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公开(公告)号：US20130108799A1
公开(公告)日：2013-05-02
申请号：US13662110
申请日：2012-10-26
Inventor： William T. Weaver , Charles T. Carlson , Joseph C. Olson , James Buonodono , Paul Sullivan
CPC classification number: H01J37/20 , H01J37/3023 , H01J37/3171 , H01J2237/024 , H01J2237/31711 , H01L21/266 , H01L21/67213 , H01L31/18 , H01L31/1804 , Y02E10/547 , Y02P70/521
Abstract: One embodiment of this ion implanter includes an ion source and a process chamber. This process chamber is connected to the ion source and separated from the ion source by a plurality of extraction electrodes. A carrier holds multiple workpieces. A mask loader in the process chamber connects a mask to the carrier. A transfer chamber and load lock may be connected to the process chamber. The ion implanter is configured to perform either blanket or selective implantation of the workpieces.
Abstract translation: 该离子注入机的一个实施例包括离子源和处理室。 该处理室与离子源连接并通过多个提取电极与离子源分离。 托架支撑多个工件。 处理室中的掩模加载器将掩模连接到载体。 传送室和加载锁可以连接到处理室。 离子注入机被配置为执行工件的橡皮布或选择性植入。
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公开(公告)号：US09437392B2
公开(公告)日：2016-09-06
申请号：US13662110
申请日：2012-10-26
Inventor： William T. Weaver , Charles T. Carlson , Joseph C. Olson , James Buonodono , Paul Sullivan
IPC: H01J37/00 , H01J37/20 , H01J37/302 , H01J37/317 , H01L21/266 , H01L21/67 , H01L31/18
CPC classification number: H01J37/20 , H01J37/3023 , H01J37/3171 , H01J2237/024 , H01J2237/31711 , H01L21/266 , H01L21/67213 , H01L31/18 , H01L31/1804 , Y02E10/547 , Y02P70/521
Abstract: One embodiment of this ion implanter includes an ion source and a process chamber. This process chamber is connected to the ion source and separated from the ion source by a plurality of extraction electrodes. A carrier holds multiple workpieces. A mask loader in the process chamber connects a mask to the carrier. A transfer chamber and load lock may be connected to the process chamber. The ion implanter is configured to perform either blanket or selective implantation of the workpieces.
Abstract translation: 该离子注入机的一个实施例包括离子源和处理室。 该处理室与离子源连接并通过多个提取电极与离子源分离。 托架支撑多个工件。 处理室中的掩模加载器将掩模连接到载体。 传送室和加载锁可以连接到处理室。 离子注入机被配置为执行工件的橡皮布或选择性植入。
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公开(公告)号：US08937004B2
公开(公告)日：2015-01-20
申请号：US13866315
申请日：2013-04-19
Inventor： Anthony Renau , Ludovic Godet , Timothy J. Miller , Joseph C. Olson , Vikram Singh , James Buonodono , Deepak A. Ramappa , Russell J. Low , Atul Gupta , Kevin M. Daniels
IPC: H01L21/26 , H01L21/42 , B01J19/08 , H01J37/317 , H01J37/32 , H01L31/0224 , H01L31/068 , H01L21/223
CPC classification number: B01J19/081 , H01J37/3171 , H01J37/32357 , H01J37/32422 , H01J37/32623 , H01J2237/0453 , H01J2237/1205 , H01L21/2236 , H01L31/022425 , H01L31/068 , H01L31/08 , H01L31/1804 , Y02E10/547 , Y02P70/521
Abstract: A plasma processing apparatus comprises a plasma source configured to produce a plasma in a plasma chamber, such that the plasma contains ions for implantation into a workpiece. The apparatus also includes a focusing plate arrangement having an aperture arrangement configured to modify a shape of a plasma sheath of the plasma proximate the focusing plate such that ions exiting an aperture of the aperture arrangement define focused ions. The apparatus further includes a processing chamber containing a workpiece spaced from the focusing plate such that a stationary implant region of the focused ions at the workpiece is substantially narrower that the aperture. The apparatus is configured to create a plurality of patterned areas in the workpiece by scanning the workpiece during ion implantation.
Abstract translation: 等离子体处理装置包括等离子体源，其被配置为在等离子体室中产生等离子体，使得等离子体包含用于注入工件的离子。 该装置还包括聚焦板装置，该聚焦板装置具有孔结构，其被配置为修改离开聚焦板附近的等离子体鞘的等离子体鞘的形状，使得离开孔结构的孔的离子限定聚焦离子。 该设备还包括处理室，其包含与聚焦板间隔开的工件，使得在工件处的聚焦离子的固定注入区域基本上比孔更窄。 该装置被配置为通过在离子注入期间扫描工件来在工件中产生多个图案化区域。
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公开(公告)号：US20130234034A1
公开(公告)日：2013-09-12
申请号：US13866315
申请日：2013-04-19
Inventor： Anthony Renau , Ludovic Godet , Timothy J. Miller , Joseph C. Olson , Vikram Singh , James Buonodono , Deepak A. Ramappa , Russell J. Low , Atul Gupta , Kevin M. Daniels
IPC: B01J19/08
CPC classification number: B01J19/081 , H01J37/3171 , H01J37/32357 , H01J37/32422 , H01J37/32623 , H01J2237/0453 , H01J2237/1205 , H01L21/2236 , H01L31/022425 , H01L31/068 , H01L31/08 , H01L31/1804 , Y02E10/547 , Y02P70/521
Abstract: A plasma processing apparatus comprises a plasma source configured to produce a plasma in a plasma chamber, such that the plasma contains ions for implantation into a workpiece. The apparatus also includes a focusing plate arrangement having an aperture arrangement configured to modify a shape of a plasma sheath of the plasma proximate the focusing plate such that ions exiting an aperture of the aperture arrangement define focused ions. The apparatus further includes a processing chamber containing a workpiece spaced from the focusing plate such that a stationary implant region of the focused ions at the workpiece is substantially narrower that the aperture. The apparatus is configured to create a plurality of patterned areas in the workpiece by scanning the workpiece during ion implantation.
Abstract translation: 等离子体处理装置包括等离子体源，其被配置为在等离子体室中产生等离子体，使得等离子体包含用于注入工件的离子。 该装置还包括聚焦板装置，该聚焦板装置具有孔结构，其被配置为修改离开聚焦板附近的等离子体鞘的等离子体鞘的形状，使得离开孔结构的孔的离子限定聚焦离子。 该设备还包括处理室，其包含与聚焦板间隔开的工件，使得在工件处的聚焦离子的固定注入区域基本上比孔更窄。 该装置被配置为通过在离子注入期间扫描工件来在工件中产生多个图案化区域。
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