公开(公告)号：US20200270479A1

公开(公告)日：2020-08-27

申请号：US16749625

申请日：2020-01-22

Applicant: Versum Materials US, LLC

Inventor： Joseph D. Rose ,  Xiabo Shi ,  Hongjun Zhou ,  Krishna P. Murella

IPC: C09G1/02 ,  H01L21/321

Abstract: Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) compositions, methods of using the composition and systems for using the composition are provided. The compositions comprise abrasive particles, and two different groups of chemical additives; a non-ionic organic surfactant molecule including polysorbate-type surfactants formed by the ethoxylation of the sorbitan and non-ionic organic molecules with multi hydroxyl functional groups in the same molecule. The compositions provide high silicon oxide removal rate (RR) and suppressed SiN removal rate (RR). A good pattern performance are provided by the compositions which offer desired silicon oxide RR at a reasonable DF and showing the high SiN RR suppression at an even higher DF from the blanket wafer data.

公开(公告)号：US20200239736A1

公开(公告)日：2020-07-30

申请号：US16737417

申请日：2020-01-08

Applicant: Versum Materials US, LLC

Inventor： Xiaobo Shi ,  Krishna P. Murella ,  Joseph D. Rose ,  Hongjun Zhou ,  Mark Leonard O'Neill

IPC: C09G1/02 ,  H01L21/3105 ,  H01L21/762

Abstract: Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) polishing compositions, methods and systems of use therefore are provided. The CMP polishing composition comprises abrasives of ceria coated inorganic metal oxide particles, such as ceria-coated silica; and dual chemical additives for providing the tunable oxide film removal rates and tunable SiN film removal rates. Chemical additives comprise at least one nitrogen-containing aromatic heterocyclic compound and at least one non-ionic organic molecule having more than one hydroxyl functional group organic.

公开(公告)号：US20200048551A1

公开(公告)日：2020-02-13

申请号：US16533381

申请日：2019-08-06

Applicant: Versum Materials US, LLC

Inventor： Ming-Shih Tsai ,  Chia-Chien Lee ,  Rung-Je Yang ,  Anu Mallikarjunan ,  Chris Keh-Yeuan Li ,  Hongjun Zhou ,  Joseph D. Rose ,  Xiaobo Shi

IPC: C09K13/04 ,  C09G1/02 ,  C09K13/00 ,  H01L21/3105 ,  H01L21/321

Abstract: Polishing compositions comprising ceria coated silica particles and organic acids having one selected from the group consisting of sulfonic acid group, phosphonic acid group, pyridine compound, and combinations thereof, with pH between 5 and 10 and electrical conductivity between 0.2 and 10 millisiemens per centimeter provide very high silicon oxide removal rates for advanced semiconductor device manufacturing.

公开(公告)号：US20170283673A1

公开(公告)日：2017-10-05

申请号：US15462463

申请日：2017-03-17

Applicant: Versum Materials US, LLC

Inventor： Hongjun Zhou ,  John Edward Quincy Hughes ,  Krishna P. Murella ,  Reinaldo Mario Machado ,  Mark Leonard O'Neill ,  Dnyanesh Chandrakant Tamboli

IPC: C09K3/14 ,  B24B37/04 ,  H01L21/3105 ,  C09G1/02

Abstract: Composite particles with lower mean particle size and smaller size distribution are obtained through refining treatments. The refined composite particles, such as ceria coated silica particles are used in Chemical Mechanical Planarization (CMP) compositions to offer higher removal rate; very low within wafer (WWNU) for removal rate, low dishing and low defects for polishing oxide films.

公开(公告)号：US20240006189A1

公开(公告)日：2024-01-04

申请号：US18255530

申请日：2021-12-07

Applicant: Versum Materials US, LLC

Inventor： Xiaobo Shi ,  Hongjun Zhou ,  Robert Vacassy ,  Keh-Yeuan LI ,  Ming Shih Tsai ,  Rung-Je Yang

IPC: H01L21/321 ,  C09G1/02 ,  H01L21/768 ,  H01L21/306

CPC classification number: H01L21/3212 ,  C09G1/02 ,  H01L21/76898 ,  H01L21/30625

Abstract: Provided are Chemical Mechanical Planarization (CMP) compositions that offer high and tunable Cu removal rates and low Cu static etching rates for polishing the broad bulk or advanced node copper or Through Silica Via (TSV). The CMP compositions also provide high selectivity of Cu film vs. other barrier layers, such as Ta, TaN, Ti, TiN, and SiN; and dielectric films, such as TEOS, low-k, and ultra-low-k films. The CMP polishing compositions comprise abrasive, oxidizer, at least two chelators selected from the group consisting of amino acids, amino acid derivatives, and combinations therefore; the Cu static etching reducing agents include, but not limited to, organic alkyl sulfonic acids with straight or branched alkyl chains, and salts of organic alkyl sulfonic acids.

公开(公告)号：US11718767B2

公开(公告)日：2023-08-08

申请号：US16533381

申请日：2019-08-06

Applicant: Versum Materials US, LLC

Inventor： Ming-Shih Tsai ,  Chia-Chien Lee ,  Rung-Je Yang ,  Anu Mallikarjunan ,  Chris Keh-Yeuan Li ,  Hongjun Zhou ,  Joseph D. Rose ,  Xiaobo Shi

IPC: C09G1/02 ,  C09K13/00 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/306 ,  C09K3/14 ,  B24B37/04 ,  B24B1/00 ,  C09G1/06 ,  C09G1/04 ,  C09G1/00 ,  C09K13/04

CPC classification number: C09G1/02 ,  B24B1/00 ,  B24B37/044 ,  C09G1/00 ,  C09G1/04 ,  C09G1/06 ,  C09K3/1454 ,  C09K3/1463 ,  C09K13/00 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/3212 ,  C09K13/04

Abstract: Polishing compositions comprising ceria coated silica particles and organic acids having one selected from the group consisting of sulfonic acid group, phosphonic acid group, pyridine compound, and combinations thereof, with pH between 5 and 10 and electrical conductivity between 0.2 and 10 millisiemens per centimeter provide very high silicon oxide removal rates for advanced semiconductor device manufacturing.

公开(公告)号：US11072726B2

公开(公告)日：2021-07-27

申请号：US16450732

申请日：2019-06-24

Applicant: Versum Materials US, LLC

Inventor： Xiaobo Shi ,  Krishna P. Murella ,  Joseph D. Rose ,  Hongjun Zhou ,  Mark Leonard O'Neill

IPC: C09G1/02 ,  H01L21/321

Abstract: Chemical mechanical planarization (CMP) polishing compositions, methods and systems are provided to reduce oxide trench dishing and improve over-polishing window stability. High and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable SiO2: SiN selectivity are also provided. The compositions use a unique combination of abrasives such as ceria coated silica particles and chemical additives such as maltitol, lactitol, maltotritol or combinations as oxide trench dishing reducing additives.

公开(公告)号：US11066575B2

公开(公告)日：2021-07-20

申请号：US16560713

申请日：2019-09-04

Applicant: Versum Materials US, LLC

Inventor： Xiaobo Shi ,  Hongjun Zhou ,  James Allen Schlueter ,  Jo-Ann T. Schwartz

IPC: C09G1/02 ,  C09K13/00 ,  H01L21/105 ,  H01L21/321 ,  H01L21/768 ,  H01L21/3105

Abstract: Chemical mechanical polishing (CMP) compositions, systems and methods of using the compositions for polishing tungsten or tungsten-containing substrates. The compositions comprise nano-sized abrasive; metal compound coated organic polymer particles as solid state catalyst; oxidizer; tungsten corrosion inhibitor; and a water based liquid carrier.

公开(公告)号：US20200032108A1

公开(公告)日：2020-01-30

申请号：US16593268

申请日：2019-10-04

Applicant: Versum Materials US, LLC

Inventor： James Matthew Henry ,  Hongjun Zhou ,  Krishna P. Murella ,  Dnyanesh Chandrakant Tamboli ,  Joseph Rose

IPC: C09G1/02 ,  H01L21/304 ,  C09K3/14 ,  H01L21/321 ,  B24B37/24 ,  H01L21/306 ,  C09G1/00 ,  C09G1/04 ,  B24B1/00 ,  C09K13/06 ,  B24B37/04

Abstract: Chemical Mechanical Planarization (CMP) polishing compositions comprising abrasive particles and additives to boost removal rates of films comprising elemental silicon such as poly-silicon and Silicon-Germanium.

公开(公告)号：US12234383B2

公开(公告)日：2025-02-25

申请号：US17998517

申请日：2021-05-25

Applicant: Versum Materials US, LLC

Inventor： Xiaobo Shi ,  Krishna P. Murella ,  Joseph D. Rose ,  Hongjun Zhou ,  Mark Leonard O'Neill

IPC: C09G1/02 ,  H01L21/321

Abstract: Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) polishing compositions, methods and systems of use therefore are provided. The CMP polishing composition comprises abrasives of ceria coated inorganic oxide particles, such as ceria-coated silica; and dual chemical additives for providing the tunable oxide film removal rates and tunable SiN film removal rates; low oxide trench dishing, and high oxide: SiN selectivity. Dual chemical additives comprise at least one silicone-containing compound comprising at least one of (1) ethylene oxide and propylene oxide (EO-PO) group, and at least one of substituted ethylene diamine group on the same molecule; and (2) at least one non-ionic organic molecule having at least two, preferably at least four hydroxyl functional groups.