric layer where the protection layer is not protected by the patterned photoresist layer; (f) removing the patterned photoresist layer in a first removal process; and (g) removing the protection layer in a second removal process different from the first removal process.

摘要翻译： 保护聚合物层免受光致抗蚀剂层污染的方法。 该方法包括：（a）在基底上形成聚合物层; （b）在聚合物层上形成非光敏保护层; （c）在所述保护层上形成光致抗蚀剂层; （d）将光致抗蚀剂层暴露于光化辐射并显影光致抗蚀剂层以形成图案化的光致抗蚀剂层，从而暴露保护层的区域; （e）蚀刻通过保护层和聚合物层，其中保护层不被图案化的光致抗蚀剂层保护; （f）在第一去除过程中去除图案化的光致抗蚀剂层; 和（g）在与第一去除过程不同的第二去除过程中去除保护层。

公开(公告)号：US07749915B2

公开(公告)日：2010-07-06

申请号：US12058924

申请日：2008-03-31

申请人： Ute Drechsler ,  Urs T. Duerig ,  Jane Elizabeth Frommer ,  Bernd W. Gotsmann ,  James Lupton Hedrick ,  Armin W. Knoll ,  Tobias Kraus ,  Robert Dennis Miller

发明人： Ute Drechsler ,  Urs T. Duerig ,  Jane Elizabeth Frommer ,  Bernd W. Gotsmann ,  James Lupton Hedrick ,  Armin W. Knoll ,  Tobias Kraus ,  Robert Dennis Miller

IPC分类号： H01L21/308 ,  H01L21/311 ,  H01L21/312

CPC分类号： G11B9/149 ,  B82Y10/00 ,  Y10S438/928

摘要： A method of protecting a polymeric layer from contamination by a photoresist layer. The method includes: (a) forming a polymeric layer over a substrate; (b) forming a non-photoactive protection layer over the polymeric layer; (c) forming a photoresist layer over the protection layer; (d) exposing the photoresist layer to actinic radiation and developing the photoresist layer to form a patterned photoresist layer, thereby exposing regions of the protection layer; (e) etching through the protection layer and the polymeric layer where the protection layer is not protected by the patterned photoresist layer; (f) removing the patterned photoresist layer in a first removal process; and (g) removing the protection layer in a second removal process different from the first removal process.

摘要翻译： 保护聚合物层免受光致抗蚀剂层污染的方法。 该方法包括：（a）在基底上形成聚合物层; （b）在聚合物层上形成非光敏保护层; （c）在所述保护层上形成光致抗蚀剂层; （d）将光致抗蚀剂层暴露于光化辐射并显影光致抗蚀剂层以形成图案化的光致抗蚀剂层，从而暴露保护层的区域; （e）蚀刻通过保护层和聚合物层，其中保护层不被图案化的光致抗蚀剂层保护; （f）在第一去除过程中去除图案化的光致抗蚀剂层; 和（g）在与第一去除过程不同的第二去除过程中去除保护层。

公开(公告)号：US20080220613A1

公开(公告)日：2008-09-11

申请号：US12058924

申请日：2008-03-31

申请人： Ute Drechsler ,  Urs T. Duerig ,  Jane Elizabeth Frommer ,  Bernd W. Gotsmann ,  James Lupton Hedrick ,  Armin W. Knoll ,  Tobias Kraus ,  Robert Dennis Miller

发明人： Ute Drechsler ,  Urs T. Duerig ,  Jane Elizabeth Frommer ,  Bernd W. Gotsmann ,  James Lupton Hedrick ,  Armin W. Knoll ,  Tobias Kraus ,  Robert Dennis Miller

IPC分类号： H01L21/311

CPC分类号： G11B9/149 ,  B82Y10/00 ,  Y10S438/928

摘要： A method of protecting a polymeric layer from contamination by a photoresist layer. The method includes: (a) forming a polymeric layer over a substrate; (b) forming a non-photoactive protection layer over the polymeric layer; (c) forming a photoresist layer over the protection layer; (d) exposing the photoresist layer to actinic radiation and developing the photoresist layer to form a patterned photoresist layer, thereby exposing regions of the protection layer; (e) etching through the protection layer and the polymeric layer where the protection layer is not protected by the patterned photoresist layer; (f) removing the patterned photoresist layer in a first removal process; and (g) removing the protection layer in a second removal process different from the first removal process.

公开(公告)号：US09255182B2

公开(公告)日：2016-02-09

申请号：US12056446

申请日：2008-03-27

申请人： Urs T. Duerig ,  Jane Elizabeth Frommer ,  Bernd Walter Gotsmann ,  Erik Christopher Hagberg ,  James Lupton Hedrick ,  Armin W. Knoll ,  Teddie Peregrino Magbitang ,  Robert Dennis Miller ,  Russell Clayton Pratt ,  Charles Gordon Wade

发明人： Urs T. Duerig ,  Jane Elizabeth Frommer ,  Bernd Walter Gotsmann ,  Erik Christopher Hagberg ,  James Lupton Hedrick ,  Armin W. Knoll ,  Teddie Peregrino Magbitang ,  Robert Dennis Miller ,  Russell Clayton Pratt ,  Charles Gordon Wade

IPC分类号： C08G73/10

CPC分类号： C08G73/1085 ,  C08G73/101 ,  C08G73/1064

摘要： A composition of matter for a recording medium in atomic force data storage devices. The composition includes polyimide oligomers having covalently bonded monomers forming a backbone, the oligomer thermally stable to at least 400° C.; one or more covalent bonding cross-linking moieties incorporated into the polyimide oligomer; and one or more hydrogen bonding cross-linking moieties incorporated into the polyimide oligomer. The covalent and hydrogen bonding cross-linking of the polyimide oligomers may be tuned to match thermal and force parameters required in read-write-erase cycles.

摘要翻译： 用于原子力数据存储装置中的记录介质的物质组成。 该组合物包括具有共价键合的单体形成主链的聚酰亚胺低聚物，该低聚物在至少400℃下是热稳定的。 掺入聚酰亚胺低聚物中的一种或多种共价键合交联部分; 和一个或多个结合到聚酰亚胺低聚物中的氢键交联部分。 可以调节聚酰亚胺低聚物的共价键和氢键交联以匹配读写擦除周期中所需的热和强度参数。

公开(公告)号：US08792318B2

公开(公告)日：2014-07-29

申请号：US13345889

申请日：2012-01-09

申请人： Urs T. Duerig ,  Jane Elizabeth Frommer ,  Bernd Walter Gotsmann ,  Erik Christopher Hagberg ,  James Lupton Hedrick ,  Armin W. Knoll ,  Victor Yee-Way Lee ,  Teddie Peregrino Magbitang ,  Robert Dennis Miller ,  Russell Clayton Pratt ,  Charles Gordon Wade ,  Johannes Windeln

发明人： Urs T. Duerig ,  Jane Elizabeth Frommer ,  Bernd Walter Gotsmann ,  Erik Christopher Hagberg ,  James Lupton Hedrick ,  Armin W. Knoll ,  Victor Yee-Way Lee ,  Teddie Peregrino Magbitang ,  Robert Dennis Miller ,  Russell Clayton Pratt ,  Charles Gordon Wade ,  Johannes Windeln

IPC分类号： G11B3/00 ,  B29C45/76 ,  G11B9/00 ,  G11B9/14 ,  B82Y10/00

CPC分类号： G11B9/149 ,  B82Y10/00 ,  C08G73/101 ,  C08G73/1046 ,  C08G73/105 ,  C08G73/1053 ,  C08G73/1064 ,  G11B9/1409 ,  G11B9/1454 ,  G11B11/007 ,  G11B2005/0021 ,  Y10T428/265 ,  Y10T428/31721

摘要： An approach is presented for designing a polymeric layer for nanometer scale thermo-mechanical storage devices. Cross-linked polyimide oligomers are used as the recording layers in atomic force data storage device, giving significantly improved performance when compared to previously reported cross-linked and linear polymers. The cross-linking of the polyimide oligomers may be tuned to match thermal and force parameters required in read-write-erase cycles. Additionally, the cross-linked polyimide oligomers are suitable for use in nano-scale imaging.

摘要翻译： 提出了一种用于设计用于纳米级热机械存储装置的聚合物层的方法。 交联聚酰亚胺低聚物用作原子力数据存储装置中的记录层，与先前报道的交联和线性聚合物相比，显着提高了性能。 可以调整聚酰亚胺低聚物的交联以匹配读写擦除周期中所需的热和强度参数。 另外，交联聚酰亚胺低聚物适用于纳米级成像。

公开(公告)号：US08488436B2

公开(公告)日：2013-07-16

申请号：US13365408

申请日：2012-02-03

申请人： Richard Anthony DiPietro ,  Urs T. Duerig ,  Jane Elizabeth Frommer ,  Bernd Walter Gotsmann ,  Erik Christopher Hagberg ,  James Lupton Hedrick ,  Armin W. Knoll ,  Teddie Peregrino Magbitang ,  Robert Dennis Miller ,  Russell Clayton Pratt ,  Charles-Gordon Wade

发明人： Richard Anthony DiPietro ,  Urs T. Duerig ,  Jane Elizabeth Frommer ,  Bernd Walter Gotsmann ,  Erik Christopher Hagberg ,  James Lupton Hedrick ,  Armin W. Knoll ,  Teddie Peregrino Magbitang ,  Robert Dennis Miller ,  Russell Clayton Pratt ,  Charles-Gordon Wade

IPC分类号： G11B3/00 ,  B05D3/00 ,  B05D5/00

CPC分类号： G11B9/149 ,  B82Y10/00 ,  C08G65/4012 ,  C08G65/46 ,  G11B9/1472 ,  G11B11/007

摘要： A composition of matter for the recording medium of nanometer scale thermo-mechanical information storage devices and a nanometer scale thermo-mechanical information storage device. The composition includes: one or more polyaryletherketone copolymers, each of the one or more polyaryletherketone copolymers comprising (a) a first monomer including an aryl ether ketone and (b) a second monomer including an aryl ether ketone and a first phenylethynyl moiety, each of the one or more polyaryletherketone copolymers having two terminal ends, each terminal end having a phenylethynyl moiety the same as or different from the first phenylethynyl moiety. The one or more polyaryletherketone copolymers are thermally cured and the resulting cross-linked polyaryletherketone resin used as the recording layer in an atomic force data storage device.

公开(公告)号：US08337954B2

公开(公告)日：2012-12-25

申请号：US12058937

申请日：2008-03-31

申请人： Richard Anthony DiPietro ,  Urs T. Duerig ,  Jane Elizabeth Frommer ,  Bernd Walter Gotsmann ,  James Lupton Hedrick ,  Armin W. Knoll ,  Teddie Peregrino Magbitang ,  Robert Dennis Miller ,  Russell Clayton Pratt

发明人： Richard Anthony DiPietro ,  Urs T. Duerig ,  Jane Elizabeth Frommer ,  Bernd Walter Gotsmann ,  James Lupton Hedrick ,  Armin W. Knoll ,  Teddie Peregrino Magbitang ,  Robert Dennis Miller ,  Russell Clayton Pratt

IPC分类号： B05D3/02

CPC分类号： G11B9/149 ,  B82Y10/00 ,  G11B9/1472 ,  G11B11/007

摘要： A composition and a method. The method including: heating one or more poly(aryl ether ketone) copolymers to form a poly(aryl ether ketone) resin, said poly(aryl ether ketone) resin covalently cross-linked by cyclo-addition reactions of said phenylethynyl moieties; and wherein each of said one or more poly(aryl ether ketone) copolymers comprises (a) a first monomer including an aryl ether ketone and (b) a second monomer including an aryl ether ketone and a hydrogen bonding cross-linking moiety, said moiety capable of forming two or more hydrogen bonds at room temperature, each of said one or more poly(aryl ether ketone) copolymers having two terminal ends, each terminal end having a phenylethynyl moiety.

摘要翻译： 组合物和方法。 该方法包括：加热一种或多种聚（芳基醚酮）共聚物以形成聚（芳基醚酮）树脂，所述聚（芳基醚酮）树脂通过所述苯基乙炔基部分的环加成反应共价交联; 并且其中所述一种或多种聚（芳醚酮）共聚物中的每一种包含（a）包含芳基醚酮的第一单体和（b）包含芳基醚酮和氢键交联部分的第二单体，所述部分 能够在室温下形成两个或多个氢键，所述一种或多种聚（芳基醚酮）共聚物中的每一个具有两个末端，每个末端具有苯基乙炔基部分。

公开(公告)号：US20080219135A1

公开(公告)日：2008-09-11

申请号：US12056412

申请日：2008-03-27

申请人： Urs T. Duerig ,  Jane Elizabeth Frommer ,  Bernd Walter Gotsmann ,  Erik Christopher Hagberg ,  James Lupton Hedrick ,  Armin W. Knoll ,  Victor Yee-Way Lee ,  Teddie Peregrino Magbitang ,  Robert Dennis Miller ,  Russell Clayton Pratt ,  Charles Gordon Wade ,  Johannes Windeln

发明人： Urs T. Duerig ,  Jane Elizabeth Frommer ,  Bernd Walter Gotsmann ,  Erik Christopher Hagberg ,  James Lupton Hedrick ,  Armin W. Knoll ,  Victor Yee-Way Lee ,  Teddie Peregrino Magbitang ,  Robert Dennis Miller ,  Russell Clayton Pratt ,  Charles Gordon Wade ,  Johannes Windeln

IPC分类号： G11B3/00 ,  G11B9/00

CPC分类号： G11B9/149 ,  B82Y10/00 ,  C08G73/101 ,  C08G73/1046 ,  C08G73/105 ,  C08G73/1053 ,  C08G73/1064 ,  G11B9/1409 ,  G11B9/1454 ,  G11B11/007 ,  G11B2005/0021 ,  Y10T428/265 ,  Y10T428/31721

摘要： An approach is presented for designing a polymeric layer for nanometer scale thermo-mechanical storage devices. Cross-linked polyimide oligomers are used as the recording layers in atomic force data storage device, giving significantly improved performance when compared to previously reported cross-linked and linear polymers. The cross-linking of the polyimide oligomers may be tuned to match thermal and force parameters required in read-write-erase cycles. Additionally, the cross-linked polyimide oligomers are suitable for use in nano-scale imaging.

摘要翻译： 提出了一种用于设计用于纳米级热机械存储装置的聚合物层的方法。 交联聚酰亚胺低聚物用作原子力数据存储装置中的记录层，与先前报道的交联和线性聚合物相比，显着提高了性能。 可以调整聚酰亚胺低聚物的交联以匹配读写擦除周期中所需的热和强度参数。 另外，交联聚酰亚胺低聚物适用于纳米级成像。

公开(公告)号：US20080186612A1

公开(公告)日：2008-08-07

申请号：US12058937

申请日：2008-03-31

申请人： Richard Anthony DiPietro ,  Urs T. Duerig ,  Jane Elizabeth Frommer ,  Bernd Walter Gotsmann ,  James Lupton Hedrick ,  Armin W. Knoll ,  Teddie Peregrino Magbitang ,  Robert Dennis Miller ,  Russell Clayton Pratt

发明人： Richard Anthony DiPietro ,  Urs T. Duerig ,  Jane Elizabeth Frommer ,  Bernd Walter Gotsmann ,  James Lupton Hedrick ,  Armin W. Knoll ,  Teddie Peregrino Magbitang ,  Robert Dennis Miller ,  Russell Clayton Pratt

IPC分类号： G11B5/02 ,  C08G6/00 ,  C08L61/02

CPC分类号： G11B9/149 ,  B82Y10/00 ,  G11B9/1472 ,  G11B11/007

摘要： A composition of matter for a recording medium in atomic force data storage devices. The composition includes one or more poly(aryl ether ketone) copolymers, each of the one or more poly(aryl ether ketone) copolymers including (a) a first monomer including an aryl ether ketone and (b) a second monomer including an aryl ether ketone and a hydrogen bonding cross-linking moiety, the moiety capable of forming two or more hydrogen bonds at room temperature, each of the one or more poly(aryl ether ketone) copolymers having two terminal ends, each terminal end having a phenylethynyl moiety. The covalent and hydrogen bonding cross-linking of the poly(aryl ether ketone) oligomers may be tuned to match thermal and force parameters required in read-write-erase cycles.

摘要翻译： 用于原子力数据存储装置中的记录介质的物质组成。 所述组合物包括一种或多种聚（芳基醚酮）共聚物，所述一种或多种聚（芳基醚酮）共聚物中的每一种包括（a）包含芳基醚酮的第一单体和（b）包含芳基醚的第二单体 酮和氢键交联部分，该部分能够在室温下形成两个或更多个氢键，所述一种或多种聚（芳基醚酮）共聚物中的每一个具有两个末端，每个末端具有苯乙炔基部分。 可以调节聚（芳基醚酮）低聚物的共价键和氢键交联，以匹配读写擦除周期中所需的热和强度参数。

公开(公告)号：US20070195682A1

公开(公告)日：2007-08-23

申请号：US11626431

申请日：2007-01-24

申请人： Urs T. Duerig ,  Jane Elizabeth Frommer ,  Bernd Walter Gotsmann ,  Erik Christopher Hagberg ,  James Lupton Hedrick ,  Armin W. Knoll ,  Victor Yee-Way Lee ,  Teddie Peregrino Magbitang ,  Robert Dennis Miller ,  Russell Clayton Pratt ,  Charles Gordon Wade ,  Johannes Windeln

发明人： Urs T. Duerig ,  Jane Elizabeth Frommer ,  Bernd Walter Gotsmann ,  Erik Christopher Hagberg ,  James Lupton Hedrick ,  Armin W. Knoll ,  Victor Yee-Way Lee ,  Teddie Peregrino Magbitang ,  Robert Dennis Miller ,  Russell Clayton Pratt ,  Charles Gordon Wade ,  Johannes Windeln

IPC分类号： G11B9/00

CPC分类号： G11B9/149 ,  B82Y10/00 ,  C08G73/101 ,  C08G73/1046 ,  C08G73/105 ,  C08G73/1053 ,  C08G73/1064 ,  G11B9/1409 ,  G11B9/1454 ,  G11B11/007 ,  G11B2005/0021 ,  Y10T428/265 ,  Y10T428/31721

摘要： An approach is presented for designing a polymeric layer for nanometer scale thermo-mechanical storage devices. Cross-linked polyimide oligomers are used as the recording layers in atomic force data storage device, giving significantly improved performance when compared to previously reported cross-linked and linear polymers. The cross-linking of the polyimide oligomers may be tuned to match thermal and force parameters required in read-write-erase cycles. Additionally, the cross-linked polyimide oligomers are suitable for use in nano-scale imaging.

摘要翻译： 提出了一种用于设计用于纳米级热机械存储装置的聚合物层的方法。 交联聚酰亚胺低聚物用作原子力数据存储装置中的记录层，与先前报道的交联和线性聚合物相比，显着提高了性能。 可以调整聚酰亚胺低聚物的交联以匹配读写擦除周期中所需的热和强度参数。 另外，交联聚酰亚胺低聚物适用于纳米级成像。