公开(公告)号：US20150056790A1

公开(公告)日：2015-02-26

申请号：US14533650

申请日：2014-11-05

Applicant: Veeco Instruments Inc.

Inventor： Alexander I. Gurary ,  Mikhail Belousov ,  Bojan Mitrovic

IPC: H01L21/02

CPC classification number: H01L21/02538 ,  C23C16/301 ,  C23C16/45504 ,  C23C16/4557 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/45587 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/46 ,  H01L21/0262

Abstract: A chemical vapor deposition reactor and method. Reactive gases, such as gases including a Group III metal source and a Group V metal source, are introduced into the chamber (10) of a rotating-disc reactor and directed downwardly onto a wafer carrier (32) and substrates (40) which are maintained at an elevated substrate temperature, typically above about 400° C. and normally about 700-1100° C. to deposit a compound such as a III-V semiconductor. The gases are introduced into the reactor at an inlet temperature desirably above about 75° C. and most preferably about 100°-350° C. The walls of the reactor may be at a temperature close to the inlet temperature. Use of an elevated inlet temperature allows the use of a lower rate of rotation of the wafer carrier, a higher operating pressure, lower flow rate, or some combination of these.

Abstract translation: 化学气相沉积反应器及方法。 将反应性气体，例如包括III族金属源和V族金属源的气体引入旋转盘式反应器的室（10）中并且向下引导到晶片载体（32）和基板（40） 保持在升高的基板温度，通常高于约400℃，通常为约700-1100℃，以沉积诸如III-V族半导体的化合物。 气体在理想的高于约75℃的入口温度下引入反应器中，最优选的是约100℃-350℃。反应器的壁可以处于接近入口温度的温度。 使用升高的入口温度允许使用较低的晶片载体的旋转速率，更高的操作压力，更低的流速或这些的一些组合。

公开(公告)号：US20170253967A1

公开(公告)日：2017-09-07

申请号：US15448019

申请日：2017-03-02

Applicant: Veeco Instruments Inc.

Inventor： Bojan Mitrovic ,  Eric Armour ,  Ian Kunsch

IPC: C23C16/44 ,  H01L21/687 ,  H01L21/02 ,  C23C16/455 ,  C23C16/458

CPC classification number: C23C16/4401 ,  C23C16/45504 ,  C23C16/45519 ,  C23C16/4584 ,  C23C16/4588 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/68764 ,  H01L21/68771

Abstract: An arrangement of two shutters radially outward from an injector block and a susceptor onto which a wafer carrier is removably mounted are configured to provide a flowpath through a reactor chamber that does not exhibit a vortex, thereby reducing or eliminating buildup on the inside of the reactor chamber and facilitating large temperature gradient between the injector block and the wafer carrier. This can be accomplished by introduction of a purge gas flow at a radially inner wall of an upper shutter, and in some embodiments the purge gas can have a different chemical composition than the precursor gas used to grow desired epitaxial structures on the wafer carrier.

公开(公告)号：US20170121847A1

公开(公告)日：2017-05-04

申请号：US15403709

申请日：2017-01-11

Applicant: Veeco Instruments Inc.

Inventor： Eric Armour ,  Sandeep Krishnan ,  Alex Zhang ,  Bojan Mitrovic ,  Alexander Gurary

IPC: C30B25/12 ,  C23C16/46 ,  C23C16/458 ,  C30B25/10

CPC classification number: C30B25/12 ,  C23C16/4584 ,  C23C16/4586 ,  C23C16/46 ,  C30B25/105 ,  Y10T29/49826

Abstract: A wafer carrier assembly for use in a system for growing epitaxial layers on one or more wafers by chemical vapor deposition (CVD), the wafer carrier assembly includes a wafer carrier body formed symmetrically about a central axis, and including a generally planar top surface that is situated perpendicularly to the central axis and a planar bottom surface that is parallel to the top surface. At least one wafer retention pocket is recessed in the wafer carrier body from the top surface. Each of the at least one wafer retention pocket includes a floor surface and a peripheral wall surface that surrounds the floor surface and defines a periphery of that wafer retention pocket. At least one thermal control feature includes an interior cavity or void formed in the wafer carrier body and is defined by interior surfaces of the wafer carrier body.

公开(公告)号：US20150225875A1

公开(公告)日：2015-08-13

申请号：US14618519

申请日：2015-02-10

Applicant: Veeco Instruments Inc.

Inventor： Bojan Mitrovic ,  Alexander I. Gurary ,  William E. Quinn ,  Eric A. Armour

IPC: C30B25/14 ,  C30B25/16 ,  C23C16/458 ,  C30B25/12 ,  C23C16/455 ,  C23C16/52

CPC classification number: C30B25/14 ,  C23C16/455 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/52 ,  C30B25/08 ,  C30B25/12 ,  C30B25/165

Abstract: In a rotating disk reactor for growing epitaxial layers on substrate or other CVD reactor system, gas directed toward the substrates at gas inlets at different radial distances from the axis of rotation of the disk has both substantially the same gas flow rate/velocity and substantially the same gas density at each inlet. The gas directed toward portions of the disk remote from the axis may include a higher concentration of a reactant gas than the gas directed toward portions of the disk close to the axis, so that portions of the substrate surfaces at different distances from the axis receive substantially the same amount of reactant gas per unit area, and a combination of carrier gases with different relative molecular weights at different radial distances from the axis of rotation are employed to substantially make equal the gas density in each region of the reactor. The system may be applied with a combination or carrier gases at multiple gas inlets, a combination of carrier and reactant gases at multiple inlets, and may be used with an arbitrarily large number of gases, when at least two gases of different molecular weights are provided. A linear flow pattern is achieved within the reactor, avoiding laminar recirculation areas, and permitting uniform deposition and growth of epitaxial layers on the substrate.

Abstract translation: 在用于在衬底或其它CVD反应器系统上生长外延层的旋转盘式反应器中，在与盘的旋转轴线不同的径向距离处的气体入口处朝向衬底的气体具有基本上相同的气体流速/速度， 每个入口气体密度相同。 朝向远离轴的盘的部分的气体可以包括比指向盘的靠近轴的部分的气体更高的反应气体浓度，使得与轴的不同距离处的衬底表面的部分基本上接收 采用相同量的每单位面积的反应气体，以及在与旋转轴线不同的径向距离处具有不同相对分子量的载气的组合基本上使反应器各区域中的气体密度相等。 该系统可以在多个气体入口处的组合或载气施加，多个入口处的载体和反应物气体的组合，并且当提供至少两种不同分子量的气体时，可以与任意大量的气体一起使用 。 在反应器内实现线性流动模式，避免层流再循环区域，并允许外延层在衬底上的均匀沉积和生长。

公开(公告)号：USD921431S1

公开(公告)日：2021-06-08

申请号：US29685939

申请日：2019-04-01

Applicant: Veeco Instruments, Inc.

Designer： Sandeep Krishnan ,  Bojan Mitrovic ,  Aniruddha Bagchi ,  Alexander Gurary ,  Chenghung Paul Chang ,  Ian Kunsch ,  Matthew J. Van Doren

公开(公告)号：US20190316258A1

公开(公告)日：2019-10-17

申请号：US16383321

申请日：2019-04-12

Applicant: Veeco Instruments Inc.

Inventor： Bojan Mitrovic ,  Ian Kunsch ,  Juan Gamarra ,  Mandar Deshpande

IPC: C23C16/54 ,  C23C16/455

Abstract: An injector block for supplying one or more reactant gases into a chemical vapor deposition reactor. The injector block including a plurality of first reactant gas distribution channels between one or more first reactant gas inlets and a plurality of first reactant gas distribution outlets to deliver a first reactant gas into the reactor, and a plurality of second reactant gas distribution channels between one or more second reactant gas inlets and a plurality of second reactant gas distribution outlets to deliver a second reactant gas into the reactor, the plurality of second reactant gas distribution outlets partitioned into at least a second reactant gas first zone and a second reactant gas second zone, the second reactant gas second zone at least partially surrounding the second reactant gas first zone.

公开(公告)号：US09982362B2

公开(公告)日：2018-05-29

申请号：US14618519

申请日：2015-02-10

Applicant: Veeco Instruments Inc.

Inventor： Bojan Mitrovic ,  Alexander I. Gurary ,  William E. Quinn ,  Eric A. Armour

IPC: C23C16/455 ,  C30B25/14 ,  C23C16/458 ,  C30B25/16 ,  C30B25/08 ,  C30B25/12 ,  C23C16/52

CPC classification number: C30B25/14 ,  C23C16/455 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/52 ,  C30B25/08 ,  C30B25/12 ,  C30B25/165

Abstract: In a rotating disk reactor for growing epitaxial layers on substrate or other CVD reactor system, gas directed toward the substrates at gas inlets at different radial distances from the axis of rotation of the disk has both substantially the same gas flow rate/velocity and substantially the same gas density at each inlet. The gas directed toward portions of the disk remote from the axis may include a higher concentration of a reactant gas than the gas directed toward portions of the disk close to the axis, so that portions of the substrate surfaces at different distances from the axis receive substantially the same amount of reactant gas per unit area, and a combination of carrier gases with different relative molecular weights at different radial distances from the axis of rotation are employed to substantially make equal the gas density in each region of the reactor. The system may be applied with a combination or carrier gases at multiple gas inlets, a combination of carrier and reactant gases at multiple inlets, and may be used with an arbitrarily large number of gases, when at least two gases of different molecular weights are provided. A linear flow pattern is achieved within the reactor, avoiding laminar recirculation areas, and permitting uniform deposition and growth of epitaxial layers on the substrate.

公开(公告)号：US09938621B2

公开(公告)日：2018-04-10

申请号：US15151845

申请日：2016-05-11

Applicant: Veeco Instruments Inc.

Inventor： Bojan Mitrovic ,  Guanghua Wei ,  Eric A. Armour ,  Ajit Paranjpe

IPC: C23C16/455 ,  C23C16/458 ,  H01L21/687 ,  C30B25/16 ,  C30B29/06 ,  C23C16/46 ,  H01L21/02

CPC classification number: C23C16/4585 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45591 ,  C23C16/4584 ,  C23C16/46 ,  C30B25/165 ,  C30B29/06 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/68735 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68785

Abstract: Methods are provided for treating wafers using a wafer carrier rotated about an axis. The wafer carrier is provided with a ring which surrounds the wafer carrier during operation. Treatment gasses directed onto a top surface of the carrier flow outwardly away from the axis over the carrier and over the ring, and pass downstream outside of the ring. The outwardly flowing gasses form a boundary over the carrier and ring. The ring helps to maintain a boundary layer of substantially uniform thickness over the carrier, which promotes uniform treatment of the wafers.

公开(公告)号：US20160251758A1

公开(公告)日：2016-09-01

申请号：US15151845

申请日：2016-05-11

Applicant: Veeco Instruments Inc.

Inventor： Bojan Mitrovic ,  Guanghua Wei ,  Eric A. Armour ,  Ajit Paranjpe

IPC: C23C16/458 ,  H01L21/687 ,  H01L21/02 ,  C23C16/455 ,  C23C16/46

CPC classification number: C23C16/4585 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45591 ,  C23C16/4584 ,  C23C16/46 ,  C30B25/165 ,  C30B29/06 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/68735 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68785

Abstract: Apparatus for treating wafers using a wafer carrier rotated about an axis is provided with a ring which surrounds the wafer carrier during operation. Treatment gasses directed onto a top surface of the carrier flow outwardly away from the axis over the carrier and over the ring, and pass downstream outside of the ring. The outwardly flowing gasses form a boundary over the carrier and ring. The ring helps to maintain a boundary layer of substantially uniform thickness over the carrier, which promotes uniform treatment of the wafers.

Abstract translation: 使用绕轴旋转的晶片载体处理晶片的装置在操作期间设置有围绕晶片载体的环。 引导到载体的顶表面上的处理气体向外离开载体上方的轴并且越过环，并且在环的下游向下游。 向外流动的气体在载体和环上形成边界。 该环有助于在载体上保持基本均匀厚度的边界层，这促进了晶片的均匀处理。

公开(公告)号：US20140116330A1

公开(公告)日：2014-05-01

申请号：US14150091

申请日：2014-01-08

Applicant: VEECO INSTRUMENTS INC.

Inventor： Mikhail Belousov ,  Bojan Mitrovic ,  Keng Moy

IPC: C30B25/14

CPC classification number: C30B25/14 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/4584

Abstract: A flow inlet element for a chemical vapor deposition reactor is formed from a plurality of elongated tubular elements extending side-by-side with one another in a plane transverse to the upstream to downstream direction of the reactor. The tubular elements have inlets for ejecting gas in the downstream direction. A wafer carrier rotates around an upstream to downstream axis. The gas distribution elements may provide a pattern of gas distribution which is asymmetrical with respect to a medial plane extending through the axis.

Abstract translation: 用于化学气相沉积反应器的流入口元件由在与反应器的上游到下游方向横切的平面中彼此并排延伸的多个细长管状元件形成。 管状元件具有用于沿下游方向喷射气体的入口。 晶片载体围绕上游到下游轴线旋转。 气体分布元件可以提供相对于延伸穿过轴线的中间平面不对称的气体分布图案。