摘要:
An RFID tag is configured to adjust its current clock frequency to conserve tag power while receiving a reader signal and/or backscattering a signal. The tag may determine whether to adjust its current clock frequency based on one or more timing parameters, which may be determined from a reader command and/or from a signal to be backscattered. The counting rate and/or limit of a tag counter and/or the power supplied to a tag component may also be adjusted. The current tag clock frequency may be adjusted during the signal reception/backscattering process and optionally restored once the process is completed.
摘要:
RFID tags are configured to adjust their clock frequency in order to meet predefined limits for reply frequencies to conserve tag power. A deviation of computed tag reply frequency from a reader commanded reply frequency is used to determine an adjustment to the tag clock frequency. The tag clock frequency may be adjusted during backscatter and restored once backscattering is completed.
摘要:
An RFID tag has a fuse that is adapted to store configuration data in a way that survives loss of power. The fuse can be one time programmable or many times programmable, and be implemented with a non-volatile memory. The configuration data becomes available to an operational component of the tag, such as at power up, controlling its performance.
摘要:
Feasibility of a requested action by a reader is predetermined in an RFID tag based on an available tag power level. A pretest that is designed to consume artificially high levels of power is performed and the power level monitored to determine if a preset condition is met. The pretest may include activation of selected components such as a memory and associated support circuitry. If the preset condition is not met, the requested action is aborted and an error message transmitted to the reader.
摘要:
Embodiments of the invention describe a reference current generator circuit having a core circuit that includes a first transistor in a first current path for conduct a first current and a second transistor in a second current path for conduct a second current. The second transistor has a threshold voltage that is different from the threshold voltage of the first transistor by at least 10%. The voltage differential between the first and second transistors generate a voltage across a resistive component coupled in series with the second transistor in the second current path.
摘要:
RFID tags, tag circuits, and methods are provided that reject at least in part the distortion caused to wireless signals by interference in the environment. When the received RF wave is converted into an unfiltered input (971), a filtered output (972) is generated that does not include an artifact feature deriving from the distortion. The filtered output is used instead of the unfiltered input, which results in tag operation as if there were less interference in the environment, or none at all.
摘要:
Technologies suitable for on-wafer testing in the ubiquitous computing era are disclosed. Among the inventive features disclosed are: 1) clustering of wafer test probe landing area sites for parallel test sequencing; 2) on wafer test wiring that runs along the wafer's scribe regions; 3) on-wafer test wiring that can be scribed and yet thwart the spread of contamination into the product die; 4) an RFID tag design that allows for on-wafer testing without imposing substantial semiconductor surface area penalty; 5) an RFID tag design that includes built-in self test (BIST) circuitry for the RFID tag's non-volatile memory.
摘要:
A nonvolatile memory cell is constructed using a floating-gate (FG) pFET Readout Transistor (RT) having its source tied to a power source (Vdd) and its drain providing a current which can be sensed to determine a cell state. The gate of the RT provides for charge/information storage. A control capacitor structure (CCS) having terminals coupled to a first voltage source and the FG and a tunneling capacitor structure (TCS) having terminals coupled to a second voltage source and the FG are utilized in each embodiment. The CCS has much more capacitance than the TCS. Manipulation of the voltages applied to the first voltage source and second voltage source (and Vdd) controls an electric field across the CCS and pFET dielectrics and thus Fowler-Nordheim tunneling of electrons onto and off of the FG, thus controlling the charge on the FG and the information stored thereon.
摘要:
A Radio-Frequency Identification (RFID) transponder is provided. The RFID transponder may include a basic ID flag circuit having a VDD voltage node, an output voltage node, and a capacitor coupled to the VDD voltage node and the output voltage node to store an ID flag. The persistence duration of the state of the ID flag is controlled by maintaining a charge and leakage circuit. The charge and leakage circuit includes an NMOS device having a source, a drain and a gate, the source node of the NMOS device being coupled to the capacitor and the drain node of the NMOS device being coupled to a first CMOS inverter. The first CMOS inverter is powered by a regulated supply voltage such that the voltage on the capacitor is not dependent on the forward voltage drop of the NMOS device.
摘要:
The present disclosure provides a power rectifier for a Radio Frequency Identification tag circuit. The rectifier is constructed from a pair of complementary MOS transistors. Gates of the transistors have predetermined voltages applied to them. The applied voltages bias the transistors to near their active operating region. During the same time additional control signals are applied to the gates of the transistors, the control signals are synchronous, but out of phase, with each other.