公开(公告)号：US11688833B2

公开(公告)日：2023-06-27

申请号：US17321744

申请日：2021-05-17

Applicant: VERSITECH LIMITED

Inventor： Hoi Wai Choi ,  Wai Yuen Fu

IPC: H01L27/15 ,  H01L33/50 ,  H01L25/075 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32

CPC classification number: H01L33/502 ,  H01L25/0753 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32

Abstract: A nanostructure fabricated on a semiconductor light-emitting device induces strain in the active region. The active device includes at least one quantum heterostructure, in which the strain changes the extent of Quantum Confined Stark Effect, and thus modifies the wavelength of light emission. By mixing strain relaxation and strain induction effects there is a spectral broadening of the light emission, providing polychromatic light emission.

公开(公告)号：US11094855B2

公开(公告)日：2021-08-17

申请号：US16493058

申请日：2018-03-12

Applicant: VERSITECH LIMITED

Inventor： Hoi Wai Choi ,  Wai Yuen Fu

IPC: H01L27/15 ,  H01L33/50 ,  H01L25/075 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32

Abstract: A nanostructure fabricated on a semiconductor light-emitting device induces strain in the active region. The active device includes at least one quantum heterostructure, in which the strain changes the extent of Quantum Confined Stark Effect, and thus modifies the wavelength of light emission. By mixing strain relaxation and strain induction effects there is a spectral broadening of the light emission, providing polychromatic light emission.