摘要:
The present invention provides plating solutions, particularly metal plating solutions, designed to provide uniform coatings on substrates and to provide substantially defect free filling of small features, e.g., micron scale features and smaller, formed on substrates with none or low supporting electrolyte, i.e., which include no acid, low acid, no base, or no conducting salts, and/or high metal ion, e.g., copper, concentration. Additionally, the plating solutions may contain small amounts of additives which enhance the plated film quality and performance by serving as brighteners, levelers, surfactants, grain refiners, stress reducers, etc.
摘要:
The present invention provides plating solutions, particularly metal plating solutions, designed to provide uniform coatings on substrates and to provide substantially defect free filling of small features, e.g., micron scale features and smaller, formed on substrates with none or low supporting electrolyte, ie., which include no acid, low acid, no base, or no conducting salts, and/or high metal ion, e.g., copper, concentration. Additionally, the plating solutions may contain small amounts of additives which enhance the plated film quality and performance by serving as brighteners, levelers, surfactants, grain refiners, stress reducers, etc.
摘要:
The present invention provides plating solutions, particularly metal plating solutions, designed to provide uniform coatings on substrates and to provide substantially defect free filling of small features, e.g., micron scale features and smaller, formed on substrates with none or low supporting electrolyte, i.e., which include no acid, low acid, no base, or no conducting salts, and/or high metal ion, e.g., copper, concentration. Additionally, the plating solutions may contain small amounts of additives which enhance the plated film quality and performance by serving as brighteners, levelers, surfactants, grain refiners, stress reducers, etc.
摘要:
The present invention provides plating solutions, particularly copper plating solutions, designed to provide uniform coatings on substrates and to provide substantially defect free filling of small features formed on substrates with none or low supporting electrolyte, i.e., which include no acid, low acid, no base, or no conducting salts, and/or high metal ion, e.g., copper, concentration. Defect free filling of features is enhanced by a plating solution containing blends of polyethers (“carrier”) and organic divalent sulfur compounds (“accelerator”), wherein the concentration of the carrier ranges from about 0.1 ppm to about 2500 ppm of the plating solution, and the concentration of the accelerator ranges from about 0.05 ppm to about 1000 ppm of the plating solution. The plating solution is further improved by adding an organic nitrogen compound at a concentration from about 0.01 ppm to about 1000 ppm to improve the filling of vias on a resistive substrate. The organic nitrogen is preferably a substituted thiadiazole, which is used at concentrations from 0.1 ppm to about 50 ppm of the plating solution, or a quartenary nitrogen compound, which is used at concentrations from about 0.01 ppm to about 500 ppm.
摘要:
The present invention provides plating solutions, particularly copper plating solutions, designed to provide uniform coatings on substrates and to provide substantially defect free filling of small features formed on substrates with none or low supporting electrolyte, i.e., which include no acid, low acid, no base, or no conducting salts, and/or high metal ion, e.g., copper, concentration. Defect free filling of features is enhanced by a plating solution containing blends of polyethers (“carrier”) and organic divalent sulfur compounds (“accelerator”), wherein the concentration of the carrier ranges from about 0.1 ppm to about 2500 ppm of the plating solution, and the concentration of the accelerator ranges from about 0.05 ppm to about 1000 ppm of the plating solution. The plating solution is further improved by adding an organic nitrogen compound at a concentration from about 0.01 ppm to about 1000 ppm to improve the filling of vias on a resistive substrate. The organic nitrogen is preferably a substituted thiadiazole, which is used at concentrations from 0.1 ppm to about 50 ppm of the plating solution, or a quartenary nitrogen compound, which is used at concentrations from about 0.01 ppm to about 500 ppm.
摘要:
The present invention provides plating solutions, particularly metal plating solutions, designed to provide uniform coatings on substrates and to provide substantially defect free filling of small features formed on substrates with none or low supporting electrolyte, i.e., which include no acid, low acid, no base, or no conducting salts, and/or high metal ion, e.g., copper, concentration. Defect free filling of features is enhanced by a plating solution containing blends of polyalkylene glycols (“carrier”) and organic divalent sulfur compounds (“accelerator”), wherein the concentration of the carrier ranges from about 10 ppm to about 2000 ppm of the plating solution, and the concentration of the accelerator ranges from about 0.1 ppm to about 1000 ppm of the plating solution. The plating solution may be further improved by adding 2-amino-5-methyl-1,3,4-thiadiazole which is used at concentrations from 0 ppm to about 20 ppm of the plating solution.
摘要:
The invention provides an apparatus and a method for achieving reliable, consistent metal electroplating or electrochemical deposition onto semiconductor substrates. More particularly, the invention provides uniform and void-free deposition of metal onto metal seeded semiconductor substrates having sub-micron, high aspect ratio features. The invention provides an electrochemical deposition cell comprising a substrate holder, a cathode electrically contacting a substrate plating surface, an electrolyte container having an electrolyte inlet, an electrolyte outlet and an opening adapted to receive a substrate plating surface and an anode electrically connect to an electrolyte. Preferably, a vibrator is attached to the substrate holder to vibrate the substrate in at least one direction, and an auxiliary electrode is disposed adjacent the electrolyte outlet to provide uniform deposition across the substrate surface. Preferably, a periodic reverse current is applied during the plating period to provide a void-free metal layer within high aspect ratio features on the substrate.
摘要:
The invention relates to the analysis of the performance and properties of electrochemical processes, and specifically, to electrolytic solutions and electrode processes. The invention discloses a device and a method for obtaining qualitative and quantitative information for the kinetics of the electrode reactions, the transport processes, the thermodynamic properties of the electrochemical processes taking place in the cell. When a deposition reaction takes place, the device provides also valuable information about the relationship between the current density and deposit properties including but not limited to the deposit color, luster, and other aspects of its appearance. The device disclosed herein typically is comprised of a multiplicity of cathodic or anodic regions where one or more electrochemical reactions take place simultaneously, but at a different rate. From the precisely measured segmental currents one can obtain among other process properties: (1) An accurate relationship between the deposit appearance and the current density. This relationship can be used for process diagnostics, troubleshooting, control of concentrations, pH, and additives and contaminants and for optimizing the operating conditions, including the voltage, current, and circulation rate. (2) Quantitative determination of important process parameters including but not limited to, kinetics (e.g., exchange current density, cathodic and anodic transfer coefficients), transport (e.g. conductivity), and thermodynamics (e.g., standard potential). A particularly attractive application of the process is for the quantitative and qualitative processes of alloys plating and for the determination of the relationship between the current efficiency and the applied current density.
摘要:
The surface of an electrically conductive substrate is electrolytically modulated to a predetermined profile by subjecting the surface to electrodeposition or electrodissolution through ionically conductive body portions of an ionic conductance resist which masks the surface. The rate of passage of ionic species to or from any given point along the masked surface is controlled by the trans-resist ionic conductance or resistance at that point. The predetermined surface profile is generated by providing the resist with a trans-resist ionic conductance or resistance profile which patterns the predetermined surface profile.
摘要:
A method for preparing a radioactive, implantable, medical device is provided. The method involves depositing a layer of a radioactive metal that emits beta particles and that has a half-life of between 2 hours and 7 days and a maximum beta energy of between 0.7 and 2.3 MeV onto a metallic surface of the device. In one embodiment, the radioactive metal and a carrier metal are electroplated onto the metallic surface. In another embodiment, a second metallic layer comprising a barrier metal is electroplated onto the radioactive metal layer. A medical device having a metallic surface with a radioactive metallic coating thereon is provided. In one embodiment, the coating comprises a radioactive layer comprising a radioactive metal that emits beta-particles and that has a half-life of between 2 hours and 7 days and an energy level of from about 0.7 MeV to 2.3 MeV and a carrier metal. In another embodiment, the coating further comprises a second layer deposited on the radioactive layer. The second layer comprises a biocompatible metal. A system for applying the radioactive coating to the medical device is also provided The system comprises a package and a sterile electroplating cell contained within the package. The electroplating cell comprises a wall defining a chamber and an electrode attached to the inside wall of the cell or embedded in the inside wall of the cell, so that at least a portion of the electrode is in communication with the chamber. The system further comprises a conductive fastener for electrically connecting the metallic medical device to the power supply and positioning the device within the chamber.