公开(公告)号：US20200270479A1

公开(公告)日：2020-08-27

申请号：US16749625

申请日：2020-01-22

Applicant: Versum Materials US, LLC

Inventor： Joseph D. Rose ,  Xiabo Shi ,  Hongjun Zhou ,  Krishna P. Murella

IPC: C09G1/02 ,  H01L21/321

Abstract: Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) compositions, methods of using the composition and systems for using the composition are provided. The compositions comprise abrasive particles, and two different groups of chemical additives; a non-ionic organic surfactant molecule including polysorbate-type surfactants formed by the ethoxylation of the sorbitan and non-ionic organic molecules with multi hydroxyl functional groups in the same molecule. The compositions provide high silicon oxide removal rate (RR) and suppressed SiN removal rate (RR). A good pattern performance are provided by the compositions which offer desired silicon oxide RR at a reasonable DF and showing the high SiN RR suppression at an even higher DF from the blanket wafer data.

公开(公告)号：US20200239736A1

公开(公告)日：2020-07-30

申请号：US16737417

申请日：2020-01-08

Applicant: Versum Materials US, LLC

Inventor： Xiaobo Shi ,  Krishna P. Murella ,  Joseph D. Rose ,  Hongjun Zhou ,  Mark Leonard O'Neill

IPC: C09G1/02 ,  H01L21/3105 ,  H01L21/762

Abstract: Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) polishing compositions, methods and systems of use therefore are provided. The CMP polishing composition comprises abrasives of ceria coated inorganic metal oxide particles, such as ceria-coated silica; and dual chemical additives for providing the tunable oxide film removal rates and tunable SiN film removal rates. Chemical additives comprise at least one nitrogen-containing aromatic heterocyclic compound and at least one non-ionic organic molecule having more than one hydroxyl functional group organic.

公开(公告)号：US20170283673A1

公开(公告)日：2017-10-05

申请号：US15462463

申请日：2017-03-17

Applicant: Versum Materials US, LLC

Inventor： Hongjun Zhou ,  John Edward Quincy Hughes ,  Krishna P. Murella ,  Reinaldo Mario Machado ,  Mark Leonard O'Neill ,  Dnyanesh Chandrakant Tamboli

IPC: C09K3/14 ,  B24B37/04 ,  H01L21/3105 ,  C09G1/02

Abstract: Composite particles with lower mean particle size and smaller size distribution are obtained through refining treatments. The refined composite particles, such as ceria coated silica particles are used in Chemical Mechanical Planarization (CMP) compositions to offer higher removal rate; very low within wafer (WWNU) for removal rate, low dishing and low defects for polishing oxide films.

公开(公告)号：US11072726B2

公开(公告)日：2021-07-27

申请号：US16450732

申请日：2019-06-24

Applicant: Versum Materials US, LLC

Inventor： Xiaobo Shi ,  Krishna P. Murella ,  Joseph D. Rose ,  Hongjun Zhou ,  Mark Leonard O'Neill

IPC: C09G1/02 ,  H01L21/321

Abstract: Chemical mechanical planarization (CMP) polishing compositions, methods and systems are provided to reduce oxide trench dishing and improve over-polishing window stability. High and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable SiO2: SiN selectivity are also provided. The compositions use a unique combination of abrasives such as ceria coated silica particles and chemical additives such as maltitol, lactitol, maltotritol or combinations as oxide trench dishing reducing additives.

公开(公告)号：US20200032108A1

公开(公告)日：2020-01-30

申请号：US16593268

申请日：2019-10-04

Applicant: Versum Materials US, LLC

Inventor： James Matthew Henry ,  Hongjun Zhou ,  Krishna P. Murella ,  Dnyanesh Chandrakant Tamboli ,  Joseph Rose

IPC: C09G1/02 ,  H01L21/304 ,  C09K3/14 ,  H01L21/321 ,  B24B37/24 ,  H01L21/306 ,  C09G1/00 ,  C09G1/04 ,  B24B1/00 ,  C09K13/06 ,  B24B37/04

Abstract: Chemical Mechanical Planarization (CMP) polishing compositions comprising abrasive particles and additives to boost removal rates of films comprising elemental silicon such as poly-silicon and Silicon-Germanium.

公开(公告)号：US12234383B2

公开(公告)日：2025-02-25

申请号：US17998517

申请日：2021-05-25

Applicant: Versum Materials US, LLC

Inventor： Xiaobo Shi ,  Krishna P. Murella ,  Joseph D. Rose ,  Hongjun Zhou ,  Mark Leonard O'Neill

IPC: C09G1/02 ,  H01L21/321

Abstract: Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) polishing compositions, methods and systems of use therefore are provided. The CMP polishing composition comprises abrasives of ceria coated inorganic oxide particles, such as ceria-coated silica; and dual chemical additives for providing the tunable oxide film removal rates and tunable SiN film removal rates; low oxide trench dishing, and high oxide: SiN selectivity. Dual chemical additives comprise at least one silicone-containing compound comprising at least one of (1) ethylene oxide and propylene oxide (EO-PO) group, and at least one of substituted ethylene diamine group on the same molecule; and (2) at least one non-ionic organic molecule having at least two, preferably at least four hydroxyl functional groups.

公开(公告)号：US11180678B2

公开(公告)日：2021-11-23

申请号：US16664924

申请日：2019-10-27

Applicant: Versum Materials US, LLC

Inventor： Xiaobo Shi ,  Krishna P. Murella ,  Joseph D. Rose ,  Hongjun Zhou ,  Mark Leonard O'Neill

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/3105 ,  B24B37/04 ,  H01L21/762

Abstract: Present invention provides Chemical Mechanical Planarization Polishing (CMP) compositions for Shallow Trench Isolation (STI) applications. The CMP compositions contain ceria coated inorganic oxide particles as abrasives, such as ceria-coated silica particles; chemical additive selected from the group consisting of an organic acetylene molecule containing an acetylene bond and at least two or multi ethoxylate functional groups with terminal hydroxyl groups, an organic molecule with at least two or multi hydroxyl functional groups in the same molecule, and combinations thereof; water soluble solvent; and optionally biocide and pH adjuster; wherein the composition has a pH of 2 to 12, preferably 3 to 10, and more preferably 4 to 9.

公开(公告)号：US20210179890A1

公开(公告)日：2021-06-17

申请号：US16711818

申请日：2019-12-12

Applicant: Versum Materials US, LLC

Inventor： Xiaobo Shi ,  Joseph D. Rose ,  Hongjun Zhou ,  Krishna P. Murella ,  Mark Leonard O'Neill

IPC: C09G1/02 ,  C09K3/14 ,  B24B37/04 ,  H01L21/3105

Abstract: The present invention discloses STI CMP polishing compositions, methods and systems that significantly reduce oxide trench dishing and improve over-polishing window stability in addition to provide high and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable high selectivity of SiO2:SiN through the use of an unique combination of ceria inorganic oxide particles, such as ceria coated silica particles as abrasives, and an oxide trench dishing reducing additive of poly(methacrylic acids), its derivatives, its salts, or combinations thereof.

公开(公告)号：US10894906B2

公开(公告)日：2021-01-19

申请号：US16533067

申请日：2019-08-06

Applicant: Versum Materials US, LLC

Inventor： Hongjun Zhou ,  John Edward Quincy Hughes ,  Krishna P. Murella ,  Reinaldo Mario Machado ,  Mark Leonard O'Neill ,  Dnyanesh Chandrakant Tamboli

IPC: H01L21/463 ,  H01L21/461 ,  H01L21/321 ,  H01L21/3105 ,  H01L21/306 ,  H01L21/304 ,  H01L21/302 ,  C09K3/14 ,  C09G1/02 ,  C09G1/00 ,  B24B37/04

Abstract: Composite particles with lower mean particle size and smaller size distribution are obtained through refining treatments. The refined composite particles, such as ceria coated silica particles are used in Chemical Mechanical Planarization (CMP) compositions to offer higher removal rate; very low within wafer (WWNU) for removal rate, low dishing and low defects for polishing oxide films.

公开(公告)号：US10669449B2

公开(公告)日：2020-06-02

申请号：US16125724

申请日：2018-09-09

Applicant: Versum Materials US, LLC

Inventor： Hongjun Zhou ,  Jo-Ann Theresa Schwartz ,  Malcolm Grief ,  Xiaobo Shi ,  Krishna P. Murella ,  Steven Charles Winchester ,  John Edward Quincy Hughes ,  Mark Leonard O'Neill ,  Andrew J. Dodd ,  Dnyanesh Chandrakant Tamboli ,  Reinaldo Mario Machado

IPC: B24B37/24 ,  C09G1/02 ,  C09K3/14 ,  H01L21/308 ,  H01L21/3105 ,  H01L21/306

Abstract: Chemical Mechanical Planarization (CMP) polishing compositions comprising composite particles, such as ceria coated silica particles, offer low dishing, low defects, and high removal rate for polishing oxide films. Chemical Mechanical Planarization (CMP) polishing compositions have shown excellent performance using soft polishing pad.